IC A. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers 20± ±0.5 14±0.2 30± φ 7 MOUNTING HOLES

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1 4th-ersion MITSUBISHI HIGBT MODULES CM1DC-4N CM1DC-4N IC... 1 CES... 1 Insulated Type -element in a Pack ISiC Baseplate Trench Gate IGBT : CSTBT Soft Reverse Recovery Diode PPLICTION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRWING & CIRCUIT DIGRM Dimensions in mm 1±. ±. ±. 4 - M8 NUTS 4(E1) (C) ±.1 E1 C 4 1 ±. 14±. 14±. G1 C1 (C1) 1(E) G E E1 G1 C1 C G E CIRCUIT DIGRM 6 - M4 NUTS 16±. 18±. 4±. 44±. ±. ±. 6 - φ MOUNTING HOLES screwing depth min ±..±. screwing depth min ±. 14±. ±. ±. ± LBEL 9.±. Jul.

2 MITSUBISHI HIGBT MODULES 4th-ersion CM1DC-4N MXIMUM RTINGS Symbol Item Conditions Ratings CES GES IC ICM IE (Note ) IEM (Note ) PC (Note ) Tj Top Tstg iso tpsc Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width GE =, Tj = C CE =, Tj = C TC = C Pulse (Note 1) Pulse (Note 1) TC = C, IGBT part RMS, sinusoidal, f = 6Hz, t = 1min. CC = 1, CES 1, GE = 1 Tj = 1 C 1 ± ~ +1 4 ~ +1 4 ~ W C C C ELECTRICL CHRCTERISTICS ICES IGES Cies Coes Cres Qg EC (Note ) td(on) tr Eon td(off) tf Symbol Item Conditions GE(th) CE(sat) Eoff trr (Note ) Irr (Note ) Qrr (Note ) Erec (Note ) Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Emitter-collector voltage Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy CE = CES, GE =, Tj = C IC = 1m, CE = 1, Tj = C GE = GES, CE =, Tj = C IC = 1, GE = 1, Tj = C (Note 4) IC = 1, GE = 1, Tj = 1 C (Note 4) CE = 1, f = 1kHz GE =, Tj = C CC = 8, IC = 1, GE = 1, Tj = C IE = 1, GE =, Tj = C (Note 4) IE = 1, GE =, Tj = 1 C (Note 4) CC = 8, IC = 1, GE = ±1 RG(on) = 1.Ω, Tj = 1 C, Ls = 1nH Inductive load CC = 8, IC = 1, GE = ±1 RG(off) =.Ω, Tj = 1 C, Ls = 1nH Inductive load CC = 8, IC = 1, GE = ±1 RG(on) = 1.Ω, Tj = 1 C, Ls = 1nH Inductive load Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (1 C).. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).. Junction temperature (Tj) should not exceed Tjmax rating (1 C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Min Typ Max 4 6. Limits m µ nf nf nf µc mj/pulse mj/pulse µc mj/pulse Jul.

3 MITSUBISHI HIGBT MODULES 4th-ersion CM1DC-4N THERML CHRCTERISTICS Symbol Item Conditions Rth(j-c)Q Rth(j-c)R Rth(c-f) Thermal resistance Contact thermal resistance Junction to Case, IGBT part, 1/ module Junction to Case, FWDi part, 1/ module Case to Fin, λgrease = 1W/m K, 1/ module Limits Min Typ Max K/kW K/kW K/kW MECHNICL CHRCTERISTICS M Symbol Item Conditions CTI da ds LC-E(int) RC-E(int) Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance M8 : Main terminals screw M6 : Mounting screw M4 : uxiliary terminals screw IGBT part TC = C Limits Min Typ Max N m kg mm mm nh mω Jul.

4 MITSUBISHI HIGBT MODULES 4th-ersion CM1DC-4N PERFORMNCE CURES 4 Tj = 1 C OUTPUT CHRCTERISTICS GE = 1 4 TRNSFER CHRCTERISTICS CE = GE = GE = 1 GE = GE = Tj = C Tj = 1 C COLLECTOR-EMITTER OLTGE () GTE-EMITTER OLTGE () COLLECTOR-EMITTER STURTION OLTGE () 4 1 COLLECTOR-EMITTER STURTION OLTGE CHRCTERISTICS GE = 1 Tj = C Tj = 1 C EMITTER-COLLECTOR OLTGE () 4 1 FREE-WHEEL DIODE FORWRD CHRCTERISTICS Tj = C Tj = 1 C EMITTER CURRENT () Jul.

5 MITSUBISHI HIGBT MODULES 4th-ersion CM1DC-4N 1 CPCITNCE CHRCTERISTICS GTE CHRGE CHRCTERISTICS CC = 8, IC = 1 Tj = C CPCITNCE (nf) Cies Coes GE =, Tj = C Cres f = 1kHz GTE-EMITTER OLTGE () COLLECTOR-EMITTER OLTGE () GTE CHRGE (µc) SWITCHING ENERGIES (mj/pulse) HLF-BRIDGE SWITCHING ENERGY CHRCTERISTICS CC = 8, GE = ±1 RG(on) = 1.Ω, RG(off) =.Ω Tj = 1 C, Inductive load Eon Eoff Erec SWITCHING ENERGIES (mj/pulse) HLF-BRIDGE SWITCHING ENERGY CHRCTERISTICS CC = 8, IC = 1 GE = ±1 Tj = 1 C, Inductive load Eon Eoff Erec GTE RESISTNCE (Ω) Jul.

6 MITSUBISHI HIGBT MODULES 4th-ersion CM1DC-4N SWITCHING TIMES () HLF-BRIDGE SWITCHING TIME CHRCTERISTICS CC = 8, GE = ±1 RG(on) = 1.Ω, RG(off) =.Ω Tj = 1 C, Inductive load td(off) td(on) tr tf REERSE RECOERY CHRGE (µc) 4 1 FREE-WHEEL DIODE REERSE RECOERY CHRCTERISTICS CC = 8, GE = ±1 RG(on) = 1.Ω Tj = 1 C, Inductive load Qrr EMITTER CURRENT () NORMLIZED TRNSIENT THERML IMPEDNCE TRNSIENT THERML IMPEDNCE CHRCTERISTICS Single Pulse, TC = C Rth(j c)q = 19K/kW Rth(j c)r = 4K/kW REERSE BIS SFE OPERTING RE (RBSO) CC 1, GE = +/-1 Tj = 1 C, RG(off).Ω Module Chip 1 1 TIME (s) COLLECTOR-EMITTER OLTGE () Jul.

CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM8DZB-N CM8DZB-N IC...8 CES... 1 Insulated Type -element in a Pack ISiC Baseplate Trench Gate IGBT : CSTBT TM Soft Reverse Recovery Diode PPLICTION Traction drives, High Reliability Converters / Inverters,