CM400DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM400DY-24A. IC...400A VCES V Insulated Type 2-elements in a pack

Size: px
Start display at page:

Download "CM400DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM400DY-24A. IC...400A VCES V Insulated Type 2-elements in a pack"

Transcription

1 CM00DY-A CM00DY-A IC...00A CES... 0 Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9±0. G 80 6±0. CE E C G E E (0.) -M6 NUTS. -φ6. MOUNTING HOLES SCREWING DEPTH TAB #. t=0. E G LABEL 8.. CE E C G E CIRCUIT DIAGRAM Feb. 009

2 CM00DY-A ABSOLUTE MAXIMUM RATINGS (Tj = C, unless otherwise specified) Symbol CES GES IC ICM IE (Note ) IEM (Note ) PC (Note ) Tj Tstg iso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions G-E Short C-E Short DC, TC = 8 C * Pulse (Note ) Pulse (Note ) TC = C * Terminals to base plate, f = 60Hz, AC minute Main terminals M6 screw Mounting M6 screw Typical value Ratings 0 ± ~ + 0 ~ ~.. ~. 80 Unit A A W C C rms N m g ELECTRICAL CHARACTERISTICS (Tj = C, unless otherwise specified) * * Symbol Parameter Test conditions ICES Collector cutoff current Gate-emitter threshold CE = CES, GE = 0 GE(th) voltage IC = 0mA, CE = IGES Gate leakage current ±GE = GES, CE = 0 Collector-emitter saturation CE(sat) voltage IC = 00A, GE = Cies Input capacitance CE = Coes Output capacitance GE = 0 Cres Reverse transfer capacitance QG Total gate charge, IC = 00A, GE = td(on) Turn-on delay time tr Turn-on rise time, IC = 00A td(off) Turn-off delay time GE = ± tf Turn-off fall time RG = 0.8Ω, trr (Note ) Reverse recovery time IE = 00A Qrr (Note ) Reverse recovery charge EC(Note ) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R Thermal resistance Rth(c-f) Contact thermal resistance RG External gate resistance : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m K)]. Tj = C Tj = C IE = 00A, GE = 0 IGBT part (/ module) * FWDi part (/ module) * Case to heat sink, Thermal compound Applied (/ module) * Note. IE, EC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.. Junction temperature (Tj) should not increase beyond C. Min. 0.8 Limits Typ Max Unit ma 6 8 µa nf nc ns ns µc K/W Ω Feb. 009

3 CM00DY-A PERFORMANCE CURES OUTPUT CHARACTERISTICS GE = 0 Tj = C COLLECTOR-EMITTER OLTAGE CE () COLLECTOR EMITTER SATURATION OLTAGE CE (sat) () COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS GE = Tj = C Tj = C COLLECTOR-EMITTER SATURATION OLTAGE CE (sat) () 8 6 COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS Tj = C IC = A IC = 00A IC = 60A FREE-WHEEL DIODE FORWARD CHARACTERISTICS Tj = C Tj = C 0 GATE-EMITTER OLTAGE GE () EMITTER-COLLECTOR OLTAGE EC () CAPACITANCE Cies, Coes, Cres (nf) CAPACITANCE CE CHARACTERISTICS Cies Coes Cres GE = 0 SWITCHING TIME (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS td(off) tf td(on) tr GE = ± RG = 0.8Ω Tj = C COLLECTOR-EMITTER OLTAGE CE () Feb. 009

4 CM00DY-A REERSE RECOERY TIME trr (ns) REERSE RECOERY CURRENT lrr (A) REERSE RECOERY CHARACTERISTICS OF FREE-WHEEL DIODE Irr trr GE = ± RG = 0.8Ω Tj = C NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j c ) (ratio) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) Single Pulse TC = C Under the chip IGBT part: Per unit base = Rth(j c) = 0.06K/W FWDi part: Per unit base = Rth(j c) = 0.08K/W TIME (s) SWITCHING LOSS (mj/pulse) SWITCHING LOSS vs. COLLECTOR CURRENT Esw(off) Esw(on) GE = ± RG = 0.8Ω Tj = C SWITCHING LOSS (mj/pulse) SWITCHING LOSS vs. GATE RESISTANCE GE = ± IC = 00A Tj = C Esw(on) Esw(off) GATE RESISTANCE RG (Ω) RECOERY LOSS (mj/pulse) RECOERY LOSS vs. IE Err GE = ± RG = 0.8Ω Tj = C RECOERY LOSS (mj/pulse) RECOERY LOSS vs. GATE RESISTANCE Err GE = ± IE = 00A Tj = C GATE RESISTANCE RG (Ω) Feb. 009

5 CM00DY-A GATE-EMITTER OLTAGE GE () GATE CHARGE CHARACTERISTICS 0 IC = 00A 6 8 CC = GATE CHARGE QG (nc) Feb. 009

CM300DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM300DY-24A. IC...300A VCES V Insulated Type 2-elements in a pack

CM300DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM300DY-24A. IC...300A VCES V Insulated Type 2-elements in a pack CM00DY-A CM00DY-A IC...00A CES... 0 Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 8 9±0. -M6 NUTS G +1.0 0 0.

More information

CM1400DU-24NF. APPLICATION UPS & General purpose inverters, etc CM1400DU-24NF. IC A VCES V Insulated Type 2-elements in a pack

CM1400DU-24NF. APPLICATION UPS & General purpose inverters, etc CM1400DU-24NF. IC A VCES V Insulated Type 2-elements in a pack IC... 1 CES... 1 Insulated Type -elements in a pack PPLICTION UPS & General purpose inverters, etc OUTLINE DRWING & CIRCUIT DIGRM Dimensions in mm,b HOUSING Type (J. S. T. Mfg. Co. Ltd) : HR-N B : HR-N

More information

IC A. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers 20± ±0.5 14±0.2 30± φ 7 MOUNTING HOLES

IC A. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers 20± ±0.5 14±0.2 30± φ 7 MOUNTING HOLES 4th-ersion MITSUBISHI HIGBT MODULES CM1DC-4N CM1DC-4N IC... 1 CES... 1 Insulated Type -element in a Pack ISiC Baseplate Trench Gate IGBT : CSTBT Soft Reverse Recovery Diode PPLICTION Traction drives, High

More information

CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM8DZB-N CM8DZB-N IC...8 CES... 1 Insulated Type -element in a Pack ISiC Baseplate Trench Gate IGBT : CSTBT TM Soft Reverse Recovery Diode PPLICTION Traction drives, High Reliability Converters / Inverters,

More information

Not Recommend. for New Design CM35MX-24A. APPLICATION General purpose Inverters, Servo Amplifiers CM35MX-24A

Not Recommend. for New Design CM35MX-24A. APPLICATION General purpose Inverters, Servo Amplifiers CM35MX-24A CMMX- CMMX- PPLTION General purpose Inverters, Servo mplifiers OUTLINE DRWING & CIRCUIT DIGRM 11. 118.1 11 ±. 99 9. 8.. 11.66 1.8.1 6.9. 8..6 1 9 8 6 1 9 8 6 1.. 6 8 9 6 61.8 (.) 1.9 16.9 R(1~) S(~6) T(9~1)

More information

CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE

CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE CMHC-R CMHC-R IC... CES... -element in a Pack Insulated Type LPT-IGBT / Soft Recovery Diode ISiC Baseplate PPLICTION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRWING

More information

LABEL ± TH1(11) NTC TH2(10)

LABEL ± TH1(11) NTC TH2(10) CMRX- CMRX-... CES... pack (-phase Inverter + Brake) Flatbase ype / Insulated ackage / Copper (non-plating) base plate RoHS Directive compliant LIO General purpose Inverters, Servo mplifiers OUL DRWIG

More information

CM600HX-12A. APPLICATION General purpose Inverters, Servo Amplifiers, Power supply, etc. CM600HX-12A. IC...600A VCES...600V Single

CM600HX-12A. APPLICATION General purpose Inverters, Servo Amplifiers, Power supply, etc. CM600HX-12A. IC...600A VCES...600V Single MHX-1A MHX-1A I...A S... Single Flatbase Type / Insulated Package / opper (non-plating) base plate RoHS Directive compliant APPLIATION General purpose Inverters, Servo Amplifiers, Power supply, etc. OUTLIN

More information

PM75B4LA060. APPLICATION Photo voltaic power conditioner PM75B4LA060 MITSUBISHI <INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE FEATURE

PM75B4LA060. APPLICATION Photo voltaic power conditioner PM75B4LA060 MITSUBISHI <INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE FEATURE PMB4LA060 PMB4LA060 FEATURE a) Adopting new th generation IGBT (CSTBT TM ) chip, which performance is improved by 1µm fine rule process. r example, typical ce(sat)=1. @Tj=1 C b) Over-temperature protection

More information

PM150CLA120 PM150CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM150CLA120

PM150CLA120 PM150CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM150CLA120 MITSUBISHI PM10CLA10 PM10CLA10 TYPE PM10CLA10 FEATURE a) Adopting new th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. r example,

More information

DETAIL "A" #110 TAB (8 PLACES) X (4 PLACES) Y (3 PLACES) TH1 TH2 F O 1 F O 2 DETAIL "A"

DETAIL A #110 TAB (8 PLACES) X (4 PLACES) Y (3 PLACES) TH1 TH2 F O 1 F O 2 DETAIL A MG6Q2YS6A Powerex, Inc., 2 E. Hillis Street, Youngwood, Pennsylvania 15697-1 (72) 925-7272 Compact IGBT Series Module 6 Amperes/ olts A D H J K DETAIL "A" C2E1 E2 C1 B E F W M F Outline Drawing and Circuit

More information

CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules M6HG-1H rd-ersion M6HG-1H I...6 A S... 6 High Insulated Type 1-element in a Pack AISi Baseplate APPLIATION Traction drives, High Reliability onverters / Inverters, D choppers OUTLIN DRAWING & IRUIT DIAGRAM

More information

T C MEASURED POINT G1 E1 E2 G2 W - (4 PLACES) G2 E2 E1 G1

T C MEASURED POINT G1 E1 E2 G2 W - (4 PLACES) G2 E2 E1 G1 CMDU-3KA Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1 (7) 95-77 Dual IGBTMOD KA-Series Module Amperes/17 Volts B F A G T C MEASURED POINT M C L T - ( TYP.) N R Z CE1 E C1 C E AA S - (3

More information

CM1000DUC-34SA. Mega Power Dual IGBT 1000 Amperes/1700 Volts

CM1000DUC-34SA. Mega Power Dual IGBT 1000 Amperes/1700 Volts CM1DUC-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 Amperes/17 Volts A P D (8 PLACES) G U H H N S L K C2 C2E1 C1 W X J F BB G2 E2 E1 G1 Y C B Z E CC

More information

PM300CLA120 PM300CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM300CLA120

PM300CLA120 PM300CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM300CLA120 MITSUBISHI PM00CLA10 PM00CLA10 TYPE PM00CLA10 FEATURE a) Adopting new th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. r example,

More information

CM200EXS-24S. Chopper IGBT NX-Series Module 200 Amperes/1200 Volts

CM200EXS-24S. Chopper IGBT NX-Series Module 200 Amperes/1200 Volts CM2EXS-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Chopper IGBT NX-Series Module 2 Amperes/12 Volts A D K F G J E H J S T U 6 5 4 3 M 7 2 L N AL (4 PLACES)

More information

CM75MX-12A. APPLICATION General purpose Inverters, Servo Amplifiers CM75MX-12A

CM75MX-12A. APPLICATION General purpose Inverters, Servo Amplifiers CM75MX-12A CMMX- CMMX-... CS...6 CIB (-phase Converter + -phase Inverter + Brake) Flatbase Type / Insulated Package / Copper base plate RoHS Directive compliant PPLTION General purpose Inverters, Servo mplifiers

More information

C N V (4TYP) U (5TYP) Dimensions Inches Millimeters L 0.69± ±0.25 M N P Q

C N V (4TYP) U (5TYP) Dimensions Inches Millimeters L 0.69± ±0.25 M N P Q QID3322 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 2 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E 1 2 3 6 M H 4 V

More information

PM25CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM25CLA120 MITSUBISHI <INTELLIGENT POWER MODULES>

PM25CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM25CLA120 MITSUBISHI <INTELLIGENT POWER MODULES> PMCLA PMCLA FEATURE a) Adopting new th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. r example, typical ce(sat)=1.9 @Tj=1 C b) I adopt the over-temperature conservation

More information

L K K K K P P1 N GU EU GV EV GW EW GU GVGW GB E LABEL H H

L K K K K P P1 N GU EU GV EV GW EW GU GVGW GB E LABEL H H Three Phase Converter + Three Phase Inverter + Brake A ( PLACES) G J L L L P P1 N GU EU GV EV GW EW GU GVGW GB E Q C R D LABEL D U B R S T S V 3 MAIN TERMINAL X P P1 Outline Drawing and Circuit Diagram

More information

MITSUBISHI ELECTRIC CORPORATION Prepared by S.Iura A S.Iura B S.Iura

MITSUBISHI ELECTRIC CORPORATION Prepared by S.Iura A S.Iura B S.Iura SECURITY CODE Spec. NME Customer s Std. Spec. MITSUBISHI ELECTRIC CORP. PRELIMINRY MITSUBISHI ELECTRIC CORPORTION Prepared by S.Iura S.Iura B S.Iura Checked by H.Yamaguchi R I.Umezaki I.Umezaki E pproved

More information

C N V (4TYP) U (5TYP)

C N V (4TYP) U (5TYP) QID3316 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 1 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E M 1

More information

PM50CLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM50CLB060 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM50CLB060 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES> PM0CLB060 PM0CLB060 FEATURE a) Adopting new th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)=. @Tj= C b) I adopt the over-temperature conservation

More information

PM50B6LA060 FLAT-BASE TYPE INSULATED PACKAGE

PM50B6LA060 FLAT-BASE TYPE INSULATED PACKAGE PM0B6L060 PM0B6L060 FETURE a) dopting new th generation IGBT (CSTBT TM ) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)=. @Tj= C b) Over-temperature protection

More information

IC A. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers 171± M8 NUTS ±0.2 ± ±0.

IC A. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers 171± M8 NUTS ±0.2 ± ±0. rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HIGBT MODULS M18H-4H HIGH POWR SWITHING US M18H-4H I... 18 S... 1 Insulated Type 1-element in a Pack ISi Baseplate Soft

More information

< HVIGBT MODULES > CM1500HC-66R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1500HC-66R

< HVIGBT MODULES > CM1500HC-66R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1500HC-66R CMHC-R CMHC-R I C A V CES V -element in a Pack Insulated Type LPT-IGBT / Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING

More information

CM75MX-12A. NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts

CM75MX-12A. NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 97 (7) 9-72 www.pwrx.com J L M A E F G M L AA AB C Z AG AH AJ A DETAIL "A" X AD H T U 53 V V P(52-53) R S T (-2) (5-6) (9-) ConvDi 52 5 5 49 48

More information

PM200CS1D060 FLAT-BASE TYPE INSULATED PACKAGE

PM200CS1D060 FLAT-BASE TYPE INSULATED PACKAGE PMCS1D PMCS1D FEATURE verter + Drive & Protection IC phase A/ CSTBT TM (The Current senser and the thermal senser with a build-in CSTBT TM.) Monolithic gate drive & protection logic Detection, protection

More information

Technical. Application. Assembly. Availability. Pricing. Phone

Technical. Application. Assembly. Availability. Pricing. Phone 62 Baker Road, Suite 8 Minnetonka, MN 55345 www.chtechnology.com Phone (952) 933-69 Fax (952) 933-6223 -8-274-4284 ank you for downloading this document from C&H Technology, Inc. Please contact the C&H

More information

Technical. Application. Assembly. Availability. Pricing. Phone

Technical. Application. Assembly. Availability. Pricing. Phone 6 Baker Road, Suite Minnetonka, MN 5535 www.chtechnology.com Phone (95) 933-69 Fax (95) 933-63 --7- Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology team

More information

AK AJ AT AR DETAIL "A" N M L K B AB (6 PLACES) DETAIL "B" TH1 (11) TH2 (10) NTC *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5

AK AJ AT AR DETAIL A N M L K B AB (6 PLACES) DETAIL B TH1 (11) TH2 (10) NTC *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5 Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) 925-7272 www.pwrx.com Six IGBTMOD + Brake NX-S Series Module AH AN AC AD AE H AK AJ A D E F G AK AJ AP AT AR AQ AS C AX BB BC BD DETAIL

More information

Excellent Integrated System Limited

Excellent Integrated System Limited Datasheet of CM2TU-12H - IGBT MOD 6PAC 6V 2A U SER Excellent Integrated System Limited Stocking Distributor Click to view price, real time Inventory, Delivery & Lifecycle Information: Powerex Inc. CM2TU-12H

More information

5SNG 0150Q Pak phase leg IGBT Module

5SNG 0150Q Pak phase leg IGBT Module Data Sheet, Doc. No. 5SYA 1447-216-9 5SNG 15Q173 62Pak phase leg IGBT Module VCE = 17 V IC = 15 A Ultra low-loss, rugged SPT++ chip-set Smooth switching SPT++ chip-set for good EMC Cu base-plate for low

More information

5SNA 1500E HiPak IGBT Module

5SNA 1500E HiPak IGBT Module Data Sheet, Doc. No. 5SYA 47-7 2-24 5SNA 5E3335 HiPak IGBT Module VCE = 33 V IC = 5 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling

More information

5SNA 2400E HiPak IGBT Module

5SNA 2400E HiPak IGBT Module Data Sheet, Doc. No. 5SYA 1417-4 2-214 5SNA 24E1735 HiPak IGBT Module VCE = 17 V IC = 24 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power

More information

5SNE 1000E HiPak Chopper IGBT Module

5SNE 1000E HiPak Chopper IGBT Module Data Sheet, Doc. No. 5SYA 457-8-27 5SNE E333 HiPak Chopper IGBT Module VCE = 33 V IC = A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power

More information

5SNG 0200Q Pak phase leg IGBT Module

5SNG 0200Q Pak phase leg IGBT Module Data Sheet, Doc. No. 5SYA 1448-216-9 5SNG Q17 62Pak phase leg IGBT Module VCE = 17 V IC = A Ultra low-loss, rugged SPT++ chip-set Smooth switching SPT++ chip-set for good EMC Cu base-plate for low thermal

More information

5SNA 1000G HiPak IGBT module

5SNA 1000G HiPak IGBT module Datasheet 5SYA 1465-02, Nov. 2018 5SNA 1000G650300 HiPak IGBT module VCE = 6500 V IC = 1000 A Ultra-low-loss, rugged SPT ++ chip-set Exceptional ruggedness and highest current rating High insulation package

More information

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous 2MBI225VN-2-5 IGBT MODULE (V series) 2V / 225A / 2 in one package Inverter Inverter Thermistor Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor

More information

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous IGBT MODULE (V series) V / 45A / 2 in one package Inverter Inverter Thermistor Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC

More information

Technical. Application. Assembly. Availability. Pricing. Phone

Technical. Application. Assembly. Availability. Pricing. Phone 611 Baker Road, Suite 1 Minnetonka, MN 5535 www.chtechnology.com Phone (95) 933-619 Fax (95) 933-63 1--7- Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology

More information

APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1000HG-130XA

APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1000HG-130XA CMHG-3XA CMHG-3XA I C A V CES 65 V -element in pack High Insulated type CSTBT TM (III) / RFC Diode AlSiC baseplate APPLICATION Traction drives,

More information

< HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module

< HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module < HVIGBT MODULE > I C 2A V CES 7V 2-element in a Pack Insulated Type CSTBT SiC Schottky-Barrier Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE

More information

< HVIGBT MODULES > CM750HG-130R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM750HG-130R

< HVIGBT MODULES > CM750HG-130R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM750HG-130R I C 75A V CES V -element in a pack High Insulated type LPT-IGBT / Soft Recovery Diode AlSiC baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING &

More information

ABB HiPak. IGBT Module 5SNA 1600N VCE = 1700 V IC = 1600 A

ABB HiPak. IGBT Module 5SNA 1600N VCE = 1700 V IC = 1600 A VCE = 17 V IC = 16 A ABB HiPak IGBT Module 5SNA 16N171 Doc. No. 5SYA1564-2 Apr 14 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC

More information

ABB HiPak. IGBT Module 5SNE 0800G VCE = 4500 V IC = 800 A

ABB HiPak. IGBT Module 5SNE 0800G VCE = 4500 V IC = 800 A VCE = 45 V IC = 8 A ABB HiPak IGBT Module 5SNE 8G453 Ultra low-loss, rugged SPT + chip-set Smooth switching SPT + chip-set for good EMC Industry standard package High power deity AlSiC base-plate for high

More information

ABB HiPak. IGBT Module 5SNA 0800N VCE = 3300 V IC = 800 A

ABB HiPak. IGBT Module 5SNA 0800N VCE = 3300 V IC = 800 A VCE = 33 V IC = 8 A ABB HiPak IGBT Module 5SNA 8N331 Doc. No. 5SYA 1591-2 4-214 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC

More information

PM150RLA060. APPLICATION General purpose inverter, servo drives and other motor controls PM150RLA060 MITSUBISHI <INTELLIGENT POWER MODULES>

PM150RLA060. APPLICATION General purpose inverter, servo drives and other motor controls PM150RLA060 MITSUBISHI <INTELLIGENT POWER MODULES> FETURE a) dopting new th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)= @Tj= C b) I adopt the over-temperature conservation by Tj detection

More information

KDG25R12KE3. Symbol Description Value Units V CES Collector-Emitter Blocking Voltage 1200 V V GES Gate-Emitter Voltage ±20 V

KDG25R12KE3. Symbol Description Value Units V CES Collector-Emitter Blocking Voltage 1200 V V GES Gate-Emitter Voltage ±20 V KDGR12KE3 IGBT Module KDGR12KE3 Features: IGBT Inverter Short Circuit Rated μs IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications:

More information

FM600TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE

FM600TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE ID(rms)... DSS... Insulated Type -elements in a pack Thermistor inside UL Recognized Yellow Card No.E8 File No.E8 PPLICTION C motor control of forklift (battery power source), UPS OUTLINE DRING & CIRCUIT

More information

ABB HiPak. IGBT Module 5SNE 0800M VCE = 1700 V IC = 800 A

ABB HiPak. IGBT Module 5SNE 0800M VCE = 1700 V IC = 800 A VCE = 17 V IC = 8 A ABB HiPak IGBT Module 5SNE 8M171 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC base-plate for high power

More information

PM100RLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM100RLA120 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM100RLA120 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES> PM00RL0 PM00RL0 FETURE a) dopting new th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)=.9 @Tj= C b) I adopt the over-temperature conservation

More information

FM600TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE

FM600TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FMTU- INSULTED PCKGE FMTU- ID(rms)... DSS... Insulated Type -elements in a pack Thermistor inside UL Recognized Yellow Card No.E8 File No.E8 PPLICTION C motor control of forklift (battery power source),

More information

1200 V 600 A IGBT Module

1200 V 600 A IGBT Module 1200 V 600 A IGBT RoHS Features Trench-gate field stop IGBT technology Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and

More information

5SNG 1000X PRELIMINARY LinPak phase leg IGBT module

5SNG 1000X PRELIMINARY LinPak phase leg IGBT module Data Sheet, Doc. No. 5SYA 1449- Aug 16 5SNG 1X173 PRELIMINARY LinPak phase leg IGBT module VCE = 17 V IC = 2 x 1 A Ultra low inductance phase-leg module Compact design with very high current density Paralleling

More information

FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE

FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FMTU- INSULTED PCKGE FMTU- ID(rms)... DSS... Insulated Type -elements in a pack NTC Thermistor inside UL Recognized Yellow Card No.E8 File No.E8 PPLICTION C motor conol of forklift (battery power source),

More information

STARPOWER IGBT GD600SGK120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD600SGK120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD6SGK12C2S 12V/6A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as short circuit ruggedness. They

More information

STARPOWER IGBT GD600HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD600HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT 1V/A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications

More information

) unless otherwise specified Symbol Description Values Units

) unless otherwise specified Symbol Description Values Units IGBT Modules VCES IC 10V A Applicatio Industrial Inverters Servo Applicatio SMPS UPS Induction Heating Circuit Features Short Circuit Rated 10μs Low Stray Inductance Low Saturation Voltage Ultra Low loss

More information

5SNA 1300K StakPak IGBT Module

5SNA 1300K StakPak IGBT Module Data Sheet, Doc. No. 5SYA 1432-1 1-216 5SNA 13K453 StakPak IGBT Module VCE = 45 V IC = 13 A Fails into stable shorted state Low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High

More information

STARPOWER IGBT GD600HFT120C2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD600HFT120C2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD600HFT120C2S_G8 1200V/600A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are

More information

ABB HiPak TM. IGBT Module 5SNA 1200E V CE = 2500 V I C = 1200 A

ABB HiPak TM. IGBT Module 5SNA 1200E V CE = 2500 V I C = 1200 A V CE = 25 V I C = 2 A ABB HiPak TM IGBT Module 5SNA 2E25 Doc. No. 5SYA 557-2 July 4 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC

More information

D1 D2 D3 T1 T2 T3 5 D4 D5 D6 T4 T5 T6 7

D1 D2 D3 T1 T2 T3 5 D4 D5 D6 T4 T5 T6 7 MIX 11WEH Six-Pack XPT IGBT CES 5 = = 155 CE(sat) = 1. Part name (Marking on product) MIX11WEH 13, 1 1 D1 D D3 T1 T T3 5 9 1 19 17 15 E773 3 D D5 D T T5 T 7 11 1, Features: Easy paralleling due to the

More information

STARPOWER IGBT GD450HFY120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD450HFY120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD45HFY12C2S 12V/45A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

STARPOWER IGBT GD300HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD300HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD3HFY12C6S 12V/3A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100 6MBIVX125 IGBT MODULE (V series) 12V / A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible

More information

PM15RSH120 Intellimod Module Three Phase + Brake IGBT Inverter Output 15 Amperes/1200 Volts

PM15RSH120 Intellimod Module Three Phase + Brake IGBT Inverter Output 15 Amperes/1200 Volts Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM15RSH12 Three Phase + Brake IGBT Inverter Output 15 Amperes/12 olts F S FO B R X T Y (15 TYP.) - DIA. (4 TYP.) X CC Outline

More information

PM10RSH120 Intellimod Module Three Phase + Brake IGBT Inverter Output 10 Amperes/1200 Volts

PM10RSH120 Intellimod Module Three Phase + Brake IGBT Inverter Output 10 Amperes/1200 Volts Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM1RSH12 Three Phase + Brake IGBT Inverter Output 1 Amperes/12 olts F S FO B R X T Y (15 TYP.) - DIA. (4 TYP.) X CC NC Q

More information

ABB HiPak TM. IGBT Module 5SNA 0800N V CE = 3300 V I C = 800 A

ABB HiPak TM. IGBT Module 5SNA 0800N V CE = 3300 V I C = 800 A V CE = 33 V I C = 8 A ABB HiPak TM IGBT Module 5SNA 8N33 Doc. No. 5SYA 59- Jan 7 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC

More information

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 75

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 75 7MBRVR IGBT MODULE (V series) 12V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor

More information

GSID300A120S5C1 6-Pack IGBT Module

GSID300A120S5C1 6-Pack IGBT Module 6-Pack IGBT Module Features: Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 1.9V @ I C = 3A, T C =25 Low Switching Loss 1% RBSOA Tested(2 Ic) Low Stray Inductance Lead Free, Compliant with

More information

PM150RL1A120 FLAT-BASE TYPE INSULATED PACKAGE

PM150RL1A120 FLAT-BASE TYPE INSULATED PACKAGE PMRL1 PMRL1 FETURE verter + Brake + Drive & Protection IC a) dopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM

More information

Six-Pack XPT IGBT MIXA30W1200TED. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TED

Six-Pack XPT IGBT MIXA30W1200TED. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TED MIX3W2TED Six-Pack XPT IGBT CES = 2 2 = 43 CE(sat) =.8 Part name (Marking on product) MIX3W2TED 2, 2, 9 7 NTC 2 23, 24 2, 22 9, 2 E 72873 8 3 7 Pin configuration see outlines. 4 27, 28 8 2 3, 4 Features:

More information

STARPOWER IGBT GD25PIT120C5S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1200V/25A PIM in one-package

STARPOWER IGBT GD25PIT120C5S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1200V/25A PIM in one-package STARPOWER SEMICONDUCTOR IGBT GD2PIT12CS Molding Type Module 12V/2A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

More information

GSID075A060B1A4. Preliminary Data Sheet GSID075A060B1A4. IGBT Module. Features: Application:

GSID075A060B1A4. Preliminary Data Sheet GSID075A060B1A4. IGBT Module. Features: Application: IGBT Module Features: Short Circuit Rated 5μs Low Saturation Voltage: V CE (sat) = 1.70V @ I C = A, T C =25 Low Switching Loss 100% RBSOA Tested(2 Ic) Low Stray Inductance Lead Free, Compliant with RoHS

More information

STGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features.

STGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features. Datasheet Trench gate field-stop, 65 V, 4 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature : T J = 175 C Low V CE(sat) = 1.55 V(typ.) @ I C = 4 A Co-packaged

More information

Converter - Brake - Inverter Module NPT IGBT

Converter - Brake - Inverter Module NPT IGBT dvanced Technical Information MI1WDTMH Converter - Brake - Inverter Module NPT IGBT Single Phase Rectifier Three Phase Inverter RRM = 1 CES = I DM5 = 35 I C5 = 1 I FSM = 7 CE(sat) =.1 Part name (Marking

More information

STARPOWER IGBT GD25FST120L2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD25FST120L2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD2FST2L2S_G8 2V/2A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

n-channel Solar Inverter Induction Heating G C E Gate Collector Emitter

n-channel Solar Inverter Induction Heating G C E Gate Collector Emitter INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON)

More information

STARPOWER IGBT GD1000HFL170P2S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1700V/1000A 2 in one-package

STARPOWER IGBT GD1000HFL170P2S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1700V/1000A 2 in one-package STARPOWER SEMICONDUCTOR IGBT GD1HFL17P2S Molding Type Module 17V/1A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

More information

Converter - Brake - Inverter Module XPT IGBT

Converter - Brake - Inverter Module XPT IGBT MIXWBTML Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = 16 CES = Three Phase Inverter CES = I DM2 = 1 2 = 17 2 = 28 I FSM = 3 CE(sat) = 1.8 CE(sat) = 1.8 Part name

More information

Converter - Brake - Inverter Module XPT IGBT

Converter - Brake - Inverter Module XPT IGBT MIX3WBTED Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = CES = Three Phase Inverter CES = I DM = 5 5 = 7 5 = 43 I FSM = 3 CE(sat) =. CE(sat) =. Part name (Marking

More information

STARPOWER IGBT GD30PJT60L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD30PJT60L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD3PJT6L2S 6V/3A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100 7MBR1VP65 IGBT MODULE (V series) 6V / 1A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for

More information

STARPOWER IGBT GD25FSY120L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD25FSY120L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD25FSY2L2S 2V/25A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

Target Specification (Tentative)

Target Specification (Tentative) Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали www.fotorele.net e:mail minsk17@tut.by Беларусь г.минск тел./факс 8(17)2646 www.fotorele.net e:mail minsk17@tut.by Fuji Electric

More information

Converter - Inverter Module NPT IGBT

Converter - Inverter Module NPT IGBT dvanced Technical Information MI15WDTMH Converter - Inverter Module NT IGBT Single hase Rectifier Three hase Inverter RRM = 1 CES = I DM5 = 5 I C5 = 3 I FSM = 55 CE(sat) =.1 art name (Marking on product)

More information

10 23, 24 21, 22 19, , 14

10 23, 24 21, 22 19, , 14 MWI -T7T Six-Pack Trench IGBT = S = (sat) typ. = 1.7 Part name (Marking on product) MWI -T7T, 1, 1 1 9 17 NTC 1 3, 1, 19, E773 1 3 7 11 Pin configuration see outlines. 7, 13, 1 Features: Trench IGBT technology

More information

V (4TYP) U (5TYP) L 0.69± ±0.25 M N P Q R S M6 Metric M6 T 0.63 Min Min.

V (4TYP) U (5TYP) L 0.69± ±0.25 M N P Q R S M6 Metric M6 T 0.63 Min Min. QID42 Powerex, Inc., 7 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 92-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module Amperes/4 Volts S NUTS (TYP) F A D F J (2TYP) N 7 8 H B E 2 6 M H 4 V (4TYP) G (TYP)

More information

20MT120UF "FULL-BRIDGE" IGBT MTP. UltraFast NPT IGBT V CES = 1200V I C = 40A T C = 25 C. 5/ I27124 rev. D 02/03. Features.

20MT120UF FULL-BRIDGE IGBT MTP. UltraFast NPT IGBT V CES = 1200V I C = 40A T C = 25 C. 5/ I27124 rev. D 02/03. Features. 5/ I27124 rev. D 2/3 "FULL-BRIDGE" IGBT MTP 2MT12UF UltraFast NPT IGBT Features UltraFast Non Punch Through (NPT) Technology Positive V CE(ON) Temperature Coefficient 1µs Short Circuit Capability HEXFRED

More information

Converter - Brake - Inverter Module (CBI 1) Trench IGBT

Converter - Brake - Inverter Module (CBI 1) Trench IGBT Converter - Brake - Inverter Module (CBI 1) Trench IGBT Preliminary data Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 16 CES = 12 CES = 12 I DM25 = 151 I C25 = 19 I C25 = 43 I FSM = 32

More information

W - DIA. (4 TYP.) AE AG AH AJ R

W - DIA. (4 TYP.) AE AG AH AJ R M6HA-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (72) 925-7272 www.pwrx.com Single IGBT A-Series Module 6 Amperes/12 Volts H G F D K J W - DIA. ( TYP.) AF A AG Y X Y Z G AA K B A

More information

U N V VPC G F V WPI W FO 12. UP U FO VP V FO V VPI GND GND IN GND GND IN V CC. Dimensions Inches Millimeters N

U N V VPC G F V WPI W FO 12. UP U FO VP V FO V VPI GND GND IN GND GND IN V CC. Dimensions Inches Millimeters N PM3RSF6 A D N R R R X (15 TYP.) H J V M 12 34 5678 9 11 2 2 21 22 23 24 25 E C B 13 15 17 19 14 16 18 P P P P P Y T - DIA. (2 TYP.) S 2. X.5 MM PIN (6 TYP.).8 X.4 MM PIN (19 TYP.) Q L W G F K 1. V UPC

More information

Absolute Maximum Ratings Parameter Max. Units

Absolute Maximum Ratings Parameter Max. Units PD - 97397A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses 5 µs short circuit SOA Square RBSOA % of the parts tested

More information

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 75

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 75 7MBRVP65 IGBT MODULE (V series) 6V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor

More information

IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF

IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF PD - 973 INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology 1µs Short Circuit Capability Square RBSOA G Positive VCE (on) Temperature Coefficient Maximum Junction

More information

X (11 PLACES) TERMINAL CODE 1 SUP 2 SVP 3 SWP 4 SUN 5 SVN 6 SWN 7 GUP 8 GVP 9 GWP 10 GUN (13) 11 GVN 12 GWN 13 TH1 14 TH2 (14)

X (11 PLACES) TERMINAL CODE 1 SUP 2 SVP 3 SWP 4 SUN 5 SVN 6 SWN 7 GUP 8 GVP 9 GWP 10 GUN (13) 11 GVN 12 GWN 13 TH1 14 TH2 (14) Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module G Q G H K L A D F M L N X (11 PLACES) P R AD AB AC J P N Z AB AE Outline Drawing

More information

=25 C Avalanche Energy, single pulse 65 I C. C Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case)

=25 C Avalanche Energy, single pulse 65 I C. C Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case) PD- 94117 IRGP2B12U-E INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT UltraFast Non Punch Through (NPT) Technology 1 µs Short Circuit capability Square RBSOA Positive V CE (on) Temperature Coefficient

More information

Six-Pack XPT IGBT MIXA80W1200TEH V CES I C25 = 1200 V. Part name (Marking on product) MIXA80W1200TEH

Six-Pack XPT IGBT MIXA80W1200TEH V CES I C25 = 1200 V. Part name (Marking on product) MIXA80W1200TEH MIXW1TEH Six-Pack XPT IGBT CES = 1 = 1 CE(sat) = 1. Part name (Marking on product) MIXW1TEH 3, 31, 3 1, 17, 1 1 T1 D1 T3 D3 9 T D 19 NTC 3 T D 7 9 7 T D 1 11 T D 1 3 E773 Pin configuration see outlines.

More information

IRGP30B60KD-EP V CES = 600V I C = 30A, T C =100 C. t sc > 10µs, T J =150 C. V CE(on) typ. = 1.95V. Absolute Maximum Ratings. Thermal Resistance

IRGP30B60KD-EP V CES = 600V I C = 30A, T C =100 C. t sc > 10µs, T J =150 C. V CE(on) typ. = 1.95V. Absolute Maximum Ratings. Thermal Resistance INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Non Punch Through IGBT Technology. Low Diode V F. 1µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode

More information