FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE

Transcription

1 FMTU- INSULTED PCKGE FMTU- ID(rms)... DSS... Insulated Type -elements in a pack NTC Thermistor inside UL Recognized Yellow Card No.E8 File No.E8 PPLICTION C motor conol of forklift (battery power source), UPS OUTLINE DRING & CIRCUIT DIGRM Dimensions in mm (.) () N P (.) () (.) (). (.8). U (8.) LBEL. (SCREING DEPTH) B CIRCUIT DIGRM P Tc measured point Housing Type of and B (Tyco Eleconics P/N:) : 9- B: 988- ()GUP ()SUP (8)GP ()SP (9)GP ()SP ()GUN ()SUN N U ()GN ()SN ()GN ()SN () () NTC ()SUP ()GUP ()TH ()SP (8)GP ()TH ()SP (9)GP ()SUN ()GUN ()SN ()GN ()SN ()GN B Feb. 9

2 FMTU- INSULTED PCKGE BSOLUTE MXIMUM RTINGS (Tch = C unless otherwise specified.) DSS GSS ID(rms) IDM ID IS(rms)* ISM* PD* PD* Tch Tstg iso Item Drain-source voltage Gate-source voltage Drain current valanche current Source current Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mounting torque eight G-S Short D-S Short TC = C* Pulse* L = µh Pulse* Pulse* TC = C TC = C* Terminals to base plate, f = Hz, C minute Main terminals M screw Mounting M screw Typical value Ratings ± ~ + ~ +. ~.. ~. rms rms C C rms N m N m g ELECTRICL CHRCTERISTICS (Tch = C unless otherwise specified.) IDSS GS(th) IGSS rds(on) (chip) DS(ON) (chip) R(lead) Ciss Coss Crss QG tf r* Qrr* SD* Rth(ch-c) Rth(ch-c ) Rth(c-f) Rth(c -f ) Item Drain cutoff current Gate-source threshold voltage Gate leakage current Static drain-source On-state resistance Static drain-source On-state voltage Lead resistance Input capacitance Output capacitance Reverse ansfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Source-drain voltage Thermal resistance Contact thermal resistance DS = DSS, GS = ID = m, DS = GS = GSS, DS = GS = GS = terminal-chip DS = GS = DD = 8,, GS = DD = 8,, GS ± RG = Ω, IS = Tch = C Tch = C Tch = C Tch = C Tch = C Tch = C IS =, GS = MOSFET part (/ module)* MOSFET part (/ module)* Case to heat sink, Thermal grease pplied* 8 (/ module) Case to heat sink, Thermal grease pplied*, * 8 (/ module) Min.. Limits Typ Max m µ mω mω nf nc ns ns µc K/ NTC THERMISTOR PRT Limits Parameter Min. Typ. RTh* Resistance TTh = C* B* B Constant Resistance at TTh = C, C* * : It is characteristics of the anti-parallel, source-drain free-wheel diode (FDi). * : Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating. * : Case Temperature (Tc ) measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips. * : Pulse width and repetition rate should be such as to cause negligible temperature rise. * : TTh is thermistor temperature. R *: B = In( )/( ) R T T R: resistance at absolute temperature T [K]: T = [ C]+. = 98. [K] R: resistance at absolute temperature T [K]: T = [ C]+. =. [K] * : Case Temperature (Tc) measured point is shown in page OUTLINE DRING. 8: Typical value is measured by using thermally conductive grease of λ =.9[/(m K)]. * Max. kω K Feb. 9

3 FMTU- INSULTED PCKGE PERFORMNCE CURES OUTPUT CHRCTERISTICS GS = TRNSFER CHRCTERISTICS DS = DRIN CURRENT ID () 8 9 DRIN CURRENT ID () Tch = C Tch = C Tch = C DRIN-SOURCE OLTGE DS () GTE-SOURCE OLTGE GS () DRIN-SOURCE ON-STTE RESISTNCE rds(on) (mω) 8 DRIN-SOURCE ON-STTE OLTGE S. TEMPERTURE GS = GS = 8 GTE THRESHOLD OLTGE GS(th) () GTE THRESHOLD OLTGE S. TEMPERTURE DS = ID = m 8 CHNNEL TEMPERTURE Tch ( C) CHNNEL TEMPERTURE Tch ( C) DRIN-SOURCE ON-STTE OLTGE DS(ON) () DRIN-SOURCE ON-STTE OLTGE S. GTE BIS Tch = C ID = ID = 8 CPCITNCE (nf) CPCITNCE S. DRIN-SOURCE OLTGE GS = Ciss Coss Crss GTE-SOURCE OLTGE GS () DRIN-SOURCE OLTGE DS () Feb. 9

4 FMTU- INSULTED PCKGE GTE-SOURCE OLTGE GS () 8 GTE CHRGE CHRCTERISTICS DD = DD = SOURCE CURRENT IS () FREE-HEEL DIODE FORRD CHRCTERISTICS GS = Tch = C Tch = C GTE CHRGE QG (nc) SOURCE-DRIN OLTGE SD () SITCHING TIME (ns) HLF-BRIDGE SITCHING CHRCTERISTICS tf DD = 8 GS = ± RG = Ω Tch = C SITCHING TIME (ns) HLF-BRIDGE SITCHING CHRCTERISTICS tf DD = 8 GS = ± Tch = C 8 DRIN CURRENT ID () GTE RESISTNCE RG (Ω) SITCHING LOSS (mj/pulse) HLF-BRIDGE SITCHING CHRCTERISTICS Eon Err DD = 8 GS = ± RG = Ω Eoff Tch = C SITCHING LOSS (mj/pulse) HLF-BRIDGE SITCHING CHRCTERISTICS Eon Err Eoff DD = 8 GS = ± Tch = C 8 DRIN CURRENT ID () GTE RESISTNCE RG (Ω) Feb. 9

5 FMTU- INSULTED PCKGE Irr (), r (ns) REERSE RECOERY CHRCTERISTICS OF FREE-HEEL DIODE r Irr DD = 8 GS = ± RG = Ω Tch = C NORMLIZED TRNSIENT THERML IMPEDNCE Zth(ch-c) TRNSIENT THERML IMPEDNCE CHRCTERISTICS Single pulse Tch = C Per unit base = Rth(ch-c) =.K/ SOURCE CURRENT IS () TIME (s) CHIP LYOUT () (9) N P () (8) (9) LBEL SIDE U Feb. 9