FM600TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE

Transcription

1 FMTU- INSULTED PCKGE FMTU- ID(rms)... DSS... Insulated Type -elements in a pack Thermistor inside UL Recognized Yellow Card No.E8 File No.E8 PPLICTION C motor control of forklift (battery power source), UPS OUTLINE DRING & CIRCUIT DIGRM Dimensions in mm (.) () N P (.) () (.) (). (.8). U (8.) LBEL. (SCREING DEPTH) B CIRCUIT DIGRM P Tc measured point Housing Type of and B (Tyco Electronics P/N:) : 9- B: 988- ()GUP ()SUP (8)GP ()SP (9)GP ()SP ()GUN ()SUN N U () ()GN ()SN ()GN ()SN () ()SUP ()GUP ()TH ()SP (8)GP ()TH ()SP (9)GP ()SUN ()GUN ()SN ()GN ()SN ()GN B May

2 FMTU- INSULTED PCKGE BSOLUTE MXIMUM RTINGS (Tch = C unless otherwise specified.) DSS GSS ID IDM ID IS ISM PD PD Tch Tstg iso Item Drain-source voltage Gate-source voltage Drain current valanche current Source current Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mounting torque eight G-S Short D-S Short TC = 9 C Pulse L = µh Pulse Pulse TC = C TC = C Main terminal to base plate, C min. Main Terminal M Mounting M Typical value Ratings ± 9 ~ + ~ +. ~.. ~. C C N m N m g ELECTRICL CHRCTERISTICS (Tch = C unless otherwise specified.) IDSS GS(th) IGSS rds(on) (chip) DS(ON) (chip) R(lead) Ciss Coss Crss QG tr tf trr Qrr SD Rth(ch-c) Rth(ch-c ) Rth(c-f) Rth(c -f ) Item Drain cutoff current Gate-source threshold voltage Gate leakage current Static drain-source On-state resistance Static drain-source On-state voltage Lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Source-drain voltage Thermal resistance Contact thermal resistance DS = DSS, GS = ID = m, DS = GS = GSS, DS = ID = GS = ID = GS = ID = terminal-chip DS = GS = DD = 8, ID =, GS = DD = 8, ID =, GS = GS = RG =.Ω, switching operation IS = Tch = C Tch = C Tch = C Tch = C Tch = C Tch = C IS =, GS = MOSFET part (/ module) MOSFET part (/ module) Case to fin, Thermal grease pplied 8 (/ module) Case to fin, Thermal grease pplied, 8 (/ module) Min.. Limits Typ Max m µ mω mω nf nc ns ns µc C/ THERMISTOR PRT RTH B Resistance B Constant Parameter TTH = C Resistance at TTH = C, C : It is characteristics of the anti-parallel, source to drain free-wheel diode (FDi). : Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating. : TC measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips. : Pulse width and repetition rate should be such as to cause negligible temperature rise. : TTH is thermistor temperature. : B = (InR-InR)/(/T-/T) R: Resistance at T(K), R: Resistance at T(K) : TC measured point is shown in page OUTLINE DRING. 8: Typical value is measured by using Shin-Etsu Chemical Co., Ltd G-. Min. Limits Typ. Max. kω K May

3 FMTU- INSULTED PCKGE PERFORMNCE CURES DRIN CURRENT ID () OUTPUT CHRCTERISTICS GS = 9 Tch = C DRIN CURRENT ID () TRNSFER CHRCTERISTICS DS = Tch = C Tch = C 9 DRIN-SOURCE OLTGE DS () GTE-SOURCE OLTGE GS () DRIN-SOURCE ON-STTE RESISTNCE rds(on) (mω) DRIN-SOURCE ON-STTE OLTGE S. TEMPERTURE ID = GS = GS = 8 GTE THRESHOLD OLTGE GS(th) () GTE THRESHOLD OLTGE S. TEMPERTURE DS = ID = m 8 CHNNEL TEMPERTURE Tch ( C) CHNNEL TEMPERTURE Tch ( C) DRIN-SOURCE ON-STTE OLTGE DS(ON) () DRIN-SOURCE ON-STTE OLTGE S. GTE BIS Tch = C ID = ID = ID = 8 CPCITNCE (nf) CPCITNCE S. DRIN-SOURCE OLTGE GS = Ciss Coss Crss GTE-SOURCE OLTGE GS () DRIN-SOURCE OLTGE DS () May

4 FMTU- INSULTED PCKGE GTE-SOURCE OLTGE GS () 8 GTE CHRGE CHRCTERISTICS ID = DD = DD = SOURCE CURRENT IS () FREE-HEEL DIODE FORRD CHRCTERISTICS GS = Tch = C Tch = C GTE CHRGE QG (nc) SOURCE-DRIN OLTGE SD () SITCHING TIME (ns) HLF-BRIDGE SITCHING CHRCTERISTICS tr tf DD = 8 GS = ± RG =.Ω Tch = C SITCHING TIME (ns) HLF-BRIDGE SITCHING CHRCTERISTICS tr DD = 8 GS = ± ID = Tch = C tf DRIN CURRENT ID () GTE RESISTNCE RG (Ω) SITCHING LOSS (mj/pulse) HLF-BRIDGE SITCHING CHRCTERISTICS Esw(off) Esw(on) Err DD = 8 GS = ± RG =.Ω Tch = C SITCHING LOSS (mj/pulse) HLF-BRIDGE SITCHING CHRCTERISTICS Esw(off) Esw(on) Err DD = 8 GS = ± ID = Tch = C DRIN CURRENT ID () GTE RESISTNCE RG (Ω) May

5 FMTU- INSULTED PCKGE Irr (), trr (ns) REERSE RECOERY CHRCTERISTICS OF FREE-HEEL DIODE Irr DD = 8 GS = ± RG =.Ω Tch = C trr NORMLIZED TRNSIENT THERML IMPEDNCE Zth(ch-c) TRNSIENT THERML IMPEDNCE CHRCTERISTICS Single pulse Tch = C Per unit base = Rth(ch-c) =. C/ SOURCE CURRENT IS () TIME (s) CHIP LYOUT () (9) N P TrUP TrP TrP () (8) (9) TrUN TrN TrN LBEL SIDE U May