LNTA4001NT1G S-LNTA4001NT1G. Small Signal MOSFET 20 V, 238 ma, Single, N-Channel, Gate ESD Protection LESHAN RADIO COMPANY, LTD.

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1 Small Signal MOSFET V, 38 ma, Single, N-Channel, Gate ESD Protection Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate Pb-Free Package is Available ESD Protected:V Protected:5V ESD S- Prefix Protected:5V for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q Qualified and PPAP Capable. Applications Power Management Load Switch Level Shift Portable Applications such as Cell Phones, Media Players, Digital Cameras, PDA's, Video Games, Hand Held Computers, etc. MAXIMUM RATINGS ( unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage V DSS V Gate-to-Source Voltage V GS ± V Continuous Drain Current (Note ) Power Dissipation (Note ) Steady State = 5 C I D 38 ma Steady State = 5 C P D 3 mw Pulsed Drain Current t P s I DM 74 ma Operating Junction and Storage Temperature T J, T STG -55 to 5 Continuous Source Current (Body Diode) I SD 38 ma Lead Temperature for Soldering Purposes (/8 from case for s) C T L 6 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient Steady State (Note ) R JA 46 C/W. Surface-mounted on FR4 board using in sq. pad size (Cu area =.7 in sq. [ oz] including traces). LNTA4NTG S-LNTA4NTG V (BR)DSS R DS(on) V GS I D MAX (Note ) 4.5 V 38 V Gate Source TF M PIN CONNECTIONS SC-89 (3-Leads) (Top View) MARKING DIAGRAM 3 SC-89 TF M = Specific Device Code = Month Code ORDERING INFORMATION Device Package Shipping 3 Drain LNTA4NTG S-LNTA4NTG SC-89 3 Tape & Reel LNTA4NT3G S-LNTA4NT3G SC-89 Tape & Reel Rev.O /5

2 ELECTRICAL CHARACTERISTICS ( unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V (BR)DSS V GS = V, I D = A V Zero Gate Voltage Drain Current I DSS V GS = V, V DS = V. A Gate-to-Source Leakage Current I GSS V DS = V, V GS = ± V ± A ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) V DS = 3 V, I D = A.5..5 V Drain-to-Source On Resistance R DS(on), I D = ma.5 3. V GS =.5 V, I D = ma. 3.5 Forward Transconductance g FS V DS = 3 V, I D = ma 5 ms CAPACITANCES Input Capacitance C ISS.5 Output Capacitance C OSS V DS = 5 V, f = MHz, V GS = V 5 Reverse Transfer Capacitance C RSS SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time t r, V DS = 5 V, 5 Turn-Off Delay Time t d(off) I D = ma, R G = 98 Fall Time t f 6 t d(on) pf 3 ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V SD V GS = V, I S = ma.66.8 V. Pulse Test: pulse width 3 s, duty cycle %. 3. Switching characteristics are independent of operating junction temperatures. LNTA4NTG, S-LNTA4NTG ns Rev.O /5

3 LNTA4NTG, S-LNTA4NTG TYPICAL PERFORMANCE CURVES V GS = V V GS = 5 V V GS =.8 V V GS =.4 V. V GS =. V V GS = V V GS =.4 V VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure. On-region Characteristics VDS = 5 V T J = -55 C V GS, GATE-TO-SOURCE VOLTAGE (V) Figure. Transfer Characteristics RESISTANCE ( ).5.5 T J = -55 C RESISTANCE ( ).5.5 V GS =.5 V Figure 3. On-resistance versus Drain Current and Temperature Figure 4. On-resistance versus Drain Current and Gate Voltage RESISTANCE (NORMALIZED) I D =. A T J, JUNCTION TEMPERATURE ( C) Figure 5. On-resistance Variation with Temperature I DSS, LEAKAGE (na) V GS = V T J = 5 C 5 5 V DS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6. Drain-to-Source Leakage Current versus Voltage Rev.O 3/5

4 TYPICAL PERFORMANCE CURVES LNTA4NTG, S-LNTA4NTG C, CAPACITANCE (pf) 5 5 Ciss Crss 5 Crss VDS = V V GS = V V GS VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Ciss Coss t, TIME (ns) V DD = 5 V I D = ma t d(off) t f t r t d(on) R G, GATE RESISTANCE ( ) Figure 8. Resistive Switching Time Variation versus Gate Resistance I S, SOURCE CURRENT (A) V GS = V V SD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage versus Current Rev.O 4/5

5 LNTA4NTG, S-LNTA4NTG SC-89 NOTES:.DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98..CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL C- OBSOLETE, NEW STANDARD 463C-. Rev.O 5/5