LABEL ± TH1(11) NTC TH2(10)

Transcription

1 CMRX- CMRX-... CES... pack (-phase Inverter + Brake) Flatbase ype / Insulated ackage / Copper (non-plating) base plate RoHS Directive compliant LIO General purpose Inverters, Servo mplifiers OUL DRWIG & CIRCUI DIGRM.. φ4. φ. φ. SECIO (.) (.4). (.) LBEL ± (.) () 4... (.).. 4-φ. MOUIG HOLES 4. (). Dimensions in mm ERMIL t =.. (.4) (.) () (.4). (SCREWIG DEH) + -. () B(4) GB() EB() () Gu(4) Eu() Gu() Eu(9) (.4). U() Gv() Ev() Gv() Ev() Gw() Ew() () Gw(4) Ew() CIRCUI DIGRM C W() H() H() 9 -M US 9 ± in positions with tolerance φ. Division of Dimension. to over to over to over to over to 4 olerance ±. ±. ±. ±. ±. Jan. 9

2 CMRX- BSOLUE MXIMUM RIGS (j = C, unless otherwise specified) RER R Symbol arameter Conditions Rating CES GES RM C (ote.) RM(ote.) Collector-emitter voltage Gate-emitter voltage Collector current Maximum collector dissipation Emitter current (Free wheeling diode forward current) G-E Short C-E Short DC, C = C ulse C = C C = C ulse (ote. 4) (ote., ) (ote. 4) ± W BRKE R Symbol arameter Conditions CES GES Collector-emitter voltage Gate-emitter voltage G-E Short C-E Short DC, C = C Collector current RM ulse C RRM(ote.) Maximum collector dissipation Repetitive peak reverse voltage C = C IF (ote.) C = C Forward current IFRM(ote.) ulse (ote. 4) (ote., ) (ote. 4) Rating ± W MODULE Symbol arameter Conditions j stg iso Junction temperature Storage temperature Isolation voltage Base plate flatness erminals to base plate, f = Hz, C minute On the centerline X, Y (ote. ) orque strength orque strength Weight Main terminals Mounting (ypical) M screw M screw ote. : he base plate flatness measurement points are in the following figure. Rating 4 ~ + 4 ~ + ± ~ +. ~.. ~. C rms μm m g Jan. 9

3 CMRX- ELECRL CHRCERISS (j = C, unless otherwise specified) RER R ES GE(th) IGES CE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr Symbol arameter Conditions (ote.) Qrr (ote.) EC(ote.) Rth(j-c)Q Rth(j-c)R RGint RG Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance otal gate charge urn-on delay time urn-on rise time urn-off delay time urn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage hermal resistance (Junction to case) Internal gate resistance External gate resistance CE = CES, GE = = m, CE = ±GE = GES, CE = =, GE = =, GE = CE = GE = CC =, =, GE = CC =, = GE = ±, RG =.Ω ( = ) =, GE = =, GE = per IGB per free wheeling diode C = C, per switch (ote. ) (ote. ) j = C j = C Chip (ote. ) j = C j = C Chip Limits Min. yp. Max m μ nf nc ns μc K/W Ω BRKE R Symbol arameter Conditions ES GE(th) IGES CE(sat) Cies Coes Cres QG IRRM(ote.) FM(ote.) Rth(j-c)Q Rth(j-c)R RGint RG Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance otal gate charge Repetitive peak reverse current Forward voltage drop hermal resistance (Junction to case) Internal gate resistance External gate resistance CE = CES, GE = =.m, CE = ±GE = GES, CE = =, GE = =, GE = CE = GE = CC =, =, GE = R = RRM IF = IF = per IGB per Clamp diode C = C (ote. ) (ote. ) j = C j = C Chip (ote. ) j = C j = C Chip Limits Min. yp. Max m μ nf nc m K/W Ω Jan. 9

4 CMRX- C HERMISOR R Symbol arameter Conditions R ΔR/R B(/) Zero power resistance Deviation of resistance B constant ower dissipation C = C C = C, R = 49Ω pproximate by equation C = C (ote. ) Limits Min. yp. Max kω % K mw MODULE Symbol arameter Conditions Rth(c-f) Contact thermal resistance (Case to fin) hermal grease applied per module (ote. ) Limits Min. yp. Max.. K/W ote.: Case temperature (C), heat sink temperature (f) measured point is just under the chips. (Refer to the figure of the chip location.) : ypical value is measured by using thermally conductive grease of λ =.9W/(m K). :, RM, EC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). IF, IFRM, F, RRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part. 4: ulse width and repetition rate should be such that the device junction temperature (j) dose not exceed jmax rating. : Junction temperature (j) should not increase beyond C. : ulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for CE(sat) and EC) R : B(/) = In( )/( ) R R: resistance at absolute temperature [K]; = [ C]+. = 9. [K] R: resistance at absolute temperature [K]; = [ C]+. =. [K] Chip Location (op view) LBEL SIDE.. (Di/U). (Di/U) (Di/) 4.. (Di/). 9. (Di/W) (Di/W) Dimensions in mm (tolerance: ±mm) (.) () () U r D U i U r D U i r r W r W B r r W h W B r r (.9) () (.) Each mark points the center position of each chip. r**: IGB, Di**: FWDi (DiBr: Clamp diode), h: C thermistor Jan. 9 4

5 MISUBISHI IGB MODULES CMRX- GE = Gu GE = Gu Eu Eu U U B GE = Gu GE = Gu GE = GB Eu Eu EB side Inverter part r (example of U arm) GE = (Gv-Ev, Gw-Ew, Gv-Ev, Gw-Ew, GB-EB) side Inverter part r (example of U arm) GE = (Gv-Ev, Gw-Ew, Gv-Ev, Gw-Ew, GB-EB) CE(sat) test circuit Br r GE = (Gu-Eu, Gv-Ev, Gw-Ew, Gu-Eu, Gv-Ev, Gw-Ew) GE = Gu GE = Gu IF Eu U Eu U B GE = Gu GE = Gu GE = GB Eu Eu EB side Inverter part Di (example of U arm) GE = (Gv-Ev, Gw-Ew, Gv-Ev, Gw-Ew, GB-EB) side Inverter part Di (example of U arm) GE = (Gv-Ev, Gw-Ew, Gv-Ev, Gw-Ew, GB-EB) EC/FM test circuit Br Di GE = (Gu-Eu, Gv-Ev, Gw-Ew, Gu-Eu, Gv-Ev, Gw-Ew) rm GE 9% % trr GE Load + CC 9% t +GE GE RG GE CE td(on) tr td(off) tf % Irr / Irr Qrr = / Irr trr Switching time test circuit and waveforms trr, Qrr test waveform Jan. 9

6 CMRX- ERFORMCE CURES COLLECOR CURRE () GE = OUU CHRCERISS j = C COLLECOR-EMR SURIO OLGE CE(sat) ()... COLLECOR-EMR SURIO OLGE CHRCERISS GE =. j = C j = C COLLECOR-EMR OLGE CE () COLLECOR CURRE () COLLECOR-EMR SURIO OLGE CE(sat) () 4 COLLECOR-EMR SURIO OLGE CHRCERISS j = C = = = 4 EMR CURRE () FREE WHEELIG DIODE FORWRD CHRCERISS j = C j = C GE-EMR OLGE GE () EMR-COLLECOR OLGE EC () CCICE (nf) CCICE CHRCERISS Cies Coes Cres GE = SWICHIG IME (ns) HLF-BRIDGE SWICHIG CHRCERISS td(off) td(on) Conditions: CC = GE = ± RG =.Ω tr j = C tf COLLECOR-EMR OLGE CE () COLLECOR CURRE () Jan. 9

7 CMRX- SWICHIG IME (ns) HLF-BRIDGE SWICHIG CHRCERISS tf td(off) Conditions: td(on) CC = tr GE = ± = j = C SWICHIG LOSS (mj/pulse) HLF-BRIDGE SWICHIG CHRCERISS Eoff Eon Err Conditions: CC = GE = ± RG =.Ω j = C GE RESISCE RG (Ω) COLLECOR CURRE () EMR CURRE () SWICHIG LOSS (mj/pulse) HLF-BRIDGE SWICHIG CHRCERISS Conditions: CC = GE = ±, = j = C Eon Eoff Err lrr (), trr (ns) REERSE RECOERY CHRCERISS OF FREE WHEELIG DIODE Conditions: CC = GE = ± RG =.Ω j = C Irr trr GE RESISCE RG (Ω) EMR CURRE () GE-EMR OLGE GE () GE CHRGE CHRCERISS = CC = CC = 4 ORMLIZED RS HERML IMEDCE Zth(j c) RS HERML IMEDCE CHRCERISS Single pulse C = C Inverter IGB part : er unit base = Rth(j c) =.4K/W Inverter FWDi part : er unit base = Rth(j c) =.4K/W Brake IGB part : er unit base = Rth(j c) =.44K/W Brake Clamp-Di part : er unit base = Rth(j c) =.K/W 4 GE CHRGE QG (nc) IME (s) Jan. 9

8 CMRX- COLLECOR-EMR SURIO OLGE CE(sat) ()... COLLECOR-EMR SURIO OLGE CHRCERISS (YL) Brake part GE =. j = C j = C FORWRD CURRE IF () CLM DIODE FORWRD CHRCERISS (YL) Brake part j = C j = C COLLECOR CURRE () FORWRD OLGE F () Jan. 9