PM75B4LA060 PM75B4LB060 Photo Voltaic IPM H-Bridge 75 Amperes/600 Volts
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1 M75B4LA060 M75B4LB060 hoto oltaic IM 75 Amperes/600 olts ackage A E F L H J J A D G M J TERMAL CODE 1 C 2 FO C 6 FO C 10 C AD W AE Q AG (2 LACES) B W R T AF AB (6 LACES) AA C B S AC (2 LACES) Z 11 C 12 C 13 C C C 19 FO Description: owerex Intellimod 5th generation -IMs are isolated base modules designed for power switching applications operating at frequencies to 30kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. C FO C C 1 C C C C C Outline Drawing and Circuit Diagram A B C D E F G H J L M Q R CC CC C C FO CC 1 C S T W Z AA AB M5 Metric M5 AC 0.22 Dia. Dia. 5.5 AD AE AF 0.02 Sq. Sq. 0.5 AG 0.10 Dia. Dia. 2.5 FO CC 1 Features: Complete Output ower Circuit Gate Drive Circuit rotection Logic Short Circuit Over Temperature sing On-chip Temperature Sensing nder oltage Low Loss sing 5th Generation IGBT Chip Applications: Inverters S ower Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. M75B4LA060 (ackage A) is a 600, 75 Ampere -IM. Type Current Rating CES Amperes olts (x 10) M
2 M75B4LA060 / M75B4LB060 hoto oltaic IM 75 Amperes/600 olts ackage B AB (4 LACES) E F A D G L M H J J J TERMAL CODE 1 C 2 FO C 6 FO 7 AA Z AD C S T A R AE (2 LACES) B AM A Q AL W AG W AF B AC (2 LACES) C FO C FO C FO C C 1 C C C C 1 1 AH AJ C 10 C 11 C 12 C 13 C C C 19 FO Description: owerex Intellimod 5th generation -IMs are isolated base modules designed for power switching applications operating at frequencies to 30kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. C Outline Drawing and Circuit Diagram A B C D E F G H J L M Q R S T CC CC C CC CC W Z AA AB 0.10 Dia. Dia. 2.5 AC 0.22 Dia. Dia. 5.5 AD AE 0.10 Dia. Dia. 2.5 AF AG AH AJ A AL 0.02 Sq. Sq. 0.5 AM A Features: Complete Output ower Circuit Gate Drive Circuit rotection Logic Short Circuit Over Temperature sing On-chip Temperature Sensing nder oltage Low Loss sing 5th Generation IGBT Chip Applications: Inverters S ower Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. M75B4LB060 (ackage B) is a 600, 75 Ampere -IM. Type Current Rating CES Amperes olts (x 10) M
3 M75B4LA060 / M75B4LB060 hoto oltaic IM 75 Amperes/600 olts Absolute Maximum Ratings, unless otherwise specified Characteristics Symbol M75B4LA060 / M75B4LB060 nits ower Device Junction Temperature T j -20 to 150 C Storage Temperature T stg -40 to 125 C Module Case Operating Temperature (ote 1) T C -20 to 100 C Mounting Torque, M5 Mounting Screws 31 in-lb Mounting Torque, M5 Main Terminal Screws (ackage A only) 31 in-lb ackage A Module Weight (Typical) 380 Grams ackage B Module Weight (Typical) 340 Grams Supply oltage, Surge (Applied between -) CC(surge) 500 olts Operation of Short Circuit rotections CC(prot.) 400 olts (Applied between -, D = 13.5 ~ 16.5, Inverter art, Start) Isolation oltage, AC 1 minute, 60Hz Sinusoidal ISO 2500 olts IGBT Inverter art Collector-Emitter oltage ( D = 15, C = 15) CES 600 olts Collector Current (T C = 25 C) ±I C 75 Amperes eak Collector Current (T C = 25 C) ±I C 150 Amperes Collector Dissipation (T C = 25 C) (ote 1) C 390 Watts Control art Supply oltage (Applied between 1 - C, 1 - C, 1 - C ) D 20 olts Input oltage (Applied between - C, - C, - - C ) C 20 olts Fault Output Supply oltage FO 20 olts (Applied between FO - C, FO - C, - C ) Fault Output Supply Current (Sink Current at FO, FO, Terminals) I FO 20 ma Electrical and Mechanical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. nits IGBT Inverter art Collector-Emitter Saturation oltage CE(sat) D = 15, C = 0, I C = 75A, 1.7 olts ulsed, D = 15, C = 0, I C = 75A, 1.55 olts ulsed, Diode Forward oltage EC -I C = 75A, C = 15, D = olts Inductive Load Switching Times t on µs t rr D = 15, C = µs t C(on) CC = 300,, I C = 75A µs t off Inductive Load (er 1 Arm) µs t C(off) µs Collector-Emitter Cutoff Current I CES CE = CES, C = 15, 1.0 ma CE = CES, C = 15, 10 ma 3
4 M75B4LA060 / M75B4LB060 hoto oltaic IM 75 Amperes/600 olts Electrical and Mechanical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. nits Control art Control Supply oltage D Applied between olts 1 - C, 1 - C, 1 - Circuit Current I D D = 15, C = 15, 1 - C ma D = 15, C = 15, 1 - C 5 10 ma Input O Threshold oltage th(on) Applied between - C, olts Input OFF Threshold oltage th(off) - C, - - W -Br- C olts Short Circuit Trip Level* SC Inverter art 150 Amperes Short Circuit Current Delay Time t off(sc) D = µs Over Temperature rotection** Trip Level C ( D = 15) r Reset Level 125 C Supply Circuit nder-voltage rotection Trip Level olts (T j 125 C) r Reset Level 12.5 olts Fault Output Current** I FO(H) D = 15, FO = ma I FO(L) D = 15, FO = 15 5 ma Fault Output ulse Width** t FO D = ms *-20 C T j 125 C, D = 15, Inductive Load per 1 Arm **Fault output is given only when the internal SC, and protections schemes of either upper or lower devide operate to protect it. Fault output of SC protection given pulse. Fault output of, protection given pulse while over trip level. Thermal Characteristics, unless otherwise specified Characteristic Symbol Condition Min. Typ. Max. nits Junction to Case Thermal Resistance R th(j-c)q Inverter IGBT (er 1 Element) (ote 1) 0.32 C/Watt R th(j-c)d Inverter FWDi (er 1 Element) (ote 1) 0.53 C/Watt Contact Thermal Resistance R th(c-f) Case to Fin (er 1 Element), C/Watt Thermal Grease Applied Recommended Conditions for se Characteristic Symbol Condition alue nits Supply oltage CC Applied across - Terminals 400 olts Control Supply oltage D Applied between 1 - C, 15.0 ± 1.5 olts 1 - C, 1 - C Input O oltage C(on) Applied between - C, 0.8 olts Input OFF oltage C(off) - C, - - C 9.0 olts WM Input Frequency f WM sing Application Circuit 30 khz Arm Shoot-through Blocking Time t DEAD sing Application Circuit of IM's 2.0 µs Input Signal of Each Arm 4
5 M75B4LA060 / M75B4LB060 hoto oltaic IM 75 Amperes/600 olts 100 T CHARACTERISTICS (TICAL - ERTER ART) 2.0 COLLECTOR-EMITTER SATRATIO OLTAGE CHARACTERISTICS (TICAL - ERTER ART) COLLECTOR-EMITTER SATRATIO OLTAGE S. SL OLTAGE CHARACTERISTICS (TICAL - ERTER ART) D = COLLECTOR-EMITTER OLTAGE, CE, (OLTS) COLLECTOR-EMITTER SATRATIO OLTAGE, CE(sat), (OLTS) D = COLLECTOR-CRRET, I C, (AMERES) COLLECTOR-EMITTER SATRATIO OLTAGE, CE(sat), (OLTS) I C = 75A T j = 25 o C SL OLTAGE, D, (OLTS) COLLECTOR CRRET, -I C, (AMERES) 10 2 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TICAL - ERTER ART) D = EMITTER-COLLECTOR OLTAGE, EC, (OLTS) REERSE RECOER CRRET, I rr, (AMERES) 10 2 REERSE RECOER CHARACTERISTICS (TICAL - ERTER ART) CC = 300 D = 15 DCTIE LOAD COLLECTOR CRRET, -I C, (AMERES) REERSE RECOER TIME, t rr, (µs) REERSE RECOER CHARACTERISTICS (TICAL - ERTER ART) CC = 300 D = 15 DCTIE LOAD COLLECTOR CRRET, -I C, (AMERES) SWITCHG LOSS, E SW(on), (mj/lse) SWITCHG LOSS (O) S. COLLECTOR CRRET (TICAL - ERTER ART) CC = 300 D = 15 DCTIE LOAD SWITCHG LOSS, E SW(off), (mj/lse) SWITCHG LOSS (OFF) S. COLLECTOR CRRET (TICAL - ERTER ART) CC = 300 D = 15 DCTIE LOAD SWITCHG TIMES, t on, (µs) SWITCHG TIME S. COLLECTOR CRRET (TICAL - ERTER ART) CC = 300 D = 15 DCTIE LOAD
6 M75B4LA060 / M75B4LB060 hoto oltaic IM 75 Amperes/600 olts CC = 300 SWITCHG TIME S. COLLECTOR CRRET (TICAL - ERTER ART) SWITCHG TIME S. COLLECTOR CRRET (TICAL - ERTER ART) SWITCHG TIME S. COLLECTOR CRRET (TICAL - ERTER ART) SWITCHG TIMES, t off, (µs) D = 15 DCTIE LOAD 10 2 SWITCHG TIMES, t c(on), (µs) CC = 300 D = 15 DCTIE LOAD 10 2 SWITCHG TIMES, t c(off), (µs) CC = 300 D = 15 DCTIE LOAD 10 2 REERSE RECOER EERG, E rr, (mj/lse) REERSE RECOER LOSS CHARACTERISTICS (TICAL - ERTER ART) CC = 300 D = 15 DCTIE LOAD 10 2 FORWARD CRRET, I F, (AMERES) ORMALIZED TRASIET THERMAL IMEDACE, Z th(j-c') Z th = R th (ORMALIZED ALE) TRASIET THERMAL IMEDACE CHARACTERISTICS (IGBT & FWDi - ERTER ART) Single ulse T C = 25 C er nit Base = R th(j-c) = 0.32 C/W (IGBT) R th(j-c) = 0.53 C/W (FWDi) TIME, (s) ote 1: T C (under the chip) Measurement oint ackage A ackage B BTOM IEW BTOM IEW 6
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