C N V (4TYP) U (5TYP) Dimensions Inches Millimeters L 0.69± ±0.25 M N P Q

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1 QID3322 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) Dual IGBT HVIGBT Module 2 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E M H 4 V (4TYP) G (3TYP) R (DEEP) T (SCREWING DEPTH) 4 6 K (3TYP) 1 2 L (2TYP) U (TYP) Q P Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. 8 7 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A B C D 4.88± ±.2 E 2.24±.1 7.±.2 3 Dimensions Inches Millimeters L.69±.1 17.±.2 M N.2. P.22. Q Features: Advanced Mitsubishi R-Series Chip Technology Low V CE(sat) Creepage and Clearance meet IEC High Isolation Voltage Rugged SWSOA and RRSOA Compact Industry Standard Package F G H J.2. K R S M6 Metric M6 T.63 Min. 16. Min. U.11 x x. V.28 Dia. 7. Dia. Applications: Medium Voltage Drives High Voltage Power Supplies 1/13 Rev. 8 1

2 QID Amperes/33 Volts Absolute Maximum Ratings, T j = 2 C unless otherwise specified Ratings Symbol QID3322 Units Junction Temperature T j -4 to 1 C Storage Temperature T stg -4 to 12 C Collector-Emitter Voltage (V GE = V) V CES 33 Volts Gate-Emitter Voltage (V CE = V) V GES ±2 Volts Collector Current (T C = 12 C) I C 2 Amperes Collector Current (T C = 2 C) I C 37 Amperes Peak Collector Current (Pulse) I CM 4* Amperes Diode Forward Current** (T C = 99 C) I F 2 Amperes Diode Forward Surge Current** (Pulse) I FM 4* Amperes I 2 t for Diode (t = 1ms, V R = V, T j = 12 C) I 2 t 1 ka 2 sec Maximum Collector Dissipation (T C = 2 C, IGBT Part, T j(max) 1 C) P C 178 Watts Mounting Torque, M6 Terminal Screws 44 in-lb Mounting Torque, M6 Mounting Screws 44 in-lb Module Weight (Typical) 9 Grams Isolation Voltage (Charged Part to Baseplate, AC 6Hz 1 min.) V iso 7.7 kvolts Partial Discharge Q pd 1 pc (V1 = 48 V RMS, V2 = 3 V RMS, f = 6Hz (Acc. to IEC 1287)) Maximum Short-Circuit Pulse Width, t psc 1 µs (V CC 2V, V CE V CES, V GE = 1V, T j = 12 C) Electrical Characteristics, T j = 2 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES V CE = V CES, V GE = V 2. ma Gate Leakage Current I GES V GE = V GES, V CE = V. µa Gate-Emitter Threshold Voltage V GE(th) I C = 1mA, V CE = 1V Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 2A, V GE = 1V, 2.7*** 3.3 Volts I C = 2A, V GE = 1V, T j = 12 C Volts I C = 2A, V GE = 1V, T j = 1 C 3.6 Volts Total Gate Charge Q G V CC = 18V, I C = 17A, V GE = 1V 1.8 µc Emitter-Collector Voltage** V EC I E = 2A, V GE = V, Volts I E = 2A, V GE = V, T j = 12 C 2.4 Volts I E = 2A, V GE = V, T j = 1 C 2. Volts * Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *** Pulse width and repetition rate should be such that device junction temperature rise is negligible. 2 1/13 Rev. 8

3 QID Amperes/33 Volts Electrical Characteristics, T j = 2 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies 23 nf Output Capacitance C oes V GE = V, V CE = 1V 1. nf Reverse Transfer Capacitance C res.7 nf Turn-on Delay Time t d(on) V CC = 16V, I C = 2A, 8 ns Rise Time t r V GE = +1V/-8V, 16 ns Turn-off Delay Time t d(off) R G(on) = 1Ω, R G(off) = Ω, 32 ns Fall Time t f L S = 12nH, Inductive Load 13 ns Turn-on Switching Energy E on T j = 12 C, I C = 2A, V GE = +1V/-8V, 33 mj/p Turn-off Switching Energy E off R G(on) = 1Ω, R G(off) = Ω, 27 mj/p V CC = 16V, L S = 12nH, Inductive Load Diode Reverse Recovery Time** t rr V CC = 16V, I E = 2A, ns Diode Reverse Recovery Charge** Q rr V GE = +1V/-8V, R G(on) = 1Ω, 18* µc Diode Reverse Recovery Energy E rec L S = 12nH, Inductive Load, T j = 12 C 19 mj/p Stray Inductance (C1-E2) L SCE 6 nh Lead Resistance Terminal-Chip R CE.8 mω Thermal and Mechanical Characteristics, T j = 2 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case*** R th(j-c) Q Per IGBT.74 C/W Thermal Resistance, Junction to Case*** R th(j-c) D Per FWDi.11 C/W Contact Thermal Resistance, Case to Fin R th(c-f) Per Module,.18 C/W Thermal Grease Applied, λ grease = 1W/mK Comparative Tracking Index CTI 6 Clearance Distance in Air (Terminal to Base) d a(t-b) 3. mm Creepage Distance Along Surface d s(t-b) 64 mm (Terminal to Base) Clearance Distance in Air d a(t-t) 19 mm (Terminal to Terminal) Creepage Distance Along Surface d s(t-t) 4 mm (Terminal to Terminal) *Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***T C measurement point is just under the chips. 1/13 Rev. 8 3

4 QID Amperes/33 Volts OUTPUT CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS 3 3 COLLECTOR CURRENT, I C, (AMPERES) T j = 1 C V GE = 19V COLLECTOR-CURRENT, I C, (AMPERES) V GE = 1V T j = 1 C COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) TRANSFER CHARACTERISTICS FREE-WHEEL DIODE FORWARD CHARACTERISTICS 3 3 COLLECTOR-CURRENT, I C, (AMPERES) V CE = V GE T j = 1 C EMITTER CURRENT, I E, (AMPERES) T j = 1 C GATE-EMITTER VOLTAGE, V GE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) 4 1/13 Rev. 8

5 QID Amperes/33 Volts CAPACITANCE, C ies, C oes, C res, (nf) V GE = V f = 1 khz CAPACITANCE VS. V CE C ies C oes C res COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) GATE CHARGE, QG, (μc) GATE-EMITTER VOLTAGE, V GE, (VOLTS) V CE = 18V I C = 17A GATE CHARGE VS. V GE SWITCHING ENERGIES, E on, E off, E rec, (mj/pulse) SWITCHING ENERGY CHARACTERISTICS V CC = 18V V GE = +1V/-8V R G(on) = 1Ω R G(off) = Ω L s = 1nH T j = 12 C Inductive Load E on E off E rec COLLECTOR CURRENT, I C, (AMPERES) SWITCHING ENERGIES, E on, E off, E rec, (mj/pulse) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS V CC = 18V V GE = +1V/-8V R G(on) = 1Ω R G(off) = Ω L s = 1nH T j = 1 C Inductive Load E on E off E rec COLLECTOR CURRENT, I C, (AMPERES) 1/13 Rev. 8

6 QID Amperes/33 Volts REVERSE BIAS SAFE OPERATING AREA FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA COLLECTOR CURRENT, I C, (AMPERES) V CC 2V V GE = +1V/-8V R G(off) = Ω T j = 1 C COLLECTOR EMITTER VOLTAGE, V CES, (VOLTS) 4 REVERSE RECOVERY CURRENT, I rr, (AMPERES) V CC 2V di/dt = 1kA/µs T j = 1 C EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) 4 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) Single Pulse T C = 2 C Per Unit Base = R th(j-c) =.74 C/W (IGBT) R th(j-c) =.11 C/W (FWDi) TIME, (s) 6 1/13 Rev. 8