L K K K K P P1 N GU EU GV EV GW EW GU GVGW GB E LABEL H H

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1 Three Phase Converter + Three Phase Inverter + Brake A ( PLACES) G J L L L P P1 N GU EU GV EV GW EW GU GVGW GB E Q C R D LABEL D U B R S T S V 3 MAIN TERMINAL X P P1 Outline Drawing and Circuit Diagram N Q "T" TIC CONTROL TERMINAL B F GU GV GW EU Dimensions Inches Millimeters A B C D E F. 5. G J L M.19.8 W N Y R S T B U V W GB GU GV GW P EV U V W E P EW Dimensions Inches Millimeters N P Q R S.8 2. T.2.5 U V. 1. W.3.8 X Y Z. 5. Z E Description: Powerex s are designed for use in switching applications. Each module consists of a three phase diode converter section, a three phase IGBT inverter section and a brake section. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low V CE(sat) Discrete Super-Fast Recovery (7ns) Free-Wheel Diodes igh Frequency Operation (-25 kz) Isolated Baseplate for Easy eat Sinking Applications: AC Motor Control Motion/Servo Control General Purpose Inverters Robotics Ordering Information: Example: Select the complete nine digit module part number you desire from the table below - i.e. is a 6V (V CES ), 15 Ampere CIB Power Module. Current Rating VCES Type Amperes Volts (x 5) CM

2 Absolute Maximum Ratings, unless otherwise specified Characteristics Symbol Units Power Device Junction Temperature T j - to 15 C Storage Temperature T stg - to 125 C Mounting Torque, M Mounting Screws 13 in-lb Module Weight (Typical) 6 Grams Isolation Voltage, AC 1 minute, 6z V RMS 25 Volts Converter Part Repetitive Peak Reverse Voltage V RRM 8 Volts Recommended AC Input Voltage E a 2 Volts DC Output Current I O 15 Amperes Surge (Non-repetitive) Forward Current I FSM 15 Amperes I 2 t for Fusing I 2 t 93 A 2 s IGBT Inverter Part Collector-Emitter Voltage (G-E Short) V CES 6 Volts Gate-Emitter Voltage (C-E Short) V GES ± Volts Collector Current I C 15 Amperes Collector Current (Pulse)* I CM 3 Amperes Emitter Current** I E 15 Amperes Emitter Current** (Pulse)* I EM 3 Amperes Maximum Collector Dissipation P C 5 Watts Brake Part Collector-Emitter Voltage (G-E Short) V CES 6 Volts Gate-Emitter Voltage (C-E Short) V GES ± Volts Collector Current I C 15 Amperes Collector Current (Pulse)* I CM 3 Amperes Collector Dissipation P C 5 Watts Repetitive Peak Reverse Voltage (Clamp Diode Part) V RRM 6 Volts Forward Current (Clamp Diode Part) I FM 15 Amperes * Pulse width and repetition rate should be such that device junction temperature does not exceed maximum rating. ** Characteristics of the anti-parallel emitter-collector free-wheel diode. 2

3 Electrical and Mechanical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Converter Sector Repetitive Reverse Current I RRM V R = V RRM, T j = 15 C 8 ma Forward Voltage Drop V FM I F = 15A 1.5 Volts Thermal Resistance (Junction-to-Fin) R th(j-f) Per Diode 3.6 C/W Brake Sector Collector-Emitter Saturation Voltage V CE(sat) V GE = 15V, I C = 15A, Volts V GE = 15V, I C = 15A, T j = 15 C 2.15 Volts Collector Cutoff Current I CES V CE = V CES, V GE = V, 1 ma Gate-Emitter Threshold Voltage V GE(th) I C = 1.5mA, V CE = V Volts Gate-Emitter Cutoff Current I GES V GE = V GES, V CE = V.5 µa Input Capacitance C ies 1.5 nf Output Capacitance C oes V GE = V, V CE = V 1.2 nf Reverse Transfer Capacitance C res.3 nf Total Gate Charge Q G V CC = 3V, I C = 15A, V GE = 15V 5 nc Forward Voltage Drop V FM I F = 15A 1.5 Volts Thermal Resistance (Junction-to-Fin) R th(j-f) Per IGBT 2.8 C/W Per Clamp Diode 3.6 C/W 3

4 Electrical and Mechanical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector Cutoff Current I CES V CE = V CES, V GE = V 1 ma Gate-Emitter Threshold Voltage V GE(th) V CE = V, I C = 1mA Volts Gate-Emitter Cutoff Current I GES V GE = V GES, V CE = V.5 µa Collector-Emitter Saturation Voltage V CE(sat) V GE = 15V, I C = 15A, Volts V GE = 15V, I C = 15A, T j = 15 C 2.15 Volts Input Capacitance C ies 1.5 nf Output Capacitance C oes V GE = V, V CE = V 1.2 nf Reverse Transfer Capacitance C res.3 nf Total Gate Charge Q G V CC = 3V, I C = 15A, V GE = 15V 5 nc Resistive Turn-on Delay Time t d(on) V GE1 = V GE2 = 15V, 1 ns Load Rise Time t r V CC = 3V, I C = 15A, 3 ns Switching Turn-off Delay Time t d(off) R g = 2Ω, ns Times Fall Time t f Resistive Load 3 ns Emitter-Collector Voltage V EC I E = 15A, V GE = V 2.8 Volts Reverse Recovery Time t rr I E = 15A, V GE = V, 1 ns Reverse Recovery Charge Q rr di E /dt = -3A/µs. µc Thermal Resistance (Junction-to-Fin) R th(j-f) Per IGBT 2.8 C/W Per FWDi 3.5 C/W

5 OUTPUT CARACTERISTICS TRANSFER CARACTERISTICS SATURATION VOLTAGE CARACTERISTICS COLLECTOR CURRENT, I C, (AMPERES) 3 T j = 25 o C V GE = V COLLECTOR CURRENT, I C, (AMPERES) 3 V CE = V T j = 125 C SATURATION VOLTAGE, V CE(sat), (VOLTS) V GE = 15V T j = 125 C VOLTAGE, V CE, (VOLTS) GATE-EMITTER VOLTAGE, V GE, (VOLTS) COLLECTOR-CURRENT, I C, (AMPERES) 3 SATURATION VOLTAGE CARACTERISTICS 2 FREE-WEEL DIODE FORWARD CARACTERISTICS 1 CAPACITANCE VS. V CE SATURATION VOLTAGE, V CE(sat), (VOLTS) 8 I C = 3A 6 I C = 15A 2 I C = 6A GATE-EMITTER VOLTAGE, V GE, (VOLTS) EMITTER CURRENT, I E, (AMPERES) EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) CAPACITANCE, C ies, C oes, C res, (nf) -1 C ies C oes -2 C res V GE = V f = 1Mz VOLTAGE, V CE, (VOLTS) SWITCING TIME, (ns) 3 2 ALF-BRIDGE SWITCING CARACTERISTICS t f t d(off) t d(on) V CC = 3V t V GE = ±15V r R G = 2Ω T j = 125 C COLLECTOR CURRENT, I C, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) 3 2 REVERSE RECOVERY CARACTERISTICS 1 di/dt = -3A/µsec I rr t rr EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY CURRENT, I rr, (AMPERES) GATE-EMITTER VOLTAGE, V GE, (VOLTS) GATE CARGE, V GE V CC = V V CC = 3V GATE CARGE, Q G, (nc) 5

6 NORMALIZED TRANSIENT TERMAL IMPEDANCE, Z th(j-f) TRANSIENT TERMAL IMPEDANCE CARACTERISTICS (IGBT) Single Pulse T C = 25 C Per Unit Base = R th(j-f) = 2.8 C/W -3-3 Z -5 th = R th (NORMALIZED VALUE) - -3 TIME, (s) -1-2 NORMALIZED TRANSIENT TERMAL IMPEDANCE, Z th(j-f) TRANSIENT TERMAL IMPEDANCE CARACTERISTICS (FWDi) Single Pulse T C = 25 C Per Unit Base = R th(j-f) = 3.5 C/W -3-3 Z -5 th = R th (NORMALIZED VALUE) - -3 TIME, (s)

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