CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

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1 M6HG-1H rd-ersion M6HG-1H I...6 A S... 6 High Insulated Type 1-element in a Pack AISi Baseplate APPLIATION Traction drives, High Reliability onverters / Inverters, D choppers OUTLIN DRAWING & IRUIT DIAGRAM Dimensions in mm ±. 19 ±. ±. ±. -M8 NUTS ±.1 (6) (4) () 1 44 ±. 14 ±. 14 ±. G 9 ±.1 () () (1) -M4 NUTS 14 ±. G 9. ±. 8-φ MOUNTING HOLS IRUIT DIAGRAM screwing depth min ±. 1 ±. 61. ±. screwing depth min ±. 41 ±. ±. ± LABL 4.4 ±. May 9 1

2 M6HG-1H rd-ersion MAXIMUM RATINGS Symbol Item onditions Ratings Unit S GS I IM I IM Pc iso e Tj Top Tstg tpsc ollector-emitter voltage Gate-emitter voltage ollector current mitter current (Note ) Maximum power dissipation (Note ) Isolation voltage Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width Tj = 4 G = Tj = + Tj = +1 =, Tj = D, Tc = 8 Pulse (Note 1) D Pulse (Note 1) Tc =, IGBT part RMS, sinusoidal, f = 6Hz, t = 1 min. RMS, sinusoidal, f = 6Hz, QPD 1 p = 4, S, G = 1, Tj = ± ~ +1 4 ~ +1 4 ~ +1 1 A A A A W LTRIAL HARATRISTIS Symbol Item onditions Min Limits Typ Max Unit IS G(th) IGS ies oes res Qg (sat) td(on) tr on(1%) td(off) tf tf off(1%) trr trr Qrr rec(1%) ollector cutoff current Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge ollector-emitter saturation voltage Turn-on delay time Turn-on rise time Turn-on switching energy (Note ) Turn-off delay time Turn-off fall time Turn-off fall time Turn-off switching energy (Note ) mitter-collector voltage (Note ) Reverse recovery time (Note ) Reverse recovery time (Note ) Reverse recovery charge (Note ) Reverse recovery energy (Note ), (Note ) = S, G = = 1, I = 6 ma, Tj = G = GS, =, Tj = = 1, G =, f = 1 khz, Tj = Tj = Tj = 1 = 6, I = 6 A, G = ±1, Tj = I = 6 A (Note 4) Tj = G = 1 Tj = 1 = 6, I = 6 A, G = ±1 RG(on) = 1 Ω, Tj = 1, Ls = 1 nh t(igbt_off) = 6 (Note 6), Inductive load = 6, I = 6 A, G = ±1 RG(off) = Ω, Tj = 1, Ls = 1 nh Inductive load I = 6 A (Note 4) G = = 6, I = 6 A, G = ±1 RG(on) = 1 Ω, Tj = 1, Ls = 1 nh t(igbt_off) = 6 (Note 6), Inductive load Tj = Tj = ma µa nf nf nf µ J/P J/P µ J/P May 9

3 M6HG-1H rd-ersion THRMAL HARATRISTIS Symbol Item onditions Min Limits Typ Max Unit Rth(j-c)Q Rth(j-c)R Rth(c-f) Thermal resistance Thermal resistance ontact thermal resistance Junction to ase, IGBT part Junction to ase, FWDi part ase to Fin, λgrease = 1W/m K, D(c-f) = 1 µm K/kW K/kW K/kW MHANIAL HARATRISTIS Symbol Item onditions Min Limits Typ Max Unit Mt Ms Mt m TI da ds LP R + Mounting torque Mass omparative tracking index learance reepage distance Internal inductance Internal lead resistance M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw Tc = N m N m N m kg mm mm nh mω Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (1 ).. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).. Junction temperature (Tj) should not exceed Tjmax rating (1 ). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise.. on(1%) / off(1%) / rec(1%) are the integral of.1 x.1i x dt. 6. t(igbt_off) definition is shown as follows. Ic time t(igbt_off) May 9

4 rd-ersion M6HG-1H 1%G G 9%G I 9%I 1%I 1% 1% td(on) ton tr di dt 9%I %I 1%I td(off) tf t t4 on = ic vce dt off = ic vce dt t1 t t1 t t t4 tf = (.9ic.1ic)/(di/dt) toff = td(off)+tf Fig. 1 Definitions of switching times & energies of IGBT part I(IF) di di/dt trr 1%I (R) Qrr = rec = t6 ie dt t6 ie vec dt t Irr dt 1% trr t t6 Fig. Definitions of reverse recovery charge & energy of FWDi part May 9 4

5 rd-ersion M6HG-1H PRFORMAN URS 1 Tj = 1 OUTPUT HARATRISTIS 1 TRANSFR HARATRISTIS = 1 G = G = 1 G = 1 G = 1 G = OLLTOR-MITTR OLTAG () Tj = Tj = GAT-MITTR OLTAG () 1 OLLTOR-MITTR SATURATION OLTAG HARATRISTIS G = 1 1 FR-WHL DIOD FORWARD HARATRISTIS MITTR URRNT (A) Tj = Tj = Tj = Tj = OLLTOR-MITTR SATURATION OLTAG () MITTR-OLLTOR OLTAG () May 9

6 rd-ersion M6HG-1H APAITAN (nf) APAITAN HARATRISTIS G =, Tj = f = 1kHz ies oes res GAT-MITTR OLTAG () GAT HARG HARATRISTIS = 6, I = 6A Tj = 1 1 OLLTOR-MITTR OLTAG () GAT HARG (µ) SWITHING NRGIS (J/P) HALF-BRIDG SWITHING NRGY HARATRISTIS = 6, G = ±1 RG(on) = 1Ω, RG(off) = Ω Tj = 1, Inductive load on off rec SWITHING NRGIS (J/P) HALF-BRIDG SWITHING NRGY HARATRISTIS = 6, I = 6A G = ±1, Tj = 1 Inductive load on rec off GAT RSISTOR (Ω) May 9 6

7 rd-ersion M6HG-1H SWITHING TIMS () HALF-BRIDG SWITHING TIM HARATRISTIS = 6, G = ±1 RG(on) = 1Ω, RG(off) = Ω Tj = 1, Inductive load tf td(off) td(on) tr RRS RORY TIM () FR-WHL DIOD RRS RORY HARATRISTIS = 6, G = ±1 RG(on) = 1Ω, RG(off) = Ω Tj = 1, Inductive load lrr trr RRS RORY URRNT (A) MITTR URRNT (A) NORMALIZD TRANSINT THRMAL IMPDAN TRANSINT THRMAL IMPDAN HARATRISTIS Rth(j c)q = 14K/kW Rth(j c)r = K/kW Z th( j c ) ( t ) = Σ n Ri [K/kW] τi [sec] i=1 Ri 1 exp ti t TIM (s) May 9

8 rd-ersion M6HG-1H 1 RRS BIAS SAF OPRATING ARA (RBSOA) 4, G = ±1 Tj = 1, RG(off) Ω 1 SHORT IRUIT SAF OPRATING ARA (SSOA) 4, G = ±1 Tj = 1, RG(off) Ω OLLTOR-MITTR OLTAG () OLLTOR-MITTR OLTAG () 1 FR-WHL DIOD RRS RORY SAF OPRATING ARA (RRSOA) 4, di/dt A/ Tj = 1 RRS RORY URRNT (A) OLLTOR-MITTR OLTAG () May 9 8