1200 V 600 A IGBT Module

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1 1200 V 600 A IGBT RoHS Features Trench-gate field stop IGBT technology Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense included max = 175 C Agency Approvals Applications AGENCY AGENCY FILE NUMBER E71639 Industrial and servo drives Solar inverters High-power converters UPS Welding RoHS compliant Characteristics (T C Symbol Parameters Test Conditions Values Unit max Max. Junction Temperature 175 C op Operating Temperature -40~150 C T stg Storage Temperature -40~125 C V isol Isolation Breakdown Voltage AC, 50 Hz(R.M.S), t = 1 minute 3000 V Torque to heatsink Recommended (M5) 2.5~5 N m lolerminal Recommended (M6) 3~5 N m Weight 350 g Absolute Maximum Ratings (T C Symbol Parameters Test Conditions Values Unit IGBT S Collector Emitter Voltage = 25 C 1200 V V GES Gate Emitter Voltage ±20 V T DC Collector Current C = 25 C 750 A T C = 80 C 600 A M Repetitive Peak Collector Current t p = 1 ms 1200 A P tot Power Dissipation Per IGBT 2500 W Diode V RRM Repetitive Reverse Voltage = 25 C 1200 V (AV) Average Forward Current T C = 25 C 600 A RM Repetitive Peak Forward Current t p = 1ms 1200 A I 2 t = 125 C, t = 10 ms, V R = 0 V 45 KA 2 s 331 1

2 1200 V 600 A IGBT Electrical and Thermal Specifications (T C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V GE(th) Gate Emitter Threshold Voltage = V GE, = 24 ma V (sat) ES Collector Emitter Saturation Voltage chip terminal Collector Leakage Current = 15 V, = 25 C = 15 V, = 125 C 1.9 = 15 V, = 25 C = 15 V, = 125 C 2.4 = 1200 V, V GE = 0 V, = 25 C 100 μa = 1200 V, V GE = 0 V, = 125 C 1 ma I GES Gate Leakage Current = 0 V, V GE = ±15 V, = 125 C na R Gint Integrated Gate Resistor 0.5 Ω Q g Gate Charge, = 600 A, V GE = ±15 V 3.4 μc C ies Input Capacitance 60.5 nf = 25 V, V GE = 0 V, f = 1 MHz C res Reverse Transfer Capacitance 1.8 nf t d(on) t r t d(off) t f E on E off I SC Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Energy Turn-off Energy Short Circuit Current V CC = 600 A R G = 5 Ω V GE = ±15 V Inductive Load t psc 10 μs, V GE = 15 V; = 125 C, V CC = 25 C 250 ns = 125 C 280 ns = 25 C 220 ns = 125 C 240 ns = 25 C 1000 ns = 125 C 1100 ns = 25 C 170 ns = 125 C 190 ns = 25 C 20 mj = 125 C 35 mj = 25 C 105 mj = 125 C 120 mj V V 2400 A R thjc Junction-to-Case Thermal Resistance (Per IGBT) 0.06 K/W Diode V F Forward Voltage chip = 0 V, = 25 C V = 0 V, = 125 C 2.2 V t RR Reverse Recovery Time 330 ns I = 600 A, V R RRM Max. Reverse Recovery Current 305 A di F /dt = A/µs Q RR Reverse Recovery Charge = 125 C 96 μc E rec Reverse Recovery Energy 42 mj R thjcd Junction-to-Case Thermal Resistance (Per Diode) 0.1 K/W NTC Characteristics (T C Symbol Parameters Test Conditions Min Typ Max Unit R 25 Resistance T c = 25 C 5 KΩ B 25/50 R 2 = R 25 exp [B 25/50 (1/T 2-1/((298, 15 K))] 3375 K 332 2

3 1200 V 600 A IGBT Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics = 125 C Figure 3: Typical Transfer Characteristics Figure 4: Switching Energy vs. Gate Resistor Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area 3 333

4 1200 V 600 A IGBT Figure 7: Collector Current vs Case temperature IGBT -inverter Figure 8: Forward current vs Case temperature Figure 9: Diode Forward Characteristics Figure 10: Switching Energy vs Gate Resistor Figure 11: Switching Energy vs Forward Current Diode-inverter Figure 12: Transient Thermallmpedance of Diode and IGBT -inverter 334 4

5 1200 V 600 A IGBT Figure 13: NTC Characteristics Circuit Diagram R ( ) R T C C Dimensions-Package WB The foot pins are in gold / nickel coating Packing Options Part Number Marking Weight Packing Mode M.O.Q 350 g Bulk Pack 60 Part Numbering System Part Marking System MG12600 WB - B R2 MM PRODUCT TYPE M: Power MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200 V CURRENT RATING 600: 600 A ASSEMBLY SITE WAFER TYPE CIRCUIT TYPE 2x(IGBT+FWD) PACKAGE TYPE LOT NUMBER Space reserved for QR code 335 5

Symbol Parameter/Test Conditions Values Unit T C = T C =80 100

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