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1 M6HA-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania (72) Single IGBT A-Series Module 6 Amperes/12 Volts H G F D K J W - DIA. ( TYP.) AF A AG Y X Y Z G AA K B A V -THD. (2 TYP.) T A G Outline Drawing and ircuit Diagram Dimensions Inches Millimeters A B 3.66±.1 93.± D F G H.9 2. J K.2 6. L M 1.89±.1 8.±.25 N P Q R S 1.2+./ /-.5 P Q M L N AB AF D AH AJ R U - THD. (2 TYP.) AD S Dimensions Inches Millimeters T 1.2+./ /-.5 U M6 Metric M6 V M Metric M W.256 Dia. 6.5 Dia. X Y Z AA AB A AD A AF.25. AG AH AJ Description: Powerex IGBT Modules are designed for use in switching applications. ach module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low V (sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for asy Heat Sinking Applications: D hopper Inverter UPS Forklift Ordering Information: xample: Select the complete part module number you desire from the table below -i.e. M6HA-2A is a 12V (V S ), 6 Ampere Single IGBT Power Module. Type urrent Rating V S Amperes Volts (x 5) M 6 2 6/13 Rev. 2 1

2 M6HA-2A 6 Amperes/12 Volts Maximum Ratings, unless otherwise specified haracteristics Symbol Rating Units ollector-mitter Voltage (V G = V) V S 12 Volts Gate-mitter Voltage (V = V) V GS ±2 Volts ollector urrent (D, T = 8 ) *2,* I 6 Amperes ollector urrent (Pulse, Repetitive) *3 I RM 12 Amperes Total Power Dissipation (T = 25 ) *2,* P tot 367 Watts mitter urrent *2 I *1 6 Amperes mitter urrent (Pulse, Repetitive) *3 I *1 RM 12 Amperes Isolation Voltage (harged Part to Baseplate, RMS, f = 6Hz, A 1 minute) V ISO 25 Volts Junction Temperature T j - ~ +15 Storage Temperature T stg - ~ +125 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 The device junction temperature is T j(max) rating (15 ) or less. *3 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. * ase temperature (T ) is measured on the surface of the baseplate just under the chip. Refer to the figure to the right for chip location LABL SID ach mark points to the center position of each chip. Tr1: IGBT Di1: FWDi 2 6/13 Rev. 2

3 M6HA-2A 6 Amperes/12 Volts lectrical haracteristics, unless otherwise specified haracteristics Symbol Test onditions Min. Typ. Max. Units ollector-mitter utoff urrent I S V = V S, V G = V 1. ma Gate-mitter Leakage urrent I GS V G = V GS, V = V 1.5 µa Gate-mitter Threshold Voltage V G(th) I = 6mA, V = 1V Volts ollector-mitter Saturation Voltage V (sat) I = 6A,, * Volts I = 6A,, *5 2. Volts Forward Transfer Admittance γ fs I = 6A, V = 1V* 5 18 S Input apacitance ies 15 nf Output apacitance oes V = 1V, V G = V 9. nf Reverse Transfer apacitance res 2. nf Gate harge Q G V = 6V, I = 6A, 3 n Turn-on Delay Time t d(on) 66 ns Rise Time t r V = 6V, I = 6A, V G = ±15V, 19 ns Turn-off Delay Time t d(off) R G =.52Ω, 7 ns Fall Time t f 35 ns mitter-ollector Voltage V *1 I = 6A, V G = V * Volts Reverse Recovery Time t rr *1 V = 6V, I = 6A, V G = ±15V 25 ns Reverse Recovery harge Q rr *1 R G =.52Ω, 19 µ Internal Gate Resistance r g T = Ω xternal Gate Resistance R G Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 6/13 Rev. 2 3

4 M6HA-2A 6 Amperes/12 Volts Thermal Resistance haracteristics haracteristics Symbol Test onditions Min. Typ. Max. Units Thermal Resistance, Junction to ase R th(j-c) Q IGBT Part * 3 K/kW Thermal Resistance, Junction to ase R th(j-c) D FWDi Part * 53 K/kW ontact Thermal Resistance, R th(c-f) Thermal Grease Applied, 15 K/kW ase to Heatsink Per 1 Module *,*7 Mechanical haracteristics Mounting Torque M t Main Terminal, M6 Screw in-lb Mounting Torque M t G/ Auxiliary Terminals in-lb Mounting Torque M s Mounting to Heatsink, M6 Screw in-lb Weight m 8 g Flatness of Baseplate e c On enterline X, Y *6 ± +1 µm * ase temperature (T ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. *7 Typical value is measured by using thermally conductive grease of λ =.9 [W/(m K)] ONVX ONAV Y BOTTOM X 3 mm LABL SID HATSINK SID HATSINK SID ONAV + ONVX ach mark points to the center position of each chip. Tr1: IGBT Di1: FWDi 6/13 Rev. 2

5 M6HA-2A 6 Amperes/12 Volts OLLTOR URRNT, I, (AMPRS) V G = 2V OUTPUT HARATRISTIS OLLTOR-MITTR VOLTAG, V, (VOLTS) OLLTOR-MITTR SATURATION VOLTAG, V (sat), (VOLTS) OLLTOR-MITTR SATURATION VOLTAG HARATRISTIS OLLTOR-URRNT, I, (AMPRS) 12 OLLTOR-MITTR SATURATION VOLTAG HARATRISTIS FR-WHL DIOD FORWARD HARATRISTIS 1 1 OLLTOR-MITTR SATURATION VOLTAG, V (sat), (VOLTS) I = 2A I = 12A I = 6A MITTR URRNT, I, (AMPRS) GAT-MITTR VOLTAG, V G, (VOLTS) MITTR-OLLTOR VOLTAG, V, (VOLTS) 6/13 Rev. 2 5

6 M6HA-2A 6 Amperes/12 Volts APAITAN VS. V HALF-BRIDG SWITHING HARATRISTIS t d(off) APAITAN, ies, oes, res, (nf) V G = V ies oes res OLLTOR-MITTR VOLTAG, V, (VOLTS) OLLTOR URRNT, I, (AMPRS) SWITHING TIM, (ns) 1 2 t f t d(on) t r V = 6V R G =.52Ω 1 3 RVRS ROVRY HARATRISTIS GAT HARG VS. V G RVRS ROVRY, I rr, t rr, (ns) V = 6V R G =.52Ω I rr t rr GAT-MITTR VOLTAG, V G, (VOLTS) I = 6A V = V V = 6V MITTR URRNT, I, (AMPRS) GAT HARG, Q G, (n) 6 6/13 Rev. 2

7 M6HA-2A 6 Amperes/12 Volts SWITHING LOSS, (mj/puls) SWITHING LOSS VS. OLLTOR URRNT on V = 6V R G =.52Ω SWITHING LOSS, (mj/puls) SWITHING LOSS VS. GAT RSISTAN V = 6V I = 6A off rr on off rr NORMALIZD TRANSINT THRMAL IMPDAN, Z th(j-c') Z th = R th (NORMALIZD VALU) TRANSINT THRMAL IMPDAN HARATRISTIS (IGBT & FWDi) OLLTOR URRNT, I, (AMPRS) MITTR URRNT, I, (AMPRS) Single Pulse T = 25 Per Unit Base = R th(j-c) =.3 /W (IGBT) R th(j-c) =.51 /W (FWDi) TIM, (s) GAT RSISTAN, R G, (Ω) 6/13 Rev. 2 7