PM150CBS060 Intellimod Module MAXISS Series Multi AXIS Servo IPM 150 Amperes/600 Volts
|
|
- Jean Morris
- 5 years ago
- Views:
Transcription
1 Powerex, Inc., 2 Hillis treet, Youngwood, Pennsylvania (724) PM15CB6 MAXI eries Multi AXI ervo IPM 15 Amperes/6 Volts H D F G A E G G AA Y TERMINAL CODE B J C V R fo F O K R U W V NC W N V N1 L (11 TYP.) V U N P Q LABEL V N W M X N P Z T T AC U N V WPC W P V WP1 V P VVPC 1. V WPC 2. W P 3. V WP1 4. V VPC 5. V P 6. V P1 7. V UPC 8. U P 9. V UP1 1. V NC 11. V N1 12. W N 13. V N 14. U N 15. F O AB V VP1 U P V UP1 VUPC Description: Powerex Intellimod Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 2kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. N W V U P R fo = 1.5K OHM Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A Q B R C D.3 7. T E 4.17±.1 16.±.3 U F V G W.8 2. H X J Y K Z.4 1. L AA.3.64 M AB.2 5. N 5.5 Dia. Dia 5.5 AC P.28 Rad. Rad. 7. Features: Complete Output Power Circuit Gate Drive Circuit Protection Logic hort Circuit Over Current Under Voltage Over Temperature by On-Chip Temperature ensor Low Loss Using 4th Generation IGBT Chip Applications: Motion Control ervo Control Ordering Information: Example: elect the complete part number from the table below -i.e. PM1CB6 is a 6V, 1 Ampere Intellimod Intelligent Power Module. Type Current Rating V CE Amperes Volts (x 1) PM
2 Powerex, Inc., 2 Hillis treet, Youngwood, Pennsylvania (724) PM15CB6 15 Amperes/6 Volts Absolute Maximum Ratings, unless otherwise specified Characteristics ymbol PM15CB6 Units torage Temperature T stg -4 to 125 C Case Operating Temperature* T C -2 to 1 C Mounting Torque, M5 Mounting crews 31 in-lb Mounting Torque, M5 Main Terminal crews 31 in-lb Module Weight (Typical) 4 Grams upply Voltage Protected by OC and C (V D = V, Inverter Part, ) V CC(prot.) 4 Volts upply Voltage, urge (Applied between P - N) V CC(surge) 5 Volts Isolation Voltage, AC 1 minute, 6Hz inusoidal V IO 25 V rms IGBT Inverter ector Collector-Emitter Voltage (, V CIN = 15V) V CE 6 Volts Collector Current, ± (T C = 25 C) I C 15 Amperes Peak Collector Current, ± (T C = 25 C) I CP 3 Amperes Collector Dissipation P C 735 Watts Power Device Junction Temperature T j -2 to 15 C Control ector upply Voltage Applied between (V UP1 -V UPC, V VP1 -V VPC, V WP1 -V WPC, V N1 -V NC ) V D 2 Volts Input Voltage Applied between (U P -V UPC, V P -V VPC, W P -V WPC, U N - V N - W N -V NC ) V CIN 2 Volts Fault Output upply Voltage (Applied between F O and V NC ) V FO V D +.5 Volts Fault Output Current (ink Current at F O Terminal) I FO 2 ma *T C Measure Point (Under the Chip) BOTTOM VIEW X Y -Y P N U V W (mm) ARM U P V P W P U N V N W N AXIGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi X Y
3 Powerex, Inc., 2 Hillis treet, Youngwood, Pennsylvania (724) PM15CB6 15 Amperes/6 Volts Electrical and Mechanical Characteristics, unless otherwise specified Characteristics ymbol Test Conditions Min. Typ. Max. Units IGBT Inverter ector Collector-Emitter Cutoff Current I CE V CE = V CE,, 1. ma V CE = V CE,, 1 ma Diode Forward Voltage V EC -I C = 15A,, V CIN = 15V Volts Collector-Emitter aturation Voltage V CE(sat), V CIN = V, I C = 15A, Volts, V CIN = V, I C = 15A, Volts Inductive Load witching Times t on µ t rr, V CIN = ~ 15V,.15.3 µ t C(on) V CC = 3V, I C = 15A,.4 1. µ t off, Inductive Load µ t C(off).5 1. µ Control ector Over Current Trip Level OC T j = -2 C, 69 Amperes, Amperes, 21 Amperes hort Circuit Trip Level C -2 C T j 125 C, 42 Amperes Over Current Delay Time t off(oc) 1 µ Over Temperature Protection OT Trip Level C (Detect T j of IGBT Chip) OT R Reset Level 125 C upply Circuit Under Voltage Protection UV Trip Level Volts (-2 T j 125 C) UV R Reset Level 12.5 Volts Circuit Current I D, V CIN = 15V, V N1 -V NC ma, V CIN = 15V, V XP1 -V XPC 15 2 ma Input ON Threshold Voltage V th(on) Applied between U P -V UPC, V P- V VPC, Volts Input OFF Threshold Voltage V th(off) W P- V WPC, U N, V N, W N -V NC Volts Fault Output Current I FO(H), V FO = 15V.1 ma I FO(L), V FO = 15V 1 15 ma Minimum Fault Output Pulse Width t FO m 3
4 Powerex, Inc., 2 Hillis treet, Youngwood, Pennsylvania (724) PM15CB6 15 Amperes/6 Volts Thermal Characteristics Characteristic ymbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance R th(j-c )Q Each IGBT*.17** C/Watt R th(j-c )F Each FWDi*.27** C/Watt Contact Thermal Resistance R th(c-f) Case to Fin Per Module,.46 C/Watt *T C measured point is just under the chips. **If you use this value, R th(f-a) should be mesured just under the chips. Thermal Grease Applied Recommended Conditions for Use Characteristic ymbol Condition Value Units upply Voltage V CC Applied across P-N Terminals 4 Volts Control upply Voltage* V D Applied between V UP1- V UPC, 15 ± 1.5 Volts V VP1 -V VPC, V WP1 -V WPC, V N1 -V NC Input ON Voltage V CIN(on) Applied between U P -V UPC, V P- V VPC,.8 Volts Input OFF Voltage V CIN(off) W P- V WPC, U N, V N, W N -V NC 4. Volts PWM Input Frequency f PWM Using Application Circuit 2 khz Minimum Dead Time t DEAD Input ignal 2.5 µ *With ripple satisfying the following conditions: dv/dt ±5v/µs, Variation 2V peak to peak. 4
5 Powerex, Inc., 2 Hillis treet, Youngwood, Pennsylvania (724) PM15CB6 15 Amperes/6 Volts COLLECTOR-EMITTER VOLTAGE, V CE(AT), (VOLT) ATURATION VOLTAGE CHARACTERITIC COLLECTOR CURRENT, I C COLLECTOR-EMITTER ATURATION VOLTAGE, V CE(AT), (VOLT) COLLECTOR-EMITTER ATURATON VOLTAGE CHARACTERITIC I C = 15A CONTROL UPPLY VOLTAGE, V D, (VOLT) COLLECTOR CURRENT, I C T j = 25 o C OUTPUT CHARACTERITIC V D = 17V COLLECTOR-EMITTER VOLTAGE, V CE(sat), (VOLT) WITCHING TIME, t on, t off, (µs) WITCHING TIME V. COLLECTOR CURRENT t off t on V CC = 3V COLLECTOR CURRENT, I C WITCHING TIME, t c(on), t c(off), (µs) WITCHING TIME V. COLLECTOR CURRENT V CC = 3V t c(on) t c(off) COLLECTOR CURRENT, I C WITCHING ENERGY, E W(on), E W(off), (mj/pule) WITCHING LO CHARACTERITIC E W(on) E W(off) V CC = 3V COLLECTOR CURRENT, I C REVERE RECOVERY TIME, t rr, (µ) REVERE RECOVERY CURRENT V. COLLECTOR CURRENT V CC = 3V I rr t rr COLLECTOR CURRENT, -I C REVERE RECOVERY CURRENT, I rr DIODE FORWARD CURRENT, -I C DIODE FORWARD CHARACTERITIC T j = 25 C T j = 125 C DIODE FORWARD VOLTAGE, V EC, (VOLT) CIRCUIT CURRENT, I D, (ma) CIRCUIT CURRENT V. CARRIER FREQUENCY CARRIER FREQUENCY, f C, (khz) N-IDE P-IDE 5
6 Powerex, Inc., 2 Hillis treet, Youngwood, Pennsylvania (724) PM15CB6 15 Amperes/6 Volts OVER CURRENT TRIP LEVEL, OC, () = OVER CURRENT TRIP LEVEL V. UPPLY VOLTAGE CONTROL UPPLY VOLTAGE, V D, (VOLT) OVER CURRENT TRIP LEVEL, OC, () = OVER CURRENT TRIP LEVEL TEMPERATURE DEPENDENCY JUNCTION TEMPERATURE, T j, ( C) FAULT OUTPUT PULE WIDTH TRIP LEVEL, t FO, (RATIO) FAULT OUTPUT PULE WIDTH V. TEMPERATURE JUNCTION TEMPERATURE, T j, ( C) UPPLY CIRCUIT UNDER VOLTAGE PROTECTION, TRIP REET LEVEL, UV t, UV r, (VOLT) CONTROL UPPLY VOLTAGE TRIP-REET LEVEL TEMPERATURE DEPENDENCY 4 2 UV t UV r JUNCTION TEMPERATURE, T j, ( C) 6
L - TYP. J TYP. S NUTS (5 TYP.) VWP1 VUPC UFO VVPC VFO VUP1 VVP1. Dimensions Inches Millimeters Q R
PM1CVA12 Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 Three Phase IGBT Inverter Output 1 Amperes/12 Volts TERMINAL CODE 1. WFO 2. VWPC 3. WP 4. VWP1 5. VFO 6. VVPC 7.
More informationU N V VPC G F V WPI W FO 12. UP U FO VP V FO V VPI GND GND IN GND GND IN V CC. Dimensions Inches Millimeters N
PM3RSF6 A D N R R R X (15 TYP.) H J V M 12 34 5678 9 11 2 2 21 22 23 24 25 E C B 13 15 17 19 14 16 18 P P P P P Y T - DIA. (2 TYP.) S 2. X.5 MM PIN (6 TYP.).8 X.4 MM PIN (19 TYP.) Q L W G F K 1. V UPC
More informationU (2 TYP.) T UFO VUP1 V CC GND GND OUT OUT OUT
PMRL1A12 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 92-7272 www.pwrx.com Three Phase IGBT Inverter + Brake Amperes/12 Volts W (6 PLACES) X (4 PLACES) AD AA W A B K K L Z V Z AG
More informationMITSUBISHI INTELLIGENT POWER MODULES PM75CVA120 FLAT-BASE TYPE INSULATED PACKAGE
PM75CVA12 TERMINAL CODE 1. WFO 2. VWPC 3. WP 4. VWP1 5. VFO 6. VVPC 7. VP 8. VVP1 9. UFO 1. VUPC 11. UP 12. VUP1 13. NC 14. FO 15. VNC 16. VN1 17. UN 18. VN 19. WN B K E P Q N A D P M 1234 5678 911112
More informationPM50RSD120 Intellimod Module Three Phase + Brake IGBT Inverter Output 50 Amperes/1200 Volts
N N Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM5RSD12 Three Phase + Brake IGBT Inverter Output 5 Amperes/12 Volts AD M M B P AB R A B 1 2 3 4 5 6 78 9 11 13 15 17
More informationPM15RSH120 Intellimod Module Three Phase + Brake IGBT Inverter Output 15 Amperes/1200 Volts
Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM15RSH12 Three Phase + Brake IGBT Inverter Output 15 Amperes/12 olts F S FO B R X T Y (15 TYP.) - DIA. (4 TYP.) X CC Outline
More informationPM10RSH120 Intellimod Module Three Phase + Brake IGBT Inverter Output 10 Amperes/1200 Volts
Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM1RSH12 Three Phase + Brake IGBT Inverter Output 1 Amperes/12 olts F S FO B R X T Y (15 TYP.) - DIA. (4 TYP.) X CC NC Q
More informationPM150RSA060 Intellimod Module Three Phase + Brake IGBT Inverter Output 150 Amperes/600 Volts
N Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 Three Phase + Brake IGBT Inverter Output AD R AB A B AB Q Y (4 TYP.) S G H N M M AG AE AG Outline Drawing and Circuit Diagram
More informationPM100RSA060 Intellimod Module Three Phase + Brake IGBT Inverter Output 100 Amperes/600 Volts
N Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM1RSA6 Three Phase + Brake IGBT Inverter Output 1 Amperes/6 Volts AD R AB A B AB Q Y (4 TYP.) S G H N Outline Drawing
More informationPM25RSK120 Intellimod Module Three Phase + Brake IGBT Inverter Output 25 Amperes/1200 Volts
N O CC O CC N FO CC N FO CC N FO CC S Powerex, nc., Hillis Street, Youngwood, Pennsylvania 5697-8 (74) 95-77 ntellimod Module Three Phase + Brake GBT nverter Output A E Z F G H AA L 4 6 5 7 8 9 6 4 5 7
More informationPS12038 Intellimod Module Application Specific IPM 25 Amperes/1200 Volts
D M SQ PINS G L A F H K E J D VV QQ PP C 24 2 9 6 3 9 7 8 7 4 2 8 RR (4 PLACES) B N P Q R S Y EE XX V T LL DD GG TT SS X 2 3 4 GG T C FF LABEL T C 6 DD GG GG U P 2 N 3 NC 4 U V 6 W TERMINAL CODE 9 GND
More informationPM100RSD120 Intellimod Module Three Phase + Brake IGBT Inverter Output 100 Amperes/1200 Volts
P Powerex, Inc., 2 Hillis Street, oungwood, Pennsylvania 15697-18 (724) 925-7272 PM1RSD12 Three Phase + rake IGT Inverter Output 1 Amperes/12 olts AA - DIA. (4 TP.) H AC A R AC Z Q Q J T A - THD (6 TP.)
More informationY (4 TYP.) V VPC 16. U N V WPI 15. NC F O 10. UP UFO V FO V VPI GND GND GND GND V CC OUT OUT S I
N MITSBISHI TELLIGENT POER MODLES SLATED PACKAGE AD R AB A B AB Q Y (4 TYP.) S G H FO N NC M M AG AE NC AG V V NC N B P V NI OT 1234 5678 9 AA - THD (6 TYP.) K J J D 1 11 13 15 AD (15 TYP.) 12 14 16 18
More informationY (4 TYP.) V VPC 16. U N V WPI 15. NC F O 10. UP UFO V FO V VPI GND GND GND GND V CC OUT OUT S I
N MITSBISHI TELLIGENT POER MODLES PM15CSA6 SLATED PACKAGE AD R AB A B AB Q Y (4 TYP.) S G H FO N NC M M AG AE NC AG V V NC N B P V NI OT 1234 5678 9 AA - THD (6 TYP.) K J J D 1 11 13 15 AD (15 TYP.) 12
More informationV VPC 16. UN V WPI F O 19. FO UP UFO V VPI V FO GND GND IN V CC OUT OUT S I
N MITSBISHI TELLIGENT POER MODLES PM5RSA6 AB Q Z A B Z R S M M AE B P 1234 5678 9 11 13 15 17 19 1 12 14 16 18 AB (15 TYP.) X - DIA. (4 TYP.) Y - THD (6 TYP.) V F E C 1. VPC 2. FO 3. P 4. VPI 5. VVPC 6.
More informationPM75B4LA060 PM75B4LB060 Photo Voltaic IPM H-Bridge 75 Amperes/600 Volts
M75B4LA060 M75B4LB060 hoto oltaic IM 75 Amperes/600 olts ackage A E F L H J J A D G M J TERMAL CODE 1 C 2 FO 3 4 1 5 C 6 FO 7 8 1 9 C 10 C AD W AE Q AG (2 LACES) 1 5 9 19 B W R T AF AB (6 LACES) AA C B
More informationT C MEASURED POINT G1 E1 E2 G2 W - (4 PLACES) G2 E2 E1 G1
CMDU-3KA Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1 (7) 95-77 Dual IGBTMOD KA-Series Module Amperes/17 Volts B F A G T C MEASURED POINT M C L T - ( TYP.) N R Z CE1 E C1 C E AA S - (3
More informationDETAIL "A" #110 TAB (8 PLACES) X (4 PLACES) Y (3 PLACES) TH1 TH2 F O 1 F O 2 DETAIL "A"
MG6Q2YS6A Powerex, Inc., 2 E. Hillis Street, Youngwood, Pennsylvania 15697-1 (72) 925-7272 Compact IGBT Series Module 6 Amperes/ olts A D H J K DETAIL "A" C2E1 E2 C1 B E F W M F Outline Drawing and Circuit
More informationC N V (4TYP) U (5TYP) Dimensions Inches Millimeters L 0.69± ±0.25 M N P Q
QID3322 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 2 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E 1 2 3 6 M H 4 V
More informationCM1000DUC-34SA. Mega Power Dual IGBT 1000 Amperes/1700 Volts
CM1DUC-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 Amperes/17 Volts A P D (8 PLACES) G U H H N S L K C2 C2E1 C1 W X J F BB G2 E2 E1 G1 Y C B Z E CC
More informationC N V (4TYP) U (5TYP)
QID3316 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 1 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E M 1
More informationCM200EXS-24S. Chopper IGBT NX-Series Module 200 Amperes/1200 Volts
CM2EXS-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Chopper IGBT NX-Series Module 2 Amperes/12 Volts A D K F G J E H J S T U 6 5 4 3 M 7 2 L N AL (4 PLACES)
More informationAK AJ AT AR DETAIL "A" N M L K B AB (6 PLACES) DETAIL "B" TH1 (11) TH2 (10) NTC *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5
Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) 925-7272 www.pwrx.com Six IGBTMOD + Brake NX-S Series Module AH AN AC AD AE H AK AJ A D E F G AK AJ AP AT AR AQ AS C AX BB BC BD DETAIL
More informationCM75MX-12A. NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts
Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 97 (7) 9-72 www.pwrx.com J L M A E F G M L AA AB C Z AG AH AJ A DETAIL "A" X AD H T U 53 V V P(52-53) R S T (-2) (5-6) (9-) ConvDi 52 5 5 49 48
More informationL K K K K P P1 N GU EU GV EV GW EW GU GVGW GB E LABEL H H
Three Phase Converter + Three Phase Inverter + Brake A ( PLACES) G J L L L P P1 N GU EU GV EV GW EW GU GVGW GB E Q C R D LABEL D U B R S T S V 3 MAIN TERMINAL X P P1 Outline Drawing and Circuit Diagram
More informationPM150CLA120 PM150CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM150CLA120
MITSUBISHI PM10CLA10 PM10CLA10 TYPE PM10CLA10 FEATURE a) Adopting new th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. r example,
More informationPM25CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM25CLA120 MITSUBISHI <INTELLIGENT POWER MODULES>
PMCLA PMCLA FEATURE a) Adopting new th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. r example, typical ce(sat)=1.9 @Tj=1 C b) I adopt the over-temperature conservation
More informationExcellent Integrated System Limited
Datasheet of CM2TU-12H - IGBT MOD 6PAC 6V 2A U SER Excellent Integrated System Limited Stocking Distributor Click to view price, real time Inventory, Delivery & Lifecycle Information: Powerex Inc. CM2TU-12H
More informationTechnical. Application. Assembly. Availability. Pricing. Phone
611 Baker Road, Suite 1 Minnetonka, MN 5535 www.chtechnology.com Phone (95) 933-619 Fax (95) 933-63 1--7- Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology
More informationPM300CLA120 PM300CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM300CLA120
MITSUBISHI PM00CLA10 PM00CLA10 TYPE PM00CLA10 FEATURE a) Adopting new th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. r example,
More informationTechnical. Application. Assembly. Availability. Pricing. Phone
6 Baker Road, Suite Minnetonka, MN 5535 www.chtechnology.com Phone (95) 933-69 Fax (95) 933-63 --7- Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology team
More informationPM200CS1D060 FLAT-BASE TYPE INSULATED PACKAGE
PMCS1D PMCS1D FEATURE verter + Drive & Protection IC phase A/ CSTBT TM (The Current senser and the thermal senser with a build-in CSTBT TM.) Monolithic gate drive & protection logic Detection, protection
More informationTechnical. Application. Assembly. Availability. Pricing. Phone
62 Baker Road, Suite 8 Minnetonka, MN 55345 www.chtechnology.com Phone (952) 933-69 Fax (952) 933-6223 -8-274-4284 ank you for downloading this document from C&H Technology, Inc. Please contact the C&H
More informationPM50CLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM50CLB060 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>
PM0CLB060 PM0CLB060 FEATURE a) Adopting new th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)=. @Tj= C b) I adopt the over-temperature conservation
More informationPM150RL1A120 FLAT-BASE TYPE INSULATED PACKAGE
PMRL1 PMRL1 FETURE verter + Brake + Drive & Protection IC a) dopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM
More informationPM75B4LA060. APPLICATION Photo voltaic power conditioner PM75B4LA060 MITSUBISHI <INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE FEATURE
PMB4LA060 PMB4LA060 FEATURE a) Adopting new th generation IGBT (CSTBT TM ) chip, which performance is improved by 1µm fine rule process. r example, typical ce(sat)=1. @Tj=1 C b) Over-temperature protection
More informationX (11 PLACES) TERMINAL CODE 1 SUP 2 SVP 3 SWP 4 SUN 5 SVN 6 SWN 7 GUP 8 GVP 9 GWP 10 GUN (13) 11 GVN 12 GWN 13 TH1 14 TH2 (14)
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module G Q G H K L A D F M L N X (11 PLACES) P R AD AB AC J P N Z AB AE Outline Drawing
More informationV (4TYP) U (5TYP) L 0.69± ±0.25 M N P Q R S M6 Metric M6 T 0.63 Min Min.
QID42 Powerex, Inc., 7 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 92-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module Amperes/4 Volts S NUTS (TYP) F A D F J (2TYP) N 7 8 H B E 2 6 M H 4 V (4TYP) G (TYP)
More informationW - DIA. (4 TYP.) AE AG AH AJ R
M6HA-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (72) 925-7272 www.pwrx.com Single IGBT A-Series Module 6 Amperes/12 Volts H G F D K J W - DIA. ( TYP.) AF A AG Y X Y Z G AA K B A
More informationPM50B6LA060 FLAT-BASE TYPE INSULATED PACKAGE
PM0B6L060 PM0B6L060 FETURE a) dopting new th generation IGBT (CSTBT TM ) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)=. @Tj= C b) Over-temperature protection
More informationPM150RLA060. APPLICATION General purpose inverter, servo drives and other motor controls PM150RLA060 MITSUBISHI <INTELLIGENT POWER MODULES>
FETURE a) dopting new th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)= @Tj= C b) I adopt the over-temperature conservation by Tj detection
More informationPM100RLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM100RLA120 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>
PM00RL0 PM00RL0 FETURE a) dopting new th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)=.9 @Tj= C b) I adopt the over-temperature conservation
More informationCM400DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM400DY-24A. IC...400A VCES V Insulated Type 2-elements in a pack
CM00DY-A CM00DY-A IC...00A CES... 0 Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9±0. G 80 6±0. CE E C G E
More informationCM300DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM300DY-24A. IC...300A VCES V Insulated Type 2-elements in a pack
CM00DY-A CM00DY-A IC...00A CES... 0 Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 8 9±0. -M6 NUTS G +1.0 0 0.
More informationMITSUBISHI ELECTRIC CORPORATION Prepared by S.Iura A S.Iura B S.Iura
SECURITY CODE Spec. NME Customer s Std. Spec. MITSUBISHI ELECTRIC CORP. PRELIMINRY MITSUBISHI ELECTRIC CORPORTION Prepared by S.Iura S.Iura B S.Iura Checked by H.Yamaguchi R I.Umezaki I.Umezaki E pproved
More informationM63954P. HVIC Half-Bridge Driver
M9P Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 97- (7) 9-77 HVIC Half-Bridge Driver 9 E e c Description: M9P is a high voltage integrated circuit designed for electronic ballast, Power MOSFET
More informationAPPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1000HG-130XA
CMHG-3XA CMHG-3XA I C A V CES 65 V -element in pack High Insulated type CSTBT TM (III) / RFC Diode AlSiC baseplate APPLICATION Traction drives,
More information< HVIGBT MODULES > CM750HG-130R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM750HG-130R
I C 75A V CES V -element in a pack High Insulated type LPT-IGBT / Soft Recovery Diode AlSiC baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING &
More informationD1 D2 D3 T1 T2 T3 5 D4 D5 D6 T4 T5 T6 7
MIX 11WEH Six-Pack XPT IGBT CES 5 = = 155 CE(sat) = 1. Part name (Marking on product) MIX11WEH 13, 1 1 D1 D D3 T1 T T3 5 9 1 19 17 15 E773 3 D D5 D T T5 T 7 11 1, Features: Easy paralleling due to the
More informationSix-Pack XPT IGBT MIXA30W1200TED. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TED
MIX3W2TED Six-Pack XPT IGBT CES = 2 2 = 43 CE(sat) =.8 Part name (Marking on product) MIX3W2TED 2, 2, 9 7 NTC 2 23, 24 2, 22 9, 2 E 72873 8 3 7 Pin configuration see outlines. 4 27, 28 8 2 3, 4 Features:
More informationKDG25R12KE3. Symbol Description Value Units V CES Collector-Emitter Blocking Voltage 1200 V V GES Gate-Emitter Voltage ±20 V
KDGR12KE3 IGBT Module KDGR12KE3 Features: IGBT Inverter Short Circuit Rated μs IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications:
More informationMMIX4B12N300 V CES = 3000V. = 11A V CE(sat) 3.2V. High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor Preliminary Technical Information V CES = 3V 11 = 11A V CE(sat) 3.2V C1 C2 (Electrically Isolated Tab) G1 E1C3 G2 E2C G3 G E3E C1 C2
More information< HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
< HVIGBT MODULE > I C 2A V CES 7V 2-element in a Pack Insulated Type CSTBT SiC Schottky-Barrier Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE
More informationIXBK55N300 IXBX55N300
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK55N3 IXBX55N3 V CES = 3V 11 = 55A V CE(sat) 3.2V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 3 V
More informationSix-Pack XPT IGBT MIXA80W1200TEH V CES I C25 = 1200 V. Part name (Marking on product) MIXA80W1200TEH
MIXW1TEH Six-Pack XPT IGBT CES = 1 = 1 CE(sat) = 1. Part name (Marking on product) MIXW1TEH 3, 31, 3 1, 17, 1 1 T1 D1 T3 D3 9 T D 19 NTC 3 T D 7 9 7 T D 1 11 T D 1 3 E773 Pin configuration see outlines.
More informationIXBK55N300 IXBX55N300
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor V CES = V 11 = 55A V CE(sat) 3.2V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C V V CGR = 25 C to 15 C,
More informationIXGH48N60A3D C
GenX TM V IGBT w/diode Ultra Low Vsat PT IGBT for up to khz switching IXGH8NAD S = V = 8A (sat).v TO-7 AD Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous
More informationConverter - Brake - Inverter Module (CBI 1) Trench IGBT
Converter - Brake - Inverter Module (CBI 1) Trench IGBT Preliminary data Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 16 CES = 12 CES = 12 I DM25 = 151 I C25 = 19 I C25 = 43 I FSM = 32
More information10 23, 24 21, 22 19, , 14
MWI -T7T Six-Pack Trench IGBT = S = (sat) typ. = 1.7 Part name (Marking on product) MWI -T7T, 1, 1 1 9 17 NTC 1 3, 1, 19, E773 1 3 7 11 Pin configuration see outlines. 7, 13, 1 Features: Trench IGBT technology
More informationConverter - Brake - Inverter Module (CBI 1) NPT IGBT
MUBW35-066K Converter - Brake - Inverter Module (CBI 1) NPT IGBT Preliminary data Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 1600 CES = 600 CES = 600 I DM25 = 130 I C25 = 25 I C25 =
More informationConverter - Brake - Inverter Module XPT IGBT
MIX3WBTED Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = CES = Three Phase Inverter CES = I DM = 5 5 = 7 5 = 43 I FSM = 3 CE(sat) =. CE(sat) =. Part name (Marking
More informationConverter - Brake - Inverter Module (CBI 1) NPT IGBT
MUBW20-066K Converter - Brake - Inverter Module (CBI 1) NPT IGBT Preliminary data Three Phase Rectifier Brake Chopper RRM = 1600 CES = 600 CES Three Phase Inverter = 600 I DM25 = 95 I C25 = 12 I C25 =
More informationIXXH75N60C3D1 V CES = 600V I C110. XPT TM 600V IGBT GenX3 TM w/ Diode. = 75A V CE(sat) 2.3V t fi(typ) = 75ns
XPT TM 6V IGBT GenX TM w/ Diode Extreme Light Punch Through IGBT for -6 khz Switching IXXH7N6CD S = 6V = 7A (sat).v t fi(typ) = 7ns Symbol Test Conditions Maximum Ratings S = C to 7 C 6 V V CGR = C to
More informationMMIX4B22N300 V CES. = 3000V = 22A V CE(sat) 2.7V I C90
Advance Technical Information High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) C G EC3 Symbol Test Conditions Maximum Ratings G3 C2 G2 E2C V CES = 25 C
More information1200 V 600 A IGBT Module
1200 V 600 A IGBT RoHS Features Trench-gate field stop IGBT technology Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and
More informationConverter - Brake - Inverter Module XPT IGBT
MIXWBTML Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = 16 CES = Three Phase Inverter CES = I DM2 = 1 2 = 17 2 = 28 I FSM = 3 CE(sat) = 1.8 CE(sat) = 1.8 Part name
More informationIXYH40N120C3D1 V CES
V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching IXYHNC3D S = V 9 = A (sat).v t fi(typ) = 38ns Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous
More informationIGBT Module H Bridge MIXA81H1200EH. = 1200 V = 120 A V CE(sat) = 1.8 V V CES I C25. Part name (Marking on product) MIXA81H1200EH.
MIX1H1EH IGBT Module H Bridge CES 5 = 1 = 1 CE(sat) = 1. Part name (Marking on product) MIX1H1EH 13, 1 1 9 1 19 15 E773 3 11 1 1, Features: pplication: Package: Easy paralleling due to the positive temperature
More informationSTARPOWER IGBT GD1000HFL170P2S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1700V/1000A 2 in one-package
STARPOWER SEMICONDUCTOR IGBT GD1HFL17P2S Molding Type Module 17V/1A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.
More informationParameter Symbol Conditions Values Unit. V CC = 900 V, V CEM 1200 V V GE 15 V, Tv j 125 ºC
IGBT/SiC Diode Co-pack Features Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds Temperature independent
More informationSix-Pack XPT IGBT MIXA80W1200TED V CES I C25. = 1200 V = 120 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA80W1200TED
MIXW12TED SixPack XPT IGBT CES 2 = 12 = 12 CE(sat) = 1. Part name (Marking on product) MIXW12TED 2, 2 1, 1 1 9 17 NTC 2 1 23, 24 21, 22 19, 2 E 7273 1 3 7 11 Pin configuration see outlines. 4 27, 2 12
More informationIXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor S = V = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 1 C V V CGR T J = 25 C to 1 C, R GE = 1MΩ V
More informationIXXH60N65B4H1 V CES. XPT TM 650V IGBT GenX4 TM w/ Sonic Diode = 650V I C110. = 60A V CE(sat) 2.2V = 43ns. t fi(typ)
XPT TM 65V IGBT GenX TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-3 khz Switching IXXH6N65BH V CES = 65V = 6A V CE(sat) 2.2V = 3ns t fi(typ) TO-27 Symbol Test Conditions Maximum Ratings V CES
More informationSTARPOWER IGBT GD600HFT120C2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD600HFT120C2S_G8 1200V/600A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are
More informationSymbol Parameter Test condition Value Unit V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20 V
FEATURES 1200V,100A,V CE(sat) (typ.)=1.75v@v GE =15V IGBT CHIP: Trench + Field Stop technology Fast switching and short tail current Low switching losses RoHS Compliant APPLICATIONS Electric welding machine
More informationHiPerFAST TM High Speed IGBT C2-Class w/ Diode
HiPerFAST TM High Speed IGBT C2-Class w/ Diode IXGK5N6C2D1 IXGX5N6C2D1 S = 6V 11 = 5A (sat) 2.7V (typ) = 48ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 6 V V CGR = 25 C to 15
More informationConverter - Brake - Inverter Module (CBI3) with Trench IGBT technology
MUBW 5- T Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology NTC D D3 D5 7 D7 5 T T3 T5 D D3 D5 7 9 3 5 9 D D D T7 T T T D D D 3 3 Three Phase Rectifier Brake Chopper Three Phase Inverter
More informationIXGR72N60B3H1. GenX3 TM 600V IGBT w/ Diode = 600V = 40A. 1.80V t fi(typ) = 92ns. (Electrically Isolated Tab)
GenX TM V IGBT w/ Diode (Electrically Isolated Tab) IXGRNBH S = V = A (sat).8v t fi(typ) = 9ns Medium Speed Low Vsat PT IGBT for - khz Switching ISOPLUS TM Symbol Test Conditions Maximum Ratings S = C
More informationIXGH60N60C3 = 600V I C110. GenX3 TM 600V IGBT V CES. = 60A V CE(sat) 2.5V t fi (typ) = 50ns. High Speed PT IGBT for kHz Switching TO-247 AD
GenX3 TM V IGBT High Speed PT IGBT for -khz Switching IXGHNC3 V CES = V 11 = A V CE(sat) V t fi (typ) = 5ns Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C V V CGR = 25 C to 15 C, R GE = 1MΩ
More informationSTARPOWER IGBT GD600SGK120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD6SGK12C2S 12V/6A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as short circuit ruggedness. They
More informationConverter - Brake - Inverter Module XPT IGBT
MIXWB2TEH Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = CES = 2 Three Phase Inverter CES = 2 I DM = 25 25 = 25 = 2 I FSM = CE(sat) =. CE(sat) =. Part name (Marking
More informationXPT TM 600V IGBT GenX3 TM w/diode MMIX1X200N60B3H1 = 600V I C110 V CES. = 72A V CE(sat) 1.7V t fi(typ) = 110ns. Preliminary Technical Information
XPT TM 6V IGBT GenX3 TM w/diode (Electrically Isolated Tab) Preliminary Technical Information MMIXXN6B3H S = 6V = 7A (sat).7v t fi(typ) = ns Extreme Light Punch Through IGBT for -3kHz Switching Symbol
More informationSTARPOWER IGBT GD300HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD3HFY12C6S 12V/3A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More information) unless otherwise specified Symbol Description Values Units
IGBT Modules VCES IC 10V A Applicatio Industrial Inverters Servo Applicatio SMPS UPS Induction Heating Circuit Features Short Circuit Rated 10μs Low Stray Inductance Low Saturation Voltage Ultra Low loss
More informationSTARPOWER IGBT GD25PIT120C5S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1200V/25A PIM in one-package
STARPOWER SEMICONDUCTOR IGBT GD2PIT12CS Molding Type Module 12V/2A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.
More informationSTARPOWER IGBT GD450HFY120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD45HFY12C2S 12V/45A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More informationIXBT24N170 IXBH24N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBT24N17 IXBH24N17 S 11 = 1 = 24A (sat) 2. TO-26 (IXBT) Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 17 V V CGR = 25 C
More informationACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC
Datasheet ACPACK 2 converter inverter brake, 12 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Features ACPACK 2 ACPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake topology
More informationABB HiPak TM. IGBT Module 5SNA 1200E V CE = 2500 V I C = 1200 A
V CE = 25 V I C = 2 A ABB HiPak TM IGBT Module 5SNA 2E25 Doc. No. 5SYA 557-2 July 4 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC
More informationA1P50S65M2. ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC. Datasheet. Features.
Datasheet ACPACK 1 sixpack topology, 65 V, 5 A trench gate field-stop IGBT M series, soft diode and NTC Features ACPACK 1 ACPACK 1 power module DBC Cu Al 2 O 3 Cu Sixpack topology 65 V, 5 A IGBTs and diodes
More informationIXYH10N170CV1 V CES = 1700V I C110. High Voltage XPT TM IGBT w/ Diode. = 10A V CE(sat) 3.8V = 70ns. t fi(typ) Advance Technical Information TO-247 AD
High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYHN7CV V CES = 7V = A V CE(sat).V = 7ns t fi(typ) Symbol Test Conditions Maximum Ratings V CES = C to 7 C 7 V V CGR = C to 7 C, R GE =
More informationIXYN82N120C3H1 V CES
V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching IXYNNC3H S = V = A (sat) 3.V t fi(typ) = 93ns SOT-B, minibloc E33 Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C,
More informationIXYN80N90C3H1 V CES = 900V I C V XPT TM IGBT GenX3 TM w/ Diode. = 70A V CE(sat) 2.7V t fi(typ) = 86ns. Advance Technical Information
9V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching Advance Technical Information IXYNN9C3H S = 9V 9 = 7A (sat).7v t fi(typ) = ns E Symbol Test Conditions Maximum Ratings S = C to C 9
More informationACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC
Datasheet ACEPACK 2 converter inverter brake, 12 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK TM 2 ACEPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake
More informationIXBT12N300 IXBH12N300
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor S 11 = 3V = A (sat) 3.2V TO-26 (IXBT) Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 3 V V CGR = 25 C to 15 C, R GE = 1MΩ
More informationCM1400DU-24NF. APPLICATION UPS & General purpose inverters, etc CM1400DU-24NF. IC A VCES V Insulated Type 2-elements in a pack
IC... 1 CES... 1 Insulated Type -elements in a pack PPLICTION UPS & General purpose inverters, etc OUTLINE DRWING & CIRCUIT DIGRM Dimensions in mm,b HOUSING Type (J. S. T. Mfg. Co. Ltd) : HR-N B : HR-N
More informationConverter - Brake - Inverter Module (CBI3) with Trench IGBT technology
Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6 12 13 E72873
More informationACEPACK 2 converter inverter brake, 1200 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC
Datasheet ACEPACK 2 converter inverter brake, 12 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK TM 2 ACEPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake
More informationIXXH80N65B4H1 V CES. XPT TM 650V IGBT GenX4 TM w/ Sonic Diode = 650V I C110. = 80A V CE(sat) 2.1V = 52ns. t fi(typ)
XPT TM 5V IGBT GenX TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-3 khz Switching IXXHN5BH S = 5V = A (sat).v = 5ns t fi(typ) Symbol Test Conditions Maximum Ratings S = 5 C to 75 C 5 V V CGR
More informationAdvance Technical Information IXFN110N85X V DSS. High Power Density Easy to Mount Space Savings BV DSS. = 3mA 850 V. = 8mA
Advance Technical Information X-Class HiPerFET TM Power MOFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN11N85X V D = 85V I D25 = 11A R D(on) 33m D minibloc, OT-227 E153432 ymbol
More information