IXXH75N60C3D1 V CES = 600V I C110. XPT TM 600V IGBT GenX3 TM w/ Diode. = 75A V CE(sat) 2.3V t fi(typ) = 75ns

Transcription

1 XPT TM 6V IGBT GenX TM w/ Diode Extreme Light Punch Through IGBT for -6 khz Switching IXXH7N6CD S = 6V = 7A (sat).v t fi(typ) = 7ns Symbol Test Conditions Maximum Ratings S = C to 7 C 6 V V CGR = C to 7 C, R GE = MΩ 6 V V GES Continuous ± V V GEM Transient ± V = C (Chip Capability) A = C 7 A = C A M = C, ms A I A = C A E AS = C mj SSOA V GE = V, = C, R G = Ω M = A (RBSOA) Clamped Inductive S t sc V GE = V, = 6V, = C μs (SCSOA) R G = Ω, Non Repetitive P C = C 7 W C M 7 C T stg C T L Maximum Lead Temperature for Soldering C T SOLD.6 mm (.6in.) from Case for s 6 C M d Mounting Torque./ Nm/lb.in. Weight 6 g TO-7 AD G C E Tab G = Gate C = Collector E = Emitter Tab = Collector Features Optimized for -6kHz Switching Square RBSOA Anti-Parallel Ultra Fast Diode Avalanche Capability Short Circuit Capability International Standard Package Advantages High Power Density 7 C Rated Extremely Rugged Low Gate Drive Requirement Symbol Test Conditions Characteristic Values ( = C, Unless Otherwise Specified) Min. Typ. Max. BS = μa, V GE = V 6 V V GE(th) = μa, = V GE.. V ES = S, V = V μa GE = C ma I GES = V, V GE = ±V ± na (sat) = 6A, V GE = V, Note.8. V = C. V Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts IXYS CORPORATION, All Rights Reserved DSC(/)

2 IXXH7N6CD Symbol Test Conditions Characteristic Values ( = C Unless Otherwise Specified) Min. Typ. Max. g fs = 6A, = V, Note S C ies pf C oes = V, V GE = V, f = MHz 9 pf C res 6 pf Q g(on) 7 nc Q ge = 7A, V GE = V, =. S 8 nc Q gc 6 nc ns t ri Inductive load, = C 7 ns = 6A, V GE = V.6 mj t d(off) = V, R G = Ω 9 ns t fi Note 7 ns E off.8. mj ns t ri Inductive load, = C 7 ns = 6A, V GE = V. mj t d(off) = V, R G = Ω ns t fi Note 8 ns E off.7 mj R thjc. C/W R thcs. C/W TO-7 (IXXH) Outline Terminals: - Gate - Emitter e P - Collector Dim. Millimeter Inches Min. Max. Min. Max. A A A b.... b b C D E e..7.. L L..77 P..6.. Q R S 6. BSC BSC Reverse Diode (FRED) Symbol Test Conditions Characteristic Values ( = C Unless Otherwise Specified) Min. Typ. Max. V F = A, V GE = V, Note.7 V = C.6 V I RM = A, V GE = V, -di F = A/μs, = C A t rr = V = C ns = A, V GE = V, -di F = A/μs, = V ns R thjc.9 C/W Notes:. Pulse test, t μs, duty cycle, d %.. Switching times & energy losses may increase for higher (clamp), or R G. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,8,9,9,8,9,96,7,8 6,6,66 6,,6 B 6,68, 6,77,8 7,,7 B 7,7,8B by one or more of the following U.S. patents:,86,7,7,8,6,7,8, 6,9, B 6,, 6,7, B 6,79,69 7,6,97 B,88,6,,796,87,7,86,7 6,6,78 B 6,8, 6,7,6 6,77,78 B 7,7,7

3 IXXH7N6CD Fig.. Output = ºC Fig.. Extended Output = ºC V GE = V V V V GE = V V 8 6 8V 7V V V V 9V V V V V 9V 7V 8 6 Fig.. Output = ºC 6V V GE = V V V V V V 9V 8V VCE(sat) - Normalized V GE = V Fig.. Dependence of (sat) on = A = 7A = 7.A Degrees Centigrade 8 Fig.. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 7 = ºC VCE - Volts 6 7A = A 8 6 = ºC ºC - ºC 7.A 9 V GE - Volts V GE - Volts IXYS CORPORATION, All Rights Reserved

4 IXXH7N6CD Fig. 7. Transconductance 6 Fig. 8. Gate Charge = - ºC, ºC, ºC = V = 7A I G = ma g f s - Siemens VGE - Volts Amperes Q G - NanoCoulombs, Fig. 9. Capacitance 6 Fig.. Reverse-Bias Safe Operating Area Capacitance - PicoFarads, f = MHz C ies C oes C res 8 6 = ºC R G = Ω dv / dt < V / ns Fig.. Maximum Transient Thermal Impedance 6. Fig.. Maximum Transient Thermal Impedance aasss. Z(th)JC - ºC / W Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

5 IXXH7N6CD Fig.. Inductive Switching Energy Loss vs. Gate Resistance 9.6 Fig.. Inductive Switching Energy Loss vs. Collector Current. E off = ºC, V GE = V = V E off R G = Ω, V GE = V = V = ºC. Eoff - MilliJoules.. = 8A 6 - MilliJoules Eoff - MilliJoules.8.6 = ºC.. - MilliJoules.. = A.. R G - Ohms Amperes.8 Fig.. Inductive Switching Energy Loss vs.. Fig.. Inductive Turn-off Switching Times vs. Gate Resistance Eoff - MilliJoules E off R G = Ω, V GE = V = V = 8A = A MilliJoules t f i t f i t d(off) = ºC, V GE = V = V = 8A = A t d(off) Degrees Centigrade R G - Ohms t f i 9 Fig. 6. Inductive Turn-off Switching Times vs. Collector Current t f i t d(off) R G = Ω, V GE = V = V = ºC 7 t d(off) t f i Fig. 7. Inductive Turn-off Switching Times vs. t f i t d(off) R G = Ω, V GE = V = V = A = 8A 9 t d(off) 7 = ºC Amperes Degrees Centigrade IXYS CORPORATION, All Rights Reserved

6 IXXH7N6CD Fig. 8. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 9. Inductive Turn-on Switching Times vs. Collector Current 9 t r i t r i = ºC, V GE = V R G = Ω, V GE = V 7 = V = V = ºC t r i 6 8 = 8A = A 8 6 t r i 8 6 = ºC 9 R G - Ohms Amperes 8 Fig.. Inductive Turn-on Switching Times vs. 6 t r i R G = Ω, V GE = V = V t r i 8 6 = 8A 8 6 = A Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

7 IXXH7N6CD IF 6 A = C = C = C Q r nc 8 6 = C = V = 6A = A = A I RM A = C = V = 6A = A = A V A/μs 6 A/μs 8 V F -di F -di F Fig.. Forward Current Versus V F Fig.. Reverse Recovery Charge Q r Versus -di F Fig.. Peak Reverse Current I RM Versus -di F K f... t rr 9 ns 8 = 6A = A = A = C = V V FR V t fr = C = A V FR. μs t fr.7. I RM 7. Q r.. 8 C 6 Fig.. Dynamic Parameters Q r, I RM Versus 6 6 A/μs 8 -di F Fig.. Recovery Time t rr Versus -di F. 6 A/μs 8 di F Fig. 6. Peak Forward Voltage V FR and t fr Versus di F K/W. Z thjc Constants for Z thjc calculation: i R thi (K/W) t i (s) DSEP s t Fig. 7. Transient Thermal Resistance Junction to Case IXYS CORPORATION, All Rights Reserved IXYS REF: IXX_7N6C(7)--