IXFK360N15T2 IXFX360N15T2

Transcription

1 GigaMOS TM TrenchT2 HiperFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK36N15T2 IXFX36N15T2 V DSS = 15V I D25 = 36A R DS(on) 4.m t rr 15ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings V DSS = 25 C to 175 C 15 V V DGR = 25 C to 175 C, R GS = 1M 15 V S Continuous 2 V M Transient 3 V I D25 = 25 C (Chip Capability) 36 A I L(RMS) External Lead Current Limit 16 A I DM = 25 C, Pulse Width Limited by M 9 A I A = 25 C A E AS = 25 C TBD J P D = 25 C 167 W dv/dt I S I DM, V DD V DSS, 175 C 2 V/ns C M 175 C T stg C T L Maximum Lead Temperature for Soldering 3 C T SOLD 1.6 mm (.62in.) from Case for 1s 26 C M d Mounting Torque (TO-264) 1.13/1 Nm/lb.in. F C Mounting Force (PLUS247) / N/lb. Weight TO g PLUS247 6 g Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. BV DSS = V, I D = 3mA 15 V (th) V DS =, I D = 8mA V I GSS = 2V, V DS = V na I DSS V DS = V DSS, = V 5 A = 15 C 5 ma R DS(on) = 1V, I D = 6A, Note 1 4. m G D S PLUS247 (IXFX) G D S G = Gate D = Drain S = Source Tab = Drain Features International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R DS(on) Advantages Easy to Mount Space Savings High Power Density Applications Tab Tab Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications 216 IXYS CORPORATION, All Rights Reserved DS181A(8/16)

2 Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. g fs V DS = 1V, I D = 6A, Note S C iss 47.5 nf C oss = V, V DS = 25V, f = 1MHz 36 pf C rss 665 pf t d(on) 5 ns Resistive Switching Times t r 17 ns V t GS = 1V, V DS =.5 V DSS, I D = A d(off) R 115 ns G = 1 (External) t f 265 ns Q g(on) 715 nc Q gs = 1V, V DS =.5 V DSS, I D =.5 I D nc Q gd nc R thjc.9 C/W R thcs Source-Drain Diode.15 C/W Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. I S = V 36 A I SM Repetitive, Pulse Width Limited by M 144 A V SD I F = 6A, = V, Note V t rr 15 ns I Q F = 16A, -di/dt = A/ s RM.5 C V I R = 6V, = V RM 9. A TO-264 (IXFK) Outline IXFK36N15T2 IXFX36N15T2 Dim. Millimeter Inches Min. Max. Min. Max. A A A b b b c D E e 5.46 BSC.215 BSC J K L L P Q Q R R S T PLUS 247 TM (IXFX) Outline Pins: 1 - Gate 2,4 - Drain 3 - Source Note 1. Pulse test, t 3 s; duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Dim. Millimeter Inches Min. Max. Min. Max. A A A b b b C D E e 5.45 BSC.215 BSC L L Q R IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,44,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,85,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,45 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537

3 IXFK36N15T2 IXFX36N15T2 Fig. 1. Output = 25ºC Fig. 2. Extended Output = 25ºC 35 3 = 15V 1V 8V 7V 35 3 = 1V 7V 6V V 15 5V 5 5V V Fig. 3. Output = 15ºC = 1V 8V 7V Fig. 4. R DS(on) Normalized to I D = 18A Value vs. Junction Temperature = 1V V 5V RDS(on) - Normalized I D = 36A I D = 18A 5 4V Degrees Centigrade 3.4 Fig. 5. R DS(on) Normalized to I D = 18A Value vs. Drain Current 18 Fig. 6. Drain Current vs. Case Temperature RDS(on) - Normalized = 1V = 175ºC = 25ºC External Lead Current Limit Degrees Centigrade 216 IXYS CORPORATION, All Rights Reserved

4 IXFK36N15T2 IXFX36N15T2 Fig. 7. Input Admittance Fig. 8. Transconductance = - 4ºC = 15ºC 25ºC - 4ºC g f s - Siemens ºC 15ºC Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 1 Fig. 1. Gate Charge I D = 18A I G = 1mA IS - Amperes 15 = 15ºC VGS - Volts = 25ºC V SD - Volts Q G - NanoCoulombs, Fig. 11. Capacitance R DS(on) Limit Fig. 12. Forward-Bias Safe Operating Area 25µs Capacitance - PicoFarads 1, 1, f = 1 MHz C iss C oss C rss 1 1 External Lead Limit = 175ºC = 25ºC Single Pulse µs 1ms 1ms ms DC , IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

5 IXFK36N15T2 IXFX36N15T2 34 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 3 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R G = 1Ω, = 1V R G = 1Ω, = 1V 3 26 t r - Nanoseconds I D = A t r - Nanoseconds = 25ºC = 125ºC 14 I D = A Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 21 7 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 22 t r t d(on) t f t d(off) 6 = 125ºC, = 1V 18 6 R G = 1Ω, = 1V t r - Nanoseconds I D = A I D = A t d(on) - Nanoseconds t f - Nanoseconds I D = A I D = A t d(off) - Nanoseconds R G - Ohms Degrees Centigrade 7 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 24 9 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 9 t f - Nanoseconds = 25ºC t f t d(off) R G = 1Ω, = 1V = 125ºC t d(off) - Nanoseconds t f - Nanoseconds t f t d(off) = 125ºC, = 1V I D = A, A t d(off) - Nanoseconds R G - Ohms 216 IXYS CORPORATION, All Rights Reserved

6 IXFK36N15T2 IXFX36N15T2 1. Fig. 19. Maximum Transient Thermal Impedance. Fig. 19. Maximium Transient Thermal Impedance.sadgsfgsf. Z (th)jc - K / W Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:F_36N15T2(9V)8-19-9