CM75MX-12A. NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts

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1 Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 97 (7) J L M A E F G M L AA AB C Z AG AH AJ A DETAIL "A" X AD H T U 53 V V P(52-53) R S T (-2) (5-6) (9-) ConvDi W P(-) B(-) ClampDi GB(35) DETAIL "B" L L L L L GUP(49) ESUP(48) U(3-4) GUN(34) N(-) N(-) Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A B C.5 3. D E 4.33±.2.±.5 F G H J L M.6 5. N.22 Dia. 5.5 Dia. P Q R.97±.2 5.±.5 S 2..5 T U. 5. D DETAIL "A" L Y AF FWDi GVP(44) ESVP(43) V(7-8) AE GVN(33) M Q S R B P X N (4 PLACES) GWP(39) ESWP(38) W(2-22) GWN(32) AC TH2 () ES(3) TH () Dimensions Inches Millimeters V W X Y.8 Dia. 2. Dia. Z. 7. AA AB AC.2 3. AD AE.3.8 AF AG.5.5 AH..65 AJ. 7.4 A.47.2 AL AM.6.5 AN.7 Dia. 4.3 Dia. AP. Dia. 2.5 Dia. AL AM AN Y DETAIL "B" AP Description: CIBs are low profile and thermally efficient. Each module consists of a three-phase diode converter section, a three-phase inverter section and a brake circuit. A thermistor is included in the package for sensing the baseplate temperature. 5th Generation CSTBT chips yield low loss. Features: Low Drive Power Low V CE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. is a V (V CES ), 75 Ampere CIB Power Module. Type Current Rating V CES Amperes Volts (x 5) CM 75 2

2 Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 97 (7) Absolute Maximum Ratings, T j = C unless otherwise specified Characteristics Symbol Units Inverter Part IGBT/FWDi Collector-Emitter Voltage (G-E Short) V CES Volts Gate-Emitter Voltage (C-E Short) V GES ±2 Volts Collector Current (DC, T C = 7 C) *2,*4 I C 75 Amperes Collector Current (Pulse) *3 I CRM 5 Amperes Total Power Dissipation (T C = C) *2,*4 P tot Watts Emitter Current *2 I * E 75 Amperes Emitter Current (Pulse) *3 I * ERM 5 Amperes Brake Part IGBT/ClampDi Collector-Emitter Voltage (G-E Short) V CES Volts Gate-Emitter Voltage (C-E Short) V GES ±2 Volts Collector Current (DC, T C = 97 C) *2,*4 I C 5 Amperes Collector Current (Pulse) *3 I CRM Amperes Total Power Dissipation (T C = C) *2,*4 P tot Watts Repetitive Peak Reverse Voltage V RRM Volts Forward Current (T C = C) *2 I F 5 Amperes Forward Current (Pulse) *3 I FRM Amperes Converter Part ConvDi Repetitive Peak Reverse Voltage V RRM 8 Volts Recommended AC Input Voltage E a 22 Volts DC Output Current (3-Phase Full Wave Rectifying, f = Hz,T C = C) *2,*4 I O 75 Amperes Surge Forward Current (Sine Half-wave Cycle Peak Value, f = Hz, Non-repetitive) I FSM 75 Amperes Current Square Time (Value for One Cycle of Surge Current) I 2 t 4 A 2 s Module Isolation Voltage (Charged Part to Baseplate, RMS, f = Hz, AC min.) V ISO Volts Junction Temperature T j -4 ~ +5 C Storage Temperature T stg -4 ~ + C * Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (T j ) should not increase beyond maximum junction temperature (T j(max) ) rating. *3 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. *4 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. IGBT FWDi Converter Diode NTC Thermistor Br WP SN TN UP VP Th RN UN Br VN WN UP VP VN WP UN WN RP SP TP Dimensions in mm (Tolerance: ±mm) 2

3 Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 97 (7) Electrical Characteristics, T j = C unless otherwise specified Inverter Part IGBT/FWDi Collector Cutoff Current I CES V CE = V CES, V GE = V. ma Gate Leakage Current I GES V GE = V GES, V CE = V.5 µa Gate-Emitter Threshold Voltage V GE(th) I C = 7.5mA, V CE = V Volts Collector-Emitter Saturation Voltage V CE(sat) T j = C,, V GE = 5V * Volts T j = C,, V GE = 5V *5.9 Volts, V GE = 5V, Chip *5.6 Volts Input Capacitance C ies 7.5 nf Output Capacitance C oes V CE = V, V GE = V. nf Reverse Transfer Capacitance C res.3 nf Total Gate Charge Q G V CC = V,, V GE = 5V 2 nc Inductive Turn-on Delay Time t d(on) ns Load Turn-on Rise Time t r V CC = V,, V GE = ±5V, ns Switch Turn-off Delay Time t d(off), ns Time Turn-off Fall Time t f ns Emitter-Collector Voltage V EC * T j = C, I E = 75A, V GE = V * Volts T j = C, I E = 75A, V GE = V *5.95 Volts I E = 75A, V GE = V, Chip.9 Volts Reverse Recovery Time t rr * V CC = V, I E = 75A, V GE = ±5V 2 ns Reverse Recovery Charge Q rr *,.8 µc Internal Gate Resistance r g T C = C, Per Switch Ω External Gate Resistance R G Ω * Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 3

4 Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 97 (7) Electrical Characteristics, T j = C unless otherwise specified Brake Part IGBT/ClampDi Collector Cutoff Current I CES V CE = V CES, V GE = V. ma Gate Leakage Current I GES V GE = V GES, V CE = V.5 µa Gate-Emitter Threshold Voltage V GE(th) I C = 5mA, V CE = V Volts Collector-Emitter Saturation Voltage V CE(sat) T j = C, I C = 5A, V GE = 5V * Volts T j = C, I C = 5A, V GE = 5V *5.9 Volts I C = 5A, V GE = 5V, Chip.6 Volts Input Capacitance C ies 9.3 nf Output Capacitance C oes V CE = V, V GE = V. nf Reverse Transfer Capacitance C res.3 nf Total Gate Charge Q G V CC = V, I C = 5A, V GE = 5V 2 nc Internal Gate Resistance r g T C = C Ω Repetitive Reverse Current I RRM V R = V RRM. ma Forward Voltage Drop V F T j = C, I F = 5A * Volts T j = C, I F = 5A *5.95 Volts I F = 5A, Chip.9 Volts External Gate Resistance R G 3 Ω Converter Part Repetitive Peak Reverse Current I RRM V R = V RRM, T j = 5 C 2 ma Forward Voltage Drop V F I F = 75A *5.2.6 Volts NTC Thermistor Part Zero Power Resistance R T C = C * kω Deviation of Resistance R/R R = 493Ω, T C = C * % B Constant B (/5) Approximate by Equation * Power Dissipation P T C = C *4 mw *4 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. *6 B (/5) = In( R )/( ) R 5 T T 5 R ; Resistance at Absolute Temperature T []; T = [ C] = 8.5 [] R 5 ; Resistance at Absolute Temperature T 5 []; T 5 = 5 [ C] = 3.5 [] IGBT FWDi Converter Diode NTC Thermistor Br WP SN TN UP VP Th RN UN Br VN WN UP VP VN WP UN WN RP SP TP Dimensions in mm (Tolerance: ±mm) 4

5 Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 97 (7) Thermal Resistance Characteristics, T j = C unless otherwise specified Thermal Resistance, Junction to Case R th(j-c) Q Per Inverter IGBT *4.44 C/W Thermal Resistance, Junction to Case R th(j-c) D Per Inverter FWDi *4.85 C/W Thermal Resistance, Junction to Case R th(j-c) Q Brake IGBT *4.44 C/W Thermal Resistance, Junction to Case R th(j-c) D Brake ClampDi *4.85 C/W Thermal Resistance, Junction to Case R th(j-c) D Per ConvDi *4. C/W Contact Thermal Resistance R th(c-s) Case to Heatsink, Per Module.5 C/W Thermal Grease Applied *4,*7 Mechanical Characteristics Mounting Torque, M5 Mounting Screws 3 in-lb Module Weight (Typical) Grams Isolation Voltage, (Charged Part to Baseplate, RMS, f = Hz, AC min.) V ISO Volts Flatness of Baseplate *8 e c ± to + µm *4 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *7 Typical value is measured by using thermally conductive grease of λ =.9 [W/(m )]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. IGBT FWDi Converter Diode NTC Thermistor : CONVEX : CONCAVE Y MOUNTING X SIDE MOUNTING SIDE : CONCAVE Br WP SN TN UP VP Th RN UN Br VN WN UP VP VN WP UN WN RP SP TP MOUNTING SIDE + : CONVEX Dimensions in mm (Tolerance: ±mm) 5

6 Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 97 (7) COLLECTOR CURRENT, I C, (AMPERES) OUTPUT CHARACTERISTICS V GE = 2V T j = C VOLTAGE, V CE, (VOLTS) 9 8 SATURATION VOLTAGE, V CE(sat), (VOLTS) SATURATION VOLTAGE CHARACTERISTICS V GE = 5V T j = C T j = C 5 75 COLLECTOR-CURRENT, I C, (AMPERES) 5 SATURATION VOLTAGE, V CE(sat), (VOLTS) SATURATION VOLTAGE CHARACTERISTICS T j = C I C = 5A I C = A GATE-EMITTER VOLTAGE, V GE, (VOLTS) EMITTER CURRENT, I E, (AMPERES) 3 2 FREE-WHEEL DIODE FORWARD CHARACTERISTICS T j = C T j = C EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) CAPACITANCE, C ies, C oes, C res, (nf) CAPACITANCE VS. V CE C ies -2 3 t f C oes t d(off) 2 C res t d(on) - V CC = V V GE = ±5V t r T = C V GE = V j - 2 VOLTAGE, V CE, (VOLTS) COLLECTOR CURRENT, I C, (AMPERES) SWITCHING TIME, (ns) 4 HALF-BRIDGE SWITCHING CHARACTERISTICS 2 SWITCHING TIME, (ns) 3 2 SWITCHING TIME VS. GATE RESISTANCE t d(off) t d(on) t f GATE RESISTANCE, R G, (Ω) t r REVERSE RECOVERY, I rr (A), t rr (ns) 3 2 REVERSE RECOVERY CHARACTERISTICS V CC = V V GE = ±5V T j = C GATE-EMITTER VOLTAGE, V GE, (VOLTS) GATE CHARGE VS. V GE (INVERTER PART) V CC = 2V V CC = V 2 V CC = V V GE = ±5V 4 T j = C I rr t rr 2 2 EMITTER CURRENT, I E, (AMPERES) GATE CHARGE, QG, (nc) 6

7 Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 97 (7) SWITCHING LOSS VS. COLLECTOR CURRENT SWITCHING LOSS VS. GATE RESISTANCE REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT SWITCHING LOSS, E on, E off, (mj/pulse) V CC = V V GE = ±5V T j = C E on E off SWITCHING LOSS, E on, E off, (mj/pulse) 2 V CC = V V GE = ±5V T j = C E on E off REVERSE RECOVERY SWITCHING LOSS, E rr, (mj/pulse) V CC = V V GE = ±5V T j = C E rr - 2 COLLECTOR CURRENT, I C, (AMPERES) - GATE RESISTANCE, R G, (Ω) 2 - EMITTER CURRENT, I E, (AMPERES) 2 REVERSE RECOVERY SWITCHING LOSS, E rr, (mj/pulse) SATURATION VOLTAGE, V CE(sat), (VOLTS) 2 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE V CC = V V GE = ±5V I E = 75A T j = C E rr - GATE RESISTANCE, R G, (Ω) SATURATION VOLTAGE CHARACTERISTICS (BRAE PART - TYPICAL) V GE = 5V T j = C T j = C 5 75 COLLECTOR-CURRENT, I C, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) FORWARD CURRENT, I F, (AMPERES) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Single Pulse T C = C Per Unit Base =.44 C/W -2 (IGBT). C/W.85 C/W (Converter (FWDi) Diode) TIME, (s) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (BRAE PART - TYPICAL) T j = C T j = C FORWARD VOLTAGE, V F, (VOLTS) FORWARD CURRENT, I F, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) FORWARD VOLTAGE, V F, (VOLTS) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (BRAE PART - TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CONVERTER PART - TYPICAL) T j = C T j = C - Single Pulse T C = C Per Unit Base =.44 C/W -2 (IGBT).85 C/W (Clamp Diode) TIME, (s) 7

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