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1 Datasheet of CM2TU-12H - IGBT MOD 6PAC 6V 2A U SER Excellent Integrated System Limited Stocking Distributor Click to view price, real time Inventory, Delivery & Lifecycle Information: Powerex Inc. CM2TU-12H For any questions, you can us directly: sales@integrated-circuit.com
2 Datasheet of CM2TU-12H - IGBT MOD 6PAC 6V 2A U SER CM2TU-12H Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania (724) Six IGBTMOD U-Series Module 2 Amperes/6 Volts E A B F G G H E H E S R 4 - Mounting Holes K L C D T C Measured Point 5 - M5 NUTS P N GuP EuP GuP EuP U GuN EuN GvP EvP Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A B 3.54±.1 9.±.25 C D 3.15±.1.±.25 E F G H J u GwP EwP v GuN EuN w GvN EvN E H E H E J GvP EvP V GvN EvN J GwP EwP W GwN EwN T C Measured M Point GwN EwN N P Q Dimensions Inches Millimeters K L M N.3. P.32.1 Q R.22 Dia. 5.5 Dia. S K Tab Description: Powerex IGBTMOD Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low V CE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM2TU-12H is a 6V (V CES ), 2 Ampere Six- IGBT IGBTMOD Power Module. Current Rating V CES Type Amperes Volts (x 5) CM
3 Datasheet of CM2TU-12H - IGBT MOD 6PAC 6V 2A U SER Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania (724) CM2TU-12H 2 Amperes/6 Volts 9 Absolute Maximum Ratings, T j = 25 C unless otherwise specified Ratings Symbol CM2TU-12H Units Junction Temperature T j -4 to 15 C Storage Temperature T stg -4 to 125 C Collector-Emitter Voltage (G-E SHORT) V CES 6 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±2 Volts Collector Current (T c = 25 C) I C 2 Amperes Peak Collector Current (T j 15 C) I CM 4* Amperes Emitter Current** I E 2 Amperes Peak Emitter Current** I EM 4* Amperes Maximum Collector Dissipation (T j < 15 C) P c 65 Watts Mounting Torque, M5 Main Terminal 31 in-lb Mounting Torque, M5 Mounting 31 in-lb Weight 6 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 25 Volts * Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, T j = 25 C unless otherwise specified Collector-Cutoff Current I CES V CE = V CES, V GE = V 1 ma Gate Leakage Voltage I GES V GE = V GES, V CE = V.5 µa Gate-Emitter Threshold Voltage V GE(th) I C = 15mA, V CE = 1V Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 2A, V GE = 15V, Volts I C = 2A, V GE = 15V, T j = 125 C 2.6 Volts Total Gate Charge Q G V CC = 3V, I C = 2A, V GE = 15V 4 nc Emitter-Collector Voltage* V EC I E = 2A, V GE = V 2.6 Volts * Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating. Dynamic Electrical Characteristics, T j = 25 C unless otherwise specified Input Capacitance C ies 17.6 nf Output Capacitance C oes V CE = 1V, V GE = V 9.6 nf Reverse Transfer Capacitance C res 2.6 nf Resistive Turn-on Delay Time t d(on) V CC = 3V, I C = 2A, 15 ns Load Rise Time t r V GE1 = V GE2 = 15V, 4 ns Switch Turn-off Delay Time t d(off) R G = 3.1, Resistive 3 ns Times Fall Time t f Load Switching Operation 3 ns Diode Reverse Recovery Time t rr I E = 2A, di E /dt = -4A/µs 16 ns Diode Reverse Recovery Charge Q rr I E = 2A, di E /dt = -4A/µs.4 µc Thermal and Mechanical Characteristics, T j = 25 C unless otherwise specified Thermal Resistance, Junction to Case R th(j-c) Q Per IGBT 1/6 Module.19 C/W Thermal Resistance, Junction to Case R th(j-c) D Per Free-Wheel Diode 1/6 Module.35 C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied.15 C/W
4 Datasheet of CM2TU-12H - IGBT MOD 6PAC 6V 2A U SER Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania (724) CM2TU-12H 2 Amperes/6 Volts T j = 25 o C V GE = 2V OUTPUT CHARACTERISTICS VOLTAGE, V CE TRANSFER CHARACTERISTICS V CE = 1V T j = 125 C SATURATION VOLTAGE, V CE(sat) SATURATION VOLTAGE CHARACTERISTICS 5 V GE = 15V 4 T j = 125 C COLLECTOR-CURRENT, I C SATURATION VOLTAGE, V CE(sat) SATURATION VOLTAGE CHARACTERISTICS I C = 4A I C = 2A I C = A EMITTER CURRENT, I E FREE-WHEEL DIODE FORWARD CHARACTERISTICS EMITTER-COLLECTOR VOLTAGE, V EC CAPACITANCE, C ies, C oes, C res, (nf) V GE = V f = 1MHz CAPACITANCE VS. V CE C ies C oes C res VOLTAGE, V CE HALF-BRIDGE SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS GATE CHARGE, V GE SWITCHING TIME, (ns) t d(off) t d(on) t f t r V CC = 3V V GE = ±15V R G = 3.1 Ω T j = 125 C REVERSE RECOVERY TIME, t rr, (ns) di/dt = -4A/µsec I rr t rr EMITTER CURRENT, I E REVERSE RECOVERY CURRENT, I rr I C = 2A V CC = 2V V CC = 3V GATE CHARGE, Q G, (nc) 91
5 Powered by TCPDF ( Powered by TCPDF ( Distributor of Powerex Inc.: Excellent Integrated System Limited Datasheet of CM2TU-12H - IGBT MOD 6PAC 6V 2A U SER Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania (724) CM2TU-12H 2 Amperes/6 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) Single Pulse T C = 25 C 1 Per Unit Base = R th(j-c) =.19 C/W TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) Single Pulse T C = 25 C 1 Per Unit Base = R th(j-c) =.35 C/W TIME, (s)
T C MEASURED POINT G1 E1 E2 G2 W - (4 PLACES) G2 E2 E1 G1
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