Converter - Brake - Inverter Module (CBI 1) Trench IGBT
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- Stuart McDowell
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1 Converter - Brake - Inverter Module (CBI 1) Trench IGBT Preliminary data Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 16 CES = 12 CES = 12 I DM25 = 151 I C25 = 19 I C25 = 43 I FSM = 32 CE(sat) = 2.9 CE(sat) = 2.5 Part name (Marking on product) MUBW45-12T6K E72873 Pin configuration see outlines. Features: High level of integration - only one power semiconductor module required for the whole drive Inverter with Trench IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current Epitaxial free wheeling diodes with hiperfast and soft reverse recovery Industry standard package with iu lated copper base plate and soldering pi for PCB mounting Temperature see included pplication: C motor drives with Input from single or three phase grid Three phase synchronous or asynchronous motor Electric braking operation Package: UL registered Industry standard E1-pack IXYS reserves the right to change limits, test conditio and dimeio. 213 IXYS ll rights reserved 1-6
2 Ouput Inverter T1 - T6 Symbol Definitio Conditio min. typ. max. Unit CES collector emitter voltage T J = 25 C to 15 C 12 GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient I C25 collector current T C = 25 C I C8 T C = 8 C P tot total power dissipation T C = 25 C 16 W CE(sat) collector emitter saturation voltage I C = 45 ; GE = 15 T J = 25 C T J ±2 ± GE(th) gate emitter threshold voltage I C = 1 m; GE = CE T J = 25 C I CES collector emitter leakage current CE = CES ; GE = T J = 25 C T J m m I GES gate emitter leakage current CE = ; GE = ±2 4 n C ies input capacitance CE = 25 ; GE = ; f = 1 MHz 181 pf Q G(on) total gate charge CE = 6 ; GE = 15 ; I C = nc t d(on) t r t d(off) t f turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load T J CE = 6 ; I C = 25 GE = ±15 ; R G = 36 Ω I CM reverse bias safe operating area RBSO; GE = ±15 ; R G = 36 Ω L = 1 μh; clamped induct. load T J CEmax = CES - L S di/dt t SC (SCSO) short circuit safe operating area CE = 9 ; GE = ±15 ; T J R G = 36 Ω; non-repetitive μs thermal resistance junction to case (per IGBT).8 K/W thermal resistance case to heatsink (per IGBT).3 K/W Output Inverter D1 - D6 Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitve reverse voltage T J = 15 C 12 I F25 I F8 forward current T C = 25 C T C = 8 C F forward voltage I F = 45 ; GE = T J = 25 C T J I RM t rr E rec(off) max. reverse recovery current reverse recovery time reverse recovery energy R = 6 di F /dt = -17 /μs T J = 1 C I F = 3 ; GE = thermal resistance junction to case (per diode).9 K/W thermal resistance case to heatsink (per diode).3 K/W T C = 25 C unless otherwise stated μj IXYS reserves the right to change limits, test conditio and dimeio. 213 IXYS ll rights reserved 2-6
3 Brake Chopper T7 Symbol Definitio Conditio min. typ. max. Unit CES collector emitter voltage T J = 25 C to 15 C 12 GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient I C25 collector current T C = 25 C I C8 T C = 8 C P tot total power dissipation T C = 25 C 9 W CE(sat) collector emitter saturation voltage I C = 15 ; GE = 15 T J = 25 C T J ±2 ± GE(th) gate emitter threshold voltage I C =.4 m; GE = CE T J = 25 C I CES collector emitter leakage current CE = CES ; GE = T J = 25 C T J.8.5 m m I GES gate emitter leakage current CE = ; GE = ±2 1 n C ies input capacitance CE = 25 ; GE = ; f = 1 MHz 6 pf Q G(on) total gate charge CE = 6 ; GE = 15 ; I C = 1 45 nc t d(on) t r t d(off) t f turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load T J CE = 6 ; I C = 1 GE = ±15 ; R G = 82 Ω I CM reverse bias safe operating area RBSO; GE = ±15 ; R G = 82 Ω L = 1 μh; clamped induct. load T J CEmax = CES - L S di/dt t SC (SCSO) short circuit safe operating area CE = 72 ; GE = ±15 ; T J R G = 82 Ω; non-repetitive μs thermal resistance junction to case (per IGBT) 1.35 K/W thermal resistance case to heatsink (per IGBT).45 K/W Brake Chopper D7 Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitive reverse voltage T J = 15 C 12 I F25 I F8 forward current T C = 25 C T C = 8 C F forward voltage I F = 15 ; GE = T J = 25 C T J 2. I R reverse current R = RRM T J = 25 C T J.2 I RM t rr max. reverse recovery current reverse recovery time R = 6 ; I F = 1 di F /dt = -4 /μs T J = 1 C m m thermal resistance junction to case (per diode) 2.5 K/W thermal resistance case to heatsink (per diode).85 K/W T C = 25 C unless otherwise stated IXYS reserves the right to change limits, test conditio and dimeio. 213 IXYS ll rights reserved 3-6
4 Input Rectifier Bridge D8 - D13 Symbol Definitio Conditio Maximum RRM max. repetitive reverse voltage 16 I F I DM I FSM Temperature Seor NTC Symbol Definitio Conditio min. typ. max. Unit R 25 resistance T C = 25 C B 25/ kω K Module Symbol Definitio Conditio min. typ. max. Unit T J T JM T stg operating temperature max. virtual junction temperature storage temperature C C C ISOL isolation voltage I ISOL < 1 m; 5/6 Hz 25 ~ M d mounting torque (M4) Nm d S d average forward current max. average DC output current max. surge forward current creep distance on surface strike distance through air Weight 4 g Equivalent Circuits for Simulation sine 18 T C = 8 C rectangular; d = 1 / 3 ; bridge T C = 8 C t = 1 ms; sine 5 Hz T C = 25 C P tot total power dissipation T C = 25 C 11 W Symbol Conditio Characteristic alues min. typ. max. F forward voltage I F = 45 T J = 25 C T J I R reverse current R = RRM T J = 25 C T J m m thermal resistance junction to case (per diode) T J = 25 C 1.1 K/W thermal resistance case to heatsink (per diode).35 K/W mm mm I R Symbol Definitio Conditio min. typ. max. Unit R rectifier diode D8 - D13 T J.9 9 IGBT T1 - T6 T J.95 R 43 free wheeling diode D1 - D6 T J 1.5 R 14 IGBT T7 T J 1.5 R 12 free wheeling diode D7 T J 1.46 R 63 T C = 25 C unless otherwise stated IXYS reserves the right to change limits, test conditio and dimeio. 213 IXYS ll rights reserved 4-6
5 Outline Drawing Dimeio in mm (1 mm =.394 ) Product Marking Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MUBW 45-12T6K MUBW45-12T6K Box IXYS reserves the right to change limits, test conditio and dimeio. 213 IXYS ll rights reserved 5-6
6 5 4 3 T J = 25 C T J GE = T J = 25 C T J T J Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. tranfer characteristics CE = 6 = 25 I C E 4 [] 3 GE = ±15 CE = 6 R G = 39 Ω T J E 4. [] 3.5 GE = ±15 CE = 6 I C = 25 T J Fig.4 Typ. turn-on gate charge Fig. 5 Typ. switching energy vs. collector current Fig. 6 Typ. switching energy vs. gate resistance FRD R i T i R i T i Fig. 7 Typ. traient thermal impedance IGBT I F 3 [] 2 1 T J T J = 25 C Fig. 8 Typ. forward characteristics IXYS reserves the right to change limits, test conditio and dimeio. 213 IXYS ll rights reserved 6-6
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