Standard Rectifier Module

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1 Standard ectifier Module M = 2x 12 I FA = 12A = 1.13 F Phase leg Part number MDD95-12N1B Backside: isolated Features / Advantages: Applications: Package: TO-24AA Package with B ceramic Improved temperature and power cycling Planar passivated chips ery low forward voltage drop ery low leakage current Diode for main rectification For single and three phase bridge configurations Supplies for power equipment Input rectifiers for PWM inverter Battery power supplies Field supply for motors Isolation oltage: 36 ~ Industry standard outline ohs compliant Soldering pins for PCB mounting Base plate: B ceramic educed weight Advanced power cycling 213 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 21372a

2 ectifier Symbol SM M I I Definition = 12 = 12 J T = 15 C atings min. typ. max. 13 F forward voltage drop I = 15 A 1.2 I F T C = 1 C thermal resistance junction to case.26 K/W FA F(MS) max. non-repetitive reverse blocking voltage reverse current I = F Conditions I F = 3 A 15 A I F = 3 A J max. repetitive reverse blocking voltage J F threshold voltage T J = 15 C.75 for power loss calculation only r F slope resistance 1.95 mω thjc thch average forward current MS forward current thermal resistance case to heatsink 18 sine P tot total power dissipation T C = 25 C 481 W I FSM max. forward surge current t = 1 ms; (5 Hz), sine T J = 45 C 2.8 ka t = 8,3 ms; (6 Hz), sine = 3.3 ka t = 1 ms; (5 Hz), sine T J = 15 C 2.38 ka t = 8,3 ms; (6 Hz), sine = 2.57 ka I²t value for fusing t = 1 ms; (5 Hz), sine T J = 45 C 39.2 ka²s t = 8,3 ms; (6 Hz), sine = 38.1 ka²s t = 1 ms; (5 Hz), sine T J = 15 C 28.3 ka²s t = 8,3 ms; (6 Hz), sine = 27.5 ka²s J J T = 125 C C J junction capacitance = 4 ; f = 1 MHz 116 J T J = 15 C Unit µa ma A A K/W J pf 213 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 21372a

3 Package TO-24AA atings Symbol Definition Conditions min. typ. max. Unit I MS MS current per terminal 2 A T J virtual junction temperature C T op operation temperature C T stg storage temperature C Weight M D M T d Spp/App d Spb/Apb ISOL mounting torque 2.5 terminal torque 2.5 creepage distance on surface striking distance through air isolation voltage t = 1 second t = 1 minute terminal to terminal terminal to backside 5/6 Hz, MS; I ISOL 1 ma g Nm Nm mm mm Part Number YYYYWWx FKT Circuit Diagram Date Code Production Code Data Matrix Ordering Standard Part Number Marking on Product Delivery Mode Quantity Code No. MDD95-12N1B MDD95-12N1B Box Equivalent Circuits for Simulation * on die level T J = 15 C I ectifier max threshold voltage.75 max slope resistance *.76 mω 213 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 21372a

4 Outlines TO-24AA IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 21372a

5 ectifier Hz, 8% M 1 5 = sin I FSM T J = 15 C T J = 45 C I 2 t [A 2 s] T J = 45 C T J = 15 C 15 I FAM t [s] Fig. 1 Surge overload current I TSM, I FSM : Crest value, t: duration t [ms] Fig. 2 I 2 t versus time (1-1 ms) T C 2 Fig. 3 Maximum forward current at case temperature 2 thja P T [W] sin I TAM, I FAM T A Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode) 8 thka L.2.3 P tot.4 [W] Circuit B2 2x MDD I dam T A Fig. 6 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature; = resistive load,l = inductive load 213 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 21372a

6 ectifier 1 8 thja [KW] P tot [W] 4 2 Circuit B6 3x MDD I DAM T A Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Z thjc t [s] Fig. 7 Transient thermal impedance junction to case (per diode) thjc for various conduction angles d: d thjc Constants for Z thjc calculation: i thi t i [s] Z thjk t [s] Fig. 8 Transient thermal impedance junction to heatsink (per thyristor) thjk for various conduction angles d: d thjk Constants for Z thjk calculation: i thi t i [s] IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 21372a

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