tentative X2PT IGBT Module 6-Pack + NTC MIXG120W1200TEH V CES = 1200 V I C25 = 186 A V CE(sat) = 1.7 V tentative Part number MIXG120W1200TEH

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1 X2PT IGBT Module CES = 1200 I C2 = 18 CE(sat) = 1.7 -Pack + NTC Part number MIXG120W1200TEH ,, NTC 1 2 9, 0, 1 Features / dvantages: X2PT - 2nd generation Xtreme light Punch Through Tvjm = 17 Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged X2PT design results in: - short circuit rated for 10 μsec. - very low gate charge - low EMI - square 2x Ic Low CE(sat) and low thermal resistance SONIC diode - fast and soft reverse recovery - low operating forward voltage T1 T2 D1 D T3 T4 D3 D pplicatio: C motor drives Solar inverter Medical equipment Uninterruptible power supply ir-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Inductive heating, cookers Pumps, Fa T T D D , 29, 30 23, 24, 2 Package: E3-Pack Isolation oltage: 4300 ~ Industry standard outline RoHS compliant Base plate: Copper internally DCB isolated dvanced power cycling Option: Phase Change Material printed on base plate E72873 Terms & Conditio of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specificatio of our components may not be coidered as an assurance of component characteristics. The information in the valid application- and assembly notes must be coidered. Should you require product information in excess of the data given in this product data sheet or which concer the specific application of your product, please contact the sales office, which is respoible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is respoible for you. Should you intend to use the product in aviation, in health or live endangering or life support applicatio, please notify. For any such application we urgently recoend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditio and dimeio. 201 IXYS ll rights reserved 1 -

2 Inverter IGBT Ratings Symbol Definitio Conditio min. typ. max. CES collector emitter voltage T J = GES GEM I C2 I C80 I C100 max. DC gate voltage max. traient gate emitter voltage collector current T C = 2 T C = 80 T C = 100 P tot total power dissipation T C = 2 2 W CE(sat) collector emitter saturation voltage I C = 100 ; GE = 1 T J = 2 T J = GE(th) gate emitter threshold voltage I C = 4 m; GE = GE T J = 2 7 I CES collector emitter leakage current CE = CES ; GE = 0 T J = 2 T J = 10 2 = ±1 ; R =.8 Ω T = 10 I GES gate emitter leakage current GE = ±20 00 n R G internal gate resistance 3.9 Ω C iss input capacitance nf C oss C rss output capacitance reverse trafer (Miller) capacitance CE = 100 ; GS = 0 ; f = 1 MHz pf pf Q g Q gs Q gd total gate charge gate source charge gate drain (Miller) charge CE = 00 ; GE = 1 ; I C = 100 t d(on) t r t d(off) urn-on delay time current rise time turn-off delay time Inductive switching t f current fall time CE = 00 ; I C = 100 T J = 2 80 E on turn-on energy per pulse GE = ±1 ; R G =.8 Ω (external) E off E rec(off) turn-off energy per pulse reverse recovery losses at turn-off.8 t d(on) t r t d(off) turn-on delay time current rise time turn-off delay time Inductive switching t f current fall time CE = 00 ; I C = 100 T J = E on turn-on energy per pulse GE = ±1 ; R G =.8 Ω (external) 10. E off E rec(off) turn-off energy per pulse reverse recovery losses at turn-off 8.2 RBSO reverse bias safe operating area I CM GE G CEmax = 1200 J 200 SCSO t SC short circuit safe operating area short circuit duration CEmax = 1200 CE = 900 ; GE = ±1 T J = µs I SC short circuit duration non-repetitive 00 R thjc thermal resistance junction to case 0.24 K/W R thjh thermal resistance junction to heatsink with heatsink compound; IXYS test setup 0.38 K/W m m IXYS reserves the right to change limits, test conditio and dimeio. 201 IXYS ll rights reserved 2 -

3 Inverter Diode Ratings Symbol Definitio Conditio min. typ. max. RRM max. repetitive reverse voltage T J = I F2 I F80 I F100 forward current T C = 2 T C = 80 T C = 100 F forward voltage I F = 120 T J = 2 T J = I R reverse current R = RRM T J = 2 * not applicable, see Ices at IGBT T J = 10 * Q RM reverse recovery charge I RM max. reverse recovery current R = 00 -di t rr reverse recovery time F /dt = 2400 /µs I E rec reverse recovery energy F = 120 T J = 2 Q RM reverse recovery charge 1 I RM max. reverse recovery current R = di t rr reverse recovery time F /dt = 2400 /µs T J = I E rec reverse recovery energy F = 120 R thjc thermal resistance junction to case R thjh thermal resistance junction to heatsink with heatsink compound; IXYS test setup * m m µc µc 0.30 K/W K/W Package E3-Pack Ratings Symbol Definitio Conditio min. typ. max. Unit I RMS RMS current per terminal 300 T stg T op T J storage temperature operation temperature virtual junction temperature Weight 270 g M D mounting torque 3 Nm d Spp terminal to terminal creepage distance on surface d Spb terminal to backside 12 d pp terminal to terminal striking distance through air d pb terminal to backside 12 ISOL isolation voltage t = 1 second / 0 Hz, RMS; I t = 1 minute ISOL < 1 m 300 R pin-chip resistance pin to chip = CEsat + 2 R I C resp. = F + 2 R I F 2. mω C P coupling capacity per switch between shorted pi of switch and back side metallization pf XXX XX-XXXXX YYWWx 2D Data Matrix Logo UL Part number Date Code Location Part number M = Module I = IGBT X = XPT IGBT G = Gen 2 / std 120 = Current Rating [] W = -pack 1200 = Reverse oltage [] T = Thermistor EH = E3-Pack Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIXG120W1200TEH MIXG120W1200TEH Box with Phase Change Material MIXG120W1200TEH -PC MIXG120W1200TEH Blister 12 IXYS reserves the right to change limits, test conditio and dimeio. 201 IXYS ll rights reserved 3 -

4 Equivalent Circuits for Simulation *on die level I 0 R 0 IGBT FW Diode 0 max R 0 max threshold voltage slope resistance * T J = 12 mw 0 max R 0 max Temperature Seor NTC Symbol Definitio Conditio min. typ. max. Unit R 2 B 2/0 10 threshold voltage T J = 17 slope resistance * mw resistance temperature coefficient T J = R [Ω] T C [ ] Typ. NTC resistance vs. temperature kw K IXYS reserves the right to change limits, test conditio and dimeio. 201 IXYS ll rights reserved 4 -

5 Outlines E3-Pack ,, NTC 1 2 T D T D T D , 29, T2 D2 13 T4 D4 21 T D , 0, 1 23, 24, 2 IXYS reserves the right to change limits, test conditio and dimeio. 201 IXYS ll rights reserved -