3 1/4. Features / Advantages: Applications: Package: SOT-227B (minibloc)
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1 MCO5-6io hyristor RRM = 6 A = 57A =. Single hyristor Part number MCO5-6io Backside: isolated 3 /4 Features / Advantages: Applications: Package: SO-7B (minibloc) hyristor for line frequency Planar passivated chip Long-term stability Line rectifying 5/6 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control solation oltage: 3 ~ ndustry standard outline RoHS compliant Epoxy meets UL 94- Base plate: Copper internally DCB isolated Advanced power cycling 4 XYS all rights reserved 43a
2 MCO5-6io hyristor Symbol Definition = 6 = 5 C J = 5 C Ratings min. typ. max. 7 forward voltage drop = 5 A = 5 C.7 A (RMS) = = = Conditions A 5 A A C = 8 C 8 sine = 5 C J = 5 C J threshold voltage J = 5 C.88 for power loss calculation only r slope resistance 6 mω R thermal resistance junction to case.7 K/ thjc P tot total power dissipation C = 5 C 7 SM max. forward surge current t = ms; (5 Hz), sine J = 45 C 74 A t = 8,3 ms; (6 Hz), sine R = 8 A t = ms; (5 Hz), sine J = 5 C 63 A t = 8,3 ms; (6 Hz), sine R = 68 A ²t value for fusing t = ms; (5 Hz), sine J = 45 C.74 ka²s t = 8,3 ms; (6 Hz), sine R =.66 ka²s t = ms; (5 Hz), sine J = 5 C.99 ka²s t = 8,3 ms; (6 Hz), sine =.93 ka²s P GM RSM/DSM RRM/DRM P GA average forward current RMS forward current J J = 5 C C J junction capacitance = 4 f = MHz = 5 C 3 max. gate power dissipation t P = 3 µs C = 5 C t = 3 µs average gate power dissipation P J J = 5 C R Unit R J pf (di/dt) cr critical rate of rise of current J = 5 C; f = 5 Hz repetitive, = 5 A t P = µs; di G /dt =.3A/µs; G =.3A; D = ⅔ DRM non-repet., = 5 A (dv/dt) critical rate of rise of voltage = ⅔ =5 C cr max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current = 6 R R thch thermal resistance case to heatsink. D GK = ; method (linear voltage rise) G gate trigger voltage D = 6 J = 5 C J = -4 C DRM J 5 µa ma A A A/µs A/µs /µs.4.6 G gate trigger current D = 6 J = 5 C 8 ma J = -4 C ma GD gate non-trigger voltage D = ⅔ DRM J = 5 C. GD gate non-trigger current 5 ma L latching current t p = µs J = 5 C 45 ma G =.3A; di G /dt =.3A/µs H holding current D = 6 R GK = J = 5 C ma t gd gate controlled delay time D = ½ DRM J = 5 C µs G =.3A; di G /dt =.3A/µs t q turn-off time R = ; = 5A; D = ⅔ DRM J = 5 C 5 µs di/dt = A/µs; dv/dt = 5/µs; t p = µs K/ 4 XYS all rights reserved 43a
3 MCO5-6io Package SO-7B (minibloc) Ratings Symbol Definition Conditions min. typ. max. Unit RMS RMS current ) per terminal 5 A J virtual junction temperature -4 5 C op operation temperature -4 5 C stg storage temperature -4 5 C eight M D M d Spp/App d Spb/Apb SOL mounting torque. terminal torque. creepage distance on surface striking distance through air isolation voltage t = second t = minute ) RMS is typically limited by the pin-to-chip resistance (); or by the current capability of the chip (). n case of () and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. terminal to terminal terminal to backside 5/6 Hz, RMS; SOL ma g Nm Nm mm mm Logo Product Marking Part No. XXXXX Zyyww abcd Assembly Line DateCode Assembly Code Ordering Standard Part Number Marking on Product Delivery Mode Quantity Code No. MCO5-6io MCO5-6io ube 5598 Equivalent Circuits for Simulation * on die level J = 5 C hyristor R max threshold voltage.88 R max slope resistance * 4. mω 4 XYS all rights reserved 43a
4 MCO5-6io Outlines SO-7B (minibloc) 3 /4 4 XYS all rights reserved 43a
5 MCO5-6io hyristor 6 5 Hz, 8% RRM 3 5 R = C 5 C J =5 C SM J = 5 C J = 45 C t 5 [A s] 5 J = 45 C J = 5 C.5..5 [] Fig. Forward characteristics.. t [s] Fig. Surge overload current t [ms] Fig. 3 t versus time (- ms) G [] : GD, J =5 C : G, J = 5 C 3: G, J = -4 C. G 4 3 [ma] 5 6 4: P GA =.5 5: P GM = 6: P GM = Fig. 4 Gate trigger characteristics t gd [μs] typ. Limit J =5 C G [ma] Fig. 5 Gate controlled delay time (A)M C [ C] dc = Fig. 6 Max. forward current at case temperature P (A) [] dc = F(A) R thha amb [ C].8.6 Z thjc [K/] R thi [K/] t i [s] t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature Fig. 8 ransient thermal impedance 4 XYS all rights reserved 43a
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