STARPOWER. Rectifier TD180PBS160C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
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1 STARPOWER SEMICONDUCTOR Rectifier TD180PBS160C5S 1600/180A in one-package General Description STARPOWER Rectifier Power Module provides ultra low conduction loss.they are designed for the applications such as SMPS. Features Low forward voltage drop Small temperature coefficient High surge capacity Low inductance Isolated copper baseplate using DBC technology Typical Applications Active rectifier Half controlled bridge Power supply Equivalent Circuit Schematic 2014 STARPOWER Semiconductor Ltd. 10/18/2014 1/7 Preliminary
2 Absolute Maximum Ratings T C =25 o C unless otherwise noted Diode-rectifier RRM Repetitive Peak Reverse oltage 1600 I O Average Output T C =80 o C 180 A Surge Forward R =0,t p =10ms, 1800 A I FSM I 2 t I 2 t-value R =0,t p =10ms, R =0,t p =10ms,T j =150 o C Thyristor-rectifier R =0,t p =10ms,T j =150 o C RRM Repetitive Peak Reverse oltage 1600 I T On-state T C =80 o C 180 A Surge Forward R =0,t p =10ms, 2500 A I TSM I 2 t (di/dt)cr (dv/dt)cr IGBT-brake R =0,t p =10ms,T j =150 o C I 2 t-value R =0,t p =10ms, R =0,t p =10ms,T j =150 o C Critical Rate of Rise of On-state f=50hz,i G =0.3A,di G /dt=0.3a/μs,t j =125 o C Critical Rate of Rise of On-State oltage D =0.67 RRM,T j =125 o C A 2 s A 2 s 150 A/μs 1000 /μs CES Collector-Emitter oltage 1200 GES Gate-Emitter oltage ±30 I C T C =25 o C T C =100 o C 100 A I CM Pulsed Collector t p =1ms 200 A P D Maximum Power T j =175 o C 519 W Diode-brake RRM Repetitive Peak Reverse oltage 1200 I F Diode Continuous Forward 50 A I FM Diode Maximum Forward t p =1ms 100 A Module T jmax Maximum Junction Temperature(rectifier) 150 Maximum Junction Temperature(brake) 175 o C T jop Operating Junction Temperature -40 to +150 o C T STG Storage Temperature Range -40 to +125 o C ISO Isolation oltage RMS,f=50Hz,t=1min STARPOWER Semiconductor Ltd. 10/18/2014 2/7 Preliminary
3 Rectifier Diode Characteristics T C =25 o C unless otherwise noted F Diode Forward T I oltage F =200A j =25 o C 1.25 T j =150 o C 1.20 (TO) Threshold oltage T j =150 o C 0.86 r T Forward Slope Resistance T j =150 o C 1.7 mω I R Diode Reverse T R = j =25 o C 0.1 RRM T j =150 o C 2.0 ma Thyristor Diode Characteristics T C =25 o C unless otherwise noted T Forward oltage I T =345A, 1.80 I R Diode Reverse T R = j =25 o C 0.10 RRM T j =125 o C 20.0 ma GT Gate Trigger D =12, 2.0 I GT Gate Trigger oltage D =12, 120 ma GD Gate Non-trigger D =0.67 RRM,T j =125 o C 0.25 I H Holding I T =1A, 250 ma I L Latching I G =1.2I GT, 300 ma 2014 STARPOWER Semiconductor Ltd. 10/18/2014 3/7 Preliminary
4 IGBT-brake Characteristics T C =25 o C unless otherwise noted I C =100A, GE =15, CE(sat) Collector to Emitter Saturation oltage I C =100A, GE =15, T j =125 o C 1.95 I C =100A, GE =15, T j =150 o C 2.00 GE(th) Gate-Emitter Threshold oltage I C =4.0mA, CE = GE, I CES Collector Cut-Off CE = CES, GE =0, 5.0 ma I GES Gate-Emitter Leakage GE = GES, CE =0, 400 na R Gint Internal Gate Resistance 2 Ω C ies Input Capacitance 9.90 nf CE =25,f=1MHz, Reverse Transfer C res GE = nf Capacitance Q G Gate Charge GE = μc t d(on) Turn-On Delay Time 280 ns t r Rise Time 54 ns t d(off) Turn-Off Delay Time 313 ns CC =600,I C =100A, t f Fall Time 232 ns R G =4.7Ω, GE =±15, Turn-On Switching E T j =25 o on C 3.50 mj E off Turn-Off Switching 7.35 mj t d(on) Turn-On Delay Time 281 ns t r Rise Time 56 ns t d(off) Turn-Off Delay Time 330 ns CC =600,I C =100A, t f Fall Time 379 ns R G =4.7Ω, GE =±15, Turn-On Switching E T j =125 o on C 5.15 mj E off Turn-Off Switching 11.3 mj t d(on) Turn-On Delay Time 285 ns t r Rise Time 56 ns t d(off) Turn-Off Delay Time 350 ns CC =600,I C =100A, t f Fall Time 390 ns R G =4.7Ω, GE =±15, Turn-On Switching E T j =150 o on C 5.60 mj E off Turn-Off Switching 13.0 mj I SC SC Data t P 10μs, GE =15, T j =150 o C, CC =900, CEM A 2014 STARPOWER Semiconductor Ltd. 10/18/2014 4/7 Preliminary
5 Diode-brake Characteristics T C =25 o C unless otherwise noted I Diode Forward C =50A, GE =0, F I oltage C =50A, GE =0,T j =125 o C 1.65 I C =50A, GE =0,T j =150 o C 1.65 Q r Recovered Charge 3.0 μc Peak Reverse R =600,I F =50A, I RM 46 A Recovery -di/dt=1150a/μs, GE =-15 Reverse Recovery E rec 1.72 mj Energy Q r Recovered Charge 7.2 μc Peak Reverse R =600,I F =50A, I RM 56 A Recovery -di/dt=1150a/μs, GE =-15 Reverse Recovery T j =125 o C E rec 3.15 mj Energy Q r Recovered Charge 8.0 μc Peak Reverse R =600,I F =50A, I RM 59 A Recovery -di/dt=1150a/μs, GE =-15 Reverse Recovery T j =150 o C E rec 3.47 mj Energy Module Characteristics T C =25 o C unless otherwise noted Symbol Parameter Min. Typ. Max. Unit Junction-to-Case (per Diode-rectifier) Junction-to-Case (per Thyristor-rectifier) Junction-to-Case (per IGBT-brake) K/W Junction-to-Case (per Diode-brake) R thjc R thch Case-to-Heatsink (per Diode-rectifier) Case-to-Heatsink (per Thyristor-rectifier) Case-to-Heatsink (per IGBT-brake) Case-to-Heatsink (per Diode-brake) Case-to-Heatsink (per Diode-brake) M Mounting Torque,Screw M N.m G Weight of Module 200 g K/W 2014 STARPOWER Semiconductor Ltd. 10/18/2014 5/7 Preliminary
6 Circuit Schematic ,23,24,25 13,14 1,2,3 4,5,6 7,8,9 10,11,12 26,27,28, ,16,17 Package Dimensions Dimensions in Millimeters STARPOWER Semiconductor Ltd. 10/18/2014 6/7 Preliminary
7 Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved STARPOWER Semiconductor Ltd. 10/18/2014 7/7 Preliminary
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Fast SIGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed
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QID3316 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 1 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E M 1
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Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10 s Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications
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MIXW1TMH Six-Pack XPT IGBT S = 1 2 = 28 (sat) = 1.8 Part name (Marking on product) MIXW1TMH P T1 T3 T D1 D3 D NTC1 G1 G3 G U W NTC2 T2 T4 T6 D2 D4 D6 G2 G4 G6 E 72873 Pin configuration see outlines. EU
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