60 30 Pulsed collector current, t p limited by T jmax I Cpuls 90 Turn off safe operating area V CE 900V, T j 175 C - 90 Diode forward current

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1 Reverse Conducting IGBT with monolithic body diode Features: 1.5V typical saturation voltage of IGBT Trench and Fieldstop technology for 900 V applications offers : very tight parameter distribution high ruggedness, temperature stable behavior easy parallel switching capability due to positive temperature coefficient in V CE(sat) Low EMI Qualified according to JEDEC 1 for target applications Application specific optimisation of inverse diode Pbfree lead plating; RoHS compliant Applications: Microwave Oven Soft Switching Applications for ZCS G PGTO2473 C E Type V CE I C V CE(sat),Tj=25 C T j,max Marking Package 900V 30A 1.5V 175 C H30R90 PGTO2473 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CE 900 V DC collector current I C T C = 25 C T C = 100 C Pulsed collector current, t p limited by T jmax I Cpuls 90 Turn off safe operating area V CE 900V, T j 175 C 90 Diode forward current I F T C = 25 C T C = 100 C Diode pulsed current, t p limited by T jmax I Fpuls 90 Gateemitter voltage V GE ±20 Transient Gateemitter voltage (t p < 5 ms) ±25 Power dissipation, T C = 25 C P tot 454 W Operating junction temperature T j C Storage temperature T stg Soldering temperature, 1.6mm (0.063 in.) from case for 10s 260 A V C 1 JSTD020 and JESD022 Power Semiconductors 1 Rev. 2.2 Nov 08

2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R thjc 0.33 K/W junction case Diode thermal resistance, R thjcd 0.33 junction case Thermal resistance, junction ambient R thja 40 Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. Static Characteristic Collectoremitter breakdown voltage V (BR)CES V GE =0V, I C =0.5mA 900 Collectoremitter saturation voltage V CE(sat) V GE = 15V, I C =30A T j =25 C T j =150 C T j =175 C Diode forward voltage V F V GE =0V, I F =30A T j =25 C T j =150 C T j =175 C Gateemitter threshold voltage V GE(th) I C =700μA,V CE =V GE Zero gate voltage collector current I CES V CE =900V, V GE =0V T j =25 C T j =150 C Gateemitter leakage current I GES V CE =0V,V GE =20V 600 na Unit V μa Power Semiconductors 2 Rev. 2.2 Nov 08

3 Dynamic Characteristic Input capacitance C iss V CE =25V, 2889 pf Output capacitance C oss V GE =0V, 83 Reverse transfer capacitance C rss f=1mhz 79 Gate charge Q Gate V CC =720V, I C =30A 200 nc V GE =15V Internal emitter inductance measured 5mm (0.197 in.) from case L E 13 nh Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions Value min. Typ. Max. IGBT Characteristic Turnoff delay time t d(off) T j =25 C 511 Fall time t f V CC =600V, 24 Turnon energy E on I C =30A, Turnoff energy E off V GE =0/15V, 1.46 Total switching energy E ts R G = 15Ω 1.46 Unit mj Switching Characteristic, Inductive Load, at T j =175 C Parameter Symbol Conditions Value min. Typ. max. IGBT Characteristic Turnoff delay time t d(off) T j =175 C 594 Fall time t f V CC =600V, 46 Turnon energy E on I C =30A, Turnoff energy E off V GE =0/15V, 2.1 Total switching energy E ts R G = 15Ω 2.1 Unit mj Power Semiconductors 3 Rev. 2.2 Nov 08

4 t p =1µs 80A 10µs T C =80 C 20µs IC, COLLECTOR CURRENT 60A 40A 20A I c T C =110 C IC, COLLECTOR CURRENT 10A 1A 50µs 200µs 1ms 0A 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V DC f, SWITCHING FREQUENCY V CE, COLLECTOREMITTER VOLTAGE Figure 1. Collector current as a function of switching freuency for triangular current (E on = 0, hard turnoff) (T j 175 C, D = 0.5, V CE = 600V, V GE = 0/+15V, R G = 15Ω) Figure 2. IGBT Safe operating area (D = 0, T C = 25 C, T j 175 C;V GE =15V) 400W 350W 50A Ptot, DISSIPATED POWER 300W 250W 200W 150W 100W IC, COLLECTOR CURRENT 40A 30A 20A 10A 50W 0W 25 C 50 C 75 C 100 C 125 C 150 C 0A 25 C 75 C 125 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 175 C) T C, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (V GE 15V, T j 175 C) Power Semiconductors 4 Rev. 2.2 Nov 08

5 80A V GE =20V 80A V GE =20V 70A 15V 70A 15V IC, COLLECTOR CURRENT 60A 50A 40A 30A 20A 13V 11V 9V 7V IC, COLLECTOR CURRENT 60A 50A 40A 30A 20A 13V 11V 9V 7V 10A 10A 0A 0.0V 0.5V 1.0V 1.5V 2.0V 2.5V V CE, COLLECTOREMITTER VOLTAGE Figure 5. Typical output characteristic (T j = 25 C) 0A 0.0V 0.5V 1.0V 1.5V 2.0V 2.5V V CE, COLLECTOREMITTER VOLTAGE Figure 6. Typical output characteristic (T j = 175 C) IC, COLLECTOR CURRENT 60A 50A 40A 30A 20A 10A T J =175 C 25 C 0A 0V 2V 4V 6V 8V V GE, GATEEMITTER VOLTAGE Figure 7. Typical transfer characteristic (V CE =20V) VCE(sat), COLLECTOREMITT SATURATION VOLTAGE 2.0V 1.5V 1.0V 0.5V 0.0V I C =60A I C =30A I C =15A 50 C 100 C 150 C T J, JUNCTION TEMPERATURE Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (V GE = 15V) Power Semiconductors 5 Rev. 2.2 Nov 08

6 1000ns 1000ns t d(off) t d(off) t, SWITCHING TIMES 100ns t, SWITCHING TIMES 100ns t f t f 0A 10A 20A 30A 40A 50A 10ns 20Ω 30Ω 40Ω I C, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, T J =175 C, V CE =600V, V GE =0/15V, R G =15Ω, Dynamic test circuit in Figure E) R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, T J =175 C, V CE =600V, V GE =0/15V, I C =30A, Dynamic test circuit in Figure E) t, SWITCHING TIMES 1000ns 100ns t f t d(off) 25 C 50 C 75 C 100 C 125 C 150 C T J, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE =600V, V GE =0/15V, I C =30A, R G =15Ω, Dynamic test circuit in Figure E) VGE(th), GATEEMITT TRSHOLD VOLTAGE 7V 6V 5V 4V 3V max. typ. min. 2V 50 C 0 C 50 C 100 C 150 C T J, JUNCTION TEMPERATURE Figure 12. Gateemitter threshold voltage as a function of junction temperature (I C = 0.7mA) Power Semiconductors 6 Rev. 2.2 Nov 08

7 4.0mJ E, SWITCHING ENERGY LOSSES 3.0mJ 2.0mJ 1.0mJ E off E, SWITCHING ENERGY LOSSES 3.0mJ 2.0mJ 1.0mJ E off 0.0mJ 0A 10A 20A 30A 40A 50A 0.0mJ 20Ω 30Ω 40Ω I C, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, T J =175 C, V CE =600V, V GE =0/15V, R G =15Ω, Dynamic test circuit in Figure E) R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, T J =175 C, V CE =600V, V GE =0/15V, I C =30A, Dynamic test circuit in Figure E) E off 2.0mJ E, SWITCHING ENERGY LOSSES 1.5mJ 1.0mJ 0.5mJ 0.0mJ 25 C 50 C 75 C 100 C 125 C 150 C T J, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE =600V, V GE =0/15V, I C =30A, R G =15Ω, Dynamic test circuit in Figure E) Power Semiconductors 7 Rev. 2.2 Nov 08

8 C iss VGE, GATEEMITTER VOLTAGE 10V 5V 180V 720V c, CAPACITANCE 1nF 100pF C oss C rss 0V 0nC 50nC 100nC 150nC 200nC 250nC Q GE, GATE CHARGE Figure 16. Typical gate charge (I C =30 A) 10pF 0V 10V 20V V CE, COLLECTOREMITTER VOLTAGE Figure 17. Typical capacitance as a function of collectoremitter voltage (V GE =0V, f = 1 MHz) ZthJC, TRANSIENT THERMAL RESISTANCE 10 1 K/W 10 2 K/W D= single pulse R,(K/W) τ, (s) * * * *10 4 R 1 R 2 C 1=τ 1/R 1 C 2=τ 2/R 2 ZthJC, TRANSIENT THERMAL RESISTANCE 10 1 K/W 10 2 K/W D= single pulse R,(K/W) τ, (s) * * * *10 5 R 1 R 2 C 1=τ 1/R 1 C 2=τ 2/R 2 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 18. IGBT transient thermal resistance (D = t p / T) 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 19. Typical Diode transient thermal impedance as a function of pulse width (D=t P /T) Power Semiconductors 8 Rev. 2.2 Nov 08

9 50A 2.0V I F =60A IF, FORWARD CURRENT 40A 30A 20A T J =25 C 175 C VF, FORWARD VOLTAGE 1.5V 1.0V 30A 15A 10A 0.5V 0A 0.0V 0.5V 1.0V 1.5V 2.0V V F, FORWARD VOLTAGE Figure 20. Typical diode forward current as a function of forward voltage 0.0V 50 C 100 C 150 C T J, JUNCTION TEMPERATURE Figure 21. Typical diode forward voltage as a function of junction temperature Power Semiconductors 9 Rev. 2.2 Nov 08

10 Soft Switching Series Power Semiconductors 10 Rev. 2.2 Nov MIN MAX MIN MAX mm Z8B M M PGTO2473

11 i,v di F /dt t =t + t rr S F Q =Q + Q rr S F t rr I F t S t F Q S Q F 10% I rrm t I rrm di 90% I rrm rr /dt V R Figure C. Definition of diodes switching characteristics T(t) j τ 1 r1 τ 2 r2 τ r n n p(t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal euivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Power Semiconductors 11 Rev. 2.2 Nov 08

12 Published by Infineon Technologies AG Munich, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical reuirements, components may contain dangerous substances. For information on the types in uestion, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.2 Nov 08

Soft Switching Series

Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for T Jmax = 175 C Trench and Fieldstop