Features / Advantages: Applications: Package: TO-240AA

Transcription

1 MCC19-8io1B hyristor Module = 2x 8 M I = 18 = 1.7 Phase leg Part number MCC19-8io1B Backside: isolated Features / dvantages: pplications: Package: O-2 hyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded l2o3-ceramic Line rectifying /6 Hz Softstart C motor control Motor control Power converter C power control Lighting and temperature control Isolation oltage: 36 ~ Industry standard outline ohs compliant Soldering pins for PCB mounting Base plate: B ceramic educed weight dvanced power cycling erms and Conditions of Usage he data contained in this product data sheet is exclusively intended for technically trained staff. he user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. he specifications of our components may not be considered as an assurance of component characteristics. he information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. 216 IXYS all rights reserved Data according to IEC 677and per semiconductor unless otherwise specified b

2 MCC19-8io1B hyristor Symbol I I Definition Conditions = 8 = 8 = 2 C J = 12 C atings typ. max. 9 forward voltage drop I = = 2 C 1.6 I SM/DSM M/DM /D (MS) I = I = I = 8 8 C= 8 C = 2 C J = 2 C J threshold voltage J = 12 C.8 for power loss calculation only r slope resistance 18 mω thermal resistance junction to case 1.3 K/W thjc P tot total power dissipation = 2 C 77 W P GM P G J J = 12 C I SM max. forward surge current t = 1 ms; ( Hz), sine J = C t = 8,3 ms; (6 Hz), sine = C J junction capacitance = f = 1 MHz = 2 C 22 max. gate power dissipation t P= 3 µs C = 12 C 1 average gate power dissipation t = 1 ms; ( Hz), sine t = 8,3 ms; (6 Hz), sine J C min t = 3 µs P J = 12 C I²t value for fusing t = 1 ms; ( Hz), sine = C (di/dt) cr average forward current MS forward current critical rate of rise of current 18 sine t = 8,3 ms; (6 Hz), sine t = 1 ms; ( Hz), sine t = 8,3 ms; (6 Hz), sine J = 12 C = = = 12 C J J = Unit J pf J = 12 C; f = Hz t P= 2 µs; di G /dt =. /µs; IG =.; = ⅔ repetitive, I = (dv/dt) critical rate of rise of voltage = ⅔ DM J = 12 C cr max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current /D /D thch thermal resistance case to heatsink.2 K/W GK = ; method 1 (linear voltage rise) G gate trigger voltage = 6 = 2 C D DM J J = - C µ m ²s ²s ²s ²s W W W /µs /µs /µs 1. I G gate trigger current D = 6 J = 2 C 1 m J = - C m GD gate non-trigger voltage = ⅔ J = C.2 D DM 12 I GD gate non-trigger current m I L latching current t p = 1 µs J = 2 C m IG =.; di G /dt =. /µs I H holding current D = 6 GK = J = 2 C 2 m t gd gate controlled delay time = ½ J = 2 C 2 µs D DM IG =.; di G /dt =./µs non-repet., I = t q turn-off time = 1 ; I = 2 ; = ⅔ DM J = 1 C 1 µs di/dt = 1 /µs dv/dt = 2 /µs t p = 2 µs IXYS all rights reserved Data according to IEC 677and per semiconductor unless otherwise specified b

3 MCC19-8io1B Package atings Symbol Definition Conditions min. typ. max. Unit I MS MS current per terminal 2 J virtual junction temperature - 12 C op operation temperature - 1 C Weight M D M dspp/pp dspb/pb O-2 stg storage temperature - 12 C ISOL mounting torque 2. terminal torque 2. creepage distance on surface striking distance through air isolation voltage t = 1 second t = 1 minute terminal to terminal terminal to backside /6 Hz, MS; I ISOL 1 m g Nm Nm mm mm Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. MCC19-8io1B MCC19-8io1B Box Similar Part Package oltage class MCM2P12 O-2-1B 12 MCM3P12 O-2-1B 12 Equivalent Circuits for Simulation * on die level = 12 C I hyristor J max threshold voltage.8 max slope resistance * 16.8 mω 216 IXYS all rights reserved Data according to IEC 677and per semiconductor unless otherwise specified b

4 MCC19-8io1B Outlines O IXYS all rights reserved Data according to IEC 677and per semiconductor unless otherwise specified b

5 MCC19-8io1B hyristor HZ, 8% M 1 3 J = C = 18 sin J = 12 C I SM 3 J = C I 2 t I M 3 [] 2 [ 2 s] [] 2 1 J = 12 C t [s] Fig. 1 Surge overload current I SM : Crest value, t: duration t [ms] Fig. 2 I 2 t versus time (1-1 ms) 1 1 C [ C] Fig. 3 Max. forward current at case temperature 8 thj [KW] : I G, J = 12 C 2: I G, J = 2 C 3: I G, J = - C P [W] 2 I M [] 18 sin [ C] Fig. Power dissipation versus onstate current & ambient temp. (per thyristor) 6 8 G 1 [] 1 2 : P G =. W I GD, J = 12 C : P GM = W 6: P GM = 1 W I G [m] Fig. Gate trigger charact thj [KW] 1 J = 2 C P tot t gd 1 [µs] typ. Limit [W] Circuit B6 3x MCC I dm [] [ C] Fig. 6 hree phase rectifier bridge: Power dissipation versus direct output current and ambient temperature I G [m] Fig. 7 Gate trigger delay time 216 IXYS all rights reserved Data according to IEC 677and per semiconductor unless otherwise specified b

6 MCC19-8io1B hyristor thj [KW] P tot 2 [W] 1 Circuit W3 3x MCC I MS [] [ C] Fig. 8 hree phase C-controller: Power dissipation vs. MS output current and ambient temperature 1 1 Z thjc thjc for various conduction angles d: d thjc t [s] Fig. 9 ransient thermal impedance junction to case (per thyristor) Constants for Z thjc calculation: i thi t i [s] Z thjk t [s] Fig. 1 ransient thermal impedance junction to heatsink (per thyristor) thjk for various conduction angles d: d thjk Constants for Z thjk calculation: i thi t i [s] IXYS all rights reserved Data according to IEC 677and per semiconductor unless otherwise specified b