STARPOWER IGBT GD25FST120L2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
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1 STARPOWER SEMICONDUCTOR IGBT GD2FST2L2S_G8 2V/2A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low V CE(sat) Trench IGBT technology Low switching loss μs short circuit capability V CE(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Isolated heatsink using DBC technology Typical Applications Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic 24 STARPOWER Semiconductor Ltd. /24/24 /9 RXA
2 Absolute Maximum Ratings T C =2 o C unless otherwise noted IGBT-inverter Symbol Description Value Unit V CES Collector-Emitter Voltage 2 V V GES Gate-Emitter Voltage ±3 V I C Collector T C =2 o T C = o C 2 A I CM Pulsed Collector Current t p =ms A P D Maximum Power T j =7 o C 236 W Diode-inverter Symbol Description Value Unit V RRM Repetitive Peak Reverse Voltage 2 V I F Diode Continuous Forward Current 2 A I FM Diode Maximum Forward Current t p =ms A Module Symbol Description Value Unit T jmax Maximum Junction Temperature 7 o C T jop Operating Junction Temperature -4 to + o C T STG Storage Temperature Range -4 to +2 o C V ISO Isolation Voltage RMS,f=Hz,t=min 2 V 24 STARPOWER Semiconductor Ltd. /24/24 2/9 RXA
3 IGBT-inverter Characteristics T C =2 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit I C =2A,V GE =V, T j =2 o C.7 2. V CE(sat) Collector to Emitter Saturation Voltage I C =2A,V GE =V, T j =2 o C.9 V I C =2A,V GE =V, T j = o C 2. V GE(th) Gate-Emitter Threshold Voltage I C =.ma,v CE =V GE, T j =2 o C V I CES Collector Cut-Off Current V CE =V CES,V GE =V, T j =2 o C. ma I GES Gate-Emitter Leakage Current V GE =V GES,V CE =V, T j =2 o C 4 na R Gint Internal Gate Resistance / Ω C ies Input Capacitance 2.4 nf V CE =3V,f=MHz, Reverse Transfer C res V GE =V.8 nf Capacitance Q G Gate Charge V GE =V.8 μc t d(on) Turn-On Delay Time 47 ns t r Rise Time 26 ns t d(off) Turn-Off Delay Time 2 ns V CC =6V,I C =2A, t f Fall Time 337 ns R G =8Ω,V GE =±V, Turn-On Switching E T j =2 o on C.66 mj Turn-Off Switching.64 mj t d(on) Turn-On Delay Time 48 ns t r Rise Time 28 ns t d(off) Turn-Off Delay Time 26 ns V CC =6V,I C =2A, t f Fall Time 4 ns R G =8Ω,V GE =±V, Turn-On Switching E T j =2 o on C.93 mj Turn-Off Switching 2.3 mj t d(on) Turn-On Delay Time 49 ns t r Rise Time 3 ns t d(off) Turn-Off Delay Time 28 ns V CC =6V,I C =2A, t f Fall Time 2 ns R G =8Ω,V GE =±V, Turn-On Switching E T j = o on C 2.2 mj Turn-Off Switching 2.7 mj I SC SC Data t P μs,v GE =V, T j = o C,V CC =9V, V CEM 2V A 24 STARPOWER Semiconductor Ltd. /24/24 3/9 RXA
4 Diode-inverter Characteristics T C =2 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit I Diode Forward F =2A,V GE =V,T j =2 o C V F I V Voltage F =2A,V GE =V,T j =2 o C.7 I F =2A,V GE =V,T j = o C.6 Q r Recovered Charge.4 μc Peak Reverse V R =6V,I F =2A, I RM 32 A Recovery Current -di/dt=8a/μs,v GE =-V Reverse Recovery T j =2 o C.7 mj Energy Q r Recovered Charge 2.3 μc Peak Reverse V R =6V,I F =2A, I RM 38 A Recovery Current -di/dt=8a/μs,v GE =-V Reverse Recovery T j =2 o C.76 mj Energy Q r Recovered Charge 2.6 μc Peak Reverse V R =6V,I F =2A, I RM 39 A Recovery Current -di/dt=8a/μs,v GE =-V Reverse Recovery T j = o C 2.6 mj Energy NTC Characteristics T C =2 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit R 2 Rated Resistance. kω R/R Deviation of R T C = o C,R =493.3Ω - % P 2 Power Dissipation 2. mw R B 2/ B-value 2 =R 2 exp[b 2/ (/T 2 - /(298.K))] 337 K Module Characteristics T C =2 o C unless otherwise noted Symbol Parameter Min. Typ. Max. Unit L CE Stray Inductance 2 nh R CC +EE Module Lead Resistance,Terminal to Chip 4. mω R thjc Junction-to-Case (per IGBT-inverter) Junction-to-Case (per Diode-inverter) K/W R thch Case-to-Heatsink (per IGBT-inverter).8 Case-to-Heatsink (per Diode-inverter).89 K/W R θcs Case-to-Sink.8 K/W F Mounting Force Per Clamp 2 N G Weight of Module 24 g 24 STARPOWER Semiconductor Ltd. /24/24 4/9 RXA
5 4 V GE =V 4 V CE =2V I C [A] o C o C I C [A] o C 2 o C V CE [V] V GE [V] Fig. IGBT-inverter Output Characteristics Fig 2. IGBT-inverter Transfer Characteristics 4 V CC =6V R G =8Ω V GE =±V T j = o C V CC =6V I C =2A V GE =±V T j = o C 3 E on E [mj] 2 E on E [mj] I C [A] R G [Ω] Fig 3. IGBT-inverter Switching vs. I C Fig 4. IGBT-inverter Switching vs. R G 24 STARPOWER Semiconductor Ltd. /24/24 /9 RXA
6 6 Module IGBT 4 I C [A] 3 Z thjh [K/W] 2 R G =8Ω V GE =±V T j = o C. i: r i [K/W]: τ i [s]: V CE [V].... t [s] 4 4 Fig. IGBT-inverter RBSOA Fig 6. IGBT-inverter Transient Thermal Impedance I F [A] 2 2 o C 2 o C E [mj].. V CC =6V R G =8Ω V GE =-V T j = o C V F [V] I F [A] Fig 7. Diode-inverter Forward Characteristics Fig 8. Diode-inverter Switching vs. I F 24 STARPOWER Semiconductor Ltd. /24/24 6/9 RXA
7 2. 2 Diode E [mj]. Z thjh [K/W]. V CC =6V I F =2A V GE =-V T j = o C i: r i [K/W]: τ i [s]: R G [Ω].... t [s] Fig 9. Diode-inverter Switching vs. R G Fig. Diode-inverter Transient Thermal Impedance R [kω] T C [ o C] Fig. NTC Temperature Characteristic 24 STARPOWER Semiconductor Ltd. /24/24 7/9 RXA
8 Circuit Schematic P T T2 G G3 G U V W G2 G4 G6 E'U E'V E'W EU EV EW Package Dimensions Dimensions in Millimeters G W V V W G6 E'W EW G4 G3 G U U P P T T2 EV E'V EU G2 E'U 24 STARPOWER Semiconductor Ltd. /24/24 8/9 RXA
9 Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 24 STARPOWER Semiconductor Ltd. /24/24 9/9 RXA
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