5SNA 2000K StakPak IGBT Module

Transcription

1 Data Sheet, Doc. No. 5SYA SNA K4513 StakPak IGBT Module = 45 V = A Low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High tolerance to uneven mounting pressure Explosion resistant package Maximum rated values 1) Parameter Symbol Conditions min max Unit Collector-emitter voltage S = V, 25 C 45 V DC collector current T C = 85 C, A Peak collector current M t p = 1 ms A Gate-emitter voltage S -2 2 V Total power dissipation P tot T C = 25 C, 28 W DC forward current I F A Peak forward current I FRM t p = 1 ms A Surge current I FSM V R = V,, t p = 1 ms, half-sinewave IGBT short circuit SOA t psc = 34 V, M CHIP 45 V 15 V, 125 C 1 A 1 µs Junction temperature C Junction operating temperature (op) C Case temperature T C C Storage temperature T stg -5 7 C Mounting force 2) F M 6 75 kn 1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC ) For detailed mounting instructions refer to ABB document no. 5SYA 237-2

2 IGBT characteristic values 3) Parameter Symbol Conditions min typ max Unit Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage V (BR)CES = V, = 1 ma, = 25 C 45 V sat = A, = 15 V Collector cut-off current ES = 45 V, = V = 25 C V V = 25 C 1 ma 5 1 ma Gate leakage current I GES = V, = 2 V, -5 5 na Gate-emitter threshold voltage (th) = 32 ma, =, = 25 C V Gate charge Q G = A, = 28 V, = -15 V..15 V 9.6 µc 186 nf Input capacitance C ies Output capacitance C oes VCE = 25 V, VGE = V, f = 1 MHz, Tvj = 25 C 13.4 nf Reverse transfer capacitance C res 3.7 nf Internal gate resistor int.16 Turn-on delay time t d(on) = 25 C 82 ns = 28 V, = A, = 1.8, = 33 nf, 69 ns Rise time t r = 15 V, = 2 nh, inductive load = 25 C 53 ns 54 ns Turn-off delay time t d(off) = 28 V, = A, = 25 C 399 ns = 8.2, = 33 nf, 441 ns Fall time t f = 15 V, = 2 nh, inductive load = 25 C 71 ns 8 ns Turn-on switching energy E on = 1.8, = 33 nf, = ±15 V, = 28 V, = A, = 2 nh, inductive load Turn-off switching energy E off = 8.2, = 33 nf, = ±15 V, = 28 V, = A, = 2 nh, inductive load Short circuit current I SC = 34 V, t psc 1 µs, = 15 V, M CHIP 45 V 3) Characteristic values according to IEC ) Collector-emitter saturation voltage is given at chip level = 25 C 811 mj 996 mj Tvj = 25 C 767 mj Tvj 979 mj Tvj 78 A 2 5SNA K4513 Doc. No. 5SYA

3 Diode characteristic values 5) Parameter Symbol Conditions min typ max Unit Forward voltage 6) V F I F = A Peak reverse recovery current I RM = 25 C V V = 25 C 167 A 195 A Recovered charge Q r = 28 V, I F = A, = 25 C µc µc = 15 V, = 1.8, = 33 nf, Reverse recovery time t rr di/dt = 3.8 ka/µs = 25 C 23 ns = 2 nh, inductive load 234 ns Reverse recovery energy E rec = 25 C 293 mj 5) Characteristic values according to IEC ) Forward voltage is given at chip level 469 mj Package properties Parameter Symbol Conditions min typ max Unit IGBT thermal resistance junction to case Diode thermal resistance junction to case IGBT thermal resistance 2) case to heatsink Diode thermal resistance 2) case to heatsink R th(j-c)igbt.48 K/W R th(j-c)diode.91 K/W R th(c-h)igbt Heatsink flatness : Complete module area < 1 µm.11 K/W Each submodule area < 2 µm R th(c-h)diode Roughness : < 1.6 µm.23 K/W Comparative tracking index CTI 6 2) for detailed mounting instructions refer to ABB Document No. 5SYA Mechanical properties Parameter Symbol Conditions min typ max Unit device clamped x x Dimensions L x W x H Typical mm device unclamped x x 31.5 Clearance distance in air d a according to IEC and EN Surface creepage distance d s according to IEC and EN mm 4 mm Mass m 3745 g 3 5SNA K4513 Doc. No. 5SYA

4 Electrical configuration C (Collector) E (Emitter) G (Gate) AE (Aux. Emitter) Outline drawing 2) Note: all dimensions are shown in millimeters 2) For detailed mounting instructions refer to ABB Document No. 5SYA 239 This is an electrostatic sensitive device; please observe the international standard IEC , chap. IX. This product has been designed and qualified for Industrial Level. 4 5SNA K4513 Doc. No. 5SYA

5 = 25 C 125 C 125 C 25 C = 15 V Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level 19 V 19 V 17 V 17 V 15 V 15 V 13 V 13 V 11 V 11 V 9 V = 25 C 9 V Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level 5 5SNA K4513 Doc. No. 5SYA

6 35 1 E on, E off in J = 28 V = 15 V on = 1.8 off = 8.2 = 33 nf = 2 nh E on E off E on, E off in J = 28 V = A = 15 V = 33 nf = 2 nh E on E off in Fig. 5 Typical switching energies per pulse vs. collector current Fig. 6 Typical switching energies per pulse vs. gate resistor 1 1 = 28 V = A t d(off) 1 = 15 V = 33 nf = 2 nh t d(on), t r, t d(off), t f in µs 1 t f t d(on) = 28 V = 15 V on = 1.8 t d(on), t r, t d(off), t f in µs 1 t d(on) t d(off) t f t r t r off = 8.2 = 33 nf = 2 nh in Fig. 7 Typical switching times vs. collector current Fig. 8 Typical switching times vs. gate resistor 6 5SNA K4513 Doc. No. 5SYA

7 2 = V f OSC = 1 MHz V OSC = 5 mv 15 C ies C in nf C oes 1 C res = 28 V = 34 V Q G in C Fig. 9 Typical capacitances vs. collector-emitter voltage Fig. 1 Typical gate charge characteristics pulse / V = ±15 V = 8.2 chip module. 5 Fig. 11 Turn-off safe operating area (RBSOA) 7 5SNA K4513 Doc. No. 5SYA

8 6 E rec in mj, I RM, Q r in µc 6 5 = 28 V = 15 V on = 1.8 = 33 nf = 2 nh E rec Q r I RM E rec in mj, I RM, Q r in µc 5 = 28 V I F = A = 33 nf = 2 nh = 27 = 12 = 6.8 = 3.9 Q r = 2.2 = 1.8 E rec = 1.5 I RM I F 5 di/dt in ka/µs Fig. 12 Typical reverse recovery characteristics vs. forward current Fig. 13 Typical reverse recovery characteristics vs. di/dt 34 V di/dt 4 ka/µs 25 C I F I R 125 C V F 5 V R Fig. 14 Typical diode forward characteristics chip level Fig. 15 Safe operating area diode (SOA) 8 5SNA K4513 Doc. No. 5SYA

9 1 1 Analytical function for transient thermal impedance: Z th(j-c) in K/kW IGBT, DIODE 1 Z th(j-c) Diode Z th(j-c) IGBT DIODE IGBT Z th (j-c) (t) = n i 1 R i (1- e -t/ i R i in K/kW i in s R i in K/kW i in s i ) t in s Fig. 16 Thermal impedance vs. time 5SNA K4513 Doc. No. 5SYA ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-56 Lenzburg Switzerland Phone: Fax: abbsem@ch.abb.com Internet: We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is excluded.