5SDF 08H6005 PRELIMINARY

Transcription

1 V RRM = 5500 V (AV)M = 585 A SM = A V (T0) = 4.5 V r T = 1.3 mw V DClink = 3300 V Fast Recovery Diode 5SDF 08H6005 PRELIMINARY Patented free-floating technology Industry standard housing Cosmic radiation withstand rating Low on-state and switching losses Optimized for snubberless operation Doc. No. 5SYA Oct. 06 Blocking Parameter Symbol Conditions Value Unit Repetitive peak reverse voltage V RRM f = 50 Hz, t p = 10ms, T vj = 115 C 5500 V Permanent DC voltage for 100 FIT V DC-link Ambient cosmic radiation at sea level in open 3300 V failure rate air. (100% Duty) Permanent DC voltage for 100 FIT V DC-link Ambient cosmic radiation at sea level in open 3900 V failure rate air. (5% Duty) Repetitive peak reverse I RRM V R = V RRM, T vj = 115 C 30 ma Mechanical data Mounting force F m kn Acceleration a Device unclamped 50 m/s 2 Acceleration a Device clamped 200 m/s 2 Weight m 0.83 kg Housing thickness H mm Surface creepage distance D S 30 mm Air strike distance D a 20 mm Note 1 Maximum rated values indicate limits beyond which damage to the device may occur

2 On-state Max. average on-state (AV)M Half sine wave, T C = 70 C 585 A Max. RMS on-state (RMS) 920 A Max. peak non-repetitive surge Limiting load integral Max. peak non-repetitive surge SM t p = 10 ms, T vj = 115 C, V R = 0 V A I 2 t A 2 s SM t p = 1 ms, T vj = 115 C, V R = 0 V A Limiting load integral I 2 t A 2 s On-state voltage V F = 1800 A, T vj = 115 C 6.85 V Threshold voltage V (T0) T vj = 115 C 4.5 V Slope resistance = A 1.3 mω r T Turn-on Peak forward recovery voltage V FRM d /dt = 1000 A/µs, T vj = 115 C 370 V Turn-off Max. decay rate of on-state di/dt crit M = 1800 A, T vj = 115 C V DC-link = 3300 V 440 A/µs Reverse recovery I RM M = 1800 A, V DC-Link = 3300 V 900 A Turn-off energy E rr -d /dt = 440 A/µs, L CL = 300 nh C CL = 10 µf, R CL = 0.65 Ω, T vj = 115 C, D CL = 5SDF 08H J Doc. No. 5SYA Oct. 06 page 2 of 6

3 Thermal Maximum rated values Note 1 Operating junction temperature range T vj C Storage temperature range T stg C Thermal resistance junction to case Thermal resistance case to heatsink R th(j-c) R th(j-c)a R th(j-c)c R th(c-h) R th(c-h) Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled 12 K/kW 24 K/kW 24 K/kW 3 K/kW 6 K/kW Z Analytical function for transient thermal impedance: th(j-c) = n i= 1 R th i (1- e -t/ τ i i R th i (K/kW) τ i (s) ) Fig. 1 Transient thermal impedance (junction to case) vs. time in analytical and graphical form (max. values) Doc. No. 5SYA Oct. 06 page 3 of 6

4 [A] 3000 E rr [J] Tj = 115 C 6 T j = 115 C di F /dt = 440 A/µs V DClink = 3300 V V F [V] Q [A] Fig. 2 Max. on-state voltage characteristics Fig. 3 Diode turn-off energy per pulse vs. turn-off I rr [A] T j = 115 C di F /dt = 440 A/µs V DClink = 3300 V Q [A] Fig. 4 Diode reverse recovery vs. turn-off Fig. 5 Diode Safe Operating Area Doc. No. 5SYA Oct. 06 page 4 of 6

5 V F, V FR d /dt -d /dt V F V F Q rr t fr tfr (typ) 10 µs I RM V R t Fig. 6 General and voltage waveforms L i L CL R S D CL V LC C CL DUT L Load Fig. 7 Test circuit. Doc. No. 5SYA Oct. 06 page 5 of 6

6 Fig. 8 Outline drawing, all dimensions are in millimeters and represent nominal values unless stated otherwise Related documents: Doc. Nr Titel 5SYA SZK SZK 9105 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to for version of documents. ABB Switzerland Ltd Doc. No. 5SYA Oct. 06 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0) Fax +41 (0) abbsem@ch.abb.com Internet