Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 50 Hz, t p = 10 ms, T vj = C f = 5 Hz, t p = 10 ms,

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1 V RSM = 5500 V Rectifier Diode I (AV)M = 3480 A I (RMS) = 5470 A I SM = A V 0 = 0.94 V r = mw 5SDD 33L5500 Patented free-floating silicon technology Very low on-state losses Optimum power handling capability Doc. No. 5SYA Apr 13 Blocking Parameter Symbol Conditions Value Unit Max repetitive peak reverse voltage V RRM Max non-repetitive peak reverse voltage V RSM f = 50 Hz, t p = 10 ms, T vj = C f = 5 Hz, t p = 10 ms, T vj = C 5000 V 5500 V Reverse leakage I RRM V RRM, T vj = 150 C 400 ma Mechanical data Mounting force M kn Acceleration a Device unclamped 50 m/s 2 Acceleration a Device clamped 100 m/s 2 Weight m 1.45 kg Housing thickness H M = 70 kn, T a = 25 C mm Surface creepage distance D S 35 mm Air strike distance D a 14 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur

2 On-state Average on-state I (AV)M 50 Hz, Half sine wave, T C = 90 C 3480 A RMS on-state I (RMS) 5470 A Peak non-repetitive surge t I p = 10 ms, T vj = 150 C, SM A sine half wave, Limiting load integral I 2 t V R = 0 V, after surge A 2 s Peak non-repetitive surge t I p = 10 ms, T vj = 150 C, SM A sine half wave, Limiting load integral I 2 t V R = 0.6*V RRM, after surge A 2 s On-state voltage V I = 5000 A, T vj = 150 C 1.68 V Threshold voltage V 0 T vj = 150 C 0.94 V Slope resistance r I T = A mw Switching Reverse recovery charge Q rr di /dt = -10 A/µs, V R = 200 V µas Reverse recovery I RM I = 4000 A, T vj = 150 C 340 A Doc. No. 5SYA Apr 13 page 2 of 6

3 Thermal Operating junction temperature range T vj C Storage temperature range T stg C Thermal resistance junction to case Thermal resistance case to heatsink R th(j-c) R th(j-c)a R th(j-c)c R th(c-h) R th(c-h) Double-side cooled m = kn Anode-side cooled m = kn Cathode-side cooled m = kn Double-side cooled m = kn Single-side cooled m = kn 7 K/kW 14 K/kW 14 K/kW 1.5 K/kW 3 K/kW Analytical function for transient thermal impedance: Z th(j-c) (t) = n å i= 1 R th i (1- e -t/ t i i R th i (K/kW) t i (s) ) ig. 1 Transient thermal impedance (junction-tocase) vs. time Doc. No. 5SYA Apr 13 page 3 of 6

4 Max. on-state characteristic model: V 25 = A + B I + C ln( I + 1) + D Valid for I = A I Max. on-state characteristic model: V 150 = A + B I + C ln( I + 1) + D Valid for I = A I A 25 B 25 C 25 D 25 A 150 B 150 C 150 D ig. 2 On-state voltage characteristics ig. 3 On-state voltage characteristics ig. 4 On-state power dissipation vs. mean on-state ig. 5 Max. permissible case temperature vs. mean on-state Doc. No. 5SYA Apr 13 page 4 of 6

5 ig. 6 Reverse recovery charge vs. decay rate of onstate ig. 7 Peak reverse recovery vs. decay rate of on-state Doc. No. 5SYA Apr 13 page 5 of 6

6 ig. 8 Device Outline Drawing Related documents: 5SYA 2020 Design of RC-Snubbers for Phase Control Applications 5SYA 2029 High Power Rectifier Diodes 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors 5SYA 2048 ield Measurements on High Power Press-Pack Semiconductors 5SYA 2051 Voltage Ratings of High Power Semiconductors 5SZK 9104 Specification of environmental class for pressure contact diodes, PCTs and GTO, Storage 5SZK 9105 Specification of environmental class for pressure contact diodes, PCTs and GTO, Transportation 5SZK 9115 Specification of environmental class for presspack Diodes, PCTs and GTOs, Operation (Industry) 5SZK 9116 Specification of environmental class for presspack Diodes, PCTs and GTOs, Operation (Traction) Please refer to for version of documents. ABB Switzerland Ltd Doc. No. 5SYA Apr 13 Semiconductors abrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0) ax +41 (0) abbsem@ch.abb.com Internet