5SMY 12H1280. IGBT-Die V CE = 1200 V I C = 57 A. Die size: 9.1 x 9.1 mm

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1 V CE = 12 V I C = 57 A IGBT-Die 5SMY 12H128 Die size: 9.1 x 9.1 mm Doc. No. 5SYA Ultra low loss thin IGBT die Highly rugged SPT + design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values 1) Parameter Symbol Conditio min max Unit Collector-emitter voltage VCES VGE = V, Tvj ³ 25 C 12 V DC collector current IC 57 A Peak collector current ICM Limited by Tvjmax 114 A Gate-emitter voltage VGES -2 2 V IGBT short circuit SOA Junction temperature tpsc VCC = 9 V, VCEM 12 V 1 µs VGE 15 V, Tvj 125 C Tvj 175 Tvj(op) ) Maximum rated values indicate limits beyond which damage to the device may occur per IEC C

2 5SMY 12H128 IGBT characteristic values 2) Parameter Symbol Conditio min typ max Unit Collector (-emitter) breakdown voltage Collector-emitter saturation voltage V(BR)CES VGE = V, IC = 1 ma, Tvj = 25 C 12 V VCE sat IC = 57 A, VGE = 15 V Collector cut-off current ICES VCE = 12 V, VGE = V Tvj = 25 C V Tvj = 125 C 2.1 V Tvj = 25 C 1 µa Tvj = 125 C 5 µa Gate leakage current IGES VCE = V, VGE = ±2 V, Tvj = 125 C -2 2 na Gate-emitter threshold voltage VGE(TO) IC = 2 ma, VCE = VGE, Tvj = 25 C 5 7 V Gate charge Qge IC = 57 A, VCE = 6 V, VGE = V 611 nc Input capacitance Cies 4.29 VCE = 25 V, VGE = V, f = 1 MHz, Output capacitance Coes.3 Tvj = 25 C Reverse trafer capacitance Cres.2 Internal gate resistance RGint 1 W Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current 2) Characteristic values according to IEC td(on) tr td(off) tf Eon Eoff ISC VCC = 6 V, IC = 57 A, RG = 18 W, VGE = ±15 V, Ls = 6 nh, inductive load VCC = 6 V, IC = 57 A, RG = 18 W, VGE = ±15 V, Ls = 6 nh, inductive load VCC = 6 V, IC = 57 A, VGE = ±15 V, RG = 18 W, Ls = 6 nh, inductive load, FWD: 5SLY 12E12 VCC = 6 V, IC = 57 A, VGE = ±15 V, RG = 18 W, Ls = 6 nh, inductive load tpsc 1 μs, VGE = 15 V, Tvj = 125 C, VCC = 9 V, VCEM 12 V Tvj = 25 C 32 Tvj = 125 C 345 Tvj = 25 C 7 Tvj = 125 C 7 Tvj = 25 C 485 Tvj = 125 C 56 Tvj = 25 C 55 Tvj = 125 C 7 Tvj = 25 C 7.7 Tvj = 125 C 1.1 Tvj = 25 C 3.5 Tvj = 125 C 5.8 nf mj mj 27 A Doc. No. 5SYA page 2 of 6

3 5SMY 12H128 Mechanical properties Parameter Dimeio Overall die L x W 9.1 x 9.1 mm exposed front metal Unit L x W (except gate pad) 7.57 x 7.56 mm gate pad L x W 1.12 x 1.14 mm thickness 14 ± 2 µm Metallization 3) front (E) AlSi1 4 µm back (C) Al / Ti / Ni / Ag 1.2 µm 3) For assembly itructio refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 233. Form of delivery Description Uawn 6" wafer die Sawn 6" wafer die (on blue tape) Part number 5SMY 76H128 5SMY 86H128 Outline drawing 1.12± G 9.8± Emitter ± ±.5 Note: all dimeio are shown in mm This is an electrostatic seitive device, please observe the international standard IEC , Chap. IX. This product has been designed and qualified for Industrial Level. Doc. No. 5SYA page 3 of 6

4 5SMY 12H VCE = 2 V C IC [A] C IC [A] C 25 C VGE = 15 V VCE [V] VGE [V] Fig. 1 Typical on-state characteristics Fig. 2 Typical trafer characteristics VCC = 6 V RG = 18 ohm VGE = ±15 V Tvj = 125 C Lσ = 6 nh VCC = 6 V I C = 57 A VGE = ±15 V Tvj = 125 C Lσ = 6 nh Eon Eon, Eoff [mj] Eon Eon, Eoff [mj] Eoff 2 4 Eoff IC [A] RG [ohm] Fig. 3 Typical switching characteristics vs collector current Fig. 4 Typical switching characteristics vs gate resistor Doc. No. 5SYA page 4 of 6

5 5SMY 12H VCC = 6 V V CC = 9 V C ies VGE = V fosc = 1 MHz VOSC = 5 mv VGE [V] 1 C [nf] 1 5 C oes I C = 57 A T vj = 25 C Q g [µc].1 C res Vce[V] Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs collector-emitter voltage 2.5 V CC 1 V, T vj(op) = 15 C V GE = ±15 V, R G = 18 ohm 2. ICpulse / IC V CE [V] Fig. 7 Safe operating area (RBSOA) ABB Semiconductors AG reserves the right to change specificatio without notice. Doc. No. 5SYA of 6

6 5SMY 12H128 This is an electrostatic seitive device, please observe the international standard IEC , chap. IX. This product has been designed and qualified for Industrial Level. Related documents: 5SYA 245 Thermal runaway during blocking 5SYA 259 Applying IGBT and Diode dies 5SYA 293- Thermal design of IGBT Modules We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilisation of this document or parts thereof for commercial purposes without our prior written coent is forbidden. Any liability for use of our products contrary to the itructio in this document is exclude ABB Switzerland Ltd Doc. No. 5SYA Semiconductors Fabrikstrasse 3 CH-56 Lenzburg, Switzerland Telephone +41 () Fax +41 () abbsem@ch.abb.com Internet