Rectifier Diode 5SDD 11D2800

Transcription

1 V RSM = 3 V I F(AV)M = 1285 A I F(RMS) = 219 A I FSM = A V F =.933 V r F =.242 mw Rectifier Diode 5SDD 11D28 Doc. No. 5SYA1166- Okt. 3 Very low on-state losses Optimum power handling capability Blocking Parameter Symbol Conditions Value Unit Repetetive peak reverse voltage V RRM f = 5 Hz, t p = 1ms, T j = C 28 V Non - repetetive peak reverse voltage V RSM f = 5 Hz, t p = 1ms, T j = C 3 V Max. (reverse) leakage current I RRM V RRM, Tj = 16 C 3 ma Mechanical data Mounting force F M kn Acceleration a Device unclamped 5 m/s 2 Acceleration a Device clamped 1 m/s 2 Weight m.3 kg Housing thickness H F M = 1 kn, T a = 25 C mm Surface creepage distance D S 33 mm Air strike distance D a 18 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur

2 5SDD 11D28 On-state Max. average on-state current I F(AV)M 5 Hz, Half sine wave, T C = 85 C 1285 A Max. RMS on-state current I F(RMS) 219 A Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral I FSM t p = 1 ms, T j = 16 C, A V R = V I 2 t A 2 s I FSM t p = 8.3 ms, T j = 16 C, A V R = V I 2 t A 2 s On-state voltage V F I F = 15 A, T j = 16 C 1.3 V Threshold voltage V (T) T j = 16 C.933 V Slope resistance I T = A.242 mω r T Switching Recovery charge Q rr di F /dt = -3 A/µs, V R = 1 V I FRM = 1 A, T j = 16 C 22 3 µas Doc. No. 5SYA1166- Okt. 3 page 2 of 6

3 5SDD 11D28 Thermal Operating junction temperature range T vj C Storage temperature range T stg C Thermal resistance junction to case Thermal resistance case to heatsink R th(j-c) R th(j-c)a R th(j-c)c R th(c-h) R th(c-h) Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled 32 K/kW 5 K/kW 88 K/kW 8 K/kW 16 K/kW Z Analytical function for transient thermal impedance: th(j-c) (t) = n i= 1 R th i (1- e -t/ τ i i R th i (K/kW) τ i (s) ) Fig. 1 Transient thermal impedance junction-tocase. Doc. No. 5SYA1166- Okt. 3 page 3 of 6

4 5SDD 11D28 I F ( A ) C 16 C I FSM ( ka ) I FSM 25 C 16 C i 2 dt 25 C 3 2,5 2 i 2 dt (1 6 A 2 s) C 1, , V F ( V ) 1 1 t ( ms ) 1 Fig. 2 Max. on-state characteristics. Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, V R = V PT ( W ) P T ( W ) 25 2 ψ = Fig. 4 Forward power loss vs. average forward current, sine waveform, f = 5 Hz Fig. 5 Forward power loss vs. average forward current, square waveform, f = 5 Hz Doc. No. 5SYA1166- Okt. 3 page 4 of 6

5 5SDD 11D28 TC ( C ) TC ( C ) ψ = Fig. 6 Max. case temperature vs aver. forward current, sine waveform, f = 5 Hz 1 Fig. 7 Max. case temperature vs aver. forward current, square waveform, f = 5 Hz 1 Qrr ( µc ) IrrM ( A ) 1 max 1 max min min di F /dt ( A/µs ) di F /dt ( A/µs ) 1 Fig. 8 Reverse recovery charge vs. di F /dt, I F = 1 A; T j = T jmax, limit values Fig. 9 Peak reverse recovery current vs. di F /dt, I F = 1 A; T j = T jmax, limit values Doc. No. 5SYA1166- Okt. 3 page 5 of 6

6 5SDD 11D28 Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Related application notes: Doc. Nr Titel 5SYA 22 5SYA 229 Design of RC-Snubbers for Phase Control Applications Designing Large Rectifiers with High Power Diodes 5SYA 236 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to for actual versions. ABB Switzerland Ltd Doc. No. 5SYA1166- Okt. 3 Semiconductors Fabrikstrasse 3 CH-56 Lenzburg, Switzerland Telephone +41 () Fax +41 () abbsem@ch.abb.com Internet