ABB 5STP12F4200 Control Thyristor datasheet

Transcription

1 ABB 5STP12F4200 Control Thyristor datasheet Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate ManualLib.com collects and classifies the global product instrunction manuals to help users access anytime and anywhere, helping users make better use of products.

2 V DRM = 4200 V Phase Control Thyristor I T(AV)M = 1150 A I T(RMS) = 1800 A I TSM = A V T0 = 0.95 V r T = mw 5STP 12F4200 Doc. No. 5SYA Nov. 13 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking Parameter Symbol Conditions 5STP 12F4200 Unit Max repetitive peak forward and reverse blocking voltage V DRM, V RRM f = 50 Hz, t p = 10 ms, T vj = C, Note V Critical rate of rise of commutating voltage dv/dt crit Exp. to 0.67 V DRM, T vj = 125 C 1000 V/µs Forward leakage current I DRM V DRM, T vj = 125 C 200 ma Reverse leakage current I RRM V RRM, T vj = 125 C 200 ma Note 1: Voltage de-rating factor of 0.11% per C is applicable for T vj below +5 C. Mechanical data Mounting force F M kn Acceleration a Device unclamped 50 m/s 2 Acceleration a Device clamped 100 m/s 2 Weight m 0.6 kg Housing thickness H F M = 22 kn, T a = 25 C mm Surface creepage distance D S 25 mm Air strike distance D a 14 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur

3 On-state Average on-state current I T(AV)M Half sine wave, Tc = 70 C 1150 A RMS on-state current I T(RMS) 1800 A Peak non-repetitive surge I current TSM t p = 10 ms, T vj = 125 C, A sine half wave, Limiting load integral I 2 t V D = V R = 0 V, after surge A 2 s Peak non-repetitive surge I current TSM t p = 10 ms, T vj = 125 C, sine half wave, A Limiting load integral I 2 t V R = 0.6 V RRM, after surge A 2 s On-state voltage V T I T = 2000 A, T vj = 125 C 2.1 V Threshold voltage V (T0) 0.95 V I T = 600 A A, T vj = 125 C Slope resistance r T mw Holding current I H Tvj = 25 C 80 ma Tvj = 125 C 60 ma Latching current I L Tvj = 25 C 500 ma Tvj = 125 C 200 ma Switching Critical rate of rise of on-state current Circuit-commutated turn-off time di/dt crit T vj = 125 C, I TRM = 2000 A, V D 0.67 V DRM, I FG = 2 A, t r = 0.5 µs Cont. f = 50 Hz Cont. f = 1 Hz t q T vj = 125 C, I TRM = 2000 A, V R = 200 V, di T /dt = -1.5 A/µs, V D 0.67 V DRM, dv D /dt = 20 V/µs 100 A/µs 1000 A/µs 900 µs Reverse recovery charge Q rr T vj = 125 C, I TRM = 2000 A, µas Reverse recovery current I RM V R = 200 V, di T /dt = -1.5 A/µs A Gate turn-on delay time t gd T vj = 25 C, V D = 0.4 V RM, I FG = 2 A, t r = 0.5 µs 2 µs Doc. No. 5SYA Nov. 13 page 2 of 7

4 Triggering Peak forward gate voltage V FGM 12 V Peak forward gate current I FGM 10 A Peak reverse gate voltage V RGM 10 V Average gate power loss P G(AV) see Fig. 7 W Gate-trigger voltage V GT Tvj = 25 C 2.6 V Gate-trigger current I GT Tvj = 25 C 400 ma Gate non-trigger voltage V GD V D = 0.4 V DRM, T vjmax = 125 C 0.3 V Gate non-trigger current I GD V D = 0.4 V DRM, T vjmax = 125 C 10 ma Thermal Operating junction temperature range T vj 125 C Storage temperature range T stg C Thermal resistance junction to case, Thermal resistance case to heatsink, R th(j-c) R th(j-c)a R th(j-c)c R th(c-h) R th(c-h) Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled 17 K/kW 33 K/kW 35 K/kW 4 K/kW 8 K/kW Analytical function for transient thermal impedance: Z th(j-c) (t) = n å i= 1 R i (1- e -t/ i R i (K/kW) t i (s) t i ) Fig. 1 Transient thermal impedance (junction-tocase) vs. time Doc. No. 5SYA Nov. 13 page 3 of 7

5 Fig. 2 On-state voltage characteristics Fig. 3 On-state voltage characteristics T vj = 125 C, 10 ms half sine Fig. 4 On-state power dissipation vs. mean on-state current, turn-on losses excluded Fig. 5 Max. permissible case temperature vs. mean on-state current, switching losses ignored Doc. No. 5SYA Nov. 13 page 4 of 7

6 I G (t) I GM» 2..5 A 100 % 90 % I GM I Gon di G /dt t r t p (I GM ) ³ 1.5 I GT ³ 2 A/ms 1 ms» ms di G /dt I Gon 10 % t r tp (IGM ) t p (I Gon ) t Fig. 6 Recommended gate current waveform Fig. 7 Max. peak gate power loss Fig. 8 Reverse recovery charge vs. decay rate of on-state current Fig. 9 Peak reverse recovery current vs. decay rate of on-state current Doc. No. 5SYA Nov. 13 page 5 of 7

7 Turn-on and Turn-off losses 5STP 12F4200 Fig. 10 Turn-on energy, half sinusoidal waves Fig. 11 Turn-on energy, rectangular waves Fig. 12 Turn-off energy, half sinusoidal waves Fig. 13 Turn-off energy, rectangular waves -di T /dt I T (t) I T (t), V(t) Total power loss for repetitive waveforms: P = P + W f + W TOT T on off where f Q rr -I RRM V(t) t -V 0 T 1 PT = IT V T ò 0 T ( I T ) dt -dv/dt com -V RRM Fig. 14 Current and voltage waveforms at turn-off Fig. 15 Relationships for power loss Doc. No. 5SYA Nov. 13 page 6 of 7

8 H Fig. 16 Device Outline Drawing Related documents: 5SYA 2020 Design of RC-Snubber for Phase Control Applications 5SYA 2049 Voltage definitions for phase control thyristors and diodes 5SYA SYA SYA SZK SZK 9105 Voltage ratings of high power semiconductors Gate-Drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to for current version of documents. ABB Switzerland Ltd Doc. No. 5SYA Nov. 13 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0) Fax +41 (0) abbsem@ch.abb.com Internet