ST1230C..K SERIES 1745A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25194 rev. B 01/00. case style A-24 (K-PUK)

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1 ST1230C..K SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case A-24 (K-PUK) High profile hockey-puk 1745A Typical Applications DC motor controls Controlled DC power supplies AC controllers case style A-24 (K-PUK) Major Ratings and Characteristics Parameters ST1230C..K Units I T(AV) 1745 T hs 55 C I T(RMS) 3200 T hs 25 C I Hz 330 Hz 35 A I 2 Hz 5615 KA2 Hz 5126 KA 2 s V DRM /V RRM 0 to 10 V t q typical 200 µs T J - to 125 C 1

2 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM, max. repetitive V RSM, maximum non- I DRM /I RRM max. Type number Code peak and off-state voltage repetitive peak T J max V V ma ST1230C..K On-state Conduction I T(AV) Max. average on-state current 1745 (710) A 1 conduction, half sine Heatsink temperature 55 (85) C double side (single side) cooled I T(RMS) Max. RMS on-state current C heatsink temperature double side cooled I TSM Max. peak, one-cycle 330 t = 10ms No voltage non-repetitive surge current 35 A t = 8.3ms reapplied t = 10ms % V RRM 2 t = 8.3ms reapplied Sinusoidal half wave, I 2 t Maximum I 2 t for fusing 5615 t = 10ms No voltage Initial T J max t = 8.3ms reapplied KA 2 s 3971 t = 10ms % V RRM 3625 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing 561 KA 2 s t = 0.1 to 10ms, no voltage reapplied V T(TO)1 Low level value of threshold 0.93 voltage V (16.7% x π x I T(AV) < I < π x I T(AV) ), T J max. V T(TO)2 High level value of threshold voltage 1.02 (I > π x I T(AV) ),T J max. r t1 Low level value of on-state 0.17 slope resistance mω (16.7% x π x I T(AV) < I < π x I T(AV) ), T J max. r t2 High level value of on-state slope resistance 0.16 (I > π x I T(AV) ),T J max. V TM Max. on-state voltage 1.62 V I = 00A, T pk J max, t = 10ms sine pulse p I H Maximum holding current 0 I L Typical latching current 0 ma T J = 25 C, anode supply 12V resistive load 2

3 Switching di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, t r 1µs 0 A/µs of turned-on current T J max, anode voltage % V DRM Gate current 1A, di g /dt = 1A/µs t d Typical delay time 1.9 V d = 0.67% V DRM, T J µs = 25 C I TM = 5A, T J max, di/dt = A/µs, V R = V t Typical turn-off time 200 q dv/dt = 20V/µs, Gate 0V Ω, t = 0µs p Blocking dv/dt I RRM I DRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current 0 V/µs T J max. linear to % rated V DRM ma T J max, rated V DRM /V RRM applied Triggering P GM Maximum peak gate power 16 T J max, t 5ms p P G(AV) Maximum average gate power 3 W T J max, f = Hz, d% = I GM Max. peak positive gate current 3.0 A T J max, t 5ms p +V GM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5.0 V T J max, t p 5ms TYP. MAX. I GT T J = - C DC gate current required 200 ma T J = 25 C to trigger T J = 125 C T J = - C V GT DC gate voltage required to trigger V T J = 25 C T J = 125 C I GD DC gate current not to trigger 10 ma V GD DC gate voltage not to trigger 0.25 V T J max Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied 3

4 Thermal and Mechanical Specification T J Max. operating temperature range - to 125 T stg Max. storage temperature range - to 1 C R thj-hs Max. thermal resistance, DC operation single side cooled K/W junction to heatsink DC operation double side cooled R thc-hs Max. thermal resistance, DC operation single side cooled K/W case to heatsink DC operation double side cooled F Mounting force, ± 10% 2 N (20) (Kg) wt Approximate weight 425 g Case style A-24 (K-PUK) See Outline Table R thj-hs Conduction (The following table shows the increment of thermal resistence R thj-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Single Side Double Side Single Side Double Side T J max K/W Ordering Information Table Device Code ST C 16 K Thyristor 2 - Essential part number 3-0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x = V RRM (See Voltage Rating Table) 6 - K = Puk Case A-24 (K-PUK) 7-0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 0V/µsec (Standard selection) L = 0V/µsec (Special selection) 4

5 Outline Table 1 (0.04) MIN. TWO PLACES 47.5 (1.87) DIA. MAX. TWO PLACES (1.08) M AX. PIN RECEPTACLE AMP (2.6) DIA. MAX (2.9) DIA. MA X (0.2) NOM. 20 ± 5 44 (1.73) Case Style A-24 (K-PUK) 2 HOLES DIA. 3.5 (0.14) x 2.1 (0.1) DEEP CREPAGE DESTANCE (1.137) MIN. STRIKE DISTANCE (0.8) MIN. All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) (Single Side Cooled) R thj-hs(dc) = K/W Conduction Angle (Single Side Cooled) R thj-hs(dc) = K/W Conduction Period 30 1 DC Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 5

6 ST1230C..KSeries Maximum Average On-state Power Loss (W) Peak Half Sine Wave On-state Current (A) (Double Side Cooled) R thj-hs(dc) = K/W Conduction Angle Fig. 3 - Current Ratings Characteristics 1 RMS Limit Conduction Angle 0 0 T J = 125 C Fig. 5- On-state Power Loss Characteristics At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J= 125 Hz Hz 0.0 s Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 4 - Current Ratings Characteristics Fig. 6- On-state Power Loss Characteristics Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6 Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) (Double Side Cooled) R thj-hs(dc) = K/W Conduction Period 30 1 DC DC 1 RMS Limit Conduction Period T = 125 C J Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained Initial T J = 125 C No Voltage Reapplied Rated V RRMReapplied Pulse Train Duration (s)

7 00 Instantaneous On-state Current (A) 0 T = 25 C J T = 125 C J Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics Transient Thermal Impedance Z (K/W) thj-hs Steady State Value R thj-hs = K/W (Single Side Cooled) R thj-hs = K/W (Double Side Cooled) (DC Operation) Square Wave Pulse Duration (s) Fig Thermal Impedance Z thj-hs Characteristics Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs 10 1 VGD Tj=125 C Tj=25 C (b) Tj=- C IGD Device: Frequency Limited by PG(AV) (a) Instantaneous Gate Current (A) Fig Gate Characteristics (1) PGM = 16W, tp = 4ms (2) PGM = 30W, tp = 2ms (3) PGM = W, tp = 1ms (1) (2) (3) 7