1000PT Series. Phase Control Thyristors (Hockey PUK Version), 1000A FEATURES TYPICAL APPLICATIONS. RoHS. Nell High Power Products.

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1 0PT Series Phase Control Thyristors (Hockey PUK ersion), 0 FETURES Center amplifying gate Metal case with ceramic insulator lnternational standard case TO-0C (B-PUK) Nell s C-type Capsule Compliant to Designed and qualified for industrial level TYPICL PPLICTIONS DC motor controls Controlled DC power supplies C controllers TO-2C (B-PUK) (Nell s C-type Capsule) PRODUCT SUMMRY I T() 0 MOR RTINGS ND CHRCTERISTICS PRMETER I T() I T(RMS) I TSM 2 I t DRM/RRM T T hs HZ HZ HZ HZ TEST CONDITIONS Double side cooled, single phase, Hz, half-sine wave T hs LUES to 00 t q Typical 1 - to UNIT 2 k s µs ELECTRICL SPECIFICTIONS OLTGE RTINGS TYPE NUMBER OLTGE CODE DRM/ RRM, MXIMUM REPETITIE PEK ND OFF-STTE OLTGE RSM, MXIMUM NON-REPETITIE PEK REERSE OLTGE l DRM/l RRM, MXIMUM T T = T MXIMUM m PTxxC Page 1 of 6

2 0PT Series FORWRD CONDUCTION PRMETER SYMBOL TEST CONDITIONS LUES UNIT Maximum average current at heatsink temperature Maximum RMS on-state current I T() I T(RMS) conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled 0(3) 55(85) Maximum peak, one cycle non-reptitive surge current Maximum l²t for fusing I TSM 2 I t No voltage % RRM No voltage % RRM Sinusoidal half wave, initial T = T maximum k s Maximum l² t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2 t t = 0.1 to 10 ms, no voltage 1 2 k s T(TO)1 T(TO)2 r t1 r t2 TM l =00,T =T maximum t =10 ms sine pulse pk, p l H l L (16.7% x π x l < I < π x l ),T =T maximum T() T() (I > π x l ),T =T maximum T() (16.7% x π x l < I < π x l ),T =T maximum T() T() (I > π x l ),T =T maximum T() T = 25 C, anode supply 12 resistive load mω m SWITCHING PRMETER SYMBOL TEST CONDITIONS LUES UNIT Maximum non-repetitive rate of rise of turned-on current dl/dt Gate drive, Ω, t 1µs r T =T maximum, anode voltage % DRM 0 /µs Typical delay time Typical turn-off time t d t q Gate current 1, dl /dt =1 /µs g = 0.67, T = 25 C d DRM l TM = 7, T =T maximum, dl/dt = /µs. R =, d/dt = /µs, gate 0 Ω, tp = 0µs µs BLOCKING PRMETER SYMBOL TEST CONDITIONS LUES UNIT Maximum critical rate of rise of off-state voltage d/dt T =T maximum linear to % rated DRM 0 /µs Maximum peak reverse and l RRM, off-state leakage current l T =T maximum, rated DRM/ RRM applied DRM, m Page 2 of 6

3 0PT Series TRIGGERING LUES PRMETER SYMBOL TEST CONDITIONS UNIT TYP. MX. Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage P GM P G() I GM + GM - GM T = T maximum, t 5 ms p T = T maximum, f = Hz, d% = T = T maximum, t 5 ms p T = T maximum, t 5 ms p W T = - C 0 - DC gate current required to trigger DC gate voltage required to trigger I GT GT T = 25 C T = 125 C T = - C T = 25 C Maximum required gate current/voltage are the lowest value which will trigger all units 12 anode to cathode applied m T = 125 C DC gate current not to trigger DC gate voltage not to trigger Maximum gate current/ l GD 10 voltage not to trigger is the T = T maximum maximum value which will not trigger any unit with rated GD 0.25 DRM anode to cathode applied m THERML ND MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS LUES UNIT Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink T T stg R th-hs R thc-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled - to to K/W Mounting force, ±10% pproximate weight Case style 140 (10) 255 TO-0C (B-PUK), Nell s C-type Capsule N (kg) g RthC CONDUCTION CONDUCTION NGEL SINUSOIDL CONDUCTION RECTNGULR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE Note The table above shows the increment of thermal resistance R th-hs when devices operate at different conduction angles than DC TEST CONDUCTIONS T = T maximum UNITS K/W Page 3 of 6

4 0PT Series Fig.1 Current ratings characteristics Fig.2 Current ratings characteristics (Single side cooled) R th-hs(dc) = 0.072K/W Conduction ngle (Single side cooled) R th-hs(dc) = K/W Conduction Period 30 DC verage on-state current () verage on-state current () Fig.3 Current ratings characteristics Fig.4 Current ratings characteristics 1 30 (Double side cooled) R th-hs(dc) = K/W Conduction ngle DC verage on-state current () verage on-state current () 1 30 (Double side cooled) R th-hs(dc) = K/W Conduction Period Fig.5 On-state power loss characteristics Fig.6 On-state power loss characteristics Maximum average on-state power loss(w) RMS Limit Conduction ngle T = 125 C Maximum average on-state power loss(w) DC RMS Limit Conduction Period T = 125 C verage on-state current () verage on-state current () Page 4 of 6

5 T = 125 C 0PT Series Fig.7 Maximum non-repetitive surge current single and double side cooled Fig.8 Maximum non-repetitive surge current single and double side cooled Peak half sine wave on-state current() t ny Rated Load Condition nd With Rated RRM pplied Following Surge initial T = 125 Hz Hz 0.0 s Peak half sine wave on-state current() Maximum Non Repetitive Surge Current ersus Pulse Train Duration. Control Of Conduction May Not Be Maintained Initial T = 125 No oltage Reapplied Rated Reapplied RRM Number of equal amplitude half cycle current pulses (N) Pulse train duration (S) Fig.9 On-state voltage drop characteristcs Fig.10 Thermal lmpedance Zth-hs characteristics Instantaneous on-state current () 00 0 T = 25 C T = 125 C Transient thermal lmpedance Z th-hs (K/W) Steady state value R = 0.072K/W th-hs (Single side cooled) R = 0.036K/W th-hs (Double side cooled) (DC operation) Instantaneous on-state voltage () Square wave pulse duration (s) Fig.11 Gate characteristics Instantaneous gate voltage () 10 1 Rectangular gate pulse a) Recommended load line for rated di/dt :, 10 ohms; tr<=1µs b) Recommended load line for <=30% rated di/dt : 10, 10 ohms tr<=1 µs GD T = 25 C (b) T = - C IGD Frequency Limited by PG() (a) (1) PGM = 10W, tp = 4ms (2) PGM = W, tp = 2ms (3) PGM = W, tp = 1ms (3) PGM = W, tp = 0.66ms (1) (2) (3) (4) Instantaneous gate current () Page 5 of 6

6 0PT Series ORDERING INFORMTION TBLE Device code 0 PT 16 C Maximum average on-state current I T(), 10 for PT = Phase Control Thyristors oltage code, code = RRM/ RRM - C = PUK case TO-0C (B-PUK), Nell s C-type Capsule - Terminal type, 0 for eyelet TO-0C (B-PUK ) ( Nell s C-type Capsule) Creepage distance: 28.88(1.137) minimum Strike distance: 18.0(0.8) minimum 6.2(0.24) Min. Ø58.5(2.30) Max. 4.7 (0.18) ± (1.44) Ø3.5 (0.14) x 2.5 (0.1) deep, both ends 0.7(0.03) MIN. Ø34.0±0.1(1.34±0.004) 2 places 27.6(1.09) MX. Pin receptacle MP (0.03) MIN. Ø53.0(2.09) Max. K G ll dimensions in millimeters (inches) Page 6 of 6