MTC-500, MTK-500, MTA-500 Dual SCR Power Module
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1 KKMTx5, December29 version MTC-5, MTK-5, MTA-5 s are designed for use in power electronic circuits and equipment under normal operating conditions. KEY PARAMETERS U DRM, U RRM I T(AV) I TSM du/dt* di/dt up to 18 V 5 A 17 A 1 V/µs 2 A/µs * maximum (non standard) value APPLICATION High Voltage Power Supplies Motor Control Outline See package details for further information FEATURES electrically isolated base high current capabilities high surge current capabilities high rates voltages low thermal impedance (Aluminium Nitride Insulators) tested according to IEC standards compact size and small weight Designed for use in high power industrial and commercial power electronic circuits and equipment where high currents are encoutered and high reliability is essential. ORDERING INFORMATION When ordering please refer to device code builder presented below. Please use the complete part number when ordering, quote or in any future correspondence relating to your order. du/dt (see table) MT Voltage class (hundred volts) Elements configuration (see drawings) LAMINA Semiconductors International Ltd. Tel.: PL-5-5 Piaseczno 1/1
2 MTC-5, MTK-5, MTA-5 KKMTx5, December29 version ELECTRICAL PARAMETERS Voltage ratings Voltage class U RRM U RSM I RRM V V ma du/dt group codes du/dt Group code V/µs no specified value LAMINA Semiconductors International Ltd. Tel.: PL-5-5 Piaseczno 2/1
3 MTC-5, MTK-5, MTA-5 KKMTx5, December29 version Electrical properties Parameter Unit Test conditions Value Average on-state current I T(AV) A 5 Case temperature T c C 85 RMS on-state current I T(RMS) A 785 Surge current I TSM A T j=125 C, U R=,8U RRM, t p=1ms 17 I 2 t value I 2 t ka 2 s 1445 On-state voltage max. U TM V T j=25 C, I TM=15A 1,31 Treshold voltage U T(T) V,7 Slope resistance r T mω,44 Latching current I l ma T j=25 C, U D=12V 8 Holding current I H ma T j=25 C, U D=12V 2 Circuit commutated turn-off time (typical) t q µs T j=125 C, I TM=25A, di R/dt=25A/µs, du/dt=2v/µs, U D=,67U DRM, U RM=1V Turn-n time (typical) t gt µs I TM=1A, U DM=1V 1 Rate of rise of on-state currentrepetitive Critical rate of raise of off-state voltage di/dt A/µs T j=125 C, I TM=3I T(AV), U D=,67U DRM, f=5hz, I GM=1A, di G/dt=1A/µs du/dt V/µs T j=125 C, U D=,67U DRM, 2-1 Gate current to trigger I GT ma T j=25 C, U D=12V 2 Gate voltage to trigger U GT V T j=25 C, U D=12V 3 RMS isolation voltage U isol V 1s, circut to base, all terminals shorted Termal properties Thermal resistance, junction to case per thyristor/module Thermal resistance, case to heatsink per thyristor/module Parameter Unit Test conditions Value R thjc C/W DC,6/,3 R thch C/W,2/,1 Operating junction temperature T jmin...t jmax C Storage temperature T stg C LAMINA Semiconductors International Ltd. Tel.: PL-5-5 Piaseczno 3/1
4 MTC-5, MTK-5, MTA-5 KKMTx5, December29 version Mechanical properties Parameter Unit Value Mounting torque (M6) M1 Nm 6, ±15% Terminal connection torque (M1) M2 Nm 12, ±1% Weight M g 149 Cofigurations MTC MTK MTA Terminal number: Terminal number: Terminal number: LAMINA Semiconductors International Ltd. Tel.: PL-5-5 Piaseczno 4/1
5 MTC-5, MTK-5, MTA-5 KKMTx5, December29 version Package details For further package information, please contact Sales & Marketing Department. All dimensions in mm, unless stated otherwise. Do not scale. LAMINA Semiconductors International Ltd. Tel.: PL-5-5 Piaseczno 5/1
6 MTC-5, MTK-5, MTA-5 KKMTx5, December29 version CHARACTERISTICS P T(AV), [W] /2 x MTx-5 3 o o 9 6 o o o T C, [ o C] 1/2 x MTx-5 Q o 6 o 9 o 12 o 1 Q 8 18 o I T(AV), [A] Power loss characteristics. Sinus wave form I T(AV), [A] Case temperature ratings. Sinus wave form. P T(AV), [W] T C, [ o C] /2 x MTx-5 o 6 3 o 9 o 12 o 18 o DC /2 x MTx-5 Q Q 8 3 o 6 o 9 o 12 o 18 o DC I T(AV), [A] Power loss characteristics. Square wave form I T(AV), [A] Case temperature ratings. Square wave form. LAMINA Semiconductors International Ltd. Tel.: PL-5-5 Piaseczno 6/1
7 MTC-5, MTK-5, MTA-5 KKMTx5, December29 version T c, o C 12 1 x MTC-5 W1,7,5,4,3,2 12 R thca ,1 92,5 8 8, ,2 15,5 4 4,3, I Power loss characteristic per module RMS, A 2,6,8 1, 1, Power loss per module vs case temperature T a, o C 118,5 T c, o C 24 2 x MTx-5 B2 R L,4,3 24,2 R thca ,5 92, , ,1 15,5 8 8,15, I Power loss characteristics of two modules D, A 4,3,4,6 1, Power loss of two modules vs case temperature T a,o C 118,5 LAMINA Semiconductors International Ltd. Tel.: PL-5-5 Piaseczno 7/1
8 MTC-5, MTK-5, MTA-5 KKMTx5, December29 version x MTx-5 W3 B6 4 35,2 R thca T c, o C ,3 9, , , ,7 17, Power loss characteristics of three modules I RMS,I D, A 1 5,1,15,2,3,4, Power loss of three modules vs case temperature T a,o C 113,5 119 U TM, V I TSM, [ka] 6 5 1/2 x MTx-5 MTT-3 T j =T jmax /2 x MTx-5 T j =T jmax U R =,8U RRM I TM, A On-state characteristic Non-repetitive surge current rating n LAMINA Semiconductors International Ltd. Tel.: PL-5-5 Piaseczno 8/1
9 MTC-5, MTK-5, MTA-5 KKMTx5, December29 version Z th(t), o C/W,1 1/2 x MTx-5 MDD-17,1,1,1,1, Transient thermal impedance t, s GATE CHARACTERISTICS 6 i G, ma 5 4 T j = -4 o C 3 2 T j = +125 o C T j = +25 o C 1 u G, V U GD =,25V Gate characteristic. Possible trigger area i G, A B U FGM = 2V I FGM = 4A P GM = 16W 1 R A u G, V Gate characteristic. A - possible trigger area B - permitted gate pulse forcing area R - recommended gate drive load line LAMINA Semiconductors International Ltd. Tel.: PL-5-5 Piaseczno 9/1
10 MTC-5, MTK-5, MTA-5 KKMTx5, December29 version HEATSINKS LAMINA S.I. has its own proprietary range of extruded aluminium heatsinks designed to optimise the performance of our semiconductors with natural and forced air flow. POWER ASSEMBLY CAPABILITY LAMINA S.I. provides a support for those customers requiring more than a basic semiconductor and offers precisely assembled Power Blocks according to factory or customer standards. LAMINA Semiconductors International Ltd. Tel.: PL-5-5 Piaseczno 1/1
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