Thyristor Modules Thyristor/Diode Modules
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- Adelia Patrick
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1 MCC MCD Thyristor Modules Thyristor/Diode Modules I TRMS = x 5 I TM = x RRM = -8 RSM RRM Type DSM DRM MCC -io MCD -io 5 4 MCC -4io MCD -4io 7 6 MCC -6io MCD -6io 9 8 MCC -8io MCD -8io E787 Symbol Conditions Maximum Ratings I TRMS, I FRMS I TM, I FM = M T C = 85; 8 sine 5 I TSM, I FSM = 45; t = ms (5 Hz) R = t = 8. ms (6 Hz) = M ; t = ms (5 Hz) R = t = 8. ms (6 Hz) I t = 45; t = ms (5 Hz) R = t = 8. ms (6 Hz) = M ; t = ms (5 Hz) R = t = 8. ms (6 Hz) (di/dt) cr = M ; f = 5 Hz; t p = µs; D = / DRM ; I G = ; di G /dt = /µs (dv/dt) cr = M ; D = / DRM ; R GK = ; method (linear voltage rise) P GM = M ; t p = µs I T = I T()M ; t p = 5 µs P G s s s s repetitive, I T = 96 /µs non repetitive, I T = I TM 5 /µs /µs 6 RGM M T stg ISOL 5/6 Hz, RMS t = min I ISOL < m t = s M d Mounting torque (M6) Terminal connection torque (M8) ~ ~ Nm Nm eight Typical including screws 75 g Data according to IEC 6747 and refer to a single diode unless otherwise stated. MCC MCD Features International standard package Direct Copper Bonded l O -ceramic with copper base plate Planar passivated chips Isolation voltage 6 ~ UL registered, E 787 Keyed gate/cathode twin pins pplications Motor control, softstarter Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Solid state switches dvantages Simple mounting Improved temperature and power cycling Reduced protection circuits 8c IXYS ll rights reserved - 5
2 MCC MCD Symbol Conditions Characteristic alues typ. max. I RRM, I DRM R / D = RRM / DRM = M 4 m T, F I T ; I F = 6 = 5. T For power-loss calculations only.8 r t = M.68 m GT I GT D = 6 = 5 = -4 D = 6 = 5 = -4 5 GD I GD D = / DRM ; = M.5 I L t p = µs; D = 6 = 5 I G =.45 ; di G /dt =.45 /µs m m m m I H D = 6 ; R GK = ; = 5 5 m t gd D = ½ DRM = 5 µs I G = ; di G /dt = /µs t q D = / DRM = M µs dv/dt = 5 /µs; -di/dt = /µs I T = ; R = ; t p = µs Q S I T = ; -di/dt = 5 /µs = M 76 I RM 75 R thjc R thjk d S d a per thyristor; current per module per thyristor; current per module Creeping distance on surface Creepage distance in air Maximum allowable acceleration µc mm mm m/s G [] typ. limit I G [] Fig. Surge overload current I TSM/FSM : Crest value, t: duration t gd [μs] : I GT, = : I GT, = 5 : I GT, = -4 I GD, = 4: P GM = 5: P GM = 6 6: P GM =.. I G [] = 5 Fig. Gate trigger delay time 8c IXYS ll rights reserved - 5
3 MCC MCD Dimensions in mm ( mm =.94 ) M8 x S.8 x , , Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 5 mm, gate = white, cathode = red Type ZY 8L (L = Left for pin pair 4/5) UL 758, style 75 Type ZY 8R (R = Right for pin pair 6/7) 8c IXYS ll rights reserved - 5
4 MCC MCD 8 I T(F)SM 6 [] 4 5 Hz 8 % RRM = 45 = 4 6 I dt 5 [ s] R = = 45 = I F(T)M [] 8 sin 6... Fig. Surge overload current I T(F)SM :Crest value, t: duration 4 t [ms] Fig. 4 I dt versus time T C Fig. 4a Max. forward current at case temperature sin 6 R thk I FM/TM [] T Fig. 5 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Circuit B6 xmcc or xmcd R thk I DM [] T Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 8c IXYS ll rights reserved 4-5
5 MCC MCD Circuit xmcc or xmcd R thk I RMS [] T Fig. 7 Three phase C-controller: Power dissipation versus R MS output current and ambient temperature Z thjc [] Fig. 8 Transient thermal impedance junction to case (per thyristor/diode) R thjc for various conduct. angles d: d R thjc () Constants for Z thjc calculation: i R thi () t i (s) Z thjk [] Fig. 9 Transient thermal impedance junction to heatsink (per thyristor/diode) 8c IXYS ll rights reserved R thjk for various conduct. angles d: d R thjk () Constants for Z thjk calculation: i R thi () t i (s)
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