Standard Rectifier Module

Transcription

1 Standard ectifier Module = 16 M I = 56 A FA F =.98 Single Diode Part number MDO5-16N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 Planar passivated chips ery low leakage current ery low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Supplies for power equipment Input rectifiers for PWM inverter Battery power supplies Field supply for motors Isolation oltage: 36 ~ Industry standard outline ohs compliant Base plate: Copper internally B isolated Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Data according to IEC 6747and per semiconductor unless otherwise specified b

2 ectifier Symbol SM M I I Definition = 16 = 16 J T = 14 C atings typ. max. 17 F forward voltage drop I = 5 A 1.9 I F T C= 85 C thermal resistance junction to case.72 K/W FA F(MS) max. non-repetitive reverse blocking voltage reverse current I = F Conditions 5 A J F threshold voltage T J = 14 C.8 for power loss calculation only r F slope resistance.38 mω thjc thch max. repetitive reverse blocking voltage J average forward current MS forward current thermal resistance case to heatsink I F = 1 A I F = 1 A 18 sine d =.5 P tot total power dissipation 16 W J J T = 125 C I FSM max. forward surge current t = 1 ms; (5 Hz), sine T J = 45 C t = 8,3 ms; (6 Hz), sine = t = 1 ms; (5 Hz), sine t = 8,3 ms; (6 Hz), sine J C T J = 14 C I²t value for fusing t = 1 ms; (5 Hz), sine T = 45 C t = 8,3 ms; (6 Hz), sine t = 1 ms; (5 Hz), sine t = 8,3 ms; (6 Hz), sine T J = 14 C T = 14 C min..24 C J junction capacitance = 4 ; f = 1 MHz 762 J J = = = Unit ma ma A A K/W MA²s MA²s ²s ²s J pf Data according to IEC 6747and per semiconductor unless otherwise specified b

3 Package atings Symbol Definition Conditions min. typ. max. Unit I MS MS current per terminal 6 A T J virtual junction temperature C T op operation temperature C Weight M D M T dspp/app dspb/apb Y1 T stg storage temperature C ISOL mounting torque 4.5 terminal torque 11 creepage distance on surface striking distance through air isolation voltage t = 1 second t = 1 minute terminal to terminal terminal to backside 5/6 Hz, MS; I ISOL 1 ma g Nm Nm mm mm Production Index (PI) Date Code () yywwaa Part Number Lot.No: xxxxxx Circuit Data Matrix: part no. (1-19), + PI (2-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. MDO5-16N1 MDO5-16N1 Box Similar Part Package oltage class MDO5-12N1 Y1-2-CU 12 MDO5-14N1 Y1-2-CU 14 MDO5-18N1 MDO5-2N1 Y1-2-CU Y1-2-CU 18 2 MDO5-22N1 Y1-2-CU 22 Equivalent Circuits for Simulation * on die level T = 14 C I ectifier J max threshold voltage.8 max slope resistance *.19 mω Data according to IEC 6747and per semiconductor unless otherwise specified b

4 Outlines Y1 2x M , ± Data according to IEC 6747and per semiconductor unless otherwise specified b

5 ectifier I TSM Hz 8 % M T J = 45 C T J = 14 C 1 7 I 2 t 1 6 A 2 s = T J = 45 C 1 8 I FAM sin t [s] Fig. 1 Surge overload current I FSM : Crest value, t: duration t [ms] T J = 14 C 1 Fig. 2 I 2 t versus time (1-1 ms) T C Fig. 3 Maximum forward current at case temperature P tot 6 [W] sin thka K/W I F T J = 125 C T J = 25 C I FAM T A F [] Fig. 4 Power dissipation vs. forward current and ambient temperature Fig. 5 Forward current I F versus F P tot 16 [W] Circuit B2 4xMDO5 L thka K/W I dam T A Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature. = resistive load, L = inductive load Data according to IEC 6747and per semiconductor unless otherwise specified b

6 ectifier P tot [W] thka K/W Circuit B6 6xMDO I dam T A Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Z thjc [K/W] t [s] Fig. 7 Transient thermal impedance junction to case thjc for various conduction angles d: d thjc (K/W) Constants for Z thjc calculation: i thi (K/W) t i (s) Z thjk [K/W] t [s] Fig. 8 Transient thermal impedance junction to heatsink thjk for various conduction angles d: d thjk (K/W) Constants for Z thjk calculation: i thi (K/W) t i (s) Data according to IEC 6747and per semiconductor unless otherwise specified b