2/4. Features / Advantages: Applications: Package: TO-263 (D2Pak) Diode for main rectification For single and three phase bridge configurations

Transcription

1 DSI3-6S Standard ectifier = 6 M I = 3 F F =.25 Single Diode Part number DSI3-6S Backside: cathode 3 2/4 Features / dvantages: pplications: Package: TO-263 (D2Pak) Planar passivated chips ery low leakage current ery low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Industry standard outline ohs compliant Epoxy meets UL 94- Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. 23 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 237a

2 DSI3-6S ectifier Symbol SM M I I Definition = 6 = 6 T = 5 C atings max. 7 F forward voltage drop I = 3.29 F T C= 3 C thermal resistance junction to case.9 K/W F max. non-repetitive reverse blocking voltage reverse current I = F Conditions 3 F threshold voltage T = 75 C.82 for power loss calculation only r F slope resistance 4. mω thjc thch max. repetitive reverse blocking voltage average forward current thermal resistance case to heatsink I F = 6 I F = 6 rectangular d =.5 P tot total power dissipation 6 W T = 5 C I FSM max. forward surge current t = ms; (5 Hz), sine T = 45 C t = 8,3 ms; (6 Hz), sine = t = ms; (5 Hz), sine t = 8,3 ms; (6 Hz), sine C J junction capacitance = 4 ; f = MHz C T = 5 C I²t value for fusing t = ms; (5 Hz), sine T = 45 C t = 8,3 ms; (6 Hz), sine t = ms; (5 Hz), sine t = 8,3 ms; (6 Hz), sine T = 75 C T = 5 C = = = min Unit µ m K/W pf ²s ²s ²s ²s 23 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 237a

3 DSI3-6S Package ) IMS is typically limited by the pin-to-chip resistance (); or by the current capability of the chip (2). In case of () and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. atings Symbol Definition Conditions min. max. Unit I MS MS current ) per terminal 35 T virtual junction temperature C T op operation temperature -4 5 C Weight F C TO-263 (D2Pak) T stg storage temperature -4 5 C mounting force with clip g N Product Marking Part No. Logo ssembly Line Date Code ssembly Code XXXXXXXXX IXYS Zyyww Ordering Standard lternative Ordering Number Marking on Product Delivery Mode Quantity Code No. DSI3-6S DSI3-6S Tape & eel DSI3-6S-TUB DSI3-6S Tube 5 47 Similar Part Package oltage class DSI3-6 TO-22C (2) 6 DSI3-2S TO-263B (D2Pak) (2) 2 DSI3-2 DSI3-2C DSI3-8S DSI3-8 DSI3-8C TO-22C (2) ISOPLUS22C (2) TO-263B (D2Pak) (2) TO-22C (2) ISOPLUS22C (2) Equivalent Circuits for Simulation * on die level T = 75 C I ectifier max threshold voltage.82 max slope resistance * mω 23 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 237a

4 DSI3-6S Outlines TO-263 (D2Pak) E 2 3 2x e L W D c2 L.92 (.43) c mm (Inches) 9.2 (.355) H 3x b2 4 E Supplier Option 3.8 (.5).78 (.7) 3.5 (.2) D L2 2x b Millimeter Inches Dim. min max min max b b c c D D D E E e e 2,54 BSC 4.28, BSC.69 H L L W ll dimensions conform with and/or within JEDEC standard (.) ecommended min. foot print 3 2/4 23 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 237a

5 DSI3-6S ectifier Hz, 8% M 5 = I F 3 [] 2 T = 25 C 5 C 2 I FSM [] 5 T = 5 C T = 45 C 3 I 2 t 2 [ 2 s] T = 45 C T = 5 C T = 25 C F [] t [s] t [ms] Fig. Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I 2 t versus time per diode 5 4 P 3 tot [W] 2 DC = thh :.6 K/W.8 K/W K/W 2 K/W 4 K/W 8 K/W 4 3 I F()M 2 [] DC = I F()M [] T amb [ C] T C [ C] Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs. case temperature..8.6 Z thjc.4 [K/W].2. Constants for Z thjc calculation: i thi (K/W) t i (s) t [ms] Fig. 6 Transient thermal impedance junction to case 23 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 237a