Maximum Ratings Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit
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1 Fast Switching EmCon Diode Feature 6 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 6 V I F 9 V F 1.5 V T jmax 175 C Type Package Ordering Code PG-TO Marking D9E6 Pin 1 PIN 2 PIN 3 NC C Maximum Ratings Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Parameter Symbol Value Unit Repetitive peak reverse voltage V R R M 6 V Repetitive peak reverse voltage V RRM 6 V Continuous forward current TContinous forward current I F C = 25 C 19.3 I F T C = =25 C 9 C T C =9 C 13 Surge non non repetitive repetitive forward forward current current T T C = 25 C, t C =25 C, t p = ms, sine halfwave p = ms, sine halfwave Maximum repetitive forward current Maximum repetitive forward current T C = 25 C, t p limited by t j,max, D =.5 T C =25 C, t p limited by T jmax, D=.5 Power dissipation TPower C = 25 C dissipation T C = =25 C 9 C I FSM I 4 F S M 4 I FRM I F R M 29.5 P tot P t o t Operating T C =9 C junction temperature T j Storage Operating temperature and storage temperature T j, T stgs t g C C Soldering temperature T S 26 C T 1.6mm reflow soldering, (.63 in.) MSL1 from case for s S 26 W
2 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R thjc K/W Thermal resistance, junction - ambient, leaded R thj SMD version, device on min. footprint R thj cm 2 cooling area 1) Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current I R µ V R =6V, T j =25 C V R =6V, T j =15 C Forward voltage drop I F =9, T j =25 C I F =9, T j =15 C V F V Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.4 Page 2
3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time t rr ns V R =4V, I F =9, di F /dt=8/µs, T j =25 C V R =4V, I F =9, di F /dt=8/µs, T j =125 C V R =4V, I F =9, di F /dt=8/µs, T j =15 C Peak reverse current V R =4V, I F = 9, di F /dt=8/µs, T j =25 C V R =4V, I F =9, di F /dt=8/µs, T j =125 C V R =4V, I F =9, di F /dt=8/µs, T j =15 C Reverse recovery charge V R =4V, I F =9, di F /dt=8/µs, T j =25 C V R =4V, I F =9, di F /dt=8/µs, T j =125 C V R =4V, I F =9, di F /dt=8/µs, T j =15 C Reverse recovery softness factor V R =4V, I F =9, di F /dt=8/µs, T j =25 C V R =4V, I F =9, di F /dt=8/µs, T j =125 C V R =4V, I F =9, di F /dt=8/µs, T j =15 C nc S Rev.2.4 Page 3
4 1 Power dissipation P tot = f (T C ) parameter: T j 175 C 6 W 2 Diode forward current I F = f(t C ) parameter: T j 175 C 2 Ptot IF C C 175 T C T C 3 Typ. diode forward current I F = f (V F ) 4 Typ. diode forward voltage V F = f (T j ) C 25 C C 15 C V 18 IF VF , V 2.5 V F Rev.2.4 Page C 16 T j
5 5 Typ. reverse recovery time t rr = f (di F /dt) parameter: V R = 4V, T j = 125 C 6 Typ. reverse recovery charge Q rr =f(di F /dt) parameter: V R = 4V, T j = 125 C 35 8 nc ns 18 7 trr Qrr /µs di F /dt 7 Typ. reverse recovery current I rr = f (di F /dt) parameter: V R = 4V, T j = 125 C /µs di F /dt 8 Typ. reverse recovery softness factor S = f(di F /dt) parameter: V R = 4V, T j = 125 C Irr S /µs di F /dt /µs di F /dt Rev.2.4 Page 5
6 9 Max. transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T K/W 1 IDP9E6 ZthJC -1-2 D = single pulse s t p Rev.2.4 Page 6
7 Rev.2.4 Page 7
8 Published by Infineon Technologies G, München 29 Infineon Technologies G ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.4 Page 8
9 Mouser Electronics uthorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon:
IDB30E120. Fast Switching Emitter Controlled Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Emitter Controlled Diode Feature 1200 V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM
IDB30E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 30 A V F 1.5 V T jmax 175 C
Fast Switching EmCon Diode Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM
IDD06E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 6 A V F 1.5 V T jmax 175 C
Fast Switching EmCon Diode Feature 6 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 6
Surge non repetitive forward current I FSM 78 I FRM 47. P tot Operating and storage temperature T j, T stg
Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 18 A V F 1.65 V
IDP45E60. Fast Switching Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C. Features 600V Emitter Controlled technology
Fast Switching Diode Features 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Pb-free lead plating; RoHS compliant Halogen-free
Product Summary V RRM 600 V I F 23 A V F 1.5 V T jmax 175 C 600V diode technology
Fast Switching Diode Features Product Summary V RRM 600 V I F 23 V F 1.5 V T jmax 175 C 600V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling
IDP30E120. Fast Switching Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Diode Features 1200 V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Product Summary V RRM 1200 V I F 30 V F 1.65 V T jmax 150 C PGTO2202 Easy
SPN01N60C3. Cool MOS Power Transistor V T jmax 650 V
SPNN6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances Improved transconductance
thinq! SiC Schottky Diode
SDT12S6 Silicon Carbide Schottky Diode Worlds first 6V Schottky diode Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the
Cool MOS Power Transistor
Cool MOS Power Transistor New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Optimized capacitances Improved noise immunity Final data P-TO5 SPUNS5
OptiMOS =Power-Transistor
SPB8N6SL-7 OptiMOS =Power-Transistor Features N-Channel Enhancement mode valanche rated Logic Level dv/dt rated =175 C operating temperature Product Summary Drain source voltage V DS 55 V Drain-source
Cool MOS Power Transistor
Cool MOS Power Transistor New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Optimized capacitances Improved noise immunity Final data SPI7N6S5
Preliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls 5.
Cool MOS =Power Transistor =New revolutionary high voltage technology Ultra low gate charge =Periodic avalanche rated Extreme dv/dt rated =Optimized capacitances =Improved noise immunity =Former development
BSO604NS2 OptiMOS Power-Transistor
BSO6NS OptiMOS Power-Transistor Feature Dual N-Channel Enhancement mode Logic Level 5 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 35 mω I D 5 P-DSO-8-7 Type Package
Preliminary data. Type Package Ordering Code Tape and Reel Information BSP 317 P SOT-223 Q67042-S4167 -
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Gate pin Product Summary V DS -5 V R DS(on) 4 Ω I D -.43 Drain pin /4 Source pin 3 SOT-3 4 3 VPS563 Type Package
2 nd Generation thinq! TM SiC Schottky Diode
IDB1S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
Preliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (. V rated) C operating temperature valanche rated dv/dt rated Product Summary V DS - V R DS(on) 7 mω I D -. SOT-
Preliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -2.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS - V R DS(on) 55 mω I D -.58
SPB03N60S5. Cool MOS Power Transistor V DS 600 V
SPB3N6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved
2 nd Generation thinq! TM SiC Schottky Diode
IDD4S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery No temperature
Maximum Ratings, at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current E AS. P tot 0.36 W
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level valanche rated dv/dt rated Product Summary V DS -6 V R DS(on) 8 W I D -.17 PG-SOT-3 3 Type Package Tape and Reel Marking 1
SPD50N03S2-07 OptiMOS Power-Transistor
OptiMOS PowerTransistor Feature NChannel Enhancement mode Excellent Gate Charge x R DS(on) product (FOM) Superior thermal resistance 175 C operating temperature valanche rated dv/dt rated Product Summary
SPD30N08S2-22 OptiMOS Power-Transistor
SPD3N8S222 OptiMOS PowerTransistor Feature NChannel Enhancement mode 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 75 V R DS(on) 21.5 mω 3 P TO252 311 Type Package Ordering
SPB07N60C3. Cool MOS Power Transistor V T jmax 650 V. Operating and storage temperature T j, T stg C 6) Feature
SPB7N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current
SPD30N06S2L-13 OptiMOS Power-Transistor
SPD3N6S2L13 OptiMOS PowerTransistor Feature NChannel Enhancement mode Logic Level 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 13 mω 3 P TO252 311 Type Package
3 rd Generation thinq! TM SiC Schottky Diode
IDD4SG6C 3 rd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery / No forward recovery Temperature
Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls E AS. P tot 0.
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 2 W Continuous
Preliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
SPB8P6P SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on).23
BSS670S2L. OptiMOS Buck converter series. Product Summary. Feature V DS 55 V. R DS(on) 650 mω. Enhancement mode I D 0.54 A. Logic Level.
BSS67S2L OptiMOS Buck converter series Feature NChannel Enhancement mode Logic Level Product Summary V DS 55 V R DS(on) 65 mω I D.54 PGSOT 23 Type Package Ordering Code BSS67S2L PGSOT 23 Q6742S452 Marking
Preliminary data. Maximum Ratings,at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -0.
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V DrainSource onstate resistance R DS(on) 8 Ω Continuous
SPP80N06S2L-07 SPB80N06S2L-07 OptiMOS Power-Transistor
SPP8N6S2L7 SPB8N6S2L7 OptiMOS PowerTransistor Feature NChannel Enhancement mode Logic Level 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 7 mω 8 P TO263 32 P
Product Summary Drain source voltage V DS -60 V Drain-source on-state resistance R DS(on) 8 W Continuous drain current I D A
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 8 W Continuous
Rev 1.2. Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode dv/dt rated Pb-free lead plating; RoHS compliant Product Summary V DS 6 V R DS(on).3 W I D.8 PG-SOT-223 4 2 3 VPS563 Type Package Tape
OptiMOS =Power-Transistor
SPI8N8S7 SPP8N8S7,SPB8N8S7 OptiMOS =PowerTransistor Feature NChannel Enhancement mode 75 C operating temperature valanche rated Product Summary V DS 75 V R DS(on) max. SMD version 7. m I D 8 P TO6 3 P
Rev Type Package RoHS compliant Tape and Reel Information BSP125 P-SOT-223 No
SIPMOS PowerTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant available Product Summary V DS 6 V R DS(on) 45 Ω.12 PGSOT223 Type Package RoHS compliant
Final data P-TO Maximum Ratings Parameter Symbol Value Unit I D
SPP7N8C3, SPB7N8C3 SP7N8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).9 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO I D 7 Ultra low gate charge Periodic avalanche
Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current 1) I D. I D puls 320.
SPP8N6S5 SPB8N6S5 OptiMOS PowerTransistor Feature NChannel Enhancement mode 75 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) max. SMD version.8 m I D 8 P TO63 3
CoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 W Q g,typ 1 nc Qualified
Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. I D puls E AS. dv/dt 6 kv/µs.
IPD6N3LZ OptiMOS PowerTransistor Feature Ideal for highfrequency dc/dc converters nchannel Logic Level Excellent Gate Charge x R DS(on) product (FOM) Low OnResistance R DS(on) Superior thermal resistance
Preliminary data. Type Package Ordering Code Tape and Reel Information BSS 192 P SOT89 Q67042-S4168 -
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Gate pin Product Summary V DS -25 V R DS(on) 2 Ω I D -.9 Drain pin 2 Source pin 3 3 SOT89 2 2 VPS562 Type Package
Final data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Product Summary V DS 8 V R DS(on).5 Ω I D P-TO7 Type Package
Final data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO5 and TO5 I D 7.3 Ultra low gate charge Periodic avalanche rated
SPN03N60C3. Cool MOS Power Transistor V T jmax 650 V
SPNN6C Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances R DS(on). Ω I D.7 A SOT-
Rev Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D
SIPMOS PowerTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant Product Summary V DS 4 V R DS(on) 25 Ω I D.17 SOT223 Type Package Tape and Reel Information
Maximum Ratings Parameter Symbol Value Unit SPP Continuous drain current
SPPN8C SPN8C Cool MOS Power Transistor V DS 8 V Feature R DS(on). Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme dv/dt rated Ultra low effective
SPB16N50C3. Cool MOS Power Transistor V T jmax 560 V. Operating and storage temperature T j, T stg C
SPB6N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature R DS(on).8 Ω New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective
OptiMOS -P2 Power-Transistor Product Summary
OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on) 4.5 mω Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 26 C peak reflow I D -9 A PG-TO252-3-11 175 C operating
Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls 0.68.
SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Gate pin1 Product Summary V DS 1 V R DS(on) 6 Ω I D.17 Drain pin 3 Source pin 2 PG-SOT23 3 1 2 VPS5161 Type Package
Preliminary data. Continuous drain current I D 3-2 A
reliminary data SIMOS SmallSignalTransistor Features Dual and Channel Enhancement mode valanche rated dv/dt rated roduct Summary Drain source voltage DS 6 6 DrainSource onstate R DS(on).. Ω resistance
Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C I D 20.7
Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).22 Ω New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability
SPP11N60C2, SPB11N60C2 SPA11N60C2. Cool MOS Power Transistor. Operating and storage temperature T j, T stg C.
SPPN6C, SPBN6C SPN6C Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances PTO33
Product Summary Drain source voltage. Lead free Yes I D. I D puls -320 E AS. P tot 340 W
SPB8P6P G SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Pbfree lead plating: RoHS compliant Halogenfree according to IEC61249221 Qualified
Final data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
Cool MOS Power Transistor Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 47 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances
Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPW5N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 47 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated
Final data. Marking 11N60C3 11N60C3 11N60C3 11N60C3 Maximum Ratings Parameter Symbol Value Unit SPP_B_I. SPA Continuous drain current I D
SPPN6C3, SPBN6C3 SPIN6C3, SPN6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).38 Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme
CoolMOS Power Transistor
CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for industrial applications Pb-free lead plating; RoHS
CoolMOS Power Transistor
CoolMOS Power Transistor Features new revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
SIPMOS Power-Transistor
SPP18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175 C operating temperature Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A PG-TO22-3 Type Package
OptiMOS -P Small-Signal-Transistor
SPD5P3L OptiMOS -P Small-Signal-Transistor Features P-Channel Enhancement mode Logic level Product Summary V DS -3 V R DS(on),max 7 mω I D -5 A 175 C operating temperature Avalanche rated dv /dt rated
Final data P-TO Maximum Ratings Parameter Symbol Value Unit I D
SPP8N8C3, SPI8N8C3 SP8N8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).65 Ω New revolutionary high voltage technology Ultra low gate charge I D 8 Periodic avalanche rated Extreme dv/dt rated Ultra
I D-ISO W Power dissipation P tot
Features N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 2 3 G D S Type V DS I D R DS(on) Package Ordering
Preliminary data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
Cool MOS =Power Transistor Feature =New revolutionary high voltage technology Ultra low gate charge =Periodic avalanche rated Extreme dv/dt rated =Ultra low effective capacitances SPW47N6C3 Product Summary
Final data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPW47N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).7 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO 47 I D 47 Ultra low gate charge Periodic avalanche rated
Silicon Carbide Schottky Diode IDM05G120C5. 5 th Generation thinq! 1200 V SiC Schottky Diode. Rev
Diode Silicon Carbide Schottky Diode IDM05G120C5 Final Datasheet Rev. 2.0 20150828 Industrial Power Control SiC Schottky Diode Features: Revolutionary semiconductor material Silicon Carbide No reverse
SPP04N60C3, SPB04N60C3 SPA04N60C3. Cool MOS Power Transistor V T jmax 650 V. Final data
SPPN6C3, SPBN6C3 SPN6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).95 Ω New revolutionary high voltage technology Ultra low gate charge I D.5 Periodic avalanche rated Extreme dv/dt rated
SPP08P06P H. SIPMOS Power-Transistor V DS -60 V I D T C = 25 C T C = 100 C. I D puls E AS I D = -8.8 A, V DD = -25 V, R GS = 25 W
H SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on).3
OptiMOS Power-Transistor
OptiMOS Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q11 qualified MSL1 up to 26 C peak reflow 175 C operating temperature Green package (lead free) Product Summary V DS 75 V R
SKP10N60 SKB10N60, SKW10N60
Fast SIGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed
OptiMOS -P2 Power-Transistor
Type IPD5P4P4-13 OptiMOS -P2 Power-Transistor Package Marking Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 26 C peak reflow Product Summary V DS -4 V R DS(on) 12.6 mw I
OptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 1 V R DS(on),max 6.7 mw Features N-channel - Normal Level - Enhancement mode AEC qualified I D 9 A PG-TO252-3-313 TAB MSL1 up to 26 C peak reflow 175
2 nd Generation thinq! TM SiC Schottky Diode
IDH12S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
2 nd Generation thinq! TM SiC Schottky Diode
IDH8S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
OptiMOS -T2 Power-Transistor
IPB2N8S4-3 OptiMOS -T2 Power-Transistor Product Summary V DS 8 V R DS(on),max (SMD version) 2.5 mw Features N-channel - Enhancement mode AEC Q qualified I D 2 A PG-TO263-3-2 PG-TO262-3- PG-TO22-3- MSL
SIPMOS Power-Transistor
SPB18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A dv /dt rated 175 C operating temperature PG-TO63-3 Halogen-free
I C P tot 138 W
High Speed IGBT in NPT-technology 30% lower E off compared to previous generation C Short circuit withstand time 10 µs Designed for operation above 30 khz G E NPT-Technology for 600V applications offers:
OptiMOS -P2 Power-Transistor Product Summary
OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on),max 1.5 mω I D -5 A Features P-channel - Logic Level - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 26 C peak reflow 175 C operating
OptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 4.1 mω Features N-channel - Enhancement mode AEC qualified I D 9 A PG-TO252-3-313 MSL1 up to 26 C peak reflow 175 C operating temperature
OptiMOS -P2 Power-Transistor
OptiMOS -P2 Power-Transistor Product Summary V DS -4 V R DS(on) (SMD Version) 3.1 mw Features P-channel - Logic Level - Enhancement mode I D -12 A AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO22-3-1 MSL1
BSS84P. SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated. Class 0
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level valanche rated dv/dt rated Product Summary V DS -6 V R DS(on) 8 W I D -.17 PG-SOT-3 3 Qualified according to EC Q11 Halogen-free
Preliminary data P-TO Marking 11N60C3 11N60C3 11N60C3 11N60C3 Maximum Ratings Parameter Symbol Value Unit
SPPN6C3, SPBN6C3 SPIN6C3, SPAN6C3 Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability
OptiMOS -T Power-Transistor
IPB35N2S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 2 V R DS(on),max 26.3 mw Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode I D 35 A PG-TO263-3-2 Tab
Soft Switching Series I C I F I FSM
Reverse Conducting IGBT with monolithic body diode Features: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200
OptiMOS -T Power-Transistor Product Summary
OptiMOS -T Power-Transistor Product Summary V DS 1 V R DS(on),max 26 mw Features N-channel - Enhancement mode Automotive AEC Q11 qualified I D 35 A PG-TO252-3-11 MSL1 up to 26 C peak reflow 175 C operating
OptiMOS -P2 Power-Transistor
OptiMOS -P2 Power-Transistor Product Summary V DS - V R DS(on),max.6 mw I D -5 A Features P-channel - Logic Level - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 26 C peak reflow 175 C operating
SPP20N60C3, SPB20N60C3 SPA20N60C3. Cool MOS Power Transistor. Preliminary data
SPP2N6C3, SPB2N6C3 SPA2N6C3 Cool MOS Power Transistor Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 22 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated
OptiMOS -P2 Power-Transistor Product Summary
IPB8P3P4L-4 OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on) (SMD Version) 4.1 mω Features P-channel - Logic Level - Enhancement mode I D -8 A AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO22-3-1
OptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 7.3 mω Features N-channel - Enhancement mode AEC qualified I D 5 A PG-TO252-3-33 MSL up to 26 C peak reflow 75 C operating temperature
SiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDL04G65C5. Rev. 2.0,
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Data Sheet Rev. 2., 213-12-5 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description ThinQ!
I C. A Pulsed collector current, t p limited by T jmax I Cpuls 40 Turn off safe operating area V CE 600V, T j 150 C - 40.
Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter G C E NPT-Technology
Product Summary Drain source voltage. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 2 W Continuous
OptiMOS -5 Power-Transistor
IPCN4S5L-R9 OptiMOS -5 Power-Transistor Product Summary V DS 4 V R DS(on),max.9 mw Features OptiMOS - power MOSFET for automotive applications I D A PG-TDSON-8-34 N-channel - Enhancement mode - Logic Level
OptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max (SMD version).8 mω Features N-channel - Enhancement mode I D 2 A PG-TO263-3-2 PG-TO262-3- PG-TO22-3- AEC qualified MSL up to 26 C peak
Product Summary Drain source voltage V DS -60 V Drain-source on-state resistance R DS(on) 8 W Continuous drain current I D A
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 8 W Continuous
I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62.
Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter NPT-Technology
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed
SPP20N60S5. Cool MOS Power Transistor V DS 600 V
SPPN6S Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective
SPP03N60S5 SPB03N60S5
Cool MOS Power Transistor New revolutionary high voltage technology Ultra low gate charge Periodic avalanche proved Extreme dv/dt rated Optimized capacitances Improved noise immunity Former development
BSL211SP. Rev 2.0. Product Summary V DS -20 V R DS(on) 67 mω I D -4.7 A. Type Package Tape and reel BSL211SP P-TSOP6-6 H6327: 3000pcs/r.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Pb-free lead plating; RoHS compliant Qualified
OptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 6 V R DS(on),max.7 mω Features N-channel - Enhancement mode I D 8 A PG-TO263-7-3 AEC Q qualified MSL up to 26 C peak reflow 75 C operating temperature
I C. A Pulsed collector current, t p limited by T jmax I Cpuls 3.5 Turn off safe operating area V CE 1200V, T j 150 C - 3.
HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant