Rev 1.2. Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.

Transcription

1 SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode dv/dt rated Pb-free lead plating; RoHS compliant Product Summary V DS 6 V R DS(on).3 W I D.8 PG-SOT VPS563 Type Package Tape and Reel Information P-SOT-223 E6327 PG-SOT-223 L6327 Marking Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T =25 C T =7 C Pulsed drain current I D puls 7.2 T =25 C I D.8.44 Reverse diode dv/dt dv/dt 6 kv/µs I S =.8, VDS=4V, di/dt=2/µs, Tjmax=5 C Gate source voltage V GS ±2 V ESD Sensitivity (HBM) as per MIL-STD 883 Class Power dissipation P tot.8 W T =25 C Operating and storage temperature T j, T stg C IEC climatic category; DIN IEC 68-55/5/56 Page

2 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point R thjs K/W SMD version, device on min. 6 cm 2 cooling area ) R thj Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V (BR)DSS V V GS =, I D =25µ Gate threshold voltage, V GS = V DS V GS(th).8..8 I D =4µ Zero gate voltage drain current V DS =6V, V GS =, T j =25 C V DS =6V, V GS =, T j =5 C I DSS µ Gate-source leakage current I GSS - n V GS =2V, V DS = Drain-source on-state resistance V GS =V, I D =.8 V GS =4.5V, I D =.8 R DS(on) W Device on 4mm*4mm*.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Page

3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS ³2*I D *R DS(on)max, S I D =.44 Input capacitance C iss V GS =, V DS =25V, pf Output capacitance C oss f=mhz Reverse transfer capacitance C rss Turn-on delay time t d(on) V DD =5V, V GS =4.5V, ns Rise time t r I D =.44, R G =5W Turn-off delay time t d(off) Fall time t f Gate Charge Characteristics Gate to source charge Q gs V DD =24V, I D = nc Gate to drain charge Q gd Gate charge total Q g V DD =24V, I D =.8, V GS = to V Gate plateau voltage V (plateau) V DD =24V, I D = V Reverse Diode Inverse diode continuous forward current I S T =25 C Inv. diode direct current, pulsed I SM Inverse diode forward voltage V SD V GS =, I F = I S V Reverse recovery time t rr V R =25V, I F =l S, ns Reverse recovery charge Q rr di F /dt=/µs nc Page

4 Power dissipation P tot = f (T ).9 W 2 Drain current I D = f (T ) parameter: V GS ³ V Ptot.2 ID C 6 T C 6 T 3 Safe operating area I D = f ( V DS ) parameter : D =, T = 25 C R DS(on) = V DS / I D t p = 5.µs ms 4 Transient thermal impedance Z thj = f (t p ) parameter : D = t p /T 2 K/W ID ms ZthJ D = DC - single pulse V 2 V DS Page s 4 t p

5 5 Typ. output characteristic I D = f (V DS ) parameter: T j = 25 C, V GS 6 Typ. drain-source on resistance R DS(on) = f (I D ) parameter: Tj = 25 C, V GS ID V 6V 7V V 4.2V 3.8V RDS(on).8 W 5V 6V.4 7V V.2 2.4V 2.8V 3V 3.4V 3.8V4.2V V 3V V 2.4V V 5 V DS 7 Typ. transfer characteristics I D = f ( V GS ); V DS ³ 2 x I D x R DS(on)max parameter: Tj = 25 C I D 8 Typ. forward transconductance g fs = f(i D ) parameter: Tj = 25 C 2.5 S ID.5 gfs V 4 V GS V 3.6 I D Page

6 9 Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D =.8, V GS = V.75 W.6 Typ. gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS ; I D = m 2.2 V.8 98% RDS(on) VGS(th) typ % typ.8.6 2% C C 6 T j T j Typ. capacitances C = f (V DS ) parameter: V GS =, f= MHz, Tj = 25 C 3 2 Forward character. of reverse diode I F = f (V SD ) parameter: T j pf Ciss Coss IF C 2 Crss - T j = 25 C typ T j = 5 C typ T j = 25 C (98%) T j = 5 C (98%) V 3 V DS Page V 3 V SD

7 3 Typ. avalanche energy E S = f (T j ) par.: I D = 3.9, V DD = 25 V, R GS = 25 W 6 mj 4 Typ. gate charge V GS = f (Q G ); parameter: V DS, I D =.8 pulsed, T j = 25 C 6 V 2 ES 4 VGS VDS max.5 V DS max.8 V DS max C 6 T j nc 24 Q G 5 Drain-source breakdown voltage V (BR)DSS = f (T j ) V 6 V(BR)DSS C 8 T j Page

8 Published by Infineon Technologies G, Bereichs Kommunikation St.-Martin-Strasse 53, D-854 München Infineon Technologies G 999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page