Maximum Ratings Parameter Symbol Value Unit SPP Continuous drain current
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1 SPPN8C SPN8C Cool MOS Power Transistor V DS 8 V Feature R DS(on). Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance PG-TO---: Fully isolated package ( VC; minute) PG-TO-- PG-TO P-TO-- Type Package Ordering Code SPPN8C PG-TO Q67-S SPN8C PG-TO-- SP6 Marking N8C N8C Maximum Ratings Parameter Symbol Value Unit SPP Continuous drain current T C = C I D T C = C. SP ). ) Pulsed drain current, t p limited by T jmax I D puls valanche energy, single pulse E S 7 7 mj I D =.8, V DD =V valanche energy, repetitive t R limited by T ) jmax E R.. I D =, V DD =V valanche current, repetitive t R limited by T jmax I R Gate source voltage V GS ± ± V Gate source voltage C (f >Hz) V GS ± ± Power dissipation, T C = C P tot 6 8 W Operating and storage temperature T j, T stg C Rev.. Page -8-
2 SPPN8C SPN8C Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt V/ns V DS = 6 V, I D =, T j = C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case R thjc - - K/W Thermal resistance, junction - case, FullPK R thjc_fp - - Thermal resistance, junction - ambient, leaded R thj Thermal resistance, junction - ambient, FullPK R thj_fp Soldering temperature, wavesoldering.6 mm (.6 in.) from case for s ) T sold C Electrical Characteristics, at T j = C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V (BR)DSS V GS =V, I D =.m V Drain-Source avalanche V (BR)DS V GS =V, I D = breakdown voltage Gate threshold voltage V GS(th) I D =µ, V GS =V DS..9 Zero gate voltage drain current I DSS V DS =8V, V GS =V, µ T j = C T j = C Gate-source leakage current I GSS V GS =V, V DS =V - - n Drain-source on-state resistance R DS(on) V GS =V, I D =. T j = C T j = C Ω Gate input resistance R G f=mhz, open drain Rev.. Page -8-
3 SPPN8C SPN8C Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Transconductance g fs V DS *I D *R DS(on)max, - - S I D =. Input capacitance C iss V GS =V, V DS =V, pf Output capacitance C oss f=mhz - - Reverse transfer capacitance C rss - - Effective output capacitance, ) C o(er) V GS =V, energy related V DS =V to 8V Effective output capacitance, ) C o(tr) time related Turn-on delay time t d(on) V DD =V, V GS =/V, - - ns Rise time t r I D =, - - Turn-off delay time t d(off) R G =Ω Fall time t f - 6 Gate Charge Characteristics Gate to source charge Q gs V DD =6V, I D = -. - nc Gate to drain charge Q gd - - Gate charge total Q g V DD =6V, I D =, - 6 V GS = to V Gate plateau voltage V (plateau) V DD =6V, I D = V Limited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PV =E R *f. Soldering temperature for TO-6: C, reflow Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Rev.. Page -8-
4 SPPN8C SPN8C Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous I S T C = C - - forward current Inverse diode direct current, pulsed I SM - - Inverse diode forward voltage V SD V GS =V, I F =I S -. V Reverse recovery time t rr V R =6V, I F =I S, - - ns Reverse recovery charge Q rr di F /dt=/µs - - µc Peak reverse recovery current I rrm - - Peak rate of fall of reverse recovery current di rr /dt T j = C - - /µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPP SP SPP SP R th.. K/W C th Ws/K R th.6.6 C th.6.6 R th.. C th.7.7 R th..7 C th.. R th.. C th..669 R th6..7 C th6.6. P tot (t) T j R th R th,n Tcase External Heatsink C th C th C th,n T amb Rev.. Page -8-
5 SPPN8C SPN8C Power dissipation P tot = f (T C ) Power dissipation FullPK P tot = f (T C ) 7 SPPN8C W 6 W Ptot Ptot 6 8 C C 6 T C T C Safe operating area I D = f ( V DS ) parameter : D =, T C = C Safe operating area FullPK I D = f (V DS ) parameter: D =, T C = C ID ID - tp =. ms tp =. ms tp =. ms tp = ms DC - tp =. ms tp =. ms tp =. ms tp = ms tp = ms DC - V V DS - V V DS Rev.. Page -8-
6 SPPN8C SPN8C Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T K/W 6 Transient thermal impedance FullPK Z thjc = f (t p ) parameter: D = t p /t K/W ZthJC ZthJC - - D =. D =. D =. D =. D =. D =. single pulse - - D =. D =. D =. D =. D =. D =. single pulse s - t p 7 Typ. output characteristic I D = f (V DS ); T j = C parameter: t p = µs, V GS s t p 8 Typ. output characteristic I D = f (V DS ); T j = C parameter: t p = µs, V GS 6. 9 V 8V 7V.. V 6.V 6V ID V ID..V 6 6V. V.V..V V V 8 6 V 6 V DS V. 8 6 V 6 V DS Rev.. Page 6-8-
7 SPPN8C SPN8C 9 Typ. drain-source on resistance R DS(on) =f(i D ) parameter: T j = C, V GS Ω Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D =., V GS = V SPPN8C 7. Ω R DS(on) 9 V.V V RDS(on) V 6V V... 98% typ C 8 I D T j Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs C Typ. gate charge V GS = f (Q Gate ) parameter: I D = pulsed 6 SPPN8C V ID 9 8 VGS, V DS max,8 V DS max 7 6 C V V GS nc Q Gate Rev.. Page 7-8-
8 SPPN8C SPN8C Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs SPPN8C valanche SO I R = f (t R ) par.: T j C IF IR. T j = C typ T j = C typ T j = C (98%) T j = C (98%).. T j(strt) = C T j(strt) = C V V SD valanche energy E S = f (T j ) par.: I D =.8, V DD = V 8 mj µs t R 6 Drain-source breakdown voltage V (BR)DSS = f (T j ) 98 SPPN8C V 9 ES V(BR)DSS C C 8 T j T j Rev.. Page 8-8-
9 SPPN8C SPN8C 7 valanche power losses P R = f (f ) parameter: E R =.mj W 8 Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz pf PR C C iss C oss C rss Hz 6 f 6 V 8 V DS 9 Typ. C oss stored energy E oss =f(v DS ). µj. Eoss... 6 V 8 V DS Rev.. Page 9-8-
10 SPPN8C SPN8C Definition of diodes switching characteristics Rev.. Page -8-
11 SPPN8C SPN8C PG-TO--, PG-TO-- Rev.. Page -8-
12 SPPN8C SPN8C PG-TO-- (FullPK) Rev.. Page -8-
13 SPPN8C SPN8C Published by Infineon Technologies G, Bereichs Kommunikation St.-Martin-Strasse, D-8 München Infineon Technologies G 999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.. Page -8-
Final data P-TO Maximum Ratings Parameter Symbol Value Unit I D
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CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Product Summary V DS @ T J =25 C 9 V R DS(on),max @ T J = 25 C.5 Ω Q g,typ 68 nc Qualified
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CoolMOS Power Transistor Features Product Summary V DS @ T j,max 65 V Lowest figure-of-merit R ON xq g R DS(on),max @T j = 25 C.25 Ω Ultra low gate charge 6.6 Q g,typ Extreme dv/dt rated 26 nc High peak
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SPP15N6CFD CoolMOS TM Power Transistor Features Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated High peak current capability Product
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Type SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic level BSS131 Product Summary V DS 24 V R DS(on),max 14 Ω I D.1 A dv /dt rated Pb-free lead-plating; RoHS compliant PG-SOT-23
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CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 W Q g,typ 1 nc Qualified
More informationRev Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D
SIPMOS PowerTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant Product Summary V DS 4 V R DS(on) 25 Ω I D.17 SOT223 Type Package Tape and Reel Information
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CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 25 C.29 Ω Q g,typ 88 nc Qualified
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IPP9R1K2C3 CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More informationType Package Pb-free Tape and Reel Information SN7002N PG-SOT-23 Yes H6327: 3000 pcs/reel SN7002N
SN72N SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Qualified according to EC Q Halogen-free according to IEC6249-2-2 Gate pin Product Summary V DS 6 V R DS(on)
More informationProduct Summary Drain source voltage V DS -60 V Drain-source on-state resistance R DS(on) 8 W Continuous drain current I D A
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 8 W Continuous
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CoolMOS TM Power Transistor Features Worldwide best R DS,on in TO22 Lowest figure of merit R ON x Q g Ultra low gate charge Product Summary V DS @T jmax 55 V R DS(on),max.14 Ω Q g,typ 48 nc Extreme dv/dt
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CoolMOS TM Power Transistor Features Lowest figure of merit R ON x Q g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @T jmax 55 V R DS(on),max.52 Ω Q g,typ 13 nc High peak current capability
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CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for industrial applications Pb-free lead plating; RoHS
More informationProduct Summary Drain source voltage. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 2 W Continuous
More information14.5 Pulsed drain current. 200 Gate source voltage V GS ± 20 V ESD-Sensitivity HBM as per MIL-STD 883 Class 1 Power dissipation
SIPMOS Power Transistor BUZ 31 H N channel Enhancement mode valanche-rated Normal Level Pin 1 Pin 2 Pin 3 G D S Type V DS R DS(on) Package Pb-free BUZ 31 H 2 V 14.5.2 Ω PG-TO-22-3 Yes Maximum Ratings Parameter
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OptiMOS Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q11 qualified MSL1 up to 26 C peak reflow 175 C operating temperature Green package (lead free) Product Summary V DS 75 V R
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BSS67S2L OptiMOS Buck converter series Feature NChannel Logic Level valanche rated ) Enhancement mode Qualified according to EC Q Halogenfree according to IEC624922 Product Summary V DS 55 V R DS(on) 65
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CoolMOS Power Transistor Product Summary V DS 6 V R DS(on),max.45 Ω Features Q g,typ 15 nc Worldwide best R ds,on in TO247 Ultra low gate charge Extreme dv/dt rated PG-TO247-3 High peak current capability
More informationProduct Summary Drain source voltage. Lead free Yes I D. I D puls -320 E AS. P tot 340 W
SPB8P6P G SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Pbfree lead plating: RoHS compliant Halogenfree according to IEC61249221 Qualified
More informationFeatures N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1
Features N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 3 2 Pin 1 2 3 G D S Type V DS I D R DS(on) Package Ordering
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SPP18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175 C operating temperature Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A PG-TO22-3 Type Package
More informationRev Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
SIPMOS SmallSignalTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant Qualified according to EC Q Product Summary V DS V R DS(on) 6 Ω I D.37 PGSOT3
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IPB8N6S2L-11 IPP8N6S2L-11, IPI8N6S2L-11 OptiMOS Power-Transistor Features N-channel Logic Level - Enhancement mode Automotive AEC Q11 qualified MSL1 up to 26 C peak reflow Product Summary V DS 55 V R DS(on),max
More informationPackage Ordering Code BTS 282 Z 49 V 6.5 m P-TO Q67060-S6004-A2 P-TO Q67060-S6005-A2 P-TO Q67060-S6007.
Speed TEMPFET NChannel Enhancement mode Logic Level Input nalog driving possible Fast switching up to MHz 7 VPT5754 7 VPT567 Potentialfree temperature sensor with thyristor characteristics Overtemperature
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查询 BTS130 供应商 TEMPFET BTS 130 Features N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 2 3 G D S Type V DS I D R
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Features N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 2 3 G D S Type V DS I D R DS(on) Package Ordering
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SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode / Logic level Avalanche rated Product Summary V DS - V R DS(on),max.8 W I D -.36 A Pb-free lead plating; RoHS compliant Footprint compatible
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SPB18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A dv /dt rated 175 C operating temperature PG-TO63-3 Halogen-free
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OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating
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IPB26CN1N G IPD25CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max
More informationIDB30E120. Fast Switching Emitter Controlled Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Emitter Controlled Diode Feature 1200 V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM
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IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4
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SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode Logic level Product Summary V DS - V R DS(on),max 8 mw I D - A Avalanche rated Pb-free lead plating; RoHS compliant PG-SOT-3 Qualified
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