Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
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1 SPU7N6S5 SPD7N6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO5 and TO5 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance R DS(on).6 Ω I D 7.3 A PGTO5 PGTO5 3 3 Type Package Ordering Code SPU7N6S5 PGTO5 Q674S496 SPD7N6S5 PGTO5 Q674S486 Marking 7N6S5 7N6S5 Maximum Ratings Parameter Symbol Value Unit Continuous drain current I D A T C = 5 C T C = C Pulsed drain current, t p limited by T jmax I D puls 4.6 Avalanche energy, single pulse I D = A, V DD = 5 V E AS 3 mj Avalanche energy, repetitive t AR limited by T ) jmax E AR.5 I D = 7.3 A, V DD = 5 V Avalanche current, repetitive t AR limited by T jmax I AR 7.3 A Gate source voltage V GS ± V Gate source voltage AC (f >Hz) V GS ±3 Power dissipation, T C = 5 C P tot 83 W Operating and storage temperature T j, T stg C Rev..6 Page 35
2 Maximum Ratings SPU7N6S5 SPD7N6S5 Parameter Symbol Value Unit Drain Source voltage slope V DS = 48 V, I D = 7.3 A, T j = 5 C Thermal Characteristics dv/dt V/ns Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction case R thjc.5 K/W Thermal resistance, junction ambient, leaded R thja 75 SMD version, device on min. 6 cm cooling area ) Soldering temperature, *).6 mm (.63 in.) from case for s R thja Electrical Characteristics, at Tj=5 C unless otherwise specified 75 5 T sold 6 C Parameter Symbol Conditions Values Unit min. typ. max. Drainsource breakdown voltage V (BR)DSS V GS =V, I D =.5mA 6 V DrainSource avalanche breakdown voltage V (BR)DS V GS =V, I D =7.3A 7 Gate threshold voltage V GS(th) I D =35µΑ, V GS =V DS Zero gate voltage drain current I DSS V DS =6V, V GS =V, T j =5 C, T j =5 C Gatesource leakage current I GSS V GS =V, V DS =V na Drainsource onstate resistance R DS(on) V GS =V, I D =4.6A, T j =5 C T j =5 C Gate input resistance R G f=mhz, open Drain 9.6 µa Ω *) TO5: reflow soldering, MSL; TO5: wavesoldering Rev..6 Page 35
3 Electrical Characteristics, at T j = 5 C, unless otherwise specified SPU7N6S5 SPD7N6S5 Parameter Symbol Conditions Values Unit Characteristics Transconductance g fs V DS *I D *R DS(on)max, I D =4.6A Input capacitance C iss V GS =V, V DS =5V, min. typ. max. 4 S 97 pf Output capacitance C oss f=mhz 37 Reverse transfer capacitance C rss Effective output capacitance, 3) energy related Effective output capacitance, 4) time related C o(er) V GS =V, V DS =V to 48V 3 pf C o(tr) 55 Turnon delay time t d(on) V DD =35V, V GS =/V, ns Rise time t r I D =7.3A, R G =Ω 4 Turnoff delay time t d(off) 7 55 Fall time t f 3 Gate Charge Characteristics Gate to source charge Q gs V DD =35V, I D =7.3A 7.5 nc Gate to drain charge Q gd 6.5 Gate charge total Q g V DD =35V, I D =7.3A, V GS = to V 7 35 Gate plateau voltage V (plateau) V DD =35V, I D =7.3A 8 V Repetitve avalanche causes additional power losses that can be calculated as PAV =E AR *f. Device on 4mm*4mm*.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. 3 Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. 4 Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from to 8% V DSS. Rev..6 Page 3 35
4 Electrical Characteristics, at T j = 5 C, unless otherwise specified SPU7N6S5 SPD7N6S5 Parameter Symbol Conditions Values Unit Inverse diode continuous forward current Inverse diode direct current, pulsed min. typ. max. I S T C =5 C 7.3 A I SM 4.6 Inverse diode forward voltage V SD V GS =V, I F =I S. V Reverse recovery time t rr V R =35V, I F =I S, ns Reverse recovery charge Q rr di F /dt=a/µs 4.9 µc Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Thermal capacitance R th.4 K/W C th. Ws/K R th.46 C th.4578 R th3.85 C th3.645 R th4.38 C th4.867 R th5.37 C th R th6. C th6.45 P tot (t) T j R th R th,n Tcase External Heatsink C th C th C th,n T amb Rev..6 Page 4 35
5 SPU7N6S5 SPD7N6S5 Power dissipation P tot = f (T C ) SPU7N6S5 W Safe operating area I D = f ( V DS ) parameter : D =, T C =5 C A 8 7 Ptot 6 ID tp =. ms tp =. ms tp =. ms tp = ms DC C 6 T C 3 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 5 V 3 V DS 4 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS A V V A V V V 9V ID 5 V ID 8 8.5V 9V 6 8V 7.5V 4 8V 7V 5 7V 6.5V 6V 5 5 V 5 V DS Rev..6 Page V 5 V DS 35
6 SPU7N6S5 SPD7N6S5 5 Typ. drainsource on resistance R DS(on) =f(i D ) parameter: T j =5 C, V GS 3 6 Drainsource onstate resistance R DS(on) = f (T j ) parameter : I D = 4.6 A, V GS = V 3.4 SPU7N6S5 Ω RDS(on) mω V V V 9V.5 8.5V 8V 7.5V 7V 6.5V 6V A 4 I D RDS(on) % typ C 8 T j 7 Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs 4 A 8 Typ. gate charge V GS = f (Q Gate ) parameter: I D = 7.3 A pulsed 6 SPU7N6S5 V. V DS max 8.8 V DS max ID C 5 C VGS V V GS Rev..6 Page nc 38 Q Gate 35
7 SPU7N6S5 SPD7N6S5 9 Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs A SPU7N6S5 Avalanche SOA I AR = f (t AR ) par.: T j 5 C 8 A 6 IF IAR 5 Tj(START)=5 C 4 T j = 5 C typ T j = 5 C typ 3 Tj(START)=5 C T j = 5 C (98%) T j = 5 C (98%) V 3 V SD Avalanche energy E AS = f (T j ) par.: I D = A, V DD = 5 V 6 mj 3 µs 4 t AR Drainsource breakdown voltage V (BR)DSS = f (T j ) 7 SPU7N6S5 V EAS 8 6 V(BR)DSS C C 8 T j T j Rev..6 Page 7 35
8 SPU7N6S5 SPD7N6S5 3 Avalanche power losses P AR = f (f ) parameter: E AR =.5mJ 3 W 4 Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz 4 pf 3 C iss PAR C 5 C oss 5 C rss 4 5 MHz 6 f 3 4 V 6 V DS 5 Typ. C oss stored energy E oss =f(v DS ) 5.5 µj Eoss V 6 V DS Rev..6 Page 8 35
9 SPU7N6S5 SPD7N6S5 Definition of diodes switching characteristics Rev..6 Page 9 35
10 SPU7N6S5 SPD7N6S5 PGTO53, PGTO53, PGTO53 (DPAK) Rev..6 Page 3 5
11 SPU7N6S5 SPD7N6S5 PGTO53, PGTO53 (IPAK) Rev..6 Page 3 5
12 SPU7N6S5 SPD7N6S5 Rev..6 Page 3 5
Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
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SIPMOS PowerTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant Product Summary V DS 4 V R DS(on) 25 Ω I D.17 SOT223 Type Package Tape and Reel Information
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reliminary data SIMOS SmallSignalTransistor Features Dual and Channel Enhancement mode valanche rated dv/dt rated roduct Summary Drain source voltage DS 6 6 DrainSource onstate R DS(on).. Ω resistance
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SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level valanche rated dv/dt rated Product Summary V DS -6 V R DS(on) 8 W I D -.17 PG-SOT-3 3 Qualified according to EC Q11 Halogen-free
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SPB18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A dv /dt rated 175 C operating temperature PG-TO63-3 Halogen-free
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Rev.. SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode, Logic Level dv/dt rated Pb-free lead plating; RoHS compliant Qualified according to EC Q Halogen free according to IE C649 Product
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SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Gate pin Product Summary V DS -25 V R DS(on) 2 Ω I D -.9 Drain pin 2 Source pin 3 3 SOT89 2 2 VPS562 Type Package
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