OptiMOS &!Power-Transistor
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- Buddy Singleton
- 5 years ago
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1 OptiMOS &!Power-Transistor Feature % N-Channel % Enhancement mode % Logic Level % High Current Rating % Excellent Gate Charge x R DS(on) product (FOM) %!Superior thermal resistance %!175 C operating temperature % Avalanche rated % dv/dt rated Ugkwj j qj fiuqfynsl@w tm X htruqnfsy Product Summary V DS V R DS(on) 6.4 m" I D A Ph- TO5-3 Type Package SPDN3SL-6 L Ph- TO5-3 Marking PN3L6 Maximum Ratings, at = 5 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current1) I D A T C =5 C Pulsed drain current I D puls T C =5 C Avalanche energy, single pulse E AS mj I D = A, V DD =5V, R GS =5" Repetitive avalanche energy, limited by max ) E AR 13 Reverse diode dv/dt dv/dt 6 kv/µs I S =A, V DS =4V, di/dt=a/µs, max =175 C Gate source voltage V GS ± V Power dissipation P tot 136 W T C =5 C Operating and storage temperature, T stg C IEC climatic category; DIN IEC /175/56 Page 1
2 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R thjc K/W Thermal resistance, junction - ambient, leaded R thja - - SMD version, device on min. footprint R thja cm cooling area 3) - - Electrical Characteristics, at = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V (BR)DSS - - V V GS =V, I D =1mA Gate threshold voltage, V GS = V DS V GS(th) I D = 85 µa Zero gate voltage drain current I DSS - µa V DS =V, V GS =V, =5 C.1 1 V DS =V, V GS =V, =15 C - Gate-source leakage current I GSS - 1 na V GS =V, V DS =V Drain-source on-state resistance R DS(on) m" V GS =4.5V, I D =A Drain-source on-state resistance R DS(on) V GS =V, I D =A 1Current limited by bondwire ; with an R thjc = 1.1K/W the chip is able to carry I D = 113A at 5 C, for detailed information see app.-note ANPS71E available at Defined by design. Not subject to production test. 3Device on mm*mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Page
3 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS $*I D *R DS(on)max, S I D =A Input capacitance C iss V GS =V, V DS =5V, pf Output capacitance C oss f=1mhz Reverse transfer capacitance C rss Turn-on delay time t d(on) V DD =15V, V GS =V, ns Rise time t r I D =A, Turn-off delay time t d(off) R G =3.6" Fall time t f Gate Charge Characteristics Gate to source charge Q gs V DD =4V, I D =A nc Gate to drain charge Q gd Gate charge total Q g V DD =4V, I D =A, V GS = to V Gate plateau voltage V (plateau) V DD =4V, I D =A V Reverse Diode Inverse diode continuous I S T C =5 C - - A forward current Inv. diode direct current, pulsed I SM - - Inverse diode forward voltage V SD V GS =V, I F =A V Reverse recovery time t rr V R =15V, I F =l S, ns Reverse recovery charge Q rr di F /dt=a/µs nc Page 3
4 1 Power dissipation P tot = f (T C ) parameter: V GS $ 4 V 1 SPDN3SL-6 W Drain current I D = f (T C ) parameter: V GS $ V 55 SPDN3SL-6 A P tot 9 8 ID C 19 T C C 19 T C 3 Safe operating area I D = f ( V DS ) parameter : D =, T C = 5 C A 3 SPDN3SL-6 t p = 7.6µs µs 4 Max. transient thermal impedance Z thjc = f (t p ) parameter : D = tp/t K/W 1 SPDN3SL-6 ID ZthJC -1 µs - D = ms..5-3 single pulse V V DS Page s t p
5 5 Typ. output characteristic I D = f (V DS ); =5 C parameter: t p = 8 µs ID 1 SPDN3SL-6 Ptot = 136W A i h V GS [V] V 5 V DS 7 Typ. transfer characteristics I D = f ( V GS ); V DS $ x I D x R DS(on)max parameter: t p = 8 µs 6 A 45 g e c a d b a.6 b.8 c 3. d 3. e 3.4 f 3.6 g 3.8 f h 4.5 i. 6 Typ. drain-source on resistance R DS(on) = f (I D ) parameter: V GS =V R DS(on) " 1 SPDN3SL V GS [V] = d e f 3.6 d g 3.8 h 4.5 e i. 6 7 A 85 I D 8 Typ. forward transconductance g fs = f(i D ); =5 C parameter: g fs 9 S 7 f g i h ID 35 gfs V 4 V GS 6 8 A 1 I D Page 5
6 9 Drain-source on-state resistance R DS(on) = f ( ) parameter : I D = A, V GS = V " 15 SPDN3SL-6 Typ. gate threshold voltage V GS(th) = f ( ) parameter: V GS = V DS.5 R DS(on) % VGS(th) V #A.415 ma typ C -6-6 C Typ. capacitances C = f (V DS ) parameter: V GS =V, f=1 MHz 4 1 Forward character. of reverse diode I F = f (V SD ) parameter:, tp = 8 µs 3 SPDN3SL-6 A pf C iss C IF 3 C oss C rss 1 = 5 C typ = 175 C typ = 5 C (98%) = 175 C (98%) 5 15 V V DS Page V 3 V SD
7 13 Typ. avalanche energy E AS = f ( ) par.: ID = A, V DD = 5 V, R GS = 5 " 6 mj 14 Typ. gate charge V GS = f (Q Gate ) parameter: ID = A pulsed 16 SPDN3SL-6 V EAS VGS 1 8, V DS max,8 V DS max C nc 8 Q Gate 15 Drain-source breakdown voltage V (BR)DSS = f ( ) parameter: ID= ma 36 SPDN3SL-6 V V(BR)DSS C Page 7
8 Package outline: PG-TO5-3 Page 8
9 SPDN3SL-6 Page 9
10 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: SPDN3SL-6 G
SPD30N06S2L-13 OptiMOS Power-Transistor
SPD3N6S2L13 OptiMOS PowerTransistor Feature NChannel Enhancement mode Logic Level 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 13 mω 3 P TO252 311 Type Package
OptiMOS =Power-Transistor
SPB8N6SL-7 OptiMOS =Power-Transistor Features N-Channel Enhancement mode valanche rated Logic Level dv/dt rated =175 C operating temperature Product Summary Drain source voltage V DS 55 V Drain-source
SPD50N03S2-07 OptiMOS Power-Transistor
OptiMOS PowerTransistor Feature NChannel Enhancement mode Excellent Gate Charge x R DS(on) product (FOM) Superior thermal resistance 175 C operating temperature valanche rated dv/dt rated Product Summary
BSO604NS2 OptiMOS Power-Transistor
BSO6NS OptiMOS Power-Transistor Feature Dual N-Channel Enhancement mode Logic Level 5 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 35 mω I D 5 P-DSO-8-7 Type Package
Product Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D.
SIPMOS Power Transistor Features N channel Enhancement mode valanche rated dv/dt rated Product Summary Drain source voltage V DS V DrainSource onstate resistance R DS(on). Ω Continuous drain current I
SPD30N08S2-22 OptiMOS Power-Transistor
SPD3N8S222 OptiMOS PowerTransistor Feature NChannel Enhancement mode 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 75 V R DS(on) 21.5 mω 3 P TO252 311 Type Package Ordering
OptiMOS =Power-Transistor
SPI8N8S7 SPP8N8S7,SPB8N8S7 OptiMOS =PowerTransistor Feature NChannel Enhancement mode 75 C operating temperature valanche rated Product Summary V DS 75 V R DS(on) max. SMD version 7. m I D 8 P TO6 3 P
SPP80N06S2L-07 SPB80N06S2L-07 OptiMOS Power-Transistor
SPP8N6S2L7 SPB8N6S2L7 OptiMOS PowerTransistor Feature NChannel Enhancement mode Logic Level 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 7 mω 8 P TO263 32 P
Maximum Ratings, att j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. IDpulse 88 E AS 90.
SIPMOS PowerTransistor Features N channel Enhancement mode valanche rated dv/dt rated 75 C operating temperature Product Summary Drain source voltage V DS 55 V DrainSource onstate resistance R DS(on).5
Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current 1) I D. I D puls 320.
SPP8N6S5 SPB8N6S5 OptiMOS PowerTransistor Feature NChannel Enhancement mode 75 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) max. SMD version.8 m I D 8 P TO63 3
Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPUN6S5 SPDN6S5 Cool MOS Power Transistor V DS 6 V Feature R DS(on). Ω New revolutionary high voltage technology I D. A Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective
Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPUN6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved
Preliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (. V rated) C operating temperature valanche rated dv/dt rated Product Summary V DS - V R DS(on) 7 mω I D -. SOT-
Preliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -2.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS - V R DS(on) 55 mω I D -.58
Product Summary Drain source voltage. Pin 1 Pin2/4 PIN 3 G D S
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Qualified according to EC Q Halogen free according to IEC6249 2 2 Product Summary Drain source voltage
Product Summary Drain source voltage. Lead free Yes I D. I D puls -320 E AS. P tot 340 W
SPB8P6P G SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Pbfree lead plating: RoHS compliant Halogenfree according to IEC61249221 Qualified
OptiMOS Power-Transistor
OptiMOS Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q11 qualified MSL1 up to 26 C peak reflow 175 C operating temperature Green package (lead free) Product Summary V DS 75 V R
Preliminary data. Type Package Ordering Code Tape and Reel Information BSP 317 P SOT-223 Q67042-S4167 -
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Gate pin Product Summary V DS -5 V R DS(on) 4 Ω I D -.43 Drain pin /4 Source pin 3 SOT-3 4 3 VPS563 Type Package
Maximum Ratings, at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current E AS. P tot 0.36 W
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level valanche rated dv/dt rated Product Summary V DS -6 V R DS(on) 8 W I D -.17 PG-SOT-3 3 Type Package Tape and Reel Marking 1
BSS84P. SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated. Class 0
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level valanche rated dv/dt rated Product Summary V DS -6 V R DS(on) 8 W I D -.17 PG-SOT-3 3 Qualified according to EC Q11 Halogen-free
SPB03N60S5. Cool MOS Power Transistor V DS 600 V
SPB3N6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved
Rev 1.2. Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode dv/dt rated Pb-free lead plating; RoHS compliant Product Summary V DS 6 V R DS(on).3 W I D.8 PG-SOT-223 4 2 3 VPS563 Type Package Tape
BSP316P. SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated
BSP36P SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Qualified according to EC Q Halogen free according to IE C649 Gate pin Product Summary V DS - V R DS(on).8
BSL211SP. Rev 2.0. Product Summary V DS -20 V R DS(on) 67 mω I D -4.7 A. Type Package Tape and reel BSL211SP P-TSOP6-6 H6327: 3000pcs/r.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Pb-free lead plating; RoHS compliant Qualified
SPP20N60S5. Cool MOS Power Transistor V DS 600 V
SPPN6S Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective
Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. I D puls E AS. dv/dt 6 kv/µs.
IPD6N3LZ OptiMOS PowerTransistor Feature Ideal for highfrequency dc/dc converters nchannel Logic Level Excellent Gate Charge x R DS(on) product (FOM) Low OnResistance R DS(on) Superior thermal resistance
SPP08P06P H. SIPMOS Power-Transistor V DS -60 V I D T C = 25 C T C = 100 C. I D puls E AS I D = -8.8 A, V DD = -25 V, R GS = 25 W
H SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on).3
Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPU7N6S5 SPD7N6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO5 and TO5 Ultra low gate charge Periodic avalanche rated Extreme dv/dt
Preliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
SPB8P6P SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on).23
OptiMOS 2 Power-Transistor
BSC79N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary
OptiMOS 2 Power-Transistor
IPI3N3LA, IPP3N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V
BSS 223PW. ESD Class; JESD22-A114-HBM Class 0. Product Summary V DS -20 V R DS(on) 1.2 Ω I D A. Qualified according to AEC Q101
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS -2 V R DS(on).2 Ω I D -.39
OptiMOS 2 Power-Transistor
OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC 1) for target application N-channel, logic level Product Summary V DS 25 V R DS(on),max (SMD version)
Cool MOS Power Transistor
Cool MOS Power Transistor New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Optimized capacitances Improved noise immunity Final data P-TO5 SPUNS5
OptiMOS TM 3 Power-Transistor
IPB2N25N3 G OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 25 V R DS(on),max 2 mw I D
OptiMOS Power-Transistor
IPB8N6S2L-11 IPP8N6S2L-11, IPI8N6S2L-11 OptiMOS Power-Transistor Features N-channel Logic Level - Enhancement mode Automotive AEC Q11 qualified MSL1 up to 26 C peak reflow Product Summary V DS 55 V R DS(on),max
BSS670S2L. OptiMOS Buck converter series. Product Summary. Feature V DS 55 V. R DS(on) 650 mω. Enhancement mode I D 0.54 A. Logic Level.
BSS67S2L OptiMOS Buck converter series Feature NChannel Enhancement mode Logic Level Product Summary V DS 55 V R DS(on) 65 mω I D.54 PGSOT 23 Type Package Ordering Code BSS67S2L PGSOT 23 Q6742S452 Marking
Cool MOS Power Transistor
Cool MOS Power Transistor New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Optimized capacitances Improved noise immunity Final data SPI7N6S5
Preliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls 5.
Cool MOS =Power Transistor =New revolutionary high voltage technology Ultra low gate charge =Periodic avalanche rated Extreme dv/dt rated =Optimized capacitances =Improved noise immunity =Former development
SPN01N60C3. Cool MOS Power Transistor V T jmax 650 V
SPNN6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances Improved transconductance
OptiMOS -P2 Power-Transistor Product Summary
OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on) 4.5 mω Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 26 C peak reflow I D -9 A PG-TO252-3-11 175 C operating
BSS670S2L. OptiMOS Buck converter series. Avalanche rated 1) Qualified according to AEC Q101 Halogen-free according to IEC
BSS67S2L OptiMOS Buck converter series Feature NChannel Logic Level valanche rated ) Enhancement mode Qualified according to EC Q Halogenfree according to IEC624922 Product Summary V DS 55 V R DS(on) 65
OptiMOS Power-Transistor
OptiMOS Power-Transistor Features For fast switching converters and sync. rectification N-channel enhancement - logic level 175 C operating temperature Product Summary V DS 6 V R DS(on),max SMDversion
OptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 7.3 mω Features N-channel - Enhancement mode AEC qualified I D 5 A PG-TO252-3-33 MSL up to 26 C peak reflow 75 C operating temperature
SIPMOS Power-Transistor
SPP18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175 C operating temperature Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A PG-TO22-3 Type Package
Product Summary Drain source voltage V DS -60 V Drain-source on-state resistance R DS(on) 8 W Continuous drain current I D A
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 8 W Continuous
OptiMOS -P Small-Signal-Transistor
SPD5P3L OptiMOS -P Small-Signal-Transistor Features P-Channel Enhancement mode Logic level Product Summary V DS -3 V R DS(on),max 7 mω I D -5 A 175 C operating temperature Avalanche rated dv /dt rated
OptiMOS TM 3 Power-Transistor
OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 15 V R DS(on),max (TO263) 1.8 mw I D 83
OptiMOS 2 Power-Transistor
IPB26CN1N G IPD25CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max
OptiMOS -P2 Power-Transistor Product Summary
OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on),max 1.5 mω I D -5 A Features P-channel - Logic Level - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 26 C peak reflow 175 C operating
Preliminary data. Type Package Ordering Code Tape and Reel Information BSS 192 P SOT89 Q67042-S4168 -
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Gate pin Product Summary V DS -25 V R DS(on) 2 Ω I D -.9 Drain pin 2 Source pin 3 3 SOT89 2 2 VPS562 Type Package
Preliminary data. Maximum Ratings,at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -0.
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V DrainSource onstate resistance R DS(on) 8 Ω Continuous
Product Summary Drain source voltage V DS -60 V Drain-source on-state resistance R DS(on) 8 W Continuous drain current I D A
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 8 W Continuous
OptiMOS TM 3 Power-Transistor
Type OptiMOS TM 3 Power-Transistor Features Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Low on-resistance R DS(on) 15 C operating temperature BSZ12DN2NS3
OptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating
OptiMOS -P2 Power-Transistor
OptiMOS -P2 Power-Transistor Product Summary V DS - V R DS(on),max.6 mw I D -5 A Features P-channel - Logic Level - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 26 C peak reflow 175 C operating
OptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 7.2 mω I D 5 A Features Dual N-channel Logic Level Common Drain - Enhancement mode PG-TO252-5 AEC qualified MSL1 up to 26 C peak reflow
Product Summary Drain source voltage. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 2 W Continuous
OptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 4.1 mω Features N-channel - Enhancement mode AEC qualified I D 9 A PG-TO252-3-313 MSL1 up to 26 C peak reflow 175 C operating temperature
OptiMOS 2 Power-Transistor
IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4
Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls E AS. P tot 0.
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 2 W Continuous
Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls 0.68.
SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Gate pin1 Product Summary V DS 1 V R DS(on) 6 Ω I D.17 Drain pin 3 Source pin 2 PG-SOT23 3 1 2 VPS5161 Type Package
OptiMOS (TM) 3 Power-Transistor
IPD96N8N3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V
BSS87. SIPMOS Small-Signal-Transistor. Rev Product Summary V DS 240 V R DS(on) 6 I D 0.26 A
Rev.. SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode, Logic Level dv/dt rated Pb-free lead plating; RoHS compliant Qualified according to EC Q Halogen free according to IE C649 Product
OptiMOS 3 Power-Transistor
IPI2N15N3 G IPP2N15N3 G OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 15 V R DS(on),max 2 mw I D 5 A Very low on-resistance
OptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max (SMD version).8 mω Features N-channel - Enhancement mode I D 2 A PG-TO263-3-2 PG-TO262-3- PG-TO22-3- AEC qualified MSL up to 26 C peak
OptiMOS 3 Power-Transistor
Type IPD135N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
SIPMOS Power-Transistor
SPB18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A dv /dt rated 175 C operating temperature PG-TO63-3 Halogen-free
OptiMOS TM Power-Transistor
Type OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target applications
OptiMOS TM Power-MOSFET
BSC16N6NS OptiMOS TM Power-MOSFET Features Optimized for synchronous rectification 1% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC 1) for target applications Pb-free
SIPMOS Small-Signal Transistor BSP 149
SIPMOS Small-Signal Transistor DS 200 I D 0.48 A R DS(on) 3.5 Ω N channel Depletion mode High dynamic resistance Available grouped in GS(th) Type Ordering Tape and Reel Information Pin Configuration Marking
OptiMOS (TM) 3 Power-Transistor
Type BSZ123N8NS3 G OptiMOS (TM) 3 Power-Transistor Package Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance Product Summary V DS 8 V
OptiMOS (TM) 3 Power-Transistor
BSZ67N6LS3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product
OptiMOS 2 Power-Transistor
BSC32N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1 for target applications Product Summary V
OptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 6 V R DS(on),max.7 mω Features N-channel - Enhancement mode I D 8 A PG-TO263-7-3 AEC Q qualified MSL up to 26 C peak reflow 75 C operating temperature
OptiMOS -T Power-Transistor Product Summary
OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS(on),max 5) 35 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-4 MSL1 up to 26 C peak reflow 175
SPN03N60C3. Cool MOS Power Transistor V T jmax 650 V
SPNN6C Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances R DS(on). Ω I D.7 A SOT-
Rev Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
SIPMOS SmallSignalTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant Qualified according to EC Q Product Summary V DS V R DS(on) 6 Ω I D.37 PGSOT3
OptiMOS TM Power-MOSFET
BSNNE2LS OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Very low parasitic inductance Low profile (
OptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 6 V R DS(on),max 9. mω Features N-channel - Enhancement mode I D 5 A PG-TO252-3-11 AEC qualified MSL1 up to 26 C peak reflow 175 C operating temperature
OptiMOS -P2 Power-Transistor
Type IPD5P4P4-13 OptiMOS -P2 Power-Transistor Package Marking Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 26 C peak reflow Product Summary V DS -4 V R DS(on) 12.6 mw I
OptiMOS -P2 Power-Transistor
OptiMOS -P2 Power-Transistor Product Summary V DS -4 V R DS(on) (SMD Version) 3.1 mw Features P-channel - Logic Level - Enhancement mode I D -12 A AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO22-3-1 MSL1
Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS
OptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V R DS(on),max 2.8 mω I D 1 A Very low on-resistance R DS(on) 175 C operating
Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. E AS 150 mj. P tot 1.
SIPMOS SmallSignalTransistor Feature PChannel Enhancement mode valanche rated dv/dt rated Ideal for fast switching buck converter Qualified according to EC Q Halogen free according to IE C69 Gate pin Drain
OptiMOS 3 Power-Transistor
BSC27N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS 4 V
OptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 1 V R DS(on),max 6.7 mw Features N-channel - Normal Level - Enhancement mode AEC qualified I D 9 A PG-TO252-3-313 TAB MSL1 up to 26 C peak reflow 175
OptiMOS Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS V R DS(on),max
OptiMOS -P Small-Signal-Transistor
OptiMOS -P Small-Signal-Transistor Features P-Channel Enhancement mode Super Logic level ( 2.5 V rated) 5 C operating temperature Avalanche rated Product Summary V DS -2 V R DS(on),max 55 mω I D -.63 A
Type Package Pb-free Tape and Reel Information SN7002N PG-SOT-23 Yes H6327: 3000 pcs/reel SN7002N
SN72N SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Qualified according to EC Q Halogen-free according to IEC6249-2-2 Gate pin Product Summary V DS 6 V R DS(on)
Rev Type Package RoHS compliant Tape and Reel Information BSP125 P-SOT-223 No
SIPMOS PowerTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant available Product Summary V DS 6 V R DS(on) 45 Ω.12 PGSOT223 Type Package RoHS compliant
OptiMOS 3 Power-MOSFET
BSC886N3LS G OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Logic level Product
OptiMOS 3 Power-Transistor
BSZ4N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS 4 V
OptiMOS TM Power-Transistor
Type IPD25N6N OptiMOS TM Power-Transistor Features Optimized for synchronous rectification % avalanche tested Superior thermal resistance N-channel, normal level Qualified according to JEDEC ) for target
OptiMOS -P2 Power-Transistor Product Summary
IPB8P3P4L-4 OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on) (SMD Version) 4.1 mω Features P-channel - Logic Level - Enhancement mode I D -8 A AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO22-3-1
OptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO 263) 4.2 mw I D 1 A
OptiMOS -3 Small-Signal-Transistor
BSLSN OptiMOS - Small-Signal-Transistor Features N-channel Enhancement mode Logic level (.V rated) Avalanche rated Product Summary V DS V R DS(on),max V GS = V mw V GS =. V 9 I D. A Qualified according
OptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS(on),max (SMD version) 3. mω Features N-channel - Enhancement mode Automotive AEC Q11 qualified I D 1 A PG-TO263-3-2 PG-TO262-3-1 PG-TO22-3-1
OptiMOS 3 Power-MOSFET
OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Product Summary V DS 3 V R DS(on),max
OptiMOS 2 + OptiMOS -P 2 Small Signal Transistor
BSZ5DCKD H OptiMOS + OptiMOS -P Small Signal Transistor Features Product Summary Complementary P + channel P Enhancement mode Super Logic level (.5V rated) Common drain Avalanche rated V DS - V R DS(on),max