BSS670S2L. OptiMOS Buck converter series. Avalanche rated 1) Qualified according to AEC Q101 Halogen-free according to IEC
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1 BSS67S2L OptiMOS Buck converter series Feature NChannel Logic Level valanche rated ) Enhancement mode Qualified according to EC Q Halogenfree according to IEC Product Summary V DS 55 V R DS(on) 65 mω I D.54 PGSOT 23 Type Package Tape and Reel BSS67S2L PGSOT 23 H6327: 3 pcs/reel Marking BSs Gate pin Drain pin 3 Source pin 2 Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T =25 C T =7 C I D Pulsed drain current T =25 C I D puls 2.2 valanche energy, single pulse I D =.54, R G = 25 Ω ) E S 8. mj Gate source voltage V GS ± 2 V Power dissipation T =25 C P tot.36 W Operating and storage temperature T j, T stg C IEC climatic category; DIN IEC 68 55/5/56 ESD Class JESD224HBM Class ) Valid from devices with date code 64 onwards Rev. 2.6 Page 22329
2 BSS67S2L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction soldering point (Pin 3) R thjs 29 K/W SMD version, device on min. 6 cm 2 cooling area 2) R thj 35 3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drainsource breakdown voltage V GS =, I D =m Gate threshold voltage, V GS = V DS I D =2.7µ V (BR)DSS 55 V V GS(th) Zero gate voltage drain current V DS =55V, V GS =, T j =25 C V DS =55V, V GS =, T j =5 C I DSS.. µ Gatesource leakage current V GS =2V, V DS =V Drainsource onstate resistance V GS =4.5V, I D =27m Drainsource onstate resistance V GS =V, I D =27m I GSS n R DS(on) mω R DS(on) ) Device on 4mm*4mm*.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.6 Page
3 BSS67S2L Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS 2*I D *R DS(on)max, I D = S Input capacitance C iss V GS =, V DS =25V, pf Output capacitance C oss f=mhz 3 8 Reverse transfer capacitance C rss 7 Turnon delay time t d(on) V DD =3V, V GS =4.5V, 9 4 ns I D =.54, Rise time t r R G =3Ω Turnoff delay time t d(off) 2 3 Fall time t f Gate Charge Characteristics Gate to source charge Q gs V DD =4V, I D = nc Gate to drain charge Q gd Gate charge total Q g V DD =4V, I D =.54, V GS = to V Gate plateau voltage V (plateau) V DD =4V, I D = V Reverse Diode Inverse diode continuous forward current I S T =25 C.38 Inv. diode direct current, pulsed I SM 2.2 Inverse diode forward voltage V SD V GS =, I F = V Reverse recovery time t rr V R =3V, I F =l S, 5 64 ns di F /dt=/µs Reverse recovery charge Q rr nc Rev. 2.6 Page
4 BSS67S2L Power dissipation P tot = f (T ) 2 Drain current I D = f (T ) parameter: V GS V.38 BSS67S2L W.6 BSS67S2L Ptot.24.2 ID C C 6 T T 3 Safe operating area I D = f ( V DS ) parameter : D =, T = 25 C 4 Transient thermal impedance Z thjs = f (t p ) parameter : D = t p /T ID BSS67S2L R DS(on) = V DS / I D t p = 23.µs µs ms ms ZthJS 3 K/W 2 BSS67S2L D = DC 2 single pulse V 2 V DS Rev. 2.6 Page s t p 22329
5 BSS67S2L 5 Typ. output characteristic I D = f (V DS ); T j =25 C parameter: t p = 8 µs 6 Typ. drainsource on resistance R DS(on) = f (I D ) parameter: V GS ID V 6V 5V 4.5V 3.5V V 5 4V 3V V DS RDS(on) mω V 4V 4.5V 5V 6V V I D 7 Typ. transfer characteristics I D = f ( V GS ); V DS 2 x I D x R DS(on)max parameter: t p = 8 µs 8 Typ. forward transconductance g fs = f(i D ); T j =25 C parameter: g fs S ID.4 gfs V 5 V GS I D Rev. 2.6 Page
6 BSS67S2L 9 Drainsource onstate resistance R DS(on) = f (T j ) parameter : I D = 27 m, V GS = V Typ. gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS 9 BSS67S2L mω V RDS(on) 4 2 VGS(th).5 2 µ µ % 4 2 typ C 8 T j Typ. capacitances C = f (V DS ) parameter: V GS =, f= MHz C 8 T j 2 Forward character. of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs 3 BSS67S2L pf 2 C iss C IF C oss C rss T j = 25 C typ T j = 5 C typ T j = 25 C (98%) T j = 5 C (98%) V 3 V DS Rev. 2.6 Page V 3 V SD 22329
7 BSS67S2L 3 Typ. gate charge V GS = f (Q Gate ) parameter: I D =.54 pulsed 4 Drainsource breakdown voltage V (BR)DSS = f (T j ) parameter: I D = m 6 BSS67S2L V 66 BSS67S2L V VGS 2 8,2 V DS max,8 V DS max V(BR)DSS nc 2.6 Q Gate C 8 T j Rev. 2.6 Page
8 BSS67S2L Published by Infineon Technologies G 8726 Munich, Germany 2 Infineon Technologies G ll Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.6 Page
BSS670S2L. OptiMOS Buck converter series. Product Summary. Feature V DS 55 V. R DS(on) 650 mω. Enhancement mode I D 0.54 A. Logic Level.
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Speed TEMPFET NChannel Enhancement mode Logic Level Input nalog driving possible Fast switching up to 1 MHz 1 5 PGTO26352 1 5 PGTO22512 Potentialfree temperature sensor with thyristor characteristics Overtemperature
More informationMaximum Ratings, att j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. IDpulse 88 E AS 90.
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Type OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target applications
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More informationFinal data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
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