SPP20N60S5. Cool MOS Power Transistor V DS 600 V

Transcription

1 SPPN6S Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance R DS(on).9 Ω I D A PG-TO P-TO-3-3 Type Package Ordering Code SPPN6S PG-TO Q674-S47 Marking N6S Maximum Ratings Parameter Symbol Value Unit Continuous drain current I D A T C = C T C = C 3 Pulsed drain current, t p limited by T jmax I D puls 4 Avalanche energy, single pulse I D = A, V DD = V E AS 69 mj Avalanche energy, repetitive t AR limited by T ) jmax E AR I D = A, V DD = V Avalanche current, repetitive t AR limited by T jmax I AR A Gate source voltage V GS ± V Gate source voltage AC (f >Hz) V GS ±3 Power dissipation, T C = C P tot 8 W Operating and storage temperature T j, T stg C Rev..8 Page 9--

2 SPPN6S Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt V/ns V DS = 48 V, I D = A, T j = C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case R thjc K/W SMD version, device on PCB: R min. 6 cm cooling area ) Soldering temperature, wavesoldering.6 mm (.63 in.) from case for s T sold C Electrical Characteristics, at Tj= C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V (BR)DSS V GS =V, I D =.ma V Drain-Source avalanche V (BR)DS V GS =V, I D =A breakdown voltage Gate threshold voltage V GS(th) I D =µα, V GS =V DS Zero gate voltage drain current I DSS V DS =6V, V GS =V, µa T j = C, T j = C Gate-source leakage current I GSS V GS =V, V DS =V - - na Drain-source on-state resistance R DS(on) V GS =V, I D =3A, Ω T j = C T j = C Gate input resistance R G f=mhz, open Drain - - Rev..8 Page 9--

3 SPPN6S Electrical Characteristics, at T j = C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance g fs V DS *I D *R DS(on)max, - - S I D =3A Input capacitance C iss V GS =V, V DS =V, pf Output capacitance C oss f=mhz Reverse transfer capacitance C rss Effective output capacitance, 3) energy related Effective output capacitance, 4) time related C o(er) V GS =V, V DS =V to 48V pf C o(tr) Turn-on delay time t d(on) V DD =3V, V GS =/V, - - ns Rise time t r I D =A, R G =.7Ω - - Turn-off delay time t d(off) - 4 Fall time t f Gate Charge Characteristics Gate to source charge Q gs V DD =3V, I D =A - - nc Gate to drain charge Q gd Gate charge total Q g V DD =3V, I D =A, V GS = to V Gate plateau voltage V (plateau) V DD =3V, I D =A V Repetitve avalanche causes additional power losses that can be calculated as PAV =E AR *f. Device on 4mm*4mm*.mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. 3 Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. 4 Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from to 8% V DSS. Rev..8 Page 3 9--

4 SPPN6S Electrical Characteristics, at T j = C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous I S T C = C - - A forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage V SD V GS =V, I F =I S -. V Reverse recovery time t rr V R =3V, I F =I S, ns Reverse recovery charge Q rr di F /dt=a/µs - - µc Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Thermal capacitance R th.769 K/W C th.3763 Ws/K R th. C th.4 R th3.9 C th3.93 R th4.4 C th4.97 R th.36 C th. R th6.9 C th6.9 P tot (t) T j R th R th,n Tcase External Heatsink C th C th C th,n T amb Rev..8 Page 4 9--

5 SPPN6S Power dissipation P tot = f (T C ) 4 SPPN6S W Safe operating area I D = f ( V DS ) parameter : D =, T C = C A Ptot ID - tp =. ms tp =. ms tp =. ms tp = ms DC C 6 3 Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T ZthJC K/W T C D =. D =. D =. D =. D =. D =. single pulse s t p - V 3 V DS 4 Typ. output characteristic I D = f (V DS ); T j = C parameter: t p = µs, V GS ID A V V V V V V 3 V DS 9V 8V 7V Rev..8 Page 9--

6 SPPN6S Typ. output characteristic I D = f (V DS ); T j = C parameter: t p = µs, V GS 6 Typ. drain-source on resistance R DS(on) =f(i D ) parameter: T j = C, V GS ID 3 A V V V 9V 8.V 8V RDS(on). mω V 6.V 7V 7.V 8V 8.V 9V V V V 7.V 7V V 6V..4 V 7 Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D = 3 A, V GS = V. SPPN6S Ω V DS.3 3 A 4 I D 8 Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs A 7 RDS(on) ID 6 4 C C % typ -6-6 C 8 T j Rev..8 Page 6 V V GS 9--

7 SPPN6S 9 Typ. gate charge V GS = f (Q Gate ) parameter: I D = A pulsed 6 SPPN6S Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs SPPN6S V. V DS max.8 V DS max A VGS IF T j = C typ T j = C typ T j = C (98%) T j = C (98%) nc Q Gate Avalanche SOA I AR = f (t AR ) par.: T j C V 3 V SD Avalanche energy E AS = f (T j ) par.: I D = A, V DD = V 7 mj A 6 IAR EAS T j (START)= C 3 T j (START)= C µs 4 t AR C 6 T j Rev..8 Page 7 9--

8 SPPN6S 3 Drain-source breakdown voltage V (BR)DSS = f (T j ) 7 SPPN6S 4 Avalanche power losses P AR = f (f ) parameter: E AR =mj V W V(BR)DSS PAR C 8 T j 4 Hz 6 f Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz pf 6 Typ. C oss stored energy E oss =f(v DS ) µj 4 C 4 3 C iss Eoss C oss 6 C rss V 6 V DS Rev..8 Page V 6 V DS 9--

9 SPPN6S Definition of diodes switching characteristics Rev..8 Page 9 9--

10 SPPN6S PG-TO-3-, PG-TO-3- Rev..8 Page 9--

11 SPPN6S Published by Infineon Technologies AG 876 Munich, Germany 7 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev..8 Page 9--