SPD30N08S2-22 OptiMOS Power-Transistor

Transcription

1 SPD3N8S222 OptiMOS PowerTransistor Feature NChannel Enhancement mode 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 75 V R DS(on) 21.5 mω 3 P TO Type Package Ordering Code SPD3N8S222 P TO Q676S7413 Marking 2N822 Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current1) T C =25 C 3 3 Pulsed drain current puls 12 T C =25 C valanche energy, single pulse E S 24 mj =3, V DD =25V, R GS =25Ω Repetitive avalanche energy, limited by T jmax 2) E R 14 Reverse diode dv/dt dv/dt 6 kv/µs I S =3, V DS =6, di/dt=2/µs, T jmax =175 C Gate source voltage V GS ±2 V Power dissipation P tot 136 W T C =25 C Operating and storage temperature T j, T stg C IEC climatic category; DIN IEC /175/56 Page

2 SPD3N8S222 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction case R thjc K/W Thermal resistance, junction ambient, leaded R thj 1 SMD version, device on PCB: R min. 6 cm 2 cooling area 3) 75 5 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drainsource breakdown voltage V GS =V, =1m V (BR)DSS 75 V Gate threshold voltage, V GS = V DS V GS(th) =8µ Zero gate voltage drain current SS µ V DS =75V, V GS =V, T j =25 C.1 1 V DS =75V, V GS =V, T j =125 C 1 1 Gatesource leakage current I GSS 1 1 n V GS =2V, V DS =V Drainsource onstate resistance R DS(on) mω V GS =1V, =25 1Current limited by bondwire ; with an R thjc = 1.1K/W the chip is able to carry = 52 at 25 C, for detailed information see app.note NPS71E available at 2Defined by design. Not subject to production test. 3Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Page

3 SPD3N8S222 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS 2* *R DS(on)max, S =3 Input capacitance C iss V GS =V, V DS =25V, pf Output capacitance C oss f=1mhz Reverse transfer capacitance C rss Turnon delay time t d(on) V DD =4V, V GS =1V, 1 15 ns Rise time t r =3, Turnoff delay time t d(off) R G =7.5Ω Fall time t f Gate Charge Characteristics Gate to source charge Q gs V DD =6V, = nc Gate to drain charge Q gd Gate charge total Q g V DD =6V, =3, V GS = to 1V Gate plateau voltage V (plateau) V DD =6V, =3 5.3 V Reverse Diode Inverse diode continuous I S T C =25 C 3 forward current Inv. diode direct current, pulsed I SM 12 Inverse diode forward voltage V SD V GS =V, I F = V Reverse recovery time t rr V R =4V, I F =l S, ns Reverse recovery charge Q rr di F /dt=1/µs nc Page

4 SPD3N8S222 1 Power dissipation P tot = f (T C ) parameter: V GS 6 V 15 SPD3N8S222 W 2 Drain current = f (T C ) parameter: V GS 1 V 32 SPD3N8S P tot 1 9 ID C 19 T C C 19 T C 3 Safe operating area = f ( V DS ) parameter : D =, T C = 25 C 1 3 SPD3N8S222 4 Max. transient thermal impedance Z thjc = f (t p ) parameter : D = tp/t 1 1 SPD3N8S222 K/W 1 t p = 1.µs ID R DS(on) = V DS / 1 µs ZthJC D = ms single pulse.1 1 V V DS Page s 1 t p 2359

5 SPD3N8S222 5 Typ. output characteristic = f (V DS ); T j =25 C parameter: t p = 8 µs 75 SPD3N8S222 Ptot = 136W 6 Typ. drainsource on resistance R DS(on) = f ( ) parameter: V GS 7 SPD3N8S222 mω d e f g h i b a V GS [V] a 4.5 b V 5.5 V DS e c d c 5. d 5.3 h f e 5.5 f 5.8 g g 6. h 6.3 i 1. R DS(on) V GS [V] = d e f 5.8 g 6. h 6.3 i i 7 Typ. transfer characteristics = f ( V GS ); V DS 2 x x R DS(on)max parameter: t p = 8 µs Typ. forward transconductance g fs = f( ); T j =25 C parameter: g fs 4 S gfs V 7 V GS Page

6 SPD3N8S222 9 Drainsource onstate resistance R DS(on) = f (T j ) parameter : = 25, V GS = 1 V 85 SPD3N8S222 mω 1 Typ. gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS 4 V R DS(on) V GS(th) µ 4 µ % typ C 2 T j 11 Typ. capacitances C = f (V DS ) parameter: V GS =V, f=1 MHz C 18 T j 12 Forward character. of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs 1 3 SPD3N8S222 pf C C iss IF C oss C rss 1 1 T j = 25 C typ T j = 175 C typ T j = 25 C (98%) T j = 175 C (98%) V 3 V DS Page V 3 V SD 2359

7 SPD3N8S Typ. avalanche energy E S = f (T j ) par.: ID = 3, V DD = 25 V, R GS = 25 Ω 24 mj 14 Typ. gate charge V GS = f (Q Gate) parameter: ID = 3 pulsed 16 SPD3N8S222 V E S VGS 1,2 V DS max,8 V DS max C 185 T j nc 65 Q Gate 15 Drainsource breakdown voltage V (BR)DSS = f (T j ) parameter: ID=1 m 92 SPD3N8S222 V 88 V(BR)DSS C 2 T j Page

8 SPD3N8S222 Published by Infineon Technologies G, Bereichs Kommunikation St.MartinStrasse 53, D81541 München Infineon Technologies G 1999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPD3N8S222, for simplicity the device is referred to by the term SPD3N8S222 throughout this documentation. Page