SPP03N60S5 SPB03N60S5

Transcription

1 Cool MOS Power Transistor New revolutionary high voltage technology Ultra low gate charge Periodic avalanche proved Extreme dv/dt rated Optimized capacitances Improved noise immunity Former development designation: SPPx4N6S5/SPBx4N6S5 D,2 G, S,3 CO LMOS Power Semiconductors Type V DS I D R DS(on) Package Marking Ordering Code 6 V Ω P-TO22-3- P-TO Maximum Ratings, at T j = 25 C, unless otherwise specified 3N6S5 3N6S5 Q674-S484 Q674-S497 Parameter Symbol Value Unit Continuous drain current I D T C = 25 C T C = C Pulsed drain current, t p = ms ) I D puls 5.7 T C = 25 C valanche energy, single pulse E S mj I D = 3.2, V DD = 5 V, R GS = 25 Ω Periodic avalanche energy E R only limited by T jmax Reverse diode dv/dt I S = 3.2, V DS <V DSS, di/dt = /µs, dv/dt 6 kv/µs T jmax = 5 C Gate source voltage V GS ±2 V Power dissipation T C = 25 C P tot 38 C Operating and storage temperature T j, T stg C Semiconductor Group

2 Electrical Characteristics Parameter Symbol Values Unit at T j = 25 C, unless otherwise specified min. typ. max. Thermal Characteristics Thermal resistance, junction - case R thjc K/W Thermal resistance, junction - ambient (Leaded and through-hole packages) R thj SMD version, device on min. 6 cm 2 cooling area 2) R thj Static Characteristics Drain- source breakdown voltage V GS = V, I D =.25 m Gate threshold voltage, V GS = V DS I D = 35 µ, T j = 25 C Zero gate voltage drain current, V DS =V DSS V GS = V, T j = 25 C V GS = V, T j = 5 C Gate-source leakage current V GS = 2 V, V DS = V Drain-Source on-state resistance V GS = V, I D = 2 V (BR)DSS V V GS(th) I DSS µ I GSS - - n R DS(on) Ω current limited by Tjmax 2 Device on 5mm*5mm*.5mm epoxy PCB FR4 with 6 cm2 (one layer, 7µm thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2

3 Electrical Characteristics Parameter Symbol Values Unit at T j = 25 C, unless otherwise specified min. typ. max. Characteristics Transconductance g fs S V DS 2*I D *R DS(on)max, I D = 2 Input capacitance C iss - 44 pf V GS = V, V DS = 25 V, f = MHz Output capacitance C oss - 23 V GS = V, V DS = 25 V, f = MHz Reverse transfer capacitance C rss - 2 V GS = V, V DS = 25 V, f = MHz Turn-on delay time t d(on) - 4 ns V DD = 35 V, V GS = V, I D = 3.2, R G = 2 Ω Rise time t r V DD = 35 V, V GS = V, I D = 3.2, R G = 2 Ω Turn-off delay time t d(off) - 6 V DD = 35 V, V GS = V, I D = 3.2, R G = 2 Ω Fall time V DD = 35 V, V GS = V, I D = 3.2, R G = 2 Ω t f Semiconductor Group 3

4 Electrical Characteristics Parameter Symbol Values Unit at T j = 25 C, unless otherwise specified min. typ. max. Gate Charge Characteristics Gate-source charge Q gs nc I D = 3.2, V DD = 35 V Gate-drain charge Q gd I D = 3.2, V DD = 35 V Total gate charge V DD = 35 V, I D = 3.2, V GS = to V Q g Reverse Diode Inverse diode continuous forward current T C = 25 C Inverse diode direct current,pulsed T C = 25 C Inverse diode forward voltage V GS = V, I F = 3.2 Reverse recovery time V R = 35 V, I F =I S, di F /dt = /µs Reverse recovery charge V R = 35 V, I F =l S, di F /dt = /µs I S I SM V SD -.2 V t rr - - ns Q rr µc Semiconductor Group 4

5 Power Dissipation P tot = f (T C ) 4 W Preliminary data Drain current I D = f (T C ) parameter: V GS V Ptot 24 ID C C 6 5 T j Safe operating area I D =f (T C ) parameter: D=., T C =25 C t p = 6.µs Transient thermal impedance Z thjc = f(t P ) Parameter: D=t P /T ID R DS(on) = V DS / I D µs ZthJC K/W - DC ms ms - D=.5 D=.2 D=. D=.5 D=.2 D=. single pulse -2 2 V 3 V DS s t p Semiconductor Group 5

6 Typ. output characteristic I D = f(v DS ); T j =25 C Parameter: V GS V 3V V Preliminary data Drain-source on-resistance R DS(on) = f (T j ) parameter : I D = 2, V GS = V 5.5 Ω 4.5 ID V RDS(on) % typ 2.. 7V V 26 V DS Typ. transfer characteristics I D = f ( V GS ) parameter: t p = 8 µs V DS 2 x I D x R DS(on)max C 8 T j Typ. capacitances C = f(v DS ) Parameter: V GS = V, f= MHz 4 pf Ciss ID 6 C 2 5 Coss 4 3 Crss V 2 V GS V V DS Semiconductor Group 6

7 Gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS, I D = 35 µ 7 Preliminary data valanche Energy E S = f (T j ) parameter: I D = 3.2, V DD = 5 V R GS = 25 Ω 2 V mj VGS(th) % ES 8 typ % C 8 T j Forward characteristics of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs C 6 T j Drain-source break down voltage V (BR)DSS =f (T j ) 7 V 66 IF V(BR)DSS T j = 25 C typ T j = 5 C typ T j = 25 C (98%) T j = 5 C (98%) V 3. V SD C 8 T j Semiconductor Group 7

8 Typ. gate charge V GS = f (Q Gate ) parameter: I Dpuls = Preliminary data V 2,2 V DS max,8 V DS max VGS nc 2 Q g Semiconductor Group 8

9 P-TO22-3- dimensions [mm] symbol min max B C D E F G H K L M 2.54 typ. N P.7.4 T Semiconductor Group 9

10 P-TO22-3 SMD dimensions [mm] symbol min max B.7.3 C..6 D.3.7 E F typ..85 G H typ. 4.5 K.7.37 L M N P. 5 typ..2 Q R S max 3. T.4.6 U V W X Y Z Semiconductor Group

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