P100 SERIES 25A PASSIVATED ASSEMBLED CIRCUIT ELEMENTS. Features. Description. Major Ratings and Characteristics. Bulletin I27125 rev.
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1 P0 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability Electrically isolated base plate 25A Available up to 200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved Description The P0 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simplified giving advantages of cost reduction and reduced size. Applications include power supplies, control circuits and battery chargers. Major Ratings and Characteristics Parameters P0 Units I D 25 T C 85 C I 50Hz Hz 375 A I 2 50Hz 637 A2 60Hz 580 A 2 s I 2 t 6365 A 2 s V RRM 400 to 200 V V INS 2500 V T J - 40 to 25 C
2 ELECTRICAL SPECIFICATIONS Voltage Ratings V RRM maximum repetitive V RSM maximum non- V DRM maximum I RRM max. Type number peak reverse voltage repetitive peak reverse repetitive peak T J max. voltage voltage V V V ma P, P2, P P2, P22, P P3, P23, P P4, P24, P P5, P25, P On-state Conduction Parameter P0 Units Conditions I D Maximum DC output current 25 T C = 85 C, full bridge I TSM Max. peak one-cycle 357 t = ms No voltage I FSM non-repetitive on-state 375 A t = 8.3ms reapplied or forward current 300 t = ms 0% V RRM 35 t = 8.3ms reapplied Sinusoidal half wave, I 2 t Maximum I 2 t for fusing 637 t = ms No voltage Initial T J = T J max. 580 A 2 s t = 8.3ms reapplied 450 t = ms 0% V RRM 4 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing 6365 A 2 s t = 0. to ms, no voltage reapplied I 2 t for time tx = I 2 t. tx V T(TO) Max. value of threshold voltage 0.82 V T J = 25 C r t V TM V FM Max. level value of on-state slope resistance Max. peak on-state or forward voltage drop 2 mω T J = 25 C, Av. power = V T(TO) * I T(AV) + r t + (I T(RMS) ) 2.35 V T J = 25 C, I TM = π x I T(AV) di/dt Maximum non repetitive rate of T J = 25 C from 0.67 V 200 A/µs DRM rise of turned on current I TM = π x I T(AV), I g = 500mA, tr < 0.5µs, tp > 6µs I H Maximum holding current 30 ma T J = 25 C anode supply = 6V, resistive load, gate open I L Maximum latching current 250 ma T J = 25 C anode supply = 6V, resistive load 2
3 Blocking Parameter P0 Units Conditions dv/dt I RRM I DRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current at V RRM, V DRM 200 V/µs T J = 25 C, exponential to 0.67 V DRM gate open ma T J = 25 C, gate open circuit I RRM Max peak reverse leakage current 0 µa T J = 25 C V INS RMS isolation voltage 2500 V 50Hz, circuit to base, all terminal shorted, T J = 25 C, t = s Triggering Parameter P0 Units Conditions P GM Maximum peak gate power 8 P G(AV) Maximum average gate power 2 W I GM Maximum peak gate current 2 A - V GM Maximum peak negative gate voltage V GT Maximum gate voltage required 3 V T J = - 40 C to trigger 2 T J = 25 C Anode Supply = 6V resistive load T J = 25 C I GD Maximum gate current 90 T J = - 40 C required to trigger 60 ma T J = 25 C Anode Supply = 6V resistive load 35 T J = 25 C V GD I GD Maximum gate voltage that will not trigger Maximum gate current that will not trigger 0.2 V T J = 25 C, rated V DRM applied 2 ma T J = 25 C, rated V DRM applied Thermal and Mechanical Specification Parameter P0 Units Conditions T J Max. operating temperature range -40 to 25 T stg Max. storage temperature range -40 to 25 C R thjc Max. thermal resistance, 2.24 K/W DC operation per junction junction to case R thcs Max. thermal resistance, 0. K/W Mounting surface, smooth and greased case to heatsink T Mounting torque, base to heatsink 4 Nm A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound wt Approximate weight 58 (2.0) g (oz) 3
4 23.2 (0.9) 5.2 (0.20) 5.5 (0.6) MAX. 25 (0.98) MAX. 4.6 (0.8) 4.6 (0.8) Circuit Type and Coding * Circuit "0" Circuit "2" Circuit "3" AC AC2 G AC2 AC G G2 G3 AC AC2 G G2 G4 G2 (-) (+) (-) (+) (-) (+) * To complete code refer to voltage ratings table, i.e.: for 600V P.W complete code is P2W Outline Table 2.7 (0.50) 2.7 (0.50).65 (0.06) 2.5 (0.) MAX (2.50) 45 (.77) Faston 6.35x0.8 (0.25x0.03) 32.5 (.28) MAX (.33) 48.7 (.9) All dimensions in millimeters (inches) 4
5 60 Maximum Total Power Loss (W) (Sine) T = 25 C J 2 K/W 3 K/W 5 K/W 7 K/W K/W R thsa =.5 K/W - Delta R Total Output Current (A) Maximum Allowable Ambient Temperature ( C) Fig. - Current Ratings Nomogram ( Module Per Heatsink) Maximum Average On-state Power Loss (W) RMS Limit Conduction angle T J = 25 C Maximum Average On-state Power Loss (W) 20 5 DC RMS Limit Conduction Period 5 T J= 25 C Average On-state Current (A) Average On-state Current (A) Fig. 2 - On-state Power Loss Characteristics Fig. 3 - On-state Power Loss Characteristics Maximum Allowable Case Temperature ( C) Fully Turned.on Per Module Total Output Current (A) (Sine) (Rect) Fig. 4 - Current Ratings Characteristics Instantaneous On-state Current (A) 00 0 T J = 25 C T J = 25 C Instantaneous On-state Voltage (V) Fig. 5 - On-state Voltage Drop Characteristics 5
6 Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= Hz Hz 0.00 s 50 0 Peak Half Sine Wave On-state Current (A) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 25 C No Voltage Reapplied Rated V RRM Reapplied Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Maximum Non-Repetitive Surge Current Transient Thermal Impedance Z (K/W) thjc 0. Steady State Value: R thjc = 2.24K/W (DC Operation) Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristics Instantaneous Gate Voltage (V) 0 Rectangular gate pulse a)recommended load line for rated di/dt : V, 20 ohms, tr <= µs b)recommended load line for rated di/dt : V, 65 ohms, tr <= µs TJ = 25 C (b) TJ = 25 C (a) TJ = -40 C VGD Frequency Limited IGD By PG(AV) Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics () PGM = 0 W, tp = 500 µs (2) PGM = 50 W, tp = ms (3) PGM = 20 W, tp = 25 ms (4) PGM = W, tp = 5 ms (4) (3) (2) () 6
7 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California U.S.A. Tel: (3) Fax: (3) EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: Fax: IR CANADA: 5 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) Fax: (905) IR GERMANY: Saalburgstrasse 57, 6350 Bad Homburg. Tel: Fax: IR ITALY: Via Liguria 49, 07 Borgaro, Torino. Tel: Fax: IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 7. Tel: IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower,3-, Singapore Tel: IR TAIWAN: 6 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 673, Taiwan. Tel: Fax-On-Demand: Data and specifications subject to change without notice. 7
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