Sensitive SCRs. ( Amps) Features. Electrically Isolated Packages. Glass Passivation

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1 Selected Packages* U.L. RECOGNIZED File #E71639 TO - 92 THERMOTAB TO-2AB TO-2AB A K G Sensitive SCRs (.8 1 ) 5 General Description The Teccor Electronics, Inc. line of sensitive SCR semiconductors are half-wave unidirectional gate-controlled rectifiers (SCRthyristor) which complement Teccor's line of power SCRs. This group of packages offers ratings of.8-1 amps, and - volts with gate sensitivities of 12- microamps. If gate currents in the 1- milliamp ranges are required, please consult Teccor's non-sensitive SCR technical data sheets. Tape-and-reel packaging is available for the TO-92 package. Please consult factory for more information. Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more information. Electrically Isolated Packages This group of Teccor sensitive SCRs is available in a choice of three different product packages. The TO-2AB and TO-92 are electrically isolated where the case or tab is internally isolated to allow the use of low cost assembly and convenient packaging techniques. Glass Passivation Teccor's line of SCRs features glass-passivated junctions to ensure long term device reliability and parameter stability. Teccor's glass offers a rugged, reliable barrier against junction contamination. Features Electrically-isolated To-2AB package High Capability up to Volts High Surge Capability up to Glass Chip Passivation Teccor Electronics, Inc. 5-1 Sensitive SCRs

2 Electrical Specifications Part Number I T V DRM & V RRM I GT I DRM & I RRM V TM V GT I H TYPE.8 Amp 1.5 AMPS Maximum On-state Repetitive DC Gate Trigger Off-state at On-state DC Gate Trigger DC Holding Off-state V DRM & V RRM Initial (4) (11) (1) Forward & (2) (11) (17) (19) T C = 25 C On-state Reverse (3) (1) =m K A (5) (14) (18) G TO-92 µ Volts See Package Dimensions section for RMS AV Volts µ T C = 25 C T C = C T C = 125 C Volts T C = - 65 C T C = 25 C T C = C m variations. MAX MIN MAX MAX MAX MAX MIN MAX EC13A EC13B EC13C EC13D EC13E EC13M EC13A EC13B EC13C EC13D EC13E EC13M EC13A EC13B EC13C EC13D EC13E EC13M EC13A EC13B EC13C EC13D EC13E EC13M EC113A EC113B EC113C EC113D EC113E EC113M EC113A EC113B EC113C EC113D EC113E EC113M N N N N N N N TCR TCR TCR TCR TCR See General Notes and Electrical Specifications Notes on page 5-4. Sensitive SCRs 5-2 Teccor Electronics, Inc.

3 Sensitive SCRs I GM V GRM P GM P G(AV) I TSM dv/dt di/dt t gt t q l 2 t Gate (16) Reverse Gate Gate Power Dissipation (16) Average Gate Power Dissipation One Cycle Surge Forward (6) (7) (12) Critical Rate- Of-Rise Of Forward Off-State Maximum Rate-Of- Change Of I GT = ma With.1µs Rise Time Gate Controlled Turn-On Time Gate Pulse = 1mA Min. Width = 15µs With Rise Time.1 µs (8) Circuit Commutated Turn-Off Time (9) RMS Surge (Non-Repetitive) For A Period Of 8.3ms For Fusing Volts Watts Watts Hz Hz Volts/µSec /µsec µsec µsec 2 /Sec MIN MIN TYP MAX See General Notes and Electrical Specifications Notes on page 5-4. Teccor Electronics, Inc. 5-3 Sensitive SCRs

4 Electrical Specifications Part Number Non-Isolated I T V DRM & I DRM & V RRM I GT I RRM V TM V GT I H I GM TYPE A Maximum (1) Repetitive Off-State Forward & Reverse DC Gate Trigger (2) (11) (13) Off-State at V DRM & V RRM (19) T C = 25 C (3) (1) DC Gate Trigger (4) (11) DC Holding Initial = ma (5) (15) (18) Gate (16) 4. K A G TO-2AB µ See Package T C = T C = T C = T C = T C = Dimensions I section for T(RMS) I T(AV) Volts µ 25 C 11 C Volts - C 25 C 11 C T C = 25 C variations. MAX MAX MIN MAX MAX MAX MAX MAX MAX MIN MAX T16F T16A T16B T16C T16D T16E T16M T17F T17A T17B T17C T17D T17E T17M Volts m General Notes Teccor 2N and 2N6564 Series devices conform to all JEDEC registered data. See specifications table on page 5-2. The case temperature (TC) is measured as shown on dimensional outline drawings. See Package Dimensions section of this catalog. All measurements (except I GT ) are made with an external resistor R GK = 1kΩ unless otherwise noted. All measurements are made at Hz with a resistive load at an ambient temperature of +25 o C unless otherwise specified. Operating temperature (T J ) is -65 o C to + 11 o C for EC Series devices; -65 o C to +125 o C for 2N Series devices; - o C to +125 o C for TCR Series; and - o C to +11 o C for all others. Storage temperature range (T S ) is -65 o C to + 1 o C for TO-92 devices; - o C to +1 o C for TO-2 devices; and - o C to +125 o C for all others. Lead solder temperature is a maximum of +23 o C for 1 seconds maximum 1/16" (1.59mm) from case. Electrical Specification Notes (1) See Figures 5.1 through 5.9 for current ratings at specified operating case temperatures. (2) See Figure 5.1 for I GT vs T C. (3) See Figure 5.11 for instantaneous on-state current (i T ) vs on-state voltage (v T ) - (typical). (4) See Figure 5.12 for V GT vs T C. (5) See Figure 5.13 for I H vs T C. (6) For more than one full cycle, see Figure (7).8-4.A devices also have a pulse peak forward current on-state rating (repetitive) of 75A. This rating applies for operation at Hz, 75 C maximum tab (or anode) lead temperature, switching from V peak, sinusoidal current pulse width of 1µs minimum, 15µs maximum. See Figures 5. and (8) See Figure 5.15 for t gt vs I GT. (9) Test conditions as follows: T C C, rectangular current waveform; rate-of-rise of current 1A/µs. Rate-of-reversal of current 5A/µs. I TM = 1A (µs pulse) Repetition Rate = pps. V RRM = Rated. V R = 15V minimum, V DRM = Rated. Rate-of-rise reapplied forward blocking voltage = 5V/µs. Gate Bias = V, Ω (during turn-off time interval). (1) Test condition is maximum rated RMS current except TO-92 devices are 1.2A PK ; T16/T17 devices are 4A PK. (11) V D = 6VDC, R L = Ω. See Figure 5.19 for simple test circuit for measuring gate trigger voltage and gate trigger current. (12) See Figures 5.1 through 5.9 for maximum allowable case temperature at maximum rated current. (13) I GT = µa maximum for T C = - C for T16 devices. (14) I H = 1mA maximum for T C = -65 C for 2N Series and 2N6564 Series devices. (15) I H = 6mA maximum for T C = - C for T16 devices. (16) Pulse Width 1µs. (17) I GT = 3µA maximum at T C = -65 C for 2N Series and 2N6564 Series devices. (18) Latching current can be higher than ma for higher I GT types. Also latching current can be much higher at - C. See Figure (19) T C = T J for test conditions in off-state. Sensitive SCRs 5-4 Teccor Electronics, Inc.

5 Sensitive SCRs V GRM P GM P G(AV) I TSM dv/dt di/dt t gt t q l 2 t Reverse Gate Gate Power Dissipation (16) Average Gate Power Dissipation One Cycle Surge Forward (6) (7) (12) Critical Rate- Of-Rise Of Forward Off-State Volts/µSec Maximum Rate-Of- Change Of I GT = ma with.1µs Rise Time Gate Controlled Turn-On Time Gate Pulse = 1mA Min. Width = 15µs with Rise Time.1 µs (8) Circuit Commutated Turn-Off Time (9) RMS Surge (Non-Repetitive) For A Period Of 8.3 msec for Fusing T C = 11 C Volts Watts Watts Hz Hz /µsec µsec µsec 2 Sec MIN TYP TYP MAX Teccor Electronics, Inc. 5-5 Sensitive SCRs

6 Electrical Specifications TYPE Part Number Isolated Non-Isolated K A G TO-2AB A K A G TO-2AB See Package Dimensions section for variations. I T Maximum (1) V DRM & I DRM & V RRM I GT I RRM V TM V GT I H Repetitive Off-State Forward & Reverse DC Gate Trigger (2) (11) Off-State at V DRM & V RRM (19) T C = 25 C (3) (1) DC Gate Trigger (4) (11) DC Holding Initial = ma (5) (18) I T(RMS) I T(AV) m Volts Volts µ 25 C 11 C Volts - C 25 C 11 C m T C = T C = T C = T C = T C = MAX MAX MIN MAX MAX MAX MAX MAX MAX MIN MAX S6LS2 S6FS S6LS3 S6FS S6LS2 S6FS S6LS3 S6FS S6LS2 S6FS S6LS3 S6FS S6LS2 S6FS S6LS3 S6FS S6LS2 S6FS S6LS3 S6FS S8LS2 S8FS S8LS3 S8FS S8LS2 S8FS S8LS3 S8FS S8LS2 S8FS S8LS3 S8FS S8LS2 S8FS S8LS3 S8FS S8LS2 S8FS S8LS3 S8FS S51LS2 S51FS S51LS3 S51FS S11LS2 S11FS S11LS3 S11FS S1LS2 S1FS S1LS3 S1FS S1LS2 S1FS S1LS3 S1FS S1LS2 S1FS S1LS3 S1FS General Notes Teccor 2N and 2N6564 Series devices conform to all JEDEC registered data. See specifications table on page 5-2. The case temperature (TC) is measured as shown on dimensional outline drawings. See Package Dimensions section of this catalog. All measurements (except I GT ) are made with an external resistor R GK = 1kΩ unless otherwise noted. All measurements are made at Hz with a resistive load at an ambient temperature of +25 o C unless otherwise specified. Operating temperature (T J ) is -65 o C to + 11 o C for EC Series devices; -65 o C to +125 o C for 2N Series devices; - o C to +125 o C for TCR Series; and - o C to +11 o C for all others. Storage temperature range (T S ) is -65 o C to + 1 o C for TO-92 devices; - o C to +1 o C for TO-2 devices; and - o C to +125 o C for all others. Lead solder temperature is a maximum of +23 o C for 1 seconds maximum 1/16" (1.59mm) from case. Sensitive SCRs 5-6 Teccor Electronics, Inc.

7 Sensitive SCRs I GM V GRM P GM P G(AV) I TSM dv/dt di/dt t gt t q l 2 t Gate (16) Reverse Gate Gate Power Dissipation (16) Average Gate Power Dissipation One Cycle Surge Forward (6) (12) Critical Rate- Of-Rise Of Forward Off-State Maximum Rate-Of-Change Of I GT = ma With.1 µs Rise Time Gate Controlled Turn-On Time Gate Pulse = 1mA Min. Width = 15µs With Rise Time.1 µs (8) Circuit Commutated Turn-Off Time (9) RMS Surge (Non-Repetitive) For A Period Of 8.3 msec For Fusing Volts/µSec Volts Watts Watts T C = 11 C / µsec µsec µsec 2 Sec MIN Hz Hz TYP TYP MAX Electrical Specification Notes (1) See Figures 5.1 through 5.9 for current ratings at specified operating case temperatures. (2) See Figure 5.1 for I GT vs T C. (3) See Figure 5.11 for instantaneous on-state current (i T ) vs on-state voltage (v T ) - (typical). (4) See Figure 5.12 for V GT vs T C. (5) See Figure 5.13 for I H vs T C. (6) For more than one full cycle, see Figure (7).8-4.A devices also have a pulse peak forward current on-state rating (repetitive) of 75A. This rating applies for operation at Hz, 75 C maximum tab (or anode) lead temperature, switching from V peak, sinusoidal current pulse width of 1µs minimum, 15µs maximum. See Figures 5. and (8) See Figure 5.15 for t gt vs I GT. (9) Test conditions as follows: T C C, rectangular current waveform; rate-of-rise of current 1A/µs. Rate-of-reversal of current 5A/µs. I TM = 1A (µs pulse) Repetition Rate = pps. V RRM = Rated. V R = 15V minimum, V DRM = Rated. Rate-of-rise reapplied forward blocking voltage= 5V/µs. Gate Bias = V, Ω (during turn-off time interval). (1) Test condition is maximum rated RMS current except TO-92 devices are 1.2A PK ; T16/T17 devices are 4A PK. (11) V D = 6VDC, R L = Ω. See Figure 5.19 for simple test circuit for measuring gate trigger voltage and gate trigger current. (12) See Figures 5.1 through 5.9 for maximum allowable case temperature at maximum rated current. (13) I GT = µa maximum for T C = - C for T16 devices. (14) I H = 1mA maximum for T C = -65 C for 2N Series and 2N6564 Series devices. (15) I H = 6mA maximum for T C = - C for T16 devices. (16) Pulse Width 1µs. (17) I GT = 3µA maximum at T C = -65 C for 2N Series and 2N6564 Series devices. (18) Latching current can be higher than ma for higher I GT types. Also latching current can be much higher at - C. See Figure (19) T C = T J for test conditions in off-state. Teccor Electronics, Inc. 5-7 Sensitive SCRs

8 Electrical Specifications THERMAL RESISTANCE (STEADY STATE) R θjc [R θ JA ] C/W (TYPICAL) Electrical Isolation E TO-92 THERMOTAB TYPE 2 TO- TYPE 1 & 3 TO-2AB 2AB TO-2AB.8 Amp 75 [1] 1.5 [1] 4. 1 [] 6.2 [] [65] Teccor s isolated sensitive SCRs will withstand a minimum high potential test of VAC RMS from leads to mounting tab over the device's operating temperature range. See table below for other standard and optional isolation ratings. ELECTRICAL ISOLATION FROM LEADS TO MOUNTING TAB VAC(RMS) *For V Isolation use V Suffix in part number **UL Recognized File #E71639 L THERMOTAB** TO-2AB Standard Optional* F2 F Figure 5.1 Maximum Allowable Case Temperature (T C ) - C Figure 5.2 Maximum Allowable Case Temperature (T C ) - C "EC" SERIES CONDUCTION ANGLE: 1 CASE TEMPERATURE: Measured as Shown on Dimensional Drawing JEDEC "2N" SERIES RMS [I T(RMS) ] - Maximum Allowable Case Temperature vs RMS (JEDEC 2N Series and EC Series) DEVICES T16 & T17 TYPE 2 & 4 CONDUCTION ANGLE: 1 CASE TEMPERATURE: Measured as Shown on Dimensional Drawing T16 & T17 TYPE 1 & RMS [I T(RMS) ] - Maximum Allowable Case Temperature vs RMS (T16 and T17) Maximum Allowable Case Temperature (T C ) - C JDEC "2N" SERIES "EC" SERIES CONDUCTION ANGLE: 1 CASE TEMPERATURE: Measured as Shown on Dimensional Drawing Average [I T(AV) ] - Figure 5.3 Maximum Allowable Case Temperature vs Average On- State (JEDEC 2N Series and EC Series) Sensitive SCRs 5-8 Teccor Electronics, Inc.

9 Sensitive SCRs Maximum Allowable Case Temperature (T C ) - C T16 & T17 TYPE 2 & DEVICES CONDUCTION ANGLE: 1 CASE TEMPERATURE: Measured as Shown on Dimensional Drawing T16 & T17 TYPE 1 & Average [I T(AV) ] - Maximum Allowable Ambient Temperature (T A ) - C 1 T16/T17 TO-2 TYPE 2 & 4 CONDUCTION ANGLE: 1 FREE AIR RATING T16/T17 TO-2 TYPE 1 & Average [I T(AV) ]- Figure 5.4 Maximum Allowable Case Temperature vs Average On- State (T16 and T17) Figure 5.7 Maximum Allowable Ambient Temperature vs Average On- State Maximum Allowable Ambient Temperature (T A ) - C 1 CONDUCTION ANGLE: 1 FREE AIR RATING 1.5 AMP DEVICES & JEDEC "2N" SERIES I T(RMS) 1.5 AMP & JEDEC "2N" SERIES I T(AV) & EC SERIES I T(AV) EC SERIES I T(RMS) Maximum Allowable Case Temperature (T C ) - C CONDUCTION ANGLE: 1 TEMPERATURE: Measured as Shown on Dimensional Drawings 6 AMP DEVICES 8 AMP DEVICES 1 AMP DEVICES RMS [I T(RMS) ] - Figure 5.5 Maximum Allowable Ambient Temperature vs (1.5 Amp, JEDEC 2N Series and EC Series) Figure 5.8 Maximum Allowable Case Temperature vs RMS Maximum Allowable Ambient Temperature (T A ) - C 1 T16/T17 TO-2 TYPE 1 & 3 T16/T17 TO-2 TYPE 2 & 4 CONDUCTION ANGLE: 1 FREE AIR RATING RMS [I T(RMS) ] - 2. Maximum Allowable Case Temperature (T C ) - C AMP DEVICES Average [I T(AV) ] - CONDUCTION ANGLE: 1 CASE TEMPERATURE: Measured as Shown on Dimensional Drawings 8 AMP DEVICES 1 AMP DEVICES 7 Figure 5.6 Maximum Allowable Ambient Temperature vs RMS On- State (T16 and T17) Figure 5.9 Maximum Allowable Case Temperature vs Average On- State Teccor Electronics, Inc. 5-9 Sensitive SCRs

10 Electrical Specifications I GT I GT (TC = 25 C) See General Notes for specific device operating temperature range. V GT V GT (T C = 25 C) See General Notes for specific operating temperature range Ratio of Ratio of Case Temperature (T C ) - C Case Temperature (T C ) - C Figure 5.1 Normalized DC Gate-Trigger vs Case Temperature Figure 5.12 Normalized DC Gate-Trigger vs Case Temperature Instantaneous (i T ) T C = 25 C AMP TO-92 AND T16/T17 DEVICES 6-1 AMP DEVICES I H I H (T C = 25 C) Ratio of See General Notes for specific operating temperature range Instantaneous (v T ) - Volts Case Temperature (T C ) - C Figure 5.11 Instantaneous vs (Typical) Figure 5.13 Normalized DC Holding vs Case Temperature Surge (Non-Repetitive) (I TSM ) NOTES 1 AMP DEVICES T16 & T17 1) GATE CONTROL MAY BE LOST DURING AND IMMEDIATELY FOLLOWING SURGE CURRENT INTERVAL. 2) OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION TEMPERATURE HAS RETURNED TO STEADY-STATE RATED VALUE. SUPPLY FREQUENCY: Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: [I T(RMS) ]: Max Rated Value at Specified Case Temperature 8 AMP DEVICES.8 AMP DEVICES 6 AMP DEVICES 1.5 AMP DEVICES Figure 5.14 Surge vs Surge Duration Surge Duration - full cycles Sensitive SCRs 5-1 Teccor Electronics, Inc.

11 Sensitive SCRs I GT = µa MAX 9. I GT = µa MAX T C = 25 C See General Notes for specific device operating temperature range. Turn-On Time (tgt) - µs 1 1. I GT = 12 µa MAX IGT = µa MAX I L I L (T C = 25 C) Ratio of Case Temperature (T C ) - C Figure 5.18 Normalized DC Latching vs Case Temperature Figure 5.15 DC Gate Trigger (I GT ) - ma Typical Turn-On Time vs Gate Trigger Reset Normally-closed Pushbutton Average Power Dissipation [P D(AV) ] - Watts CURRENT WAVEFORM: Half Sine Wave CONDUCTION ANGLE: 1 T16 & T17 DEVICES.8 AMP TO-92 DEVICES 1.5 AMP DEVICES + 6 VDC - Figure 5.19 V1 D.U.T. 1K (1%) I GT Simple Test Circuit For Gate Trigger and Measurement I G IN1 V GT R1 Figure 5.16 Average Power Dissipation [P D(AV) ] - Watts RMS [I T(RMS) ] - Power Dissipation (Typical) vs RMS CURRENT WAVEFORM: Half Sine Wave CONDUCTION ANGLE: AMP TO-2 & TO-2 DEVICES RMS [I T(RMS) ] - Note: V1-1 volt DC meter VGT -1 volt DC meter I G -1mA DC millimeter R1 1K potentiometer To measure gate trigger voltage and current, raise gate voltage (V GT ) until meter reading V1 drops from 6 volts to 1 volt. Gate trigger voltage is the reading on V GT just prior to V1 dropping. Gate trigger current I GT can be computed from the relationship: I = GT V GT I G where I G is reading (in amps) on meter just prior to V1 dropping. Note: I GT may turn out to be a negative quantity (trigger current flows out from gate lead). Figure 5.17 Power Dissipation (Typical) vs RMS Teccor Electronics, Inc Sensitive SCRs

12 Electrical Specifications 1 1 PEAK DISCHARGE CURRENT (I TM ) - AMPS 1 I TM 1.Hz 12Hz Hz.8-4.A DEVICES t W t W = 5 TIME CONSTANTS PEAK CURRENT DURATION(t W ) - µs Figure 5. Repetitive Capacitor Discharge 1 1 PEAK DISCHARGE CURRENT (I TM ) - AMPS 1 I TM t W 1.Hz 12Hz Hz.8-4.A DEVICES PEAK CURRENT DURATION(t W ) - µs Figure 5.21 Repetitive Sinusoidal Curve Sensitive SCRs 5-12 Teccor Electronics, Inc.