IXYS. Thyristor/Diode Modules MC#650. Date: 13 th Mar Data Sheet Issue: 1. Absolute Maximum Ratings V RRM V DRM [V] MAXIMUM LIMITS
|
|
- Noel Shaw
- 6 years ago
- Views:
Transcription
1 Date: 13 th Mar 13 Data Sheet Issue: 1 Absolute Maximum Ratings Thyristor/Diode Modules MC#65 V RRM V DRM [V] io7 65-4io7 65-4io7 65-4io7 VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage 1) 4 V V DSM Non-repetitive peak off-state voltage 1) 5 V V RRM Repetitive peak reverse voltage 1) 4 V V RSM Non-repetitive peak reverse voltage 1) 5 V UNITS OTHER RATINGS MAXIMUM LIMITS I T(AV)M Maximum average on-state current, T C = 85 C ) 646 A I T(AV)M Maximum average on-state current. T C = 1 C ) 444 A I T(RMS)M Nominal RMS on-state current, T C = 55 C ) 154 A I T(d.c.) D.C. on-state current, T C = 55 C 117 A I TSM Peak non-repetitive surge t p = 1 ms, V RM = 6%V RRM 3).1 ka I TSM Peak non-repetitive surge t p = 1 ms, V RM 1V 3) 4.5 ka UNITS I t I t capacity for fusing t p = 1 ms, V RM = 6%V RRM 3) ka s I t I t capacity for fusing t p = 1 ms, V RM 1 V 3) ka s (di/dt) cr Critical rate of rise of on-state current (repetitive) 4) A/µs Critical rate of rise of on-state current (non-repetitive) 4) 4 A/µs V RGM Peak reverse gate voltage 5 V P G(AV) Mean forward gate power 4 W P GM Peak forward gate power 4 W V ISOL Isolation Voltage 5) 3 V T vj op Operating temperature range C T stg Storage temperature range C Notes: 1) De-rating factor of.13% per C is applicable for T vj below 5 C. ) Single phase; 5 Hz, 18 half-sinewave. 3) Half-sinewave, 15 C T vj initial. 4) V D = 67% V DRM, I FG = A, t r.5µs, T C = 15 C. 5) AC RMS voltage, 5 Hz, 1min test Rating Report. Type Page 1 of 1 March 13
2 Thyristor/Diode Module Type Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS 1) UNITS V TM Maximum peak on-state voltage I TM = 65A, T vj = T vjmax V V TM Maximum peak on-state voltage I TM = 195A, T vj = T vjmax V V T Threshold voltage V r T Slope resistance mω (dv/dt) cr Critical rate of rise of off-state voltage V D =.67% V DRM, Gate o/c V/µs I DRM Peak off-state current Rated V DRM ma I RRM Peak reverse current Rated V RRM ma V GT Gate trigger voltage V T vj = 5 C, V D = 1 V, I T = 3 A I GT Gate trigger current ma V GD Gate non-trigger voltage % V DRM V I H Holding current V D = 1 V, T vj = 5 C ma t gd Gate controlled turn-on delay time I FG = A, t r =.5 µs, V D = 4%V DRM, µs t gt Turn-on time I TM = 8A, di/dt = 1 A/µs, T vj = 5 C µs Q rr Recovered Charge µc Q ra Recovered Charge, 5% chord I TM = 74A, di/dt = 1A/µs, µc I rm Reverse recovery current V R = 1 V A t rr Reverse recovery time, 5% chord µs t q Turn-off time R thjc R thch Thermal resistance, junction to case Thermal resistance, case to heatsink I TM = 8 A, di/dt = 1 A/µs, V R = 1 V, V DR = 67%V DRM, dv DR /dt = 5 V/µs Single Thyristor K/W Whole Module K/W Single Thyristor K/W Whole Module K/W F 1 Mounting force (to heatsink) - 9. Nm F Mounting force (to terminals) W t Weight kg Notes: 1) Unless otherwise indicated T vj =15 C. ) Screws must be lubricated. ) µs Nm Rating Report. Type Page of 1 March 13
3 Thyristor/Diode Module Type Notes on Ratings and Characteristics 1. Voltage Grade Table V Voltage Grade DRM V RRM V DSM V RSM V D V R V V DC V Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production. 3. De-rating Factor A blocking voltage de-rating factor of.13%/ C is applicable to this device for T vj below 5 C. 4. Repetitive dv/dt Standard dv/dt is 1V/µs. 5. Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6. Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 4A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 7. Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 3V is assumed. This gate drive must be applied when using the full di/dt capability of the device. I GM 4A/µs I G t p1 The magnitude of I GM should be between five and ten times I GT, which is shown on page. Its duration (t p1 ) should be µs or sufficient to allow the anode current to reach ten times I L, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The back-porch current I G should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times I GT. Rating Report. Type Page 3 of 1 March 13
4 Thyristor/Diode Module Type 8. Computer Modelling Parameters 8.1 Thyristor Dissipation Calculations I VT + VT + 4 AV = ff ff r T r T W AV and: W AV T = R T = T th j max T K Where V T =.874 V, r T =.7 mω. R th = Supplementary thermal impedance, see table below and ff = Form factor, see table below. Supplementary Thermal Impedance Conduction Angle d.c. Square wave Sine wave Form Factors Conduction Angle d.c. Square wave Sine wave Calculating thyristor V T using ABCD Coefficients The on-state characteristic I T vs. V T, on page 6 is represented by a set of constants A, B, C, D, forming the coefficients of the representative equation for V T in terms of I T given below: V T = A + B ln ( IT ) + C IT + D IT The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for V T agree with the true device characteristic over a current range, which is limited to that plotted. 5 C Coefficients 15 C Coefficients A 8.437E-1 A E-1 B E- B.9488E- C E-4 C E-4 D E-3 D E-3 Rating Report. Type Page 4 of 1 March 13
5 Thyristor/Diode Module Type 8.3 D.C. Thermal Impedance Calculation p = n rt = rp p= 1 Where p = 1 to n and: n = number of terms in the series t = Duration of heating pulse in seconds r t = Thermal resistance at time t r p = Amplitude of p th term τ p = Time Constant of r th term 1 e t τ p The coefficients for this device are shown in the table below: D.C. Term r p τ p Reverse recovery ratings (i) Q ra is based on 5% I RM chord as shown in Fig. 1 Fig. 1 (ii) Q rr is based on a 15 µs integration time i.e. (iii) K Factor = t t 1 Q rr = 15µ s i rr. dt Rating Report. Type Page 5 of 1 March 13
6 Thyristor/Diode Module Type Curves Figure 1 On-state characteristics of Limit device 1 T j = 5 C T j = 15 C Instantaneous On-state current - I TM (A) Instantaneous On-state voltage - V TM (V) Figure Gate characteristics Trigger limits 7 T j =5 C Figure 3 Gate characteristics Power curves 14 T j =5 C 6 1 Max V G dc Max V G dc 5 1 Gate Trigger Voltage - V GT (V) 4 3 I GT, V GT Gate Trigger Voltage - V GT (V) 8 6 P G Max 4W dc 4 15 C 5 C -4 C P G 4W dc 1 I GD, V GD Min V G dc Min V G dc Gate Trigger Current - I GT (A) Gate Trigger Current - I GT (A) Rating Report. Type Page 6 of 1 March 13
7 Thyristor/Diode Module Type Figure 4 Recovered charge, Q rr 1 T j =15 C Figure 5 Recovered charge, Q ra (5% Chord) 1 T j =15 C A 148A Recovered charge - Q rr (µc) 1 A 148A 74A Recovered charge - Q ra, 5% chord (µc) 74A di/dt (A/µs) di/dt (A/µs) Figure 6 Reverse recovery current, I rm 1 T j =15 C A 148A 74A Figure 7 Reverse recovery time, t rr 1 T j =15 C Reverse recovery current - I rm (A) 1 Reverse recovery time (5% chord) - t rr (µs) A 148A 74A di/dt (A/µs) di/dt (A/µs) Rating Report. Type Page 7 of 1 March 13
8 Thyristor/Diode Module Type Figure 8 On-state current vs. Power dissipation Sine wave 5 Figure 9 On-state current vs. case temperature Sine wave Maximum forward dissipation (W) 15 1 Maximum permissable case temperature ( C) Mean forward current (A) (Whole cycle averaged) Figure 1 On-state current vs. Power dissipation Square wave Mean forward current (A) (Whole cycle averaged) Figure 11 On-state current vs. case temperature Square wave 14 1 Maximum forward dissipation (W) 15 1 d.c Maximum permissible case temperature ( C) d.c Mean Forward Current (A) (Whole Cycle Averaged) Mean Forward Current (A) (Whole Cycle Averaged) Rating Report. Type Page 8 of 1 March 13
9 Thyristor/Diode Module Type Figure 1 Maximum surge and I t Ratings 1 Gate may temporarily lose control of conduction angle 1.E+8 I t: V RRM 1V Total peak half sine surge current (A) 1 1 I t: 6% V RRM I TSM : V RRM 1V I TSM : 6% V RRM 1.E+7 1.E+6 Maximum I t (A s) T j (initial) = 15 C Duration of surge (ms) Duration of surge 5Hz) 1.E+5 Figure 13 Transient thermal impedance 1.E-1 Single Thyristor 1.E- Thermal impedance (K/W) 1.E-3 1.E Time (s) Rating Report. Type Page 9 of 1 March 13
10 Thyristor/Diode Module Type Outline Drawing & Ordering Information 15A14 ORDERING INFORMATION (Please quote 11 digit code as below) M C# 65 io 7 Fixed Type Code Configuration code CC, CD or DC Fixed Type Code Typical order code: MCC65-4io7 MCC configuration, 4V V RRM Voltage code V RRM /1 4 i = Critical dv/dt 1 V/µs o = Typical turn-off time Fixed Version Code IXYS Semiconductor GmbH Edisonstraße 15 D-6863 Lampertheim Tel: Fax: marcom@ixys.de IXYS Corporation 159 Buckeye Drive Milpitas CA USA Tel: +1 (48) Fax: +1 (48) sales@ixys.net IXYS IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 () Fax: +44 () sales@ixysuk.com IXYS Long Beach, Inc 5 Mira Mar Ave, Long Beach CA 9815 Tel: +1 (56) Fax: +1 (56) service@ixyslongbeach.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH. In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice. IXYS Semiconductor GmbH. Rating Report. Type Page 1 of 1 March 13
IXYS. Thyristor/Diode Modules MC#500. Date: 13 th Mar Data Sheet Issue: 1. Absolute Maximum Ratings V RRM V DRM [V] MAXIMUM LIMITS
Date: 13 th Mar 13 Data Sheet Issue: 1 Absolute Maximum Ratings Thyristor/Diode Modules MC#5 V RRM V DRM [V] 3 5-3io7 5-3io7 5-3io7 5-3io7 36 5-36io7 5-36io7 5-36io7 5-36io7 VOLTAGE RATINGS MAXIMUM LIMITS
More informationPhase Control Thyristor Types N1075LN180
Date:- 3 th April, 15 Data Sheet Issue:- 3 Phase Control Thyristor Types Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 18 V V DSM Non-repetitive
More informationPhase Control Thyristor Types N0465WN140 and N0465WN160
Date:- 4 th June, 214 Data Sheet Issue:- 4 Phase Control Thyristor Types N465WN14 and N465WN16 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1)
More informationPhase Control Thyristor Types N2086NC060 to N2086NC100
Date:- August 1 Data Sheet Issue:- 3 Phase Control Thyristor Types N86NC6 to N86NC1 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 6-1 V V DSM
More informationPhase Control Thyristor Types N1467NC200 to N1467NC260
Date:- 31 st July 2012 Data Sheet Issue:- 3 Phase Control Thyristor Types N1467NC200 to N1467NC260 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note
More informationThyristor/Diode Modules M## 500 MCC MCD MDC MCA MCK MCDA MDCA
Date: 19.9.25 Data Sheet Issue: 3 Absolute Maximum Ratings Thyristor/Diode Modules M## 5 V RRM V DRM [V] MCC MCD MDC MCA MCK MCDA MDCA 2 5-2io1 5-2io1 5-2io1 5-2io1 5-2io1 5-2io1 5-2io1 22 5-22io1 5-22io1
More informationPhase Control Thyristor Types N3165HA260 and N3165HA280 Development Type No.: NX450HA260 and NX450HA280
Date:- 8 th December, 214 Data Sheet Issue:- A1 Phase Control Thyristor Types N3165HA26 and N3165HA28 Development Type No.: NX45HA26 and NX45HA28 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS
More informationPhase Control Thyristor Types N1588NC200 to N1588NC260
Date:- 2 August 212 Data Sheet Issue:- 2 Phase Control Thyristor Types N1588NC2 to N1588NC26 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 2-26
More informationThyristor/Diode Modules M## 700 MCC MCD MDC MCA MCK MCDA MDCA
Date: 27.1.25 Data Sheet Issue: 2 Absolute Maximum Ratings Thyristor/Diode Modules M## 7 V RRM V DRM [V] MCC MCD MDC MCA MCK MCDA MDCA 12 7-12io1W 7-12io1W 7-12io1W 7-12io1W 7-12io1W 7-12io1W 7-12io1W
More informationPhase Control Thyristor Types N4085ZC080 to N4085ZC120 Old Type No.: N1600CH02-12
Date:- 3 Jan, 23 Data Sheet Issue:- 1 Phase Control Thyristor Types N485ZC8 to N485ZC12 Old Type No.: N16CH2-12 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage,
More informationRectifier Diode Types W3270N#200 and W3270N#220 Old Type No.: SW20-22CXC14C
Date:- 23 October, 213 Data Sheet Issue:- 6 Rectifier Diode Types W327N#2 and W327N#22 Old Type No.: SW2-22CXC14C Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive peak reverse voltage,
More informationDual Diode Water Cooled Modules MD# 950
Date: 23.5.25 Data Sheet Issue: 2 Dual Diode Water Cooled Modules MD# 95 Absolute Maximum Ratings V RRM V DRM [V] MDD MDA MDK 12 95-12N1W 95-12N1W 95-12N1W 14 95-14N1W 95-14N1W 95-14N1W 16 95-16N1W 95-16N1W
More informationRectifier Diode Types W0507YH360 to W0507YH450 Previous Type No.: SW36-45HXC270
Date:- 6 th March, 214 Data Sheet Issue:- 3 Rectifier Diode Types W57YH36 to W57YH45 Previous Type No.: SW36-45HXC27 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive peak reverse
More informationPhase Control Thyristor Types N3533Z#140 to N3533Z#220 Old Type No.: N1400CH02-20
WESTCODE An IXYS Company Date:- 18 Sept 27 Data Sheet Issue:- 2 Phase Control Thyristor Types N3533Z#14 to N3533Z#22 Old Type No.: N14CH2-2 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM
More informationWESTCODE. Rectifier Diode Types W1856NC400 to W1856NC500 Old Type No: SW40-50CXC815. An IXYS Company. Date:- 21 Dec, Data Sheet Issue:- 1
WESTCODE An IXYS Company Date:- 21 Dec, 24 Data Sheet Issue:- 1 Rectifier Diode Types W1856NC4 to W1856NC5 Old Type No: SW4-5CXC815 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive
More informationWESTCODE. An IXYS Company. Date:- 16 Jun, Data Sheet Issue:- 1
WESTCODE An IXYS Company Date:- 16 Jun, 26 Data Sheet Issue:- 1 Provisional Data Rectifier Diode Type W428##25 to W428##32 Development Type No.: WX171##25-32 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM
More informationWESTCODE. Rectifier Diode Types W2820V#360 to W2820V#450 Old Type No.: SW36-45C/FXC1100. An IXYS Company. Date:- 9 Jul, Data Sheet Issue:- 1
WESTCODE An IXYS Company Date:- 9 Jul, 24 Data Sheet Issue:- 1 Rectifier Diode Types W282V#36 to W282V#45 Old Type No.: SW36-45C/FXC11 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive
More informationPhase Control Thyristor Type SKT552/16E
Date:- 4 Feb 22 Data Sheet Issue:- 3 Absolute Maximum Ratings Phase Control Thyristor Type VOLTAGE RATINGS Symbol Parameter MAXIMUM UNITS V DRM Repetitive peak off-state voltage, (note 1) 16 V V DSM Non-repetitive
More informationSymmetrical Gate Turn-Off Thyristor Types S0300SR12Y
Date: 21 Feb, 2014 Data Sheet Issue:- 2 Symmetrical Gate Turn-Off Thyristor Types bsolute Maximum Ratings MXIMUM VOLTGE RTINGS LIMITS UNITS V DRM Repetitive peak off-state voltage, (note 1) 1200 V V DSM
More informationWESTCODE. Rectifier Diode Types W1520N#500 to W1520N#600 Old Part No.: SW46-58CXC620. An IXYS Company. Date:- 5 Apr, Data Sheet Issue:- 2
WESTCODE An IXYS Company Date:- 5 Apr, 26 Data Sheet Issue:- 2 Rectifier Diode Types W152N#5 to W152N#6 Old Part No.: SW46-58CXC62 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive
More informationWESTCODE. An IXYS Company. Date:- 10 Oct, Data Sheet Issue:- 1
WESTCODE An IXYS Company Date:- 1 Oct, 26 Data Sheet Issue:- 1 Provisional Data Wespack Rectifier Diode Types W5334MK2-W5334MK22 Previous Type No.: W4987MK2-22 Absolute Maximum Ratings VOLTAGE RATINGS
More informationRectifier Diode Types W3708MC300 to W3708MC350
Date:- 18 th May 2017 Data Sheet Issue:- 2 Rectifier Diode Types W3708MC300 to W3708MC350 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VRRM Repetitive peak reverse voltage, (note 1) 3000-3500
More informationPhase Control Thyristor Types N2500VC120 to N2500VC160
WESTCODE Date:- 2 Nov, 21 Data Sheet Issue:- 1 Phase Control Thyristor Types N25VC12 to N25VC16 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VDRM Repetitive peak off-state voltage, (note 1)
More informationPhase Control Thyristor Types N1114LS120 to N1114LS180
WESTCODE Date:- 6 Feb, 1 Data Sheet Issue:- 1 Phase Control Thyristor Types N1114LS1 to N1114LS18 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VDRM Repetitive peak off-state voltage, (note 1)
More informationFast Symmetrical Gate Turn-Off Thyristor Type H0700KC14# to H0700KC17#
Date:- 28 September, 22 Data Sheet Issue:- 2 Fast Symmetrical Gate Turn-Off Thyristor Type H7KC4# to H7KC7# Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS LIMITS UNITS V DRM Repetitive peak off-state
More informationDouble Thyristor Module For Phase Control MT A2
Electrically isolated base plate Industrial standard package Simplified mechanical design, rapid assembly Pressure contact PROTON-ELECTROTEX RUSSIA Double Thyristor Module For Phase Control MT3-595-18-A2
More informationAdvanced Data Water Cooled Heatsink Type XW180GC34#
Advanced Data Water Cooled Heatsink Type Characteristics Double side cooling, 2 coolers + 1 Semiconductor Date: - 5 th November, 2009 Data Sheet Issue: - 2 PARAMETER TYP. TEST CONDITIONS UNITS R th (C/W)
More information5STP 18F1801 Old part no. T
5STP 18F181 Phase Control Thyristor Properties 5STP 18F181 Old part no. T 918-177-18 Key Parameters High operational capability V DRM, V RRM = 1 8 V Possibility of serial and parallel connection I TAVm
More informationST2600C..R SERIES 2630A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25199 rev. B 02/00 (R-PUK)
ST2600C..R SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Double side cooling High surge capability High mean current Fatigue free 2630A Typical Applications DC motor controls Controlled DC
More informationABB 5STP12F4200 Control Thyristor datasheet
ABB 5STP12F4200 Control Thyristor datasheet http://www.manuallib.com/abb/5stp12f4200-control-thyristor-datasheet.html Patented free-floating silicon technology Low on-state and switching losses Designed
More informationThyristor Modules Thyristor/Diode Modules
MCC MCD Thyristor Modules Thyristor/Diode Modules I TRMS = x 5 I TM = x RRM = -8 RSM RRM Type DSM DRM MCC -io MCD -io 5 4 MCC -4io MCD -4io 7 6 MCC -6io MCD -6io 9 8 MCC -8io MCD -8io 7 6 5 4 E787 Symbol
More informationST1230C..K SERIES 1745A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25194 rev. B 01/00. case style A-24 (K-PUK)
ST1230C..K SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case A-24 (K-PUK) High profile hockey-puk 1745A Typical
More informationAsymmetric Gate turn-off Thyristor 5SGA 30J4502
V DRM = 45 V I TGQM = 3 A I TSM = 24 1 3 A V T = 2.2 V r T =.6 mω V Dclink = 28 V Asymmetric Gate turn-off Thyristor 5SGA 3J452 Patented free-floating silicon technology Low on-state and switching losses
More information5SGA 15F2502. Gate turn-off Thyristor. V DRM = 2500 V I TGQM = 1500 A I TSM = 10 ka V T0 = 1.55 V r T = 0.63 mω V DClin = 1400 V
V DRM = 2500 V I TGQM = 1500 A I TSM = 10 ka V T0 = 1.55 V r T = 0.63 mω V DClin = 1400 V Gate turn-off Thyristor 5SGA 15F2502 Doc. No. 5SYA 1214-01 Aug. 2000 Patented free-floating silicon technology
More informationAsymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY
V DRM = 4500 V I TGQM = 600 A I TSM = 3 10 3 A V T0 = 1.9 V r T = 3.5 mω V Dclink = 2800 V Asymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY Patented free-floating silicon technology Low on-state
More information5SGA 20H2501. Gate turn-off Thyristor. V DRM = I TGQM = 2000 A I TSM = 16 ka V T0 = 1.66 V r T = 0.57 mω V DClin = 1400 V
V DRM = 25 V I TGQM = 2 A I TSM = 16 ka V T = 1.66 V r T =.57 mω V DClin = 14 V Gate turn-off Thyristor Doc. No. 5SYA125-1 Jun. 4 Patented free-floating silicon technology Low on-state and switching losses
More informationThyristor Modules Thyristor/Diode Modules
Thyristor Modules Thyristor/Diode Modules I TRMS = 2x 8 I TVM = 2x 6 RM = 8-8 V SM RM Type V DSM V DRM V V Version B 8B Version B 8B 9 8 MCC 95-8 iob / io8b -8 iob / io8b 3 MCC 95-2 iob / io8b -2 iob /
More information5SGF 30J4502. Gate turn-off Thyristor PRELIMINARY. V DRM = 4500 V I TGQM = 3000 A I TSM = 24 ka V T0 = 1.80 V r T = 0.70 mω V DClin = 3000 V
V DRM = 4500 V I TGQM = 3000 A I TSM = 24 ka V T0 = 1.80 V r T = 0.70 mω V DClin = 3000 V Gate turn-off Thyristor 5SGF 30J4502 PRELIMINARY Doc. No. 5SYA 1211-04 Aug. 2000 Patented free-floating silicon
More informationST303C..L SERIES 515A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25186 rev. A 05/94. case style TO-200AC (B-PUK)
ST303C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed
More informationMTC-500, MTK-500, MTA-500 Dual SCR Power Module
KKMTx5, December29 version MTC-5, MTK-5, MTA-5 s are designed for use in power electronic circuits and equipment under normal operating conditions. KEY PARAMETERS U DRM, U RRM I T(AV) I TSM du/dt* di/dt
More informationFeatures / Advantages: Applications: Package: Y4
hyristor Module RRM = 2x 4 A = 26A =. Phase leg Part number MCC2-4io Backside: isolated 3 2 6 7 4 Features / Advantages: Applications: Package: Y4 hyristor for line frequency Planar passivated chip Long-term
More information5SGS 08D4500 Old part no. TG
Old part no. TG 97-8-45 Gate Turn-off Thyristor Properties Key Parameters Full reverse voltage V DRM, V RRM = 4 5 V High reliability I TGQM = 8 A Suitable for drives and traction applications I TAVm =
More informationAsymmetric Gate turn-off Thyristor 5SGA 15F2502
V DRM = 2500 V I GQM = 1500 A I SM = 10 10 3 A V 0 = 1.45 V r = 0.90 mw V Dclink = 1400 V Asymmetric Gate turn-off hyristor 5SGA 15F2502 Patented free-floating silicon technology Low on-state and switching
More informationFeatures / Advantages: Applications: Package: Y4
hyristor Module RRM = 2x 16 A = 181A = 1.3 Phase leg Part number MCC162-16io1 Backside: isolated 3 1 2 6 7 5 4 Features / Advantages: Applications: Package: Y4 hyristor for line frequency Planar passivated
More information3 1/4. Features / Advantages: Applications: Package: SOT-227B (minibloc)
MCO5-6io hyristor RRM = 6 A = 57A =. Single hyristor Part number MCO5-6io Backside: isolated 3 /4 Features / Advantages: Applications: Package: SO-7B (minibloc) hyristor for line frequency Planar passivated
More informationST700C..L SERIES 910A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25190 rev. D 04/00. case style TO-200AC (B-PUK)
ST0C..L SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-0AC (B-PUK) 910A Typical Applications DC motor
More information5SDF 06D2504 Old part no. DM
Fast Recovery Diode Properties 5SDF 6D254 Old part no. DM 827-62-25 Key Parameters Optimized recovery characteristics V RRM = 2 5 V Industry standard housing I FAVm = 615 A I FSM = 1 A Applications V TO
More informationP100 SERIES 25A PASSIVATED ASSEMBLED CIRCUIT ELEMENTS. Features. Description. Major Ratings and Characteristics. Bulletin I27125 rev.
P0 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability Electrically isolated base plate 25A Available up to 200 V RRM, V DRM High dynamic characteristics
More informationRectifier Diode 5SDD 11D2800
V RSM = 3 V I F(AV)M = 1285 A I F(RMS) = 219 A I FSM = 15 1 3 A V F =.933 V r F =.242 mw Rectifier Diode 5SDD 11D28 Doc. No. 5SYA1166- Okt. 3 Very low on-state losses Optimum power handling capability
More informationST733C..L SERIES 940A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25188 rev. A 04/00. case style TO-200AC (B-PUK)
ST733C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed
More informationFeatures / Advantages: Applications: Package: TO-240AA
MCC19-8io1B hyristor Module = 2x 8 M I = 18 = 1.7 Phase leg Part number MCC19-8io1B Backside: isolated 3 1 2 6 7 Features / dvantages: pplications: Package: O-2 hyristor for line frequency Planar passivated
More information5SDD 36K5000 Old part no. DV 889B
Rectifier Diode Old part no. DV 889B-36-5 Properties Key Parameters Industry standard housing V RRM = 5 V Suitable for parallel operation I FAVm = 3 638 A High operating temperature I FSM = 45 A Low forward
More information1 3/4 2. Features / Advantages: Applications: Package: SimBus A
hyristor Module RRM 2x 6.3 Phase leg Part number Backside: isolated 3/4 2 8 7 6 Features / dvantages: pplications: Package: SimBus hyristor for line frequency Planar passivated chip Long-term stability
More informationST183C..C SERIES 370A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25178 rev. B 04/00. case style TO-200AB (A-PUK)
ST83C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AB (A-PUK) All diffused design Center amplifying gate Guaranteed high
More informationST223C..C SERIES 390A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25174 rev. B 04/00. case style TO-200AB (A-PUK)
ST223C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-0AB (A-PUK) All diffused design Center amplifying gate Guaranteed
More informationFeatures / Advantages: Applications: Package: TO-240AA
hyristor Module = 2x6 M I = 6 A A =.28 Phase leg Part number MCC95-6ioB Backside: isolated 3 2 6 7 5 4 Features / Advantages: Applications: Package: O-24AA hyristor for line frequency Planar passivated
More information5SDF 08H6005 PRELIMINARY
V RRM = 5500 V (AV)M = 585 A SM = 18 10 3 A V (T0) = 4.5 V r T = 1.3 mw V DClink = 3300 V Fast Recovery Diode 5SDF 08H6005 PRELIMINARY Patented free-floating technology Industry standard housing Cosmic
More informationSTARPOWER. Rectifier TD180PBS160C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR Rectifier TD180PBS160C5S 1600/180A in one-package General Description STARPOWER Rectifier Power Module provides ultra low conduction loss.they are designed for the applications
More informationFeatures / Advantages: Applications: Package: Y4
hyristor Module = 2x18 M I = 13 A A = 1.8 Phase leg Part number MCC132-18io1 Backside: isolated 3 1 2 6 7 5 4 Features / Advantages: Applications: Package: Y4 hyristor for line frequency Planar passivated
More informationFeatures / Advantages: Applications: Package: TO-240AA
MCC6-ioB hyristor Module = x M = 6 A A =. Phase leg Part number MCC6-ioB Backside: isolated 3 6 7 Features / Advantages: Applications: Package: O-AA hyristor for line frequency Planar passivated chip Long-term
More information5SDF 0131Z0401. High Frequency Housingless Welding Diode. I FAVm = A I FSM = A V TO = V Applications r T = m.
5SDF 131Z41 5SDF 131Z41 High Frequency Housingless Welding Diode Properties Key Parameters High forward current capability V RRM = 4 V Low forward and reverse recovery losses I FAVm = 13 58 A I FSM = 7
More informationSensitive SCRs. ( Amps) Features. Electrically Isolated Packages. Glass Passivation
Selected Packages* U.L. RECOGNIZED File #E71639 TO - 92 THERMOTAB TO-2AB TO-2AB A K G Sensitive SCRs (.8 1 ) 5 General Description The Teccor Electronics, Inc. line of sensitive SCR semiconductors are
More information5SDF 13H4505. Fast Recovery Diode. Properties. Key Parameters. VRRM = V Enhanced Safe Operating Area. IFAVm = A Industry standard housing
5SDF 13H455 5SDF 13H455 Fast Recovery Diode Properties Key Parameters Optimized soft recovery characteristics VRRM = 4 5 V Enhanced Safe Operating Area IFAVm = 1 393 A Industry standard housing IFSM =
More informationThyristor \ Diode Module
hyristor \ Diode Module = 2x16 M I = 181 A A = 1.3 Phase leg Part number MCD162-16io1 Backside: isolated 3 1 2 5 4 Features / Advantages: Applications: Package: Y4 hyristor for line frequency Planar passivated
More informationAsymmetric Integrated Gate- Commutated Thyristor 5SHY 35L4503
V DRM = 45 V I TGQM = 4 A I TSM = 32 ka V T =.4 V r T =.325 mω V DClink = 28 V Asymmetric Integrated Gate- Commutated Thyristor 5SHY 35L453 Highest snubberless turn-off rating Suitable for series connection
More informationHigh Voltage Thyristor \ Diode Module
High oltage hyristor \ Diode Module = 2x2 M I = 165 A A = 1.8 Phase leg Part number MCD161-2io1 Backside: isolated 3 1 2 5 4 Features / Advantages: Applications: Package: Y4 hyristor for line frequency
More informationFeatures / Advantages: Applications: Package: V1-A-Pack
Wx6-io hyristor Module = M I = 7 =,8 C Controlling ~ full-controlled Part number Wx6-io Backside: isolated 4 7 6 9 Features / dvantages: pplications: Package: --Pack hyristor for line frequency Planar
More informationST333C..L SERIES 620A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25187 rev. B 04/00. case style TO-200AC (B-PUK)
ST333C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed
More informationSTARPOWER IGBT GD300HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD3HFY12C6S 12V/3A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More informationPassivated ultra sensitive gate thyristor in a SOT54 plastic package. Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI)
Rev. 2 31 July 28 Product data sheet 1. Product profile 1.1 General description Passivated ultra sensitive gate thyristor in a SOT54 plastic package. 1.2 Features Ultra sensitive gate Direct interfacing
More informationSTARPOWER IGBT GD600SGK120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD6SGK12C2S 12V/6A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as short circuit ruggedness. They
More informationSTARPOWER IGBT GD450HFY120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD45HFY12C2S 12V/45A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More informationSTARPOWER IGBT GD600HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT 1V/A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications
More informationFeatures / Advantages: Applications: Package: SOT-227B (minibloc)
M = =,9 C Controlling ~ full-controlled Part number Backside: isolated 3 Features / dvantages: pplications: Package: SO-7B (minibloc) for line frequency Planar passivated chip Long-term stability Line
More informationT610T-8FP. 6 A logic level Triac. Description. Features. Applications
6 A logic level Triac Description Datasheet production data Available in through-hole fullpack package, the Triac can be used for the on/off or phase angle control function in general purpose AC switching.
More informationSamples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 40 C 1.5 A I T(AV) Average on-state current T C
TCR22-x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microamps of current
More information5SDD 0120C0400 Old part no. DS 879D
Old part no. DS 879D-12-4 Welding diode Properties Key parameters High forward current capability V RRM = 4 V Low forward and reverse recovery losses I FAVm = 11 3 A High operational reliability I FSM
More informationFeatures / Advantages: Applications: Package: SOT-227B (minibloc)
IX7R1N XPT CS 1 I C5 1 1.8 C(sat) Boost Chopper Part number IX7R1N Backside: isolated 3 1 Features / dvantages: pplications: Package: SOT-7B (minibloc) asy paralleling due to the positive temperature coefficient
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 50 Hz, t p = 10 ms, T vj = C f = 5 Hz, t p = 10 ms,
V RSM = 5500 V Rectifier Diode I (AV)M = 3480 A I (RMS) = 5470 A I SM = 46 10 3 A V 0 = 0.94 V r = 0.147 mw 5SDD 33L5500 Patented free-floating silicon technology Very low on-state losses Optimum power
More informationSTARPOWER IGBT GD25FST120L2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD2FST2L2S_G8 2V/2A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More informationTeccor brand Thyristors 1.5 Amp Sensitive SCRs
Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microamps of current as furnished by
More informationSTARPOWER IGBT GD40PIY120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD4PIY12C5S 12V/4A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More informationST303C..C SERIES 620A INVERTER GRADE THYRISTORS. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25172 rev.
ST303C..C SERIES INVERTER GRADE THYRISTORS Puk Version Features Metal case with ceramic insulator International standard case TO-AB (E-PUK) All diffused design Center amplifying gate Guaranteed high dv/dt
More informationSTARPOWER IGBT GD600HFT120C2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD600HFT120C2S_G8 1200V/600A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are
More information1000PT Series. Phase Control Thyristors (Hockey PUK Version), 1000A FEATURES TYPICAL APPLICATIONS. RoHS. Nell High Power Products.
0PT Series Phase Control Thyristors (Hockey PUK ersion), 0 FETURES Center amplifying gate Metal case with ceramic insulator lnternational standard case TO-0C (B-PUK) Nell s C-type Capsule Compliant to
More informationD1 D2 D3 T1 T2 T3 5 D4 D5 D6 T4 T5 T6 7
MIX 11WEH Six-Pack XPT IGBT CES 5 = = 155 CE(sat) = 1. Part name (Marking on product) MIX11WEH 13, 1 1 D1 D D3 T1 T T3 5 9 1 19 17 15 E773 3 D D5 D T T5 T 7 11 1, Features: Easy paralleling due to the
More informationSTARPOWER IGBT GD25FSY120L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD25FSY2L2S 2V/25A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More informationConverter - Brake - Inverter Module (CBI3) with Trench IGBT technology
Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6 12 13 E72873
More information10 23, 24 21, 22 19, , 14
MWI -T7T Six-Pack Trench IGBT = S = (sat) typ. = 1.7 Part name (Marking on product) MWI -T7T, 1, 1 1 9 17 NTC 1 3, 1, 19, E773 1 3 7 11 Pin configuration see outlines. 7, 13, 1 Features: Trench IGBT technology
More informationSTARPOWER. Rectifier RD180PBS180C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR Rectifier 1800V/180A 6 in one-package General Description STARPOWER Rectifier Power Module provides ultra low conduction loss.they are designed for the applications such as SMPS.
More informationConverter - Brake - Inverter Module XPT IGBT
MIX3WBTED Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = CES = Three Phase Inverter CES = I DM = 5 5 = 7 5 = 43 I FSM = 3 CE(sat) =. CE(sat) =. Part name (Marking
More informationConverter - Brake - Inverter Module (CBI3) with Trench IGBT technology
MUBW 5-17 T8 Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6
More informationStandard Rectifier Module
Standard ectifier Module M = 2x 12 I FA = 12A = 1.13 F Phase leg Part number MDD95-12N1B Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-24AA Package with B ceramic Improved temperature
More informationStandard Rectifier Module
Standard ectifier Module M = 2x 16 I FA = 71A = 1.14 F Phase leg Part number MDD56-16N1B Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-24AA Package with B ceramic Improved temperature
More informationConverter - Brake - Inverter Module XPT IGBT
MIXWBTML Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = 16 CES = Three Phase Inverter CES = I DM2 = 1 2 = 17 2 = 28 I FSM = 3 CE(sat) = 1.8 CE(sat) = 1.8 Part name
More informationFeatures / Advantages: Applications: Package: V1-A-Pack
hyristor Module = M I = 7 =,8 C Controlling ~ full-controlled Part number Backside: isolated 4 7 6 9 Features / dvantages: pplications: Package: --Pack hyristor for line frequency Planar passivated chip
More informationT1 T3 T5 D1 D3 D5 G1 G3 G5 U V W G2 G4 G6 EU EV EW
MIXW1TMH Six-Pack XPT IGBT S = 1 2 = 28 (sat) = 1.8 Part name (Marking on product) MIXW1TMH P T1 T3 T D1 D3 D NTC1 G1 G3 G U W NTC2 T2 T4 T6 D2 D4 D6 G2 G4 G6 E 72873 Pin configuration see outlines. EU
More information5SDD 71B0400 Old part no. DS 808D
Old part no. DS 88D-71-4 Welding diode Properties Key parameters High forward current capability VRRM = 4 V Low forward and reverse recovery losses IFAVm = 7 1 A High operational reliability IFSM = A VTO
More information2 nd Generation thinq! TM SiC Schottky Diode
IDH12S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
More informationABB HiPak TM. IGBT Module 5SNA 1200E V CE = 2500 V I C = 1200 A
V CE = 25 V I C = 2 A ABB HiPak TM IGBT Module 5SNA 2E25 Doc. No. 5SYA 557-2 July 4 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC
More information