T610T-8FP. 6 A logic level Triac. Description. Features. Applications

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1 6 A logic level Triac Description Datasheet production data Available in through-hole fullpack package, the Triac can be used for the on/off or phase angle control function in general purpose AC switching. This device can be directly driven by a microcontroller thanks to its ma gate current requirement. Provide UL certified insulation rated at VRMS. Table. Device summary Symbol Value Unit I T(rms) 6 A Features V DRM, V RRM 8 V V DSM, V RSM 9 V I GT ma Medium current Triac Three triggering quadrants Triac ECOPACK compliant component Complies with UL standards (File ref: E8734) 6 A high performance Triac: High T j family High di/dt family High dv/dt family Insulated package TO-FPAB: Insulated voltage: VRMS Applications General purpose AC line load switching Motor control circuits Small home appliances Lighting Inrush current limiting circuits Overvoltage crowbar protection February 5 DocID5568 Rev /9 This is information on a product in full production. 9

2 Characteristics Characteristics Table. Absolute maximum ratings (T j = 5 C unless otherwise stated) Symbol Parameter Value Unit I T(rms) On-state rms current (full sine wave) T c = 7 C 6 A I TSM Non repetitive surge peak on-state current (full cycle, T j initial = 5 C) F = 5 Hz t = ms 45 F = 6 Hz t = 6.7 ms 47 I ² t I ² t value for fusing, T j initial = 5 C t p = ms 3 A ² s V DRM, V RRM Repetitive surge peak off-state voltage T j = 5 C 6 T j = 5 C 8 V DSM, V RSM Non repetitive surge peak off-state voltage t p = ms 9 V di/dt Critical rate of rise of on-state current I G = x I GT, t r ns F = Hz A/µs I GM Peak gate current t p = µs T j = 5 C 4 A P G(AV) Average gate power dissipation T j = 5 C W T stg T j Storage junction temperature range Operating junction temperature range - 4 to to + 5 T L Maximum lead temperature for soldering during s 6 C V ins Insulation rms voltage, minute kv A V C Table 3. Electrical characteristics (T j = 5 C, unless otherwise stated) Symbol Test conditions Quadrant Value Unit I GT V D = V, R L = 3 Ω I - II - III Min..5 Max. ma V GT V D = V, R L = 3 Ω I - II - III Max..3 V V GD V D = V DRM, R L = 3.3 k Ω, T j = 5 C I - II - III Min.. V I () H I T = 5 ma Max. 5 ma I - III Max. ma I L I G =. I GT II Max. 5 ma dv/dt () V D = V R = 536 V, gate open T j = 5 C 5 V/µs Min. V D = V R = 4 V, gate open T j = 5 C 7 V/µs (di/dt)c () (di/dt)c () (dv/dt)c =. V/µs (dv/dt)c = V/µs. For both polarities of A referenced to A T j = 5 C Min. 5. T j = 5 C 3.7 T j = 5 C Min..7 T j = 5 C. A/ms A/ms /9 DocID5568 Rev

3 Characteristics Table 4. Static characteristics Symbol Test conditions Value Unit V () T I TM = 8.5 A, t p = 38 µs T j = 5 C Max..55 V () V t Threshold voltage T j = 5 C Max..85 V R () d Dynamic resistance T j = 5 C Max. 75 mω T j = 5 C 5 µa I DRM V DRM = V RRM = 8 V Max. T I j = 5 C.6 RRM ma V DRM = V RRM = 6 V T j = 5 C Max... For both polarities of A referenced to A Table 5. Thermal resistance Symbol Parameter Value Unit R th(j-c) Junction to case (AC) 4.5 C/W R th(j-a) Junction to ambient (DC) 6 C/W Figure. Maximum power dissipation versus on-state rms current (full cycle) P(W) =8 8 I T(RMS) (A) Figure 3. On-state rms current versus ambient temperature (free air convection) Figure. On-state rms current versus case temperature (full cycle) I T(RMS) (A) =8 T C ( C) Figure 4. Relative variation of thermal impedance versus pulse duration I T(RMS) (A) =8 K = [Z th / R th ].E+ Z th(j-c).e- Z th(j-a).5 T a ( C) t p (s).e-.e-3.e-.e+.e+3.e-.e+.e+ DocID5568 Rev 3/9

4 Characteristics Figure 5. On-state characteristics (maximum values) I TM(A) T j = 5 C T j max : V to =.85 V R d = 75 mω Tj= 5 C V TM (V) Figure 6. Surge peak on-state current versus number of cycles I TSM(A) Repetitive T C = 7 C Non repetitive T j initial=5 C t = ms One cycle Number of cycles Figure 7. Non repetitive surge peak on-state current and corresponding values of I t Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) I TSM (A), I²t (A²s) di/dt limitation: A/µs I TSM T j initial = 5 C I GT, V GT [T j ]/I GT, V GT [T j =5 C].5 I GT Q-Q. I GT Q3.5. V GT Half cycle sinusoidal pulse with I²t width t p < ms t p (ms) T j ( C) Figure 9. Relative variation of static dv/dt immunity versus junction temperature (typical values) Figure. Relative variation of holding current and latching current versus junction temperature (typical values) dv/dt [T 5 j ]/dv/dt[t j =5 C] 4 3 V D = VR = 4 V ; 5 C V D = VR = 536 V ; 5 C..5. I H, I L [T j ]/I H, I L [T j =5 C] I L I H T j ( C) T j ( C) /9 DocID5568 Rev

5 Characteristics Figure. Relative variation of critical rate of decrease of main current (di/dt)c versus reapplied (dv/dt)c (typical values) (di/dt)c [ (dv/dt)c ] / Specified (di/dt)c 3 Tj = 5 C Tj = 5 C (dv/dt)c (V/µs).... Figure. Relative variation of critical rate of decrease of main current (di/dt)c versus junction temperature (typical values) (di/dt) C [T j ] / (di/dt) c [T j =5 C] (dv/dt)c = V/µs T j( C) Figure 3. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values) I DRM, I RRM [Tj;V DRM, V RRM ]/I DRM, I RRM.E+ VDRM = VRRM = 8 V.E- VDRM = VRRM = 6 V.E- VDRM = VRRM = 4 V.E-3 [T j = 5 C; 8 V] ; [T j = 5 C; 6 V] Tj( C).E DocID5568 Rev 5/9

6 Package information Package information Epoxy meets UL94, V Lead-free package Recommended torque:.4 to.6 N m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Figure 4. TO-FPAB dimension definitions H A B Dia L6 L L7 L3 L5 F D L4 F G F E G 6/9 DocID5568 Rev

7 Package information Ref. Table 6. TO-FPAB dimensions Millimeters Dimensions Inches Min. Max. Min. Max. A B D E F F F G G H L 6 Typ..63 Typ. L L L L L Dia DocID5568 Rev 7/9

8 Ordering information 3 Ordering information Figure 5. Ordering information scheme Triac Current 6 = 6 A Gate sensitivity = ma Specific application T = Increased (di/dt)c and dv/dt producing reduced I TSM Voltage (V DRM, V RRM) 8 = 8 V Package FP = TO-FPAB T 6 T - 8 FP Table 7. Ordering information Order code Marking Package Weight Base qty Delivery mode TO-FPAB. g 5 Tube 4 Revision history Table 8. Document revision history Date Revision Changes 5-Feb-4 Initial release. -Feb-5 Updated Features and Table. 8/9 DocID5568 Rev

9 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 5 STMicroelectronics All rights reserved DocID5568 Rev 9/9

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